Typical Performance 1. Absolute Maximum Ratings
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- Louise Bradley
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1 Device Features +5V/215mA at operating bias condition Gain = MHz P1dB = MHz OIP3 = 42.1dBm 16dBm/tone at 2400MHz LTE 20M ACLR = 19.1dBm Output Power at 2400MHz Lead-free/Green/RoHS-compliant SOT89 SMT package Product Description The BT302 is a high performance and a high dynamic range amplifier in a low cost surface mount package(sot-89) with a RoHScompliant, that incorporates reliable heterojunction-bipolar-transistor (HBT) devices fabricated with InGaP/GaAs technology. This device is designed for use where high linearity is required and features high ACLR and P1 performance with low consumption current(215ma) and requires a few external matching components, DC blocking capacitors on the In/Output pin and a bypass capacitor and a RF choke for the out port. Applications Base station /Repeaters Infrastructure/Small Cell Commercial/Industrial/Military wireless system LTE / WCDMA /CDMA Wireless Infrastructure Application Circuits 1 Parameter Frequency Unit MHz Gain db S db S db OIP dbm P1dB dbm LTE 20M ACLR dbm WCDMA ACLR dbm Noise Figure db 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω 2 OIP3 _ measured on two tones with a output power 16dBm/ tone, F2 F1 = 1 MHz.. *ACLR Channel Power measured at -50dBc. - LTE set-up: 3GPP LTE, FDD E-TM3.1, 20MHz BW, ±5MHz offset, PAR Prob. - WCDMA set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz offset, PAR 9.78 at 0.01% Prob. Min. Typical Max. Unit Bandwidth MHz I (Vcc&Vbias=5V) ma V CC /V bias 5.0 V R TH 19.5 C/W *External matching circuit: Refer to application circuit for each frequency. Absolute Maximum Ratings Parameter Rating Unit Operating Case Temperature -40 to +105 C Storage Temperature -55 to +155 C Junction Temperature 220 C Operating Voltage +6.0 V Supply Current 550 ma Input RF Power 24 dbm *Operation of this device above any of these parameters may result in permanent damage. 1
2 V-I Characteristics Typical Device Data S-parameters (Vc=5V, Ic=215mA, T=25 C) 2
3 (Vdevice = 5.0V, I c = 215mA, T = 25 C, calibrated to device leads) S-Parameter Freq S11 S11 S21 S21 S12 S12 S22 S22 [MHz] [Mag] [Ang] [Mag] [Ang] [Mag] [Ang] [Mag] [Ang]
4 Application Circuit: 915 MHz Schematic Diagram BOM Remark C uF C nF C3 C2 C1 Vcc C pF C pF L1 C pF RFin C4 C6 RFout C pF L3 U1 L2 C7 C5 C pF L nH Coil L nH L nH U1 SOT89 BT302 Note: 1. Distance between the edge of the series cap(c6) and the input pin of BT mm. 2. Distance between the edge of the shunt ind(l3) and the input pin of BT mm. 3. Distance between the edge of the series ind(l2) and the output pin of BT mm. 4. Distance between the edge of the shunt cap(c7) and the output pin of BT mm. Figure about the reference position of components 4
5 5
6 3GPP WCDMA 1FA ACLR ( 50dBc) 3GPP LTE TM3.1 20MHz ACLR ( 50dBc) 6
7 Application Circuit: 1960 MHz RFin C4 C7 Schematic Diagram BOM Remark C uF C nF Vcc C3 C2 C1 L1 C6 RFout U1 C5 C8 C pF C pF C pF C pF C pF C pF L nH Coil U1 SOT89 BT302 Note: 1. Distance between the edge of the series cap(c6) and the input pin of BT mm. 2. Distance between the edge of the shunt ind(c7) and the input pin of BT mm. 3. Distance between the edge of the shunt cap(c8) and the output pin of BT mm. Figure about the reference position of components 7
8 8
9 3GPP WCDMA 1FA ACLR ( 50dBc) 3GPP LTE TM3.1 20MHz ACLR ( 50dBc) 9
