TQP7M W High Linearity Amplifier. Applications. Product Features. Functional Block Diagram. Pin Configuration. General Description
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1 TQP7M9 Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24 Pin 4x4 mm QFN Package Product Features Functional Block Diagram MHz +33 dbm PdB at 94 MHz + dbm Output IP3 at 94 MHz 2.8 db Gain at 94 MHz +V Single Supply, 4 ma Current Patented internal RF overdrive protection Patented internal DC overvoltage protection On chip ESD protection Shut-down capability Capable of handling : VSWR at Vcc=+ V,.9 GHz, 33 dbm CW Pout or 23. dbm WCDMA Pout Vbias Iref 7 RFout/Vcc RFout/Vcc 4 RFout/Vcc 3 General Description The TQP7M9 is a high linearity, high gain 2W driver amplifier in industry standard, RoHS compliant, QFN surface mount package. This InGaP/GaAs HBT delivers high performance across. to. GHz range of frequencies while achieving 2.8 db gain, + dbm OIP3 and +33 dbm PdB at 94MHz while only consuming 4 ma quiescent current. All devices are % RF and DC tested. The TQP7M9 incorporates patented on-chip circuit techniques that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. The TQP7M9 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device is an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multi-carrier 3G / 4G base stations. Pin Configuration Pin No. Symbol Vbias 4, 4,, RFout/Vcc 8 Iref 2, 3, -3, 7, 9-24 Ordering Information Part No. TQP7M9 Description 2 W High Linearity Amplifier TQP7M9-PCB MHz Evaluation Board Standard T/R size = 2 pieces on a 3 reel. Datasheet: Rev D of 8 - Disclaimer: Subject to change without notice
2 TQP7M9 Absolute Maximum Ratings Parameter Rating Storage Temperature - to C RF Input Power, CW, Ω, T=2 C Device Voltage (V CC ) +3 dbm +8 V Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units Device Voltage (V CC ) V Case Temperature C Tj for > hours MTTF +7 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: V CC =+ V, Temp= +2 C, tuned application circuit Parameter Conditions Min Typ Max Units Operational Frequency Range MHz Test Frequency 94 MHz Gain db Input Return Loss 9.2 db Output Return Loss 2.7 db Output PdB dbm Output IP3 Pout = +7 dbm/tone, f = MHz dbm WCDMA Channel Power ACLR=- dbc () +23. dbm Noise Figure 4.8 db Quiescent Current (I CQ ) 3 4 ma Reference Current (I ref ) 8.9 ma Thermal Resistance, θ jc Junction to case 7.2 C/W. ACLR Test set-up: 3GPP WCDMA, TM+4 DPCH, + MHz offset, PAR = 9.7 db at.% Prob. Datasheet: Rev D of 8 - Disclaimer: Subject to change without notice
3 Gain (db) TQP7M9 Device Characterization Data 3 Gain & Max Stable Gain Input reflection coefficients Output reflection coefficients 2 2 Gain Gmax Frequency (GHz) Note: The gain for the unmatched device in ohm system is shown as the trace in black color, [gain (S(2)]. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown as the blue trace [Gmax]. The impedance plots are shown from. 4 GHz. S-Parameters Test Conditions: V CC=+ V, I CQ=4 ma, T=+2 C, unmatched ohm system, calibrated to device leads Freq (GHz) S (db) S (ang) S2 (db) S2 (ang) S2 (db) S2 (ang) S22 (db) S22 (ang) Datasheet: Rev D of 8 - Disclaimer: Subject to change without notice
