Surface Mount Package SOT-343. Pin Connections and Package Marking. 5Px GATE

Transcription

1 ATF-3143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago s ATF-3143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-7 (SOT-343) surface mount plastic package. Based on its featured performance, ATF-3143 is suitable for applications in cellular and PCS base stations, LEO systems, MMDS, and other systems requiring super low noise figure with good intercept in the 4 MHz to 1 GHz frequency range. Other PHEMT devices in this family are the ATF and the ATF The typical specifications for these devices at 2 GHz are shown in the table below: Surface Mount Package SOT-343 Pin Connections and Package Marking Part No. Gate Width Bias Point NF (db) Ga (db) OIP3 (dbm) ATF µ 4 V, 8 ma ATF µ 4 V, 6 ma ATF µ 2 V, ma Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1) Refer to Avago Application Note A4R: Electrostatic Discharge Damage and Control. DRAIN SOURCE Px SOURCE GATE Note: Top View. Package marking provides orientation and identification. P = Device code x = Date code character. A new character is assigned for each month, year. Features Lead-free Option Available Low Noise Figure Excellent Uniformity in Product Specifications Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-7) Tape-and-Reel Packaging Option Available Specifications 1.9 GHz; 2V, ma (Typ.).4 db Noise Figure 18 db Associated Gain 11 dbm Output Power at 1 db Gain Compression 21 dbm Output 3 rd Order Intercept Applications Low Noise Amplifier for Cellular/ PCS Handsets LNA for WLAN, WLL/RLL, LEO, and MMDS Applications General Purpose Discrete PHEMT for Other Ultra Low Noise Applications

2 2 ATF-3143 Absolute Maximum Ratings [1] Absolute Symbol Parameter Units Maximum V DS Drain - Source Voltage [2] V. V GS Gate - Source Voltage [2] V - V GD Gate Drain Voltage [2] V - I DS Drain Current [2] ma I [3] dss P diss Total Power Dissipation [4] mw 3 P in max RF Input Power dbm 14 T CH Channel Temperature C 16 T STG Storage Temperature C -6 to 16 θ jc Thermal Resistance [] C/W Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiesent conditions. 3. V GS = V 4. Source lead temperature is 2 C. Derate 3.2 mw/ C for T L > 67 C.. Thermal resistance measured using C Liquid Crystal Measurement method V [7, 8] Product Consistency Distribution Charts 12 1 Cpk = 1.73 Std =.3 I DS (ma) 8 6 V Std +3 Std 4.6 V V DS (V) Figure 1. Typical Pulsed I-V Curves [6]. (V GS = -.2 V per step) OIP3 (dbm) Figure 2. 2 GHz, 2 V, ma. LSL=19., Nominal=2.9, USL= Cpk = 3.7 Std = Cpk = 2.7 Std = Std +3 Std 8-3 Std +3 Std NF (db) Figure 3. 2 GHz, 2 V, ma. LSL=.2, Nominal=.37, USL= GAIN (db) Figure 4. 2 GHz, 2 V, ma. LSL=16., Nominal=18., USL= Under large signal conditions, V GS may swing positive and the drain current may exceed I dss. These conditions are acceptable as long as the maximum P diss and P in max ratings are not exceeded. 7. Distribution data sample size is 4 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 8. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test requirements. Circuit losses have been deembedded from actual measurements.

3 3 ATF-3143 Electrical Specifications T A = 2 C, RF parameters measured in a test circuit for a typical device Symbol Parameters and Test Conditions Units Min. Typ. [2] Max. I [1] dss Saturated Drain Current V DS = 1. V, V GS = V ma V [1] P Pinchoff Voltage V DS = 1. V, I DS = 1% of I dss V I d Quiescent Bias Current V GS =.4 V, V DS = 2 V ma g [1] m Transconductance V DS = 1. V, g m = I dss /V P mmho 9 12 I GDO Gate to Drain Leakage Current V GD = V µa 2 I gss Gate Leakage Current V GD = V GS = -4 V µa 1 f = 2 GHz V DS = 2 V, I DS = ma db.4.7 NF Noise Figure [3] V DS = 2 V, I DS = ma..9 f = 9 MHz V DS = 2 V, I DS = ma db.3 V DS = 2 V, I DS = ma.4 f = 2 GHz V DS = 2 V, I DS = ma db G a Associated Gain [3] V DS = 2 V, I DS = ma f = 9 MHz V DS = 2 V, I DS = ma db 2 V DS = 2 V, I DS = ma 18 f = 2 GHz V DS = 2 V, I DS = ma dbm OIP3 Output 3 rd Order V DS = 2 V, I DS = ma 14 Intercept Point [4, ] f = 9 MHz V DS = 2 V, I DS = ma dbm 19 V DS = 2 V, I DS = ma 14 f = 2 GHz V DS = 2 V, I DSQ = ma dbm 1 P 1dB 1 db Compressed V DS = 2 V, I DSQ = ma 8 Intercept Point [4] f = 9 MHz V DS = 2 V, I DSQ = ma dbm 9 V DS = 2 V, I DSQ = ma 9 1. Guaranteed at wafer probe level 2. Typical value determined from a sample size of 4 parts from 9 wafers. 3. 2V ma min/max data guaranteed via the 2V ma production test. 4. Measurements obtained using production test board described in Figure.. P out = -1 dbm per tone Input Ohm Transmission Line Including Gate Bias T (. db loss) Input Matching Circuit Γ_mag =.66 Γ_ang = (.4 db loss) DUT Ohm Transmission Line Including Drain Bias T (. db loss) Output Figure. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P 1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual measurements.

