BFG520W; BFG520W/X. NPN 9 GHz wideband transistors IMPORTANT NOTICE. use

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1 BFGW; BFGW/X Rev. 4 November 7 Product data sheet IMPORTANT NOTICE Dear customer, As from October st, 6 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. use use (Internet) sales.addresses@ use salesaddresses@nxp.com ( ) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors

2 BFGW; BFGW/X FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems. PINNING DESCRIPTION PIN BFGW BFGW/X collector collector base emitter 3 emitter base 4 emitter emitter DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. MARKING 4 Top view 3 MBK3 TYPE NUMBER CODE BFGW N3 BFGW/X N4 Fig. Simplified outline SOT343N. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter V V CES collector-emitter voltage R BE = V I C collector current (DC) 7 ma P tot total power dissipation T s 8 C mw h FE DC current gain I C = ma; V CE = 6 V 6 C re feedback capacitance I C = ; V CB = 6 V; f = MHz.3 pf f T transition frequency I C = ma; V CE = 6 V; f = GHz; T amb = C 9 GHz G UM maximum unilateral I C = ma; V CE = 6 V; f = 9 MHz; T amb = C 7 db power gain S insertion power gain I C = ma; V CE = 6 V; f = 9 MHz; T amb = C 6 7 db F noise figure Γ s =Γ opt ; I C = ma; V CE = 6 V; f = 9 MHz..6 db Rev. 4 - November 7 of

3 BFGW; BFGW/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CES collector-emitter voltage R BE = V V EBO emitter-base voltage open collector. V I C collector current (DC) 7 ma P tot total power dissipation T s 8 C; see Fig.; note mw T stg storage temperature 6 + C T j junction temperature 7 C Note. T s is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point T s 8 C; note 8 K/W Note. T s is the temperature at the soldering point of the collector pin. 6 MBG48 P tot (mw) 4 o T s ( C) Fig. Power derating curve. Rev. 4 - November 7 3 of

4 BFGW; BFGW/X CHARACTERISTICS T j = C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)CBO collector-base breakdown voltage I C = µa; I E = V V (BR)CES collector-emitter breakdown voltage I C =µa; R BE = V V (BR)EBO emitter-base breakdown voltage I E =µa; I C =. V I CBO collector leakage current V CB =6V; I E = na h FE DC current gain I C = ma; V CE = 6 V; see Fig.3 6 C re feedback capacitance I C = ; V CB = 6 V; f = MHz; see Fig.4 f T transition frequency I C = ma; V CE = 6 V; f = GHz; T amb = C; see Fig. G UM Notes maximum unilateral power gain; note. G UM is the maximum unilateral power gain, assuming S is zero. G UM = log ( S ) ( S ) db.. I C = ma; V CE =6V; R L =Ω; T amb = C; f p = 9 MHz; f q = 9 MHz; measured at f p f q = 898 MHz and f q f p = 94 MHz. 3. d im = 6 db (DIN44B); I C = ma; V CE =6V; V p =V o ; V q =V o 6 db; V r =V o 6 db; R L =7Ω; f p = 79. MHz; f q = 83. MHz; f r = 8. MHz; measured at f p +f q f r = 793. MHz. 4. I C = ma; V CE =6V; V o =7mV; R L =7Ω; T amb = C; f p = MHz; f q = 6 MHz; measured at f p +f q = 8 MHz. I C = ma; V CE = 6 V; f = 9 MHz; T amb = C I C = ma; V CE = 6 V; f = GHz; T amb = C S insertion power gain I C = ma; V CE = 6 V; f = 9 MHz; T amb = C F noise figure Γ s =Γ opt ; I C = ma; V CE =6V; f = 9 MHz P L output power at db gain compression Γ s =Γ opt ; I C = ma; V CE =6V; f = 9 MHz Γ s =Γ opt ; I C = ma; V CE =6V; f = GHz I C = ma; V CE = 6 V; f = 9 MHz; R L =Ω; T amb = C.3 pf 9 GHz 7 db db 6 7 db..6 db.6. db.8 db 7 dbm ITO third order intercept point note 6 dbm V o output voltage note 3 7 mv d second order intermodulation distortion note 4 db S Rev. 4 - November 7 4 of

5 BFGW; BFGW/X MLB87.6 MLB88 h FE Cre (pf).4. I C (ma). 7. V CB (V) V CE =6V. I C = ; f = MHz. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. f T (GHz) 8 MLB89 V CE = 6 V 3 V 4 I C (ma) f = GHz; T amb = C. Fig. Transition frequency as a function of collector current; typical values. Rev. 4 - November 7 of

6 BFGW; BFGW/X 3 MLB8 3 MLB8 gain gain MSG G max G UM MSG G max G UM 3 4 I C (ma) 3 4 I C (ma) f = 9 MHz; V CE =6V. f = GHz; V CE =6V. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. gain G UM 4 MLB8 gain G UM 4 MSG MLB83 3 MSG 3 G max G max 3 4 f (MHz) 3 4 f (MHz) I C = ma; V CE =6V. I C = ma; V CE =6V. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. Rev. 4 - November 7 6 of

