SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block

Transcription

1 Product Description Sirenza Microdevices SBB-389Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. The SBB-389Z product is designed for high linearity 5V gain block applications that require excellent gain flatness, small size, and minimal external components. It is internally matched to 5 ohms. SBB-389Z Pb 5-6 MHz InGaP HBT Active Bias Gain Block RoHS Compliant & Green Package db Gain and Return Loss V S = 5V, I S = 42mA S21 Bias Tee Data, Z S = Z L = 5 Ohms, T L = S11 S22 Product Features Single Fixed 5V Supply Patented Self Bias Circuit and Thermal Design Gain = 16.7 dbm at 195 MHz P1dB = 15.2 dbm at 195 MHz OIP3 = 29.8 dbm at 195 MHz Robust 1V ESD, Class 1C HBM MSL 1 Moisture Rating Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Wideband Instrumentation Symbol Parameters Units Frequency Min. Typ. Max. 85 MHz 16.8 G Small Signal Gain db 195 MHz MHz MHz 15.4 P 1dB Output Power at 1dB Compression dbm 195 MHz MHz MHz 29.7 OIP 3 Output Third Order Intercept Point dbm 195 MHz MHz 29.4 IRL Input Return Loss db 195 MHz 22 ORL Output Return Loss db 195 MHz 3 NF Noise Figure db 195 MHz 3.9 V D Device Operating Voltage V I D Device Operating Current ma 42 I D RANGE Operational Current Range ma 3 46 Rth, j-l Thermal Resistance (junction to lead) C/W 8 Test Conditions: V D = 4.2V I D = 42mA T L = 25 C OIP 3 Tone Spacing = 1MHz R DC = 2 ohms Bias Tee Data Z S = Z L = 5 Ohms Pout per tone = dbm The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 27 Sirenza Microdevices, Inc.. All worldwide rights reserved. Broomfield, CO EDS83 Rev A

2 SBB-389Z.5-6 GHz Active Bias Gain Block Typical RF Performance at Key Operating Frequencies (Bias Tee Data) Symbol Parameter Unit Frequency (MHz) G Small Signal Gain db OIP 3 Output Third Order Intercept Point dbm P 1dB Output Power at 1dB Compression dbm IRL Input Return Loss db ORL Output Return Loss db S 12 Reverse Isolation db NF Noise Figure db Test Conditions: V D = 4.2V I D = 42mA OIP 3 Tone Spacing = 1MHz, Pout per tone = dbm R DC = 2 ohms T L = 25 C Z S = Z L = 5 Ohms Typical Performance with Bias Tees, V D = 5V with R DC =2 ohms, I D = 42mA 34 OIP3 vs. Frequency (dbm/tone, 1MHz spacing) 2 P1dB vs. Frequency OIP3 (dbm) P1dB (dbm) Absolute Maximum Ratings Parameter Absolute Limit Max Device Current (I D ) 1mA Max Device Voltage (V D ) 6 V Max. RF Input Power* (See Note) +2 dbm Max. Junction Temp. (T J ) +15 C Operating Temp. Range (T L ) -4 C to +85 C Max. Storage Temp. +15 C *Note: Load condition, Z L = 5 Ohms Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I D V D < (T J - T L ) / R TH, j-l T L =T LEAD Reliability & Qualification Information Parameter Rating ESD Rating - Human Body Model (HBM) Class 1C Moisture Sensitivity Level MSL 1 This product qualification report can be downloaded at Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Broomfield, CO EDS83 Rev A

3 SBB-389Z.5-6 GHz Active Bias Gain Block Typical Performance with Bias Tees, V S = 5V R DC = 2 ohms, I D = 42mA S11 vs. Frequency 2 S21 vs. Frequency 18 S11 (db) -1-2 Gain (db) S12 vs. Frequency S22 vs. Frquency S12 (db) -1-2 S22 (db) NF vs. Frequency 1 9 DCIV NF (db) ID (ma) V D (Volts) Broomfield, CO EDS83 Rev A

4 SBB-389Z.5-6 GHz Active Bias Gain Block Basic Application Circuit Vs RF IN RDC 1.1uF 4 SBB-389Z 3 1pF L1 RF OUT Application Circuit Element Values Reference 5-35 MHz Designator C1 C2 L1 1pF 68pF 48nH 85HQ Coilcraft Recommended Bias resistor Values for I D= 42mA R DC = (V S - V D ) / I D Supply Voltage(V S ) 5V 6V 8V 1V 12V C1 2 C2 R DC 2Ω 43Ω 91Ω 139Ω 187Ω Mounting Instructions RDC 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking & Pinout 4 Pin # Function Description 1 RF IN 2,4 GND RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation Connection to ground. Use via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance Part Ordering Information Part Package / Devices / Reel Size Number Lead Composition Reel SBB-389Z Lead Free, RoHS Compliant 7" 1 3 RF OUT / DCBIAS RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Broomfield, CO EDS83 Rev A

5 SBB-389Z.5-6 GHz Active Bias Gain Block Suggested PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches (millimeters) Refer to package drawing posted at for tolerances Bottom View Package Type: SOT- 89 Side View Broomfield, CO EDS83 Rev A