4 7 8 9 TQP7M9-PCB9 Evaluation Board (92-9 MHz) TQP7M9 Vcc +V R R8 C3 C7 C C7 R 28 D3 SMTG C3 R7 24 C7 uf 32 C7 C R2 C L C9 C8 L4 R3 C4 U L3 R L B C C2 C3 J2 RF Input C R3 L4 C4 pf Vbias 2 R2 3 C9 4 C 2.4 pf L 22 pf 8.2 nh C8.8 pf U R. uf 8 nh 3 L3 Iref 8 7 RFout RFout RFout B L 8 nh 8 C2 8.2 pf pf C pf C pf C3 pf J3 RF Output. Components shown on the silkscreen but not on the schematic are not used. 2. Ω resistor can be replaced with copper trace in the target application layout. 3. To power down the device, voltage can be applied to V ref to control I ref by placing resistor R8 and removing R7. 4. The recommended component values are dependent upon the frequency of operation.. All components are of 3 size unless stated on the schematic.. R is critical for device linearity performance. 7. Critical component placement locations: Distance between center of C8 and TQP7M9 (U) device package is 243 mil (.7º at 94MHz) Distance between center of L and TQP7M9 (U) device package is 42 mil (2.8º at 94MHz) Distance between center of C9 and TQP7M9 (U) device package is 27 mil (3.3º at 94MHz) Distance between center of C2 and TQP7M9 (U) device package is 3 mil (7.2º at 94MHz) 2 Bill of Material TQP7M9-PCB9 Reference Des. Value Description Manuf. Part Number U n/a 2W High Linearity Amplifier TriQuint TQP7M9 n/a n/a Printed Circuit Board TriQuint D3 n/a Zener, dual, SOT-23 various B, L3, L4, R3, C Ω Resistor, Chip, 3, %, /W various R2 Ω Resistor, Chip, 3, %, /W various R 28 Ω Resistor, Chip, 3, %, /W various R7 24 Ω Resistor, Chip, 3, %, /W various C2 8.2 pf Capacitor, Chip, 3, ±.pf, V, Accu-P AVX 3J8R2ABSTR C7 uf Capacitor, Tantalum, 32, 3V, % various C8.8pF Capacitor, Chip, 3, ±.pf, V, Accu-P AVX 3JR8ABSTR C9 2.4 pf Capacitor, Chip, 3, ±.pf, V, Accu-P AVX 3J2R4ABSTR C 22 pf Capacitor, Chip, 3, %, V, NPO/COG various C, C3, C4, C pf Capacitor, Chip, 3, %, V, NPO/COG various C3. uf Capacitor, Chip, 3, V, XR, % various C7 pf Capacitor, Chip, 3, %, V, NPO/COG various L 8 nh Inductor, 8, %, Coilcraft CS Series Coilcraft 8CS-8XJLB L 8.2 nh Inductor, 3, % Toko LL8-FSL8N2 R 8 nh Inductor, 3, % Toko LL8-FSL8N R4, C2, C4 n/a Do Not Place Datasheet: Rev D of 8 - Disclaimer: Subject to change without notice
5 OIP3 (dbm) PdB (dbm) Icc (ma) ACLR (dbm) ACLR (dbm) OIP3 (dbm) Gain (db) Return Loss (db) Return Loss (db) TQP7M9 Typical Performance TQP7M9-PCB9 Test conditions unless otherwise noted: V CC=+ V, Temp=+2 C Parameter Conditions Typical Value Units Frequency MHz Gain db Input Return Loss db Output Return Loss db Output PdB dbm Output IP3 Pout= +7 dbm/tone, Δf= MHz dbm WCDMA Channel Power ACLR=- dbc () dbm Noise Figure db Quiescent Collector Current, I CQ 4 ma. ACLR Test set-up: 3GPP WCDMA, TM+4 DPCH, + MHz offset, PAR = 9.7 db at.% Prob. Performance Plots TQP7M9-PCB9 Test conditions unless otherwise noted: V CC=+ V, Temp=+2 C Gain vs. Frequency Input Return Loss vs. Frequency 22 Output Return Loss vs. Frequency C +2 C +8 C C +2 C +8 C C +2 C +8 C Frequency (GHz) Frequency (GHz) Frequency (GHz) ACLR vs. Output Power at 94MHz W-CDMA 3GPP Test Model +4 DPCH PAR = Probability 3.84 MHz BW Frequency : 94 MHz ACLR vs. Output Power vs. Frequency W-CDMA 3GPP Test Model +4 DPCH PAR = Probability 3.84 MHz BW 92 MHz 94 MHz 9 MHz Temp.=+2 o C 4 OIP3 vs. Output Power at 94MHz MHz Tone Spacing C +2 C +8 C C +2 C +8 C Output Power (dbm) Output Power (dbm) Output Power / Tone(dBm) OIP3 vs. Output Power vs. Frequency Temp.=+2 o C MHz Tone Spacing PdB vs. Frequency 9 8 Frequency : 94 MHz Temp.=+2 o C Icc vs. Output Power MHz 94 MHz 9 MHz C +2 C 4 C Output Power / Tone(dBm) Frequency (MHz) Output Power (dbm) Datasheet: Rev D of 8 - Disclaimer: Subject to change without notice
