High Performance Isolated Collector Silicon Bipolar Transistor. Technical Data HBFP-0450

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1 8 High Performance Isolated ollector Silicon Bipolar Transistor Technical Data HBFP-4 Features Ideal for High Performance, Medium Power, and ow Noise Applications Typical Performance at 1.8 GHz Medium Power Application P 1dB of 19 dbm, Noise Figure of 1.7 db, and Associated Gain of 1 db at 3 V and ma ow Noise Application Noise Figure of 1.2 db, Associated Gain of 13 db, and P 1dB of 11 dbm at 2 V and 1 ma Miniature 4-lead S-7 (SOT-343) Plastic Package Transition Frequency f T = 2 GHz 4-lead S-7 (SOT-343) Surface Mount Plastic Package Pin onfiguration Base Emitter Emitter ollector Note: Package marking provides orientation and identification. Description Hewlett Packard s HBFP-4 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead S-7 (SOT-343) surface mount plastic package. This product is based on a 2 GHz transition frequency fabrication process, which enables the products to be used for high performance, medium power, low noise applications up to 6 GHz. Applications Driver amplifier for ellular and PS base stations Driver amplifier and medium power amplifier for ellular and PS handsets High dynamic range NA for ISM, wireless data, and W applications Oscillator, mixer, and O Buffer applications

2 2 HBFP-4 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1. V BO ollector-base Voltage V 1. V EO ollector-emitter Voltage V 4. I ollector urrent ma 1 P T Power Dissipation [2] mw 4 T j Junction Temperature 1 T STG Storage Temperature -6 to 1 Thermal Resistance: θ jc = 18 /W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. P T due to Maximum Ratings. 3. Thermal resistance measured using iquid rystal Measurement method. Electrical Specifications, T = 2 Symbol Parameters and Test onditions Units Min. Typ. Max. D haracteristics BV EO ollector-emitter Breakdown Voltage I = 1 ma, open base V 4. I BO ollector-utoff urrent V B = V, I E = na I EBO Emitter-Base utoff urrent V EB = 1. V, I = µa 1 h FE D urrent Gain V E = 2 V, I = 2 ma 8 1 RF haracteristics P -1dB Power Output at 1 db I = ma, V E = 3 V, f = 1.8 GHz db 19 ompression Point I = ma, V E = 2 V, f = 1.8 GHz 17 IP 3 3 rd Order Intercept Pt at Output I = ma, V E = 3 V, f = 1.8 GHz dbm 29 G -1dB Gain at 1 db ompression Point I = ma, V E = 3 V, f = 1.8 GHz dbm 16 I = ma, V E = 2 V, f = 1.8 GHz 1. F MIN Minimum Noise Figure I = ma, V E = 3 V, f = 1.8 GHz db 1.7 I = ma, V E = 2 V, f = 1.8 GHz 1.8 G a Associated Gain I = ma, V E = 3 V, f = 1.8 GHz db 1 I = ma, V E = 2 V, f = 1.8 GHz 14. NF Minimum Noise Figure I = 1 ma, V E = 2 V, f = 1.8 GHz db 1.2 I = 2 ma, V E = 2 V, f = 1.8 GHz G a Associated Gain I = 1 ma, V E = 2 V, f = 1.8 GHz db 13 I = 2 ma, V E = 2 V, f = 1.8 GHz P -1dB Power Output at 1 db I = 1 ma, V E = 2 V, f = 1.8 GHz dbm 11 ompression Point I = 2 ma, V E = 2 V, f = 1.8 GHz 14

3 3 HBFP-4 Typical Performance Fmin (db) ma 2 ma. ma 7 ma FREQUENY (GHz) Figure 1. Minimum Noise Figure vs. Frequency and ollector urrent at 2 V. ASSOIATED GAIN (db) FREQUENY (GHz) 1 ma 2 ma ma 7 ma Figure 2. Associated Gain vs. Frequency and ollector urrent at 2 V. Fmin (db) V 2 V 3 V FREQUENY (GHz) Figure 3. Minimum Noise Figure vs. Frequency and Voltage at 2 ma. ASSOIATED GAIN (db) FREQUENY (GHz) 1 V 2 V 3 V Figure 4. Associated Gain vs. Frequency and Voltage at 2 ma. Fmin (db) GHz 1.8 GHz 2. GHz 4 GHz 6 GHz OETOR URRENT (ma) Figure. Minimum Noise Figure vs. ollector urrent at 2 V. ASSOIATED GAIN (db) GHz 1.8 GHz 2. GHz 4 GHz 6 GHz OETOR URRENT (ma) Figure 6. Associated Gain vs. ollector urrent at 2 V.

