Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1

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1 AVT DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair configuration housed in a 6-lead (SOT-363) surface mount plastic package. The Darlington feedback structure provides inherent broad bandwidth performance, resulting in useful operating frequency up to 6 GHz. This is an ideal device for small-signal gain cascades or IF amplification. AVT is fabricated using advanced InGaP HBT (Hetero-junction Bipolar Transistor) technology that offers state-of-the-art reliability, temperature stability and performance consistency. Component Image GND GND Input Typical Biasing Configuration V CC = 5V 53X Top View Output & V d GND GND Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1 Features Small signal gain amplifier Operating frequency DC to 6 GHz Unconditionally stable 50 Ohm input & output Flat, Broadband Frequency Response up to 2 GHz Industry standard SOT-363 Lead-free, RoHS compliant, Green Specifications 2 GHz, 5V Vcc, 48mA (typical) 19.5 db Gain 15.1 dbm P1dB 26.5 dbm OIP3 3.2 db NF db IRL and ORL Applications Cellular / PCS / 3G base station Wireless Data / WLAN WiMAX / WiBRO CATV & Cable modem ISM Rbias C byp C byp R bias = (V CC - V d )/I d RFin C block Pin 3 Pin 6 V d Pin 1, 2, 4, 5 (GND) C block RFout Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 160 V ESD Human Body Model = 00 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.

2 Absolute Maximum Rating [1] T A = Symbol Parameter Units Absolute Max. I d Device Current ma 80 P IN,MAX CW RF Input Power dbm 18 P DISS Total Power Dissipation [3] mw 327 T OPT Operating Temperature C -40 to 85 T J,MAX Junction Temperature C 150 T STG Storage Temperature C -65 to 150 Thermal Resistance Thermal Resistance [2] jc = 184 C/W (I d = 48 ma, T c = ) 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using Infrared measurement technique. 3. Ground lead temperature is. Derate 5.5mW/ C for T c >90 C. Electrical Specifications [1] T A =, Zo = 50, V CC = 5 V, R bias = 22, P in = -15 dbm (unless specified otherwise) Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. I d Device Current ma Gp Power Gain 900 MHz 00 MHz OIP3 [2] Output 3 rd Intercept Point 900 MHz 00 MHz S11 Input Return Loss, 50 source 900 MHz 00 MHz S22 Output Return Loss, 50 load 900MHz 00 MHz S12 Reverse Isolation 900 MHz 00 MHz P1dB Output Power at 1dB Gain Compression 900 MHz 00 MHz NF Noise Figure 900 MHz 00 MHz db dbm db db db dbm db Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1). 2. OIP3 test condition: F RF1 - F RF2 = MHz with input power of -23 dbm per tone measured at worse side band. 2

3 V CC R bias Bias Tee RFin Zo = 50 Ohm Pin 3 Pin 6 Pin 1, 2, 4, 5 (GND) Zo = 50 Ohm RFout Figure 1. Block diagram of board used for Id, Gain, OIP3, S11, S22, S12, OP1dB and NF measurements. Circuit losses have been de-embedded from actual measurements. Product Consistency Distribution Charts at 2 GHz, V cc = 5 V, R bias = 22 LSL USL LSL USL Figure 2. I d (ma) distribution. LSL = 44.5, Nominal = 47.6, USL = 50.5 Figure 3. Gain (db) distribution. LSL = 18, Nominal = 19.5, USL = 21 LSL Figure 4. OIP3 (dbm) distribution. LSL = 25.5, Nominal = Statistical distribution determined from a sample size of 1500 samples taken from 3 different wafers from 2 wafer lots, measured on a production test board. 2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits. 3

4 AVT Typical Performance Curves T A =, Zo = 50, P in = -15 dbm (unless specified otherwise) Gain (db) Frequency (GHz) Figure 5. Gain vs Frequency at Id = 48mA P1dB (dbm) Frequency (GHz) Figure 6. P1dB vs Frequency at Id = 48mA OIP3 (dbm) Frequency (GHz) Figure 7. OIP3 vs Frequency at Id = 48mA, Pin = -23dBm NF (db) Frequency (GHz) Figure 8. NF vs Frequency at Id = 48mA Vd (V) Figure 9. I d vs V d and Temperature 4