4 4 ATF-3143 Typical Performance Curves 3 3 OIP3, P 1dB (dbm) OIP3 P 1dB OIP3, P 1dB (dbm) 2 2 OIP3 P 1dB 2 V 3 V 4 V I DSQ (ma) Figure 6. OIP3 and P 1dB vs. Bias at 2 GHz. [1,2] 1 2 V 3 V 4 V I DSQ (ma) Figure 7. OIP3 and P 1dB vs. Bias at 9 MHz. [1,2] 2 19 G a 2 V 3 V 4 V G a 2 V 3 V 4 V 2. 2 Ga (db) NF (db) G a (db) NF (db) 16 NF. 16 NF I DSQ (ma) Figure 8. NF and G a vs. Bias at 2 GHz. [1] I DSQ (ma) Figure 9. NF and G a vs. Bias at 9 MHz. [1] P 1dB (dbm) 1 P 1dB (dbm) 1 2 V 3 V 4 V I DS (ma) Figure 1. P 1dB vs. Bias (Active Bias) Tuned for 2V, ma at 2 GHz. [1] 2 V 3 V 4 V I DS (ma) Figure 11. P 1dB vs. Bias (Active Bias) Tuned for 2V, ma at 9 MHz. [1] 1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V ma bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test board requirements. Circuit losses have been de-embedded from actual measurements. 2. P 1dB measurements are performed with passive biasing. Quiescent drain current, I DSQ, is set with zero RF drive applied. As P 1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I DSQ the device is running closer to class B as power output approaches P 1dB. This results in higher P 1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V DS = 4 V and I DSQ = ma, I d increases to 3 ma as a P 1dB of + dbm is approached.

5 ATF-3143 Typical Performance Curves, continued F min (db) ma.2 ma 3 ma Figure 12. F min vs. Frequency and Current at 2V. Ga (db) ma ma 3 ma Figure 13. Associated Gain vs. Frequency and Current at 2V G a (db) C -4 C 8 C NF (db) OIP3, P 1dB (dbm) C -4 C 8 C Figure 14. F min and G a vs. Frequency and Temperature, V DS =2V, I DS = ma Figure. OIP3 and P 1dB vs. Frequency and Temperature [1,2], V DS =2V, I DS = ma OIP3, P 1dB (dbm), Gain (db) 2 1 P 1dB OIP3 Gain NF I DS (ma) Figure 16. OIP3, P 1dB, NF and Gain vs. Bias [1] (Active Bias, 2V, 3.9 GHz) NF (db) OIP3, P 1dB (dbm), Gain (db) P 1dB OIP3 Gain NF I DS (ma) Figure 17. OIP3, P 1dB, NF and Gain vs. Bias [1] (Active Bias, 2V,.8 GHz) NF (db) 1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2V ma bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual measurements. 2. P 1dB measurements are performed with passive biasing. Quiescent drain current, I DSQ, is set with zero RF drive applied. As P 1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I dsq the device is running closer to class B as power output approaches P 1dB. This results in higher P 1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V DS = 4 V and I DSQ = ma, I d increases to 3 ma as a P 1dB of + dbm is approached.

6 6 ATF-3143 Typical Scattering Parameters, V DS = 2 V, I DS = ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db ATF-3143 Typical Noise Parameters V DS = 2 V, I DS = ma Freq. F min Γ opt R n/ G a GHz db Mag. Ang. - db MSG/MAG and S 21 (db) S 21 MSG MAG Figure 18. MSG/MAG and S 21 2 vs. Frequency at 2 V, ma. 1. F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements a true F min is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each source lead contact point, one via on each side of that point.