4 4 HBFP-4 Typical Performance, continued P 1dB (dbm) OETOR URRENT (ma) Figure 7. P 1dB vs. ollector urrent and Frequency. P 1dB (dbm) VOTAGE (V) 2 ma ma 8 ma Figure 8. P 1dB vs. Voltage at 1.8 GHz. P out (dbm) & GAIN (db) P 9 I P 18 I 18 I c (ma) P in (dbm) Figure 9. P out (dbm), Gain (db), and I c (ma) vs. P in (dbm) at 2 V, ma. 9 MHz: Γ S : Mag:.68, Ang: 121 ; Γ : Mag:.38, Ang: MHz: Γ S : Mag:.44, Ang: 18 ; Γ : Mag:.28, Ang: P out (dbm) & GAIN (db) P I I c (ma) POWER GAIN (db) GHz 2 GHz 3 GHz 4 GHz GHz 6 GHz POWER GAIN (db) GHz 2 GHz 3 GHz 4 GHz GHz 6 GHz P in (dbm) Figure 1. P out (dbm), Gain (db), and I c (ma) vs. P in (dbm) at 3 V, 8 ma. Γ S : Mag:.72, Ang: 169 Γ : Mag:.26, Ang: OETOR URRENT (ma) Figure 11. Power Gain vs. ollector urrent and Frequency at 2V VOTAGE (V) Figure 12. Power Gain vs. Voltage and Frequency at ma.

5 HBFP-4 Typical Scattering Parameters, V E = 2 V, I = 1 ma Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang HBFP-4 Noise Parameters: V E = 2 V, I = 1 ma Freq. F min Γ opt R N / G a GHz db Mag Ang db Note: R N represents normalized noise resistance. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each emitter lead contact point, one via on each side of that point IPG MSG/MAG.1 1.E+8 1.E+9 1.E+1 FREQUENY Figure 13. HBFP-4 Power Gain at 2 V, 1 ma.

6 6 HBFP-4 Typical Scattering Parameters, V E = 2 V, I = 2 ma Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang HBFP-4 Noise Parameters: V E = 2 V, I = 2 ma Freq. F min Γ opt R N / G a GHz db Mag Ang db Note: R N represents normalized noise resistance. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each emitter lead contact point, one via on each side of that point. 1 IPG MSG/MAG E+8 1.E+9 1.E+1 FREQUENY Figure 14. HBFP-4 Power Gain at 2 V, 2 ma.

7 7 HBFP-4 Typical Scattering Parameters, V E = 2 V, I = ma Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang HBFP-4 Noise Parameters: V E = 2 V, I = ma Freq. F min Γ opt R N / G a GHz db Mag Ang db Note: R N represents normalized noise resistance. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each emitter lead contact point, one via on each side of that point. 1 IPG MSG/MAG E+8 1.E+9 1.E+1 FREQUENY Figure 1. HBFP-4 Power Gain at 2 V, ma.

8 8 HBFP-4 Typical Scattering Parameters, V E = 3 V, I = ma Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang HBFP-4 Noise Parameters: V E = 3 V, I = ma Freq. F min Γ opt R N / G a GHz db Mag Ang db Note: R N represents normalized noise resistance. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each emitter lead contact point, one via on each side of that point. 1 IPG MSG/MAG E+8 1.E+9 1.E+1 FREQUENY Figure 16. HBFP-4 Power Gain at 3 V, ma.

9 9 HBFP-4 Typical Scattering Parameters, V E = 3 V, I = 8 ma Freq. S 11 S 21 S 12 S 22 GHz Mag Ang db Mag Ang db Mag Ang Mag Ang HBFP-4 Noise Parameters: V E = 3 V, I = 8 ma Freq. F min Γ opt R N / G a GHz db Mag Ang db Note: R N represents normalized noise resistance. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each emitter lead contact point, one via on each side of that point. 1 IPG MSG/MAG E+8 1.E+9 1.E+1 FREQUENY Figure 17. HBFP-4 Power Gain at 3 V, 8 ma.