7 BFGW; BFGW/X 3 MLB88 3 MLB89 d im d I C (ma) I C (ma) V o = 7 mv; f p +f q f r = 793. MHz; V CE =6V; R L =7Ω; T amb = C. Fig. Intermodulation distortion as a function of collector current; typical values. V o = 7 mv; f p +f q = 8 MHz; V CE =6V; R L =7Ω T amb = C. Fig. Second order intermodulation distortion as a function of collector current; typical values. 4 F MLB8 G ass MLB8 f = 9 MHz MHz 3 f = MHz MHz 9 MHz MHz MHz I C (ma) I C (ma) V CE =6V. V CE =6V. Fig. Minimum noise figure as a function of collector current; typical values. Fig.3 Associated available gain as a function of collector current; typical values. Rev. 4 - November 7 7 of

8 BFGW; BFGW/X 4 F MLB8 G ass I C = ma ma MLB83 3 I C = ma ma 3 f (MHz) 4 3 f (MHz) 4 V CE =6V. V CE =6V. Fig.4 Minimum noise figure as a function of frequency; typical values. Fig. Associated available gain as a function of frequency; typical values. Rev. 4 - November 7 8 of

9 BFGW; BFGW/X handbook, full pagewidth unstable region 9 o. 3 o. 4 o.8.6. Γopt.4 F min =. db. 8 o.. F =. db o stability circle. F = db F = 3 db 3 o. 4 o f = 9 MHz; V CE = 6 V; I C = ma; Z o =Ω. 9 o MLB84. Fig.6 Common emitter noise figure circles; typical values. handbook, full pagewidth 9 o. 3 o. 4 o o.. () (3) (). () (4) o.4. () Γ opt ; F min =.8 db. () F = db. (3) F =. db. (4) F = 3 db. () Γ ms ;G max =.8 db. (6) G = db. (7) G = db. (8) G = 9 db. f = GHz; V CE = 6 V; I C = ma; Z o =Ω.. 3 o (6) (7). (8) 9 o 4 o MLB8. Fig.7 Common emitter noise figure circles; typical values. Rev. 4 - November 7 9 of

10 BFGW; BFGW/X handbook, full pagewidth 9 o. 3 o. 4 o GHz.4. 8 o.. o 4 MHz. 3 o. 4 o V CE = 6 V; I C = ma; Z o =Ω. 9 o MLB84. Fig.8 Common emitter input reflection coefficient (S ); typical values. handbook, full pagewidth 9 o 3 o 4 o 4 MHz 8 o GHz o 3 o 4 o V CE = 6 V; I C = ma. 9 o MLB8 Fig.9 Common emitter forward transmission coefficient (S ); typical values. Rev. 4 - November 7 of

11 BFGW; BFGW/X handbook, full pagewidth 9 o 3 o 3 GHz 4 o 8 o MHz o 3 o 4 o V CE = 6 V; I C = ma. 9 o MLB86 Fig. Common emitter reverse transmission coefficient (S ); typical values. handbook, full pagewidth 9 o. 3 o. 4 o o.. o 4 MHz. 3 GHz 3 o. 4 o V CE = 6 V; I C = ma; Z o =Ω. 9 o MLB87. Fig. Common emitter output reflection coefficient (S ); typical values. Rev. 4 - November 7 of

12 BFGW; BFGW/X SPICE parameters for the BFGW die SEQUENCE No. PARAMETER VALUE UNIT IS.6 fa BF. 3 NF. 4 VAF 48.6 V IKF ma 6 ISE 83 fa 7 NE.3 8 BR.7 9 NR.988 VAR.69 V IKR.3 ma ISC 4.48 aa 3 NC. 4 RB. Ω IRB. µa 6 RBM. Ω 7 RE 77.3 mω 8 RC. Ω 9 () XTB. () EG. ev () XTI 3. CJE.4 pf 3 VJE 6. mv 4 MJE.8 TF 8.66 ps 6 XTF VTF.44 V 8 ITF.3 ma 9 PTF 4. deg 3 CJC ff 3 VJC 89. mv 3 MJC.7 33 XCJC.3 34 TR 43.7 ps 3 () CJS. F SEQUENCE No. PARAMETER VALUE UNIT 36 () VJS 7. mv 37 () MJS. 38 FC.78 Note. These parameters have not been extracted, the default values are shown. B L C be L B QL B = ; QL E = ; QL B,E (f)=ql B,E (f/f c ) f c = scaling frequency = GHz. Fig. Package equivalent circuit SOT343N. List of components (see Fig.) DESIGNATION VALUE UNIT C be 7 ff C cb ff C ce ff L.34 nh L. nh L3. nh L B.4 nh L E.4 nh B' Ccb E' E C' L E L3 L C ce MBC964 C Rev. 4 - November 7 of

13 BFGW; BFGW/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT343N D B E A X y H E v M A e 4 3 Q A A c b bp w M B Lp e detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max mm...8 b p b c D E e e H E L p Q v w y. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT343N 97-- Rev. 4 - November 7 3 of

14 BFGW; BFGW/X Legal information Data sheet status Document status [][] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 634) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: For sales office addresses, send an to: salesaddresses@nxp.com Rev. 4 - November 7 4 of

15 BFGW; BFGW/X Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFGW_N_4 7 Product data sheet - BFGW_X_3 Modifications: Page ; text in Pinning table changed BFGW_X_ BFGW_ BFGW_ BFGW_ BFGW_ Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 7. All rights reserved. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: November 7 Document identifier: BFGW_X_N_4

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