5 AVT Typical Performance Curves T A =, Zo = 50, P in = -15 dbm (unless specified otherwise), continued 23 Gain (db) Figure. Gain vs I d and Temperature at 900 MHz P1dB (dbm) 15 5 Figure 11. P1dB vs I d and Temperature at 900 MHz OIP3 (dbm) Figure 12. OIP3 vs I d and Temperature at 900 MHz, Pin = -23dBm NF(dB) 3.5 Figure 13. NF vs I d and Temperature at 900 MHz 21 Gain (db) Figure 14. Gain vs I d and Temperature at 2 GHz P1dB (dbm) 15 5 Figure 15. P1dB vs I d and Temperature at 2 GHz 5

6 AVT Typical Performance Curves T A =, Zo = 50, P in = -15 dbm (unless specified otherwise), continued OIP3 (dbm) NF(dB) Figure 16. OIP3 vs I d and Temperature at 2 GHz, Pin = -23dBm Figure 17. NF vs I d and Temperature at 2 GHz Gain (db) Figure 18. Gain vs I d and Frequency (GHz) P1dB (dbm) Figure 19. P1dB vs I d and Frequency (GHz) OIP3 (dbm) NF (db) Figure. OIP3 vs I d and Frequency (GHz), Pin = -23dBm Figure 21. NF vs I d and Frequency (GHz) 6

7 AVT Typical Performance Curves T A =, Zo = 50, P in = -15 dbm (unless specified otherwise), continued S11 (db) -15 S22 (db) Id=30mA Id=48mA Id=60mA Frequency (GHz) Id=30mA Id=48mA Id=60mA Frequency (GHz) Figure 22. S11 vs Frequency and I d Figure 23. S22 vs Frequency and I d 7

8 AVT Typical Scattering Parameters T A =, Zo = 50, I d = 30 ma, (unless specified otherwise) Frequency S11 S21 S12 S22 GHz Mag Angle db Mag Angle Mag Angle Mag Angle K S-parameters are measured on a CPWG line fabricated on inch thick Rogers RO4350 material. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead. 8

9 AVT Typical Scattering Parameters T A =, Zo = 50, I d = 48 ma, (unless specified otherwise) Frequency S11 S21 S12 S22 GHz Mag Angle db Mag Angle Mag Angle Mag Angle K S-parameters are measured on a CPWG line fabricated on inch thick Rogers RO4350 material. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead. 9

10 AVT Typical Scattering Parameters T A =, Zo = 50, I d = 60 ma, (unless specified otherwise) Frequency S11 S21 S12 S22 GHz Mag Angle db Mag Angle Mag Angle Mag Angle K S-parameters are measured on a CPWG line fabricated on inch thick Rogers RO4350 material. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead.

11 Part Number Ordering Information Part Number No. of Devices Container AVT TR1G Reel AVT BLKG 0 Antistatic bag Package Dimensions Outline 63 (SOT-363/SC-70) Recommended PCB Pad Layout for Avago s SC70 6L/SOT-363 Products HE E e D Dimensions in inches. A1 A2 A Q1 c b L Dimensions (mm) Symbol Min Max E D HE A A A Q e 0.65 b c L All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJSC Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish BCS. 11

12 Device Orientation REEL TOP VIEW 4 mm END VIEW CARRIER TAPE 8 mm 53X 53X 53X 53X USER FEED DIRECTION COVER TAPE Tape Dimensions and Product Orientation for Outline 63 P D P 2 P 0 E C F W t 1 (CARRIER TAPE THICKNESS) D 1 T t (COVER TAPE THICKNESS) MAX. K O MAX. A 0 B 0 CAVITY PERFORATION CARRIER TAPE COVER TAPE DISTANCE DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A 0 B 0 K 0 P D ± ± ± 0. 0 ± ± ± ± ± DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) D P 0 E 1.55 ± ± ± 0. W 8.00 ± 0.30 t ± ± ± ± ± ± C 5.4 ± ± T t ± ± F 3.50 ± ± P 2 0 ± ±

13 Reel Dimension 7 inch For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright Avago Technologies. All rights reserved. AV EN - September 29, 11