10 Application Circuit: 2140 MHz RFin C4 C7 Schematic Diagram BOM Remark C uF C nF Vcc C3 C2 C1 L1 C6 RFout U1 C5 C8 C pF C pF C pF C pF C pF C pF L nH Coil U1 SOT89 BT302 Note: 1. Distance between the edge of the series cap(c6) and the input pin of BT mm. 2. Distance between the edge of the shunt ind(c7) and the input pin of BT mm. 3. Distance between the edge of the shunt cap(c8) and the output pin of BT mm. Figure about the reference position of components 10
11 11
12 3GPP WCDMA 1FA ACLR ( 50dBc) 3GPP LTE TM3.1 20MHz ACLR ( 50dBc) 12
13 Application Circuit: 2400 MHz RFin C4 C7 Schematic Diagram BOM Remark C uF C nF Vcc C3 C2 C1 L1 C6 RFout U1 C5 C8 C pF C pF C pF C pF C pF C pF L nH Coil U1 SOT89 BT302 Note: 1. Distance between the edge of the series cap(c6) and the input pin of BT mm. 2. Distance between the edge of the shunt ind(c7) and the input pin of BT mm. 3. Distance between the edge of the shunt cap(c8) and the output pin of BT mm. Figure about the reference position of components 13
14 14
15 3GPP WCDMA 1FA ACLR ( 50dBc) 3GPP LTE TM3.1 20MHz ACLR ( 50dBc) 15
16 Application Circuit: 2600 MHz RFin C4 C7 Schematic Diagram BOM Remark C uF C nF Vcc C3 C2 C1 L1 C6 RFout U1 C5 C8 C pF C pF C pF C pF C pF C pF L nH Coil U1 SOT89 BT302 Note: 1. Distance between the edge of the series cap(c6) and the input pin of BT mm. 2. Distance between the edge of the shunt ind(c7) and the input pin of BT mm. 3. Distance between the edge of the shunt cap(c8) and the output pin of BT mm. Figure about the reference position of components 16
17 17
18 3GPP WCDMA 1FA ACLR ( 50dBc) 3GPP LTE TM3.1 20MHz ACLR ( 50dBc) 18
19 Application Circuit: 3500 MHz RFin C4 C7 Schematic Diagram BOM Remark C uF C nF Vcc C3 C2 C1 L1 C6 RFout U1 C5 C8 C pF C pF C pF C pF C pF C pF L nH Coil U1 SOT89 BT302 Note: 1. Distance between the edge of the series cap(c6) and the input pin of BT mm. 2. Distance between the edge of the shunt cap(c7) and the input pin of BT mm. 3. Distance between the edge of the shunt cap(c8) and the output pin of BT mm. Figure about the reference position of components 19
20 20
21 3GPP WCDMA 1FA ACLR ( 50dBc) 3GPP LTE TM3.1 20MHz ACLR ( 50dBc) 21
22 PCB Land Pattern PCB Mounting Note : All dimension _ millimeters PCB lay out _ on BeRex website 22
23 Package Marking Tape & Reel SOT89 Packaging information: Tape Width (mm): 12 Reel Size (inches): 7 YY = Year, WW = Working Week, XX = Wafer No. Device Cavity Pitch (mm): 8 Devices Per Reel: 1000 Lead plating finish 100% Tin Matte finish (All BeRex products undergoes a 1 hour, 150 degree C, Anneal bake to eliminate thin whisker growth concerns.) MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 1C Passes <2000V Human Body Model (HBM) JEDEC Standard JESD22-A114B MSL Rating: Standard: Level 1 at +265 C convection reflow JEDEC Standard J-STD-020 NATO CAGE code: 2 N 9 6 F 23
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features OIP3 = 43.0 dbm @ 900 MHz Gain = 20.0 db @ 900 MHz Output P1 db = 24.5 dbm @ 900 MHz 50 Ω Cascadable Lead-free/RoHS-compliant SOT-89 SMT package Product Description BeRex s BT09AG is a
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features OIP3 = 41.0 dbm @ 1900 MHz Gain = 15.5 db @ 1900 MHz Output P1 db = 25.5 dbm @ 1900 MHz 50 Ω Cascadable Lead-free/RoHS-compliant SOT-89 SMT package Product Description BeRex s BT09VG is
Typical Performance 1. IS-95C ACPR dbm WCDMA ACLR dbm
Device Features OIP3 = 45.0 dbm @ 1900 MHz Gain = 15.0 db @ 1900 MHz Output P1 db = 27.5 dbm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protection Circuit Lead-free/RoHS-compliant SOT-89 SMT package