10 1 HBFP-4 Die Model and SPIE Parameters XX B XX bjt BITMODEFORM NPN=yes PNP= Forward BF=1E6 IKF=1.4737E-1 NE=1.6 VAF=4.4E1 NF=1 TF=.376E-12 XTF=2 RBX R R= E-1 OH =6.227E-14 F Reverse BR=1 IKR=1.1E-1 IS= N=2 VAR=3.37 NR=1. TR=4E-9 VTF=.8 ITF= E PTF=22 XTB=.7 APPROXOB=yes MP2 DIODE AREA= REGION= MODE = DB TEMP= EOX # BJT MODE # MODE = BJTMODE OX RX R =.24E-12 F MP1 NPNBJTSUBST MP16 DIODE TEMP= MODE=DBE REGION= AREA= RE R XX E Diode and junction EG=1.17 VJ=.677 IMAX= MJ=.3319 XTI=3 XJ= E-1 TNOM=21 F=.8 Substrate ISS= NS= R =.4 OH AREA=1 REGION= MODE=BJTMODE R=1.6E-1 OH R=1 OH RSE R J=1.87E-14 ISE=E-19 IS=3.1E-17 JE=9.48E-14 Parasitics VJE=.997 MJE=.63 JS= VJS= MJS= RBA R R=1.4 OH MP3 DIODE Noise RB= E-1 IRB=3.2962E- RBM=.1 RE= R= AF= KB= AB= FB= KF= MP12 DIODEMODEFORM # DIODE MODE # RS= E2 IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= AREA= REGION= MODE=DS TEMP= MODE = DS JO= E-13 TT= EG= VJ=.6 M=.42 N= F=.8 MP1 DIODEMODEFORM # DIODE MODE # JO=2.393E-13 MODE = DB IS=I.47E-16 RS= BV= IBV= TT= IMAX= EG= XTI= VJ=.729 TNOM=21 M=.44 KF= N=1 AF= F=.8 MP11 DIODEMODEFORM # DIODE MODE # IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= ISR= NR= IKF= NBV= IBV= NBV= FFE= ISR= NR= IKF= NBV= IBV= NBV= FFE= MODE = DBE JO=2.9273E-13 RS= TT= EG= VJ=.8971 M=2.292E-1 N=1.29 F=.8 ISR= NR= IKF= NBV= IBV= NBV= FFE= This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. For future improvements Hewlett-Packard reserves the right to change these models without prior notice.

11 11 SOT343 Package Equivalent ircuit =. pf B IN B =.22 nh =.8 pf AGROUND T1 =.2 nh 2T1 =. pf 1T1 AGROUND I =.7 nh EB =.4 pf BASE 2 OETOR EMITTER =.2 nh MP44 =.7 nh =.1 pf 1T3 E T3 =. nh 2T3 =.1 pf AGROUND AGROUND 3 =.2 nh =.144 pf OUT =.1 nh =.1 nh 1T2 T2 =.4 pf E =.1 pf 2T2 AGROUND AGROUND AGROUND

12 12 Part Number Ordering Information Part Number Devices per Reel ontainer HBFP-4-TR1 3 7" Reel HBFP-4-TR2 1, 13" Reel HBFP-4-BK 1 antistatic bag Package Dimensions Outline 43, SOT-343 (S-7 4 ead) 1.3 (.1) BS 1.3 (.1) REF E E1 2.6 (.12) 1.3 (.1). (.21) TYP.8 (.33) 1.1 (.4) BS e 1.1 (.4) REF D h A b TYP A1 TYP DIMENSIONS θ SYMBO A A1 b D E e h E1 θ MIN. MAX..8 (.31) 1. (.39) ().1 (.4).2 (.1).3 (.14).1 (.4).2 (.8) 1.9 (.7) 2.1 (.83) 2. (.79) 2.2 (.87). (.22).6 (.2).4 TYP (.18) 1.1 (.4).1 (.4) 1.3 (.3).3 (.14) 1 DIMENSIONS ARE IN MIIMETERS (INHES)

13 13 Device Orientation REE TOP VIEW 4 mm END VIEW ARRIER TAPE 8 mm USER FEED DIRETION OVER TAPE Tape Dimensions For Outline 4T P D P 2 P E F W t 1 (ARRIER TAPE THIKNESS) D 1 8 MAX. K MAX. A B AVITY PERFORATION DESRIPTION SYMBO SIZE (mm) SIZE (INHES) ENGTH WIDTH DEPTH PITH BOTTOM HOE DIAMETER DIAMETER PITH POSITION A B K P D 1 D P E 2.4 ± ± ±.1 4. ± ±. 4. ± ±.1.94 ±.4.94 ±.4.47 ±.4.17 ± ±.2.17 ±.4.69 ±.4 ARRIER TAPE WIDTH THIKNESS W t 1 8. ±.3.29 ± ±.12.1 ±. DISTANE AVITY TO PERFORATION (WIDTH DIRETION) AVITY TO PERFORATION (ENGTH DIRETION) F P 2 3. ±. 2. ±..138 ±.2.79 ±.2

14 For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/anada: or Far East/Australasia: all your local HP sales office. Japan: (81 3) Europe: all your local HP sales office. Data subject to change. opyright 1998 Hewlett-Packard o E (12/98)

1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor. Application Note 1168

1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor. Application Note 1168 18 MHz Medium Power Amplifier using the HBFP-4 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard s HBFP-4 is a high performance, medium power Isolated ollector transistor housed