6 TQP7M9 Pin Configuration and Description Vbias Iref 7 RFout/Vcc RFout/Vcc 4 RFout/Vcc Pin No. Symbol Description Vbias Voltage supply for active bias for the amp. Connect to same supply voltage as Vcc. 4, RF IN RF Input. Requires external match for optimal performance. External DC Block required. 4,, RFout / V cc RF Output. Requires external match for optimal performance. External DC Block and supply voltage is required. Reference current into internal active bias current mirror. Current into I 8 I ref ref sets device quiescent current. Also, can be used as on/off control. 2, 3, -3, 7, 9-24 GND RF/DC Ground Connection Backside Paddle RF/DC GND RF/DC ground. Use recommended via pattern to minimize inductance and thermal resistance. See PCB Mounting Pattern for suggested footprint. Evaluation Board PCB Information TriQuint PCB Material and Stack-up.4".2 ±. Finished Board Thickness.4" Nelco N-4-3 Nelco N-4-3 ε r =3.7 typ. Nelco N-4-3 oz. Cu top layer oz. Cu inner layer oz. Cu inner layer oz. Cu bottom layer ohm line dimensions: width =.3 spacing =.3" Datasheet: Rev D of 8 - Disclaimer: Subject to change without notice
7 TQP7M9 Package Marking and Dimensions Marking: Part Number 7M9 Date Code YYMM Lot code AaXXXX TERMINAL # IDENTIFIER 4. 24X. Pitch 24X.2±. Pin # IDENTIFIER CHAMFER.3 x 4 24X.4±. 4 7M9 YYMM AaXXXX ±. Exp. DAP R.7 2. Ref. 24X. C.8 C...23 Ref..8±. C SEATING PLANE 2.7±. Exp. DAP GND/THERMAL PAD. All dimensions are in millimeters. Angles are in degrees. 2. Except where noted, this part outline conforms to JEDEC standard MO-22, Issue E (Variation VGGC) for thermally enhanced plastic very thin fine pitch quad flat no lead package (QFN). 3. Dimension and tolerance formats conform to ASME Y4.4M The terminal # identifier and terminal numbering conform to JESD 9- SPP-2.. Co-planarity applies to the exposed ground/thermal pad as well as the contact pins.. Package body length/width does not include plastic flash protrusion across mold parting line. PCB Mounting Pattern 3 X PACKAGE OUTLINE 24X X.38. PITCH R (SOLDER MASK) MINIMUM BACKSIDE THERMAL CONTACT AREA COMPONENT SIDE BACK SIDE. All dimensions are in millimeters. Angles are in degrees. 2. Use oz. copper minimum for top and bottom layer metal. 3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We recommend a.3mm (#8/.3") diameter bit for drilling via holes and a final plated thru diameter of.2mm (. ). 4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.. Place mounting screws near the part to fasten a back side heat sink.. Do not apply solder mask to the back side of the PC board in the heat sink contact region. 7. Ensure that the backside via region makes good physical contact with the heat sink. Datasheet: Rev D of 8 - Disclaimer: Subject to change without notice
8 TQP7M9 Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class C Value: V and < 2 V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A4 ESD Rating: Class IV Value: Passes V Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C MSL Rating MSL Rating: Level Test: 2 C convection reflow Standard: JEDEC Standard IPC/JEDEC J-STD-2 Solderability Compatible with both lead-free (2 C maximum reflow temperature) and tin/lead (24 C maximum reflow temperature) soldering processes. Contact plating: Annealed matte tin over copper. RoHs Compliance This part is compliant with EU 22/9/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C H 2 Br 4 2 ) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: Tel: info-sales@tqs.com Fax: For technical questions and application information: sjcapplications.engineering@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev D of 8 - Disclaimer: Subject to change without notice
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Product Overview The is an HBT single ended RF amplifier IC operating as return path amplifier capable of supporting DOCSIS 3.1 applications. This IC is designed to provide a low noise, high gain option