Typical Performance 1. Absolute Maximum Ratings
Device Features +5V/680mA at operating bias condition Gain = 27.3 db @ 1850 MHz P1dB = 33.1 dbm @ 1850MHz LTE 10M ACLR = 23.5dBm Output Power at -50dBc @ 1850MHz Intergrated interstage matching Lead-free/Green/RoHS-compliant
Typical Performance 1. 2 OIP3 _ measured with two tones at an output of 11 dbm per tone separated by 1 MHz. Absolute Maximum Ratings
Device Features OIP3 = 40.5 dm @ 1900 MHz Gain = 19.0 d @ 1900 MHz Output P1 d = 22.7 dm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protection Circuit Lead-free/RoHS-compliant SOT-89 SMT package
Typical Performance 1. 2 OIP3 _ measured on two tones with a output power 23dBm/ tone, F2 F1 = 1 MHz.. Absolute Maximum Ratings
Device Features +5V/550mA at operating bias condition Gain = 25.5 db @ 2.65 GHz P1dB = 33.5 dbm @ 2.65GHz LTE 10M ACLR = 22.7dBm Output Power at -50dBc @ 2.65GHz Intergrated interstage matching Lead-free/Green/RoHS-compliant
Preliminary Datasheet
Device Features This can be operated at Vd of 3.0V N.F = 0.78 db @ 1850MHz at Demo board 31.5 dbm Output IP3 at 0dBm/tone at 1850MHz 15.6 db Gain at 1850MHz 17.7 dbm P1dB at 1850 MHz Lead-free/Green/RoHS
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features NF = 0.95 db @ 900MHz at RF connectors of Demo board Gain = 20.5 db @ 900 MHz OIP3 = 30.0 dbm @ 1900MHz Output P1 db = 17.5 dbm @ 900MHz 5V/27mA, MTTF > 100 Years, MSL 1, Class 0 Lead-free/RoHS-compliant
3 OIP3 _ measured with two tones at an output of 9dBm per tone separated by 1 MHz.
Device Features OIP3 = 36.9dBm @ 950 MHz Gain = 17.1 db @ 950 MHz Output P1 = 19.5 dbm @950 MHz CTB = 80.0 dbc @ 300MHz CTO = 64.0 dbc @ 300MHz Patented temperature compensation Lead-free/RoHS-compliant
Typical Performance 1. Absolute Maximum Ratings. Parameter
Device Features Typical Isolation = 23 db Typical Insertion Loss = 0.4 db MSL 3 moisture rating Lead-free/RoHS-compliant SOIC-8 Plastic Package With exposed back side ground pad Product Description BeRex
Typical Performance 1. Absolute Maximum Ratings. Parameter
Device Features Typical Isolation = 23 db Typical Insertion Loss = 0.5 db MSL 3 moisture rating Lead-free/RoHS-compliant SOIC-8 Plastic Package With exposed back side ground pad Product Description BeRex
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DATA SHEET AWB7238: 791 to 821 MHz Small-Cell Power Amplifier Module Applications LTE, WCDMA and HSDPA air interfaces Picocell, femtocell, home nodes Customer premises equipment Features InGaP HBT technology
SKY LF: 2000 to 3000 MHz Low-Noise Power Amplifier Driver
DATA SHEET SKY65081-70LF: 2000 to 3000 MHz Low-Noise Power Amplifier Driver Applications UHF television TETRA radios 2.5G, 3G handsets ISM band transmitters WCS fixed wireless 802.16 WiMAX 3GPP LTE Features
Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX
Ultra Linear Low Noise Monolithic Amplifier 50Ω 0.05 to 4 GHz The Big Deal Ultra High IP3 Broadband High Dynamic Range May be used as a replacement for RFMD SPF-5189Z a,b SOT-89 PACKAGE Product Overview
Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA312BV is a 2--stage high efficiency, Class AB InGaP HBT amplifier
HMC580ST89 / 580ST89E. Features OBSOLETE. DC GHz GHz GHz. db db db Gain Variation Over Temperature DC GHz 0.
v.71 HMC5ST9 / 5ST9E Typical Applications The HMC5ST9 / HMC5ST9E is ideal forr: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications Functional
Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX in a single amplifier.
