NOT RECOMMENDED FOR NEW DESIGNS

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1 Product Description Sirenza Microdevices SPA-8 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 50 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. Symbol P f 0 Parameters: Test Conditions: Z 0 = 50 Ohms, Temp = 5º C, V Frequency of Operation cc = 5.0V SPA-8 50 MHz Watt Power Amplifier with Active Bias Product Features High Linearity Performance: +0. W-CDMA Channel Power at -50 dbc ACP +47 Typ. OIP On-chip Active Bias Control Power Control Allows Power Consumption Reduction Patented High Reliability GaAsHBT Technology Surface-Mountable Plastic Package Applications O utput Power at db Compression Bm db ACP [] A djacent Channel Power P = 0. OUT S S mall Signal Gain B VSWR W-CDMA Systems Multi-Carrier Applications U nits M in. T yp. MHz 0 70 d 9. 0 dbc d I nput VSWR -.5: utput Third Order Intercept Point OIP Power out per tone = +4,] NF N oise Figure Icc Vcc R VCC VBIAS RFIN N/C th,j- l Input Match Active Bias [] O [ B d 7. 0,] D evice Current RFOUT/ VCC [ A m D evice Voltage V Thermal Resistance (junction - lead), T = 85º C º C/ W 5 L [] Optimal ACP tune [] Optimal IP tune The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 00 Sirenza Microdevices, Inc. All worldwide rights reserved. EDS-049 Rev I

2 dbc 0-70 MHz Application Circuit Data, Icc=0mA, Vcc=5V Note: Tuned for ACP Adj. Channel Pwr. vs. Channel Output Pwr. PdB vs Frequency Device Current (ma) db db SPA-8 50 MHz Watt Power Amp S S S Device Current vs. Source Voltage V cc (V) Gain vs. Frequency Input/Output Return Loss, Isolation vs. Frequency, T=5 C EDS-049 Rev I

3 SPA-8 50 MHz Watt Power Amp. ACP Tune 0-70 MHz Schematic Vcc pf 60 Ω 4 8.pF 0-70 MHz Evaluation Board Layout C R C Vcc C4 C5 C6 0uF ECB-06 Rev. C SOIC-8 PA Eval Board 000pF 8.pF Z=50Ω, nh.8pf Vpc L Sirenza Microdevices Ref. Des. Value 68pF Part Number C pf, C C, C5 8.pF, ±0.5pF C 0uF, 0% AVX TAJB06K00R C 4 000pF, C6.8pF, ±0.5pF C 7 68pF, L 5nH, Toko LL608-FS series C7 R 60 Ohm, Rohm MCR0 series EDS-049 Rev I

4 SPA-8 50 MHz Watt Power Amp. Pin # Function Description V cc VCC is the supply voltage for the active bias network. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. V bias Vbias is the bias control pin for the active bias network. Device current is set by the current into this pin. Recommended configuration shown in the Application Schematic is required for optimum RF performance. RF In RF input pin. This pin requires the use of an external DC blocking capacitor. 4 N/ C No connectio n 5, 6, 7, 8 RF Out/Vc c RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. EPAD Gnd Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RFperformance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 5). Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. The Moisture Sensitivity Level rating for this device is level (MSL-) based on the JEDEC -A standard classification. No special moisture packaging/handling is required during storage, shipment, or installation of the devices. Device Schematic ACTIVE BIAS NETWORK Absolute Maximum Ratings Parameter (Ta = 5 C) Supply Current (I Device Voltage (V RF Input Power ) at V typ. CC C C ) at I typ. CC C C 5-8 Absolute Limit 750 ma 6.0 V 9 Junction Temp. (T ) +60 º C J Storage Temp. +50 º C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: ( max) < ( T - T / R,j-l J L I CC V CC ) th 4 EDS-049 Rev I

5 .6 [5.994].55 [.97].050 [.7] PARTING LINE 5 TOP VIEW.94 [4.98] Lot ID SPA 8 DETAIL A.06 [.406].06 [.549].05 SPA-8 50 MHz Watt Power Amp. Part Number Ordering Information Part Number Devices Per Reel Reel Size SPA " Package Outline Drawing (See SMDI MPO-0644 for tolerances, available on our website) SIDE VIEW.045 [.4].05 [.889] Recommended Land Pattern Note: DIMENSIONS ARE IN INCHES [MM] Beveled Edge.008 [.0].00 [.076] SEATING PLANE.058 [.47] SEE DETAIL A [.0].94 [4.9] BOTTOM VIEW 0.50 [.8] Plated-Thru Holes (0.05" Dia, 0.00" Pitch) Machine Screws [.7].0 [.] x [.97] END VIEW EXPOSED PAD 0.00 [0.5] [.56] 0.00 [7.6] 5 EDS-049 Rev I