More informationTGA3500-SM 2-12 GHz Driver Amplifier
Applications General Purpose QFN 8x8mm 28L Product Features Frequency Range: 2 12 GHz Power: 23 dbm P SAT Gain: 34 db Output TOI: 29 dbm Noise Figure: 3 db Bias: V D = 5 V, I D = 0 ma, V G1 = -0.7 V, V
More informationRFSW1012SR. Broadband SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Ordering Information
Product Overview The is a single-pole double-throw (SPDT) switch designed for applications requiring very low insertion loss and high power handling capability. The excellent linearity performance of the
More informationAG303-63PCB. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz + dbm PdB @ 9 MHz +6 dbm OIP @ 9 MHz Single Voltage Supply Internally matched to Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
More informationTGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7-3.7 GHz P SAT :.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db
More informationTGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier
TGA78-CP Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal Gain: > db IM3: -
More informationTGA2818-SM S-Band 30 W GaN Power Amplifier
S-Band 3 W GaN Power Amplifier Applications Military Radar Civilian Radar Wideband Amplifiers Product Features Functional Block Diagram Frequency Range: 2.8-3.7 GHz Pout: >.5 dbm (Pin=27 dbm) Large Signal
More informationECG002 InGaP HBT Gain Block
Product Features DC 6 GHz 20 db Gain @ 1 GHz +15.5 dbm P1dB @ 1 GHz +29 dbm OIP3 @ 1 GHz 3.8 db Noise Figure Internally matched to 50 Ω Robust 1000V ESD, Class 1C Lead-free/green/RoHS-compliant SOT-86,
More informationTGL2201-SM T/R. Wideband Dual Stage VPIN Limiter. Applications. Ordering Information. Part No. ECCN Description
Applications LNA Receiver Chain Protection Military Radar Product Features 2-12 GHz Passive, High Isolation Limiter Low Loss < 1.0 db, X-band Return Loss > 10 db Flat Leakage < 18 dbm Input Power CW Survivability
More informationQPB9318 Dual-Channel Switch LNA Module
9 Product Overview The is a highly integrated front-end module targeted for TDD base stations. The switch module integrates a two-stage and a high power switch in a dual channel configuration. Power down
More informationQPA GHz Variable Gain Driver Amplifier
QPA8 Product Description Qorvo's QPA8 is an S-band two stage variable gain driver amplifier in a 5x5 mm QFN. The QPA8 operates from 2.7 to 3.8 GHz and provides 31dBm of P1dB output power with 26 db of
More informationTypical Performance 1. Absolute Maximum Ratings
Device Features +5V/680mA at operating bias condition Gain = 27.3 db @ 1850 MHz P1dB = 33.1 dbm @ 1850MHz LTE 10M ACLR = 23.5dBm Output Power at -50dBc @ 1850MHz Intergrated interstage matching Lead-free/Green/RoHS-compliant
More informationTGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
More informationAG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz +. dbm PdB @ 9 MHz +6 dbm OIP@ 9 MHz Single Voltage Supply Internally matched to Ω Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
More informationTQQ1013 Band 13 SAW Duplexer
Applications LTE Handsets, Data Cards & Mobile Routers Band 13 777 787 MHz Uplink 746 756 MHz Downlink 8 Pin 2.5 x 2.0 mm Package Product Features NoDrift SAW Technology With Near Zero TCF Low Insertion
More informationTGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier
Applications Radar Product Features Frequency Range:.1. GHz Pout: 9 dbm at PIN = 7 dbm PAE: 5 % Pulsed Power Gain: db at PIN = 7 dbm Bias: VD = V, IDQ = ma, VG = - V typical, pulsed (PW = 15 ms, DC = %)