Flat Gain, Ultra-Wideband Monolithic Amplifier 50Ω 0.01 to 12 GHz The Big Deal Ultra broadband performance Excellent Gain Flatness through 8 GHz Broadband without external matching components CASE STYLE:
Broad Band: 5 to 300 MHz 5 to 300 MHz bandwidth covers primary CATV applications such as DOCSIS 3.1
Flat Gain, High Dynamic Range Monolithic Amplifier 75Ω 5 to 300 MHz The Big Deal High IP3 Flat Gain / Excellent Return Loss Low Noise Figure SOT-89 PACKAGE Product Overview (RoHS compliant) is an advanced
Features. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
TQM GHz ¼ W Digital Variable Gain Amplifier
Applications 3G / 4G Wireless Infrastructure CDMA, WCDMA, LTE Repeaters ISM Infrastructure Product Features 28-pin 6x6 mm leadless SMT package Functional Block Diagram 0.6-1.0 GHz Frequency Range 31.5
MAX2687 MAX2689 MAX2694. MAX2687 MAX2694 L1 = 4.7nH C1 = 100nF C2 = 10pF. MAX2689 L1 = 5.8nH C1 = 100nF C2 = 10pF
EVALUATION KIT AVAILABLE MAX27/MAX29/MAX29 General Description The MAX27/MAX29/MAX29 low-noise amplifiers (LNAs) are designed for GPS L1, Galileo, and GLONASS applications. Designed in Maxim s advanced
SXA-3318B(Z) 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER. Product Description. Features. Applications
0MHz to 20MHz Balanced ½ W Medium Power GaAs HBT Amplifier SXA-331B(Z) 0MHz to 20MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description
Monolithic Amplifier EHA-163L+ Low Current, Wideband, Flat Gain. 50Ω DC to 16 GHz. The Big Deal
Low Current, Wideband, Flat Gain Monolithic Amplifier 50Ω DC to 16 GHz The Big Deal Super Wideband, DC to 16 GHz Excelent Gain Flatness, ±0.75 up to 12 GHz Low Current, 20 ma CASE STYLE: MC1630-1 Product
TAT MHz Variable Gain Return Path Amplifier
Applications Return Path Amplifier System Amplifier Line Amplifier DOCSIS Return Path VGA Bonded Channel Cable Modem Return Path Product Features 6x6 mm Pin leadless SMT Package Functional Block Diagram
SKY : 3400 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier
DATA SHEET SKY66313-11: 3400 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier Applications FDD and TDD 4G LTE and 5G systems Supports 3GPP Bands N78, B22, and B42 Driver amplifier
50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
AWG115 Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG115, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a
SKY : 2000 to 2300 MHz High-Efficiency 4 W Power Amplifier
DATA SHEET SKY66294-11: 2 to 23 MHz High-Efficiency 4 W Power Amplifier Applications VCC1 VBIAS PAEN VCC3 FDD and TDD 2G/3G/4G LTE systems Active Bias 3GPP band 1, 4, 1, and 23 small-cell base stations
Features. Specifications. Applications. Vcc
AVT-55689 50 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-55689 is an economical, easy-touse, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX
Flat Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal Ultra Flat Gain Broadband High Dynamic Range without external Matching Components May be used as a replacement to RFMD SBB4089Z a,b
SKY : 1805 to 1880 MHz High-Efficiency 4 W Power Amplifier
DATA SHEET SKY66291-11: 185 to 188 MHz High-Efficiency 4 W Power Amplifier Applications VCC1 VBIAS PAEN VCC3 FDD and TDD 2G/3G/4G LTE systems 3GPP band 3 and 9 small cell base stations Active Bias Driver