7 7 ATF-3143 Typical Scattering Parameters, V DS = 2 V, I DS = 1 ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db ATF-3143 Typical Noise Parameters V DS = 2 V, I DS = 1 ma Freq. F min Γ opt R n/ G a GHz db Mag. Ang. - db MSG/MAG and S 21 (db) S 21 MSG MAG Figure 19. MSG/MAG and S 21 2 vs. Frequency at 2 V, 1 ma. 1. F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP test system. From these measurements a true F min is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each source lead contact point, one via on each side of that point.

8 8 ATF-3143 Typical Scattering Parameters, V DS = 2 V, I DS = ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db ATF-3143 Typical Noise Parameters V DS = 2 V, I DS = ma Freq. F min Γ opt R n/ G a GHz db Mag. Ang. - db MSG/MAG and S 21 (db) S 21 MSG MAG Figure 2. MSG/MAG and S 21 2 vs. Frequency at 2 V, ma. 1. F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP test system. From these measurements a true F min is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each source lead contact point, one via on each side of that point.

9 9 ATF-3143 Typical Scattering Parameters, V DS = 2 V, I DS = 3 ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db ATF-3143 Typical Noise Parameters V DS = 2 V, I DS = 3 ma Freq. F min Γ opt R n/ G a GHz db Mag. Ang. - db MSG/MAG and S 21 (db) S 21 MSG MAG Figure 21. MSG/MAG and S 21 2 vs. Frequency at 2 V, 3 ma. 1. F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP test system. From these measurements a true F min is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each source lead contact point, one via on each side of that point.

10 1 ATF-3143 Typical Scattering Parameters, V DS = 3 V, I DS = 1 ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db ATF-3143 Typical Noise Parameters V DS = 3 V, I DS = 1 ma Freq. F min Γ opt R n/ G a GHz db Mag. Ang. - db MSG/MAG and S 21 (db) S 21 MSG MAG Figure 22. MSG/MAG and S 21 2 vs. Frequency at 3 V, 1 ma. 1. F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements a true F min is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each source lead contact point, one via on each side of that point.

11 11 ATF-3143 Typical Scattering Parameters, V DS = 3 V, I DS = ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db ATF-3143 Typical Noise Parameters V DS = 3 V, I DS = ma Freq. F min Γ opt R n/ G a GHz db Mag. Ang. - db MSG/MAG and S 21 (db) S 21 MSG MAG Figure 23. MSG/MAG and S 21 2 vs. Frequency at 3 V, ma. 1. F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements a true F min is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each source lead contact point, one via on each side of that point.

12 12 ATF-3143 Typical Scattering Parameters, V DS = 3 V, I DS = 3 ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db ATF-3143 Typical Noise Parameters V DS = 3 V, I DS = 3 ma Freq. F min Γ opt R n/ G a GHz db Mag. Ang. - db MSG/MAG and S 21 (db) S 21 MSG MAG Figure 24. MSG/MAG and S 21 2 vs. Frequency at 3 V, 3 ma. 1. F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements a true F min is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each source lead contact point, one via on each side of that point.

13 13 ATF-3143 Typical Scattering Parameters, V DS = 4 V, I DS = 3 ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db ATF-3143 Typical Noise Parameters V DS = 4 V, I DS = 3 ma Freq. F min Γ opt R n/ G a GHz db Mag. Ang. - db MSG/MAG and S 21 (db) MSG S 21 MAG Figure 2. MSG/MAG and S 21 2 vs. Frequency at 4 V, 3 ma. 1. F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements a true F min is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each source lead contact point, one via on each side of that point.

14 14 ATF-3143 Typical Scattering Parameters, V DS = 4 V, I DS = 6 ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db ATF-3143 Typical Noise Parameters V DS = 4 V, I DS = 6 ma Freq. F min Γ opt R n/ G a GHz db Mag. Ang. - db MSG/MAG and S 21 (db) MSG S 21 MAG Figure 26. MSG/MAG and S 21 2 vs. Frequency at 4 V, 6 ma. 1. F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements a true F min is calculated. Refer to the noise parameter application section for more information. 3. S and noise parameters are measured on a microstrip line made on.2 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two.2 inch diameter via holes are placed within.1 inch from each source lead contact point, one via on each side of that point.

15 Noise Parameter Applications Information F min values at 2 GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP test system. From these measurements, a true F min is calculated. F min represents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically Ω, to an impedance represented by the reflection coefficient Γ o. The designer must design a matching network that will present Γ o to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to F min only when the device is presented with Γ o. If the reflection coefficient of the matching network is other than Γ o, then the noise figure of the device will be greater than F min based on the following equation. NF = F min + 4 R n Γ s Γ o 2 Zo ( 1 + Γ o 2 )(1 Γ s 2 ) Where R n /Z o is the normalized noise resistance, Γ o is the optimum reflection coefficient required to produce F min and Γ s is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. Γ o is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower Γ o as compared to narrower gate width devices. Typically for FETs, the higher Γ o usually infers that an impedance much higher than Ω is required for the device to produce F min. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-q components in order to minimize circuit losses. As an example at 9 MHz, when airwwound coils (Q>1) are used for matching networks, the loss can still be up to.2 db which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 3 to range results in additional loss over the airwound coil. Losses as high as. db or greater add to the typical. db F min of the device creating an amplifier noise figure of nearly.6 db. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Avago Application 18.

16 16 ATF-3143 SC-7 4 Lead, High Frequency Model Optimized for.1 6. GHz EQUATION La=.1 nh EQUATION Lb=.1 nh EQUATION Lc=.8 nh EQUATION Ld=.6 nh EQUATION Rb=.1 OH EQUATION Ca=. pf EQUATION Cb=. pf R R=.1 OH LOSSYL L=Lb R=Rb GATE_IN L L=Lc C LOSSYL L=Lb R=Rb C=Ca G D LOSSYL L=Lb R=Rb C=Cb L L=La*. C SOURCE SOURCE L L=La LOSSYL L=Lb R=Rb S LOSSYL L=Lb R=Rb L L=Ld DRAIN_OUT This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. For future improvements Avago reserves the right to change these models without prior notice. ATF-3143 Die Model * STATZ MESFET MODEL * MODEL = FET IDS model NFET=yes PFET= IDSMOD=3 VTO=.9 BETA= Beta LAMBDA=.9 ALPHA=4. B=.8 TNOM=27 IDSTC= VBI=.7 Gate model DELTA=.2 GSCAP=3 CGS=cgs pf GDCAP=3 GCD=Cgd pf Parasitics RG=1 RD=Rd RS=Rs LG=Lg nh LD=Ld nh LS=Ls nh CDS=Cds pf CRF=.1 RC=Rc Breakdown GSFWD=1 GSREV= GDFWD=1 GDREV= VJR=1 IS=1 na IR=1 na IMAX=.1 XTI= N= EG= Noise FNC=1e+6 R=.17 P=.6 C=.2 Model scal factors (W=FET width in microns) EQUATION Cds=.1 * W/2 EQUATION Beta=.6 * W/2 EQUATION Rd=2/W EQUATION Rs=. * 2/W EQUATION Cgs=.2 * W/2 EQUATION Cgd=.4 * W/2 EQUATION Lg=.3 * 2/W EQUATION Ld=.3 * 2/W EQUATION Ls=.1 * 2/W EQUATION Rc= * 2/W G W=4 µm XX NFETMESFET XX D MODEL=FET S S XX

17 17 Part Number Ordering Information No. of Part Number Devices Container ATF-3143-TR1 3 7" Reel ATF-3143-TR2 1 13" Reel ATF-3143-BLK 1 antistatic bag ATF-3143-TR1G 3 7" Reel ATF-3143-TR2G 1 13" Reel ATF-3143-BLKG 1 antistatic bag Note: For lead-free option, the part number will have the character G at the end. Package Dimensions SC-7 4L/SOT (.1) BSC HE E 1. (.4) BSC b1 D A A2 b A1 L C DIMENSIONS (mm) SYMBOL E D HE A A2 A1 b b1 c L MIN MAX NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC7.. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish.

18 18 Recommended PCB Pad Layout for Avago's SC7 4L/SOT-343 Products Device Orientation REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE TOP VIEW 4 mm END VIEW mm PX PX PX PX Dimensions in mm inches

19 Tape Dimensions and Product Orientation For Outline 4T P D P 2 P E C F W t 1 (CARRIER TAPE THICKNESS) D 1 T t (COVER TAPE THICKNESS) 1 MAX. K 1 MAX. A B CAVITY PERFORATION DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION A B K P D 1 D P E 2.4 ± ± ±.1 4. ± ±.1 4. ± ±.1.94 ±.4.94 ±.4.47 ±.4.7 ± ±.4.69 ±.4 CARRIER TAPE WIDTH THICKNESS W t ± ±.8 COVER TAPE WIDTH TAPE THICKNESS C.4 ±.1 T t.62 ± ±.4 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 2 3. ±. 2. ±..138 ±.2.79 ±.2 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright 26 Avago Technologies Pte. All rights reserved. Obsoletes EN EN January 9, 26