More informationTQM GHz 1/4W Digital Variable Gain Amplifier
Product Overview The is a digital variable gain amplifier (DVGA) featuring high linearity and digital variable gain control in.5 db step sizes. This DVGA integrates a gain block, a digital-step attenuator
More informationQPD W, 48 V GHz GaN RF Power Transistor
Applications W-CDMA / LTE Macrocell Base Station, Band 1 and Band 3 Active Antenna General Purpose Applications 2 Lead NI400 Package Product Features Functional Block Diagram Operating Frequency Range:
More informationTGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier
2 to, W GaN Power Amplifier Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal
More informationTQQ7399 DC 2700 MHz Through Line
Applications General Purpose Wireless RF Bypass Paths Microwave Radio Test & Measurement Scientific Instruments Product Features 6 Pin 3 x 3 mm leadless SMT Package Functional Block Diagram DC 2700 MHz
More informationQPB7400SR QPB7400PCK. CATV 75Ω Adjustable Low Gain (9 11dB) RF Amplifier. Product Overview. Key Features. Functional Block Diagram.
Product Overview The is a low-cost RF amplifier designed for applications from 47 to 1218 MHz. The balance of low noise and distortion provides an ideal solution for a wide range of broadband amplifiers
More informationTGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM
More informationTQM EVB. Not for New Designs BC14/BC1/B25 BAW Duplexer. Applications. Functional Block Diagram. Product Features. General Description
TQM96314 Applications CDMA/LTE handset, data card & mobile router applications using the extension PCS band (Band Class 14) / BC1 / B25 8 Pin 2.6 x 2.1 x.88 mm Product Features Excellent Triple Beat Performance:
More informationTQM879008TR GHz 1/2 W Digital Variable Gain Amplifier. Product Overview. Key Features. Functional Block Diagram.
Product Overview The is a digital variable gain amplifier (DVGA) featuring high linearity over the entire gain control range. This amplifier module integrates two gain blocks, a digitalstep attenuator
More informationTGP2107-SM 6 to 18 GHz 6-Bit Digital Phase Shifter ( V C )
TGP217-SM Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital
More informationTGA3503-SM 2-30 GHz GaAs Wideband Gain Block
Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range: 2 3 GHz
More informationTGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 3.7 GHz PSAT:.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db Bias:
More informationTGA4906-SM 4 Watt Ka-Band Power Amplifier
TGA496-SM Applications Ka-Band Sat-Com VSAT 496 12 M34 QFN x mm 32L Product Features Functional Block Diagram Frequency Range: 28 31 GHz Power: 36 dbm Psat Gain: db Bias: Vd = 6 V, Idq = 1.6 A, Vg = -.7
More informationTGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
TGA94-HM Product Description Qorvo s TGA94-HM is a packaged power amplifier fabricated on Qorvo s. um GaN on SiC process (QGaN). Operating from 27 to 31 GHz, the TGA94- HM achieves 36.5 dbm saturated output
More informationQPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
More informationTypical Performance 1. 2 OIP3 _ measured on two tones with a output power 23dBm/ tone, F2 F1 = 1 MHz.. Absolute Maximum Ratings
Device Features +5V/550mA at operating bias condition Gain = 25.5 db @ 2.65 GHz P1dB = 33.5 dbm @ 2.65GHz LTE 10M ACLR = 22.7dBm Output Power at -50dBc @ 2.65GHz Intergrated interstage matching Lead-free/Green/RoHS-compliant
More informationT2G Q3 10W, 28V DC 6 GHz, GaN RF Power Transistor
Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power
More informationTGM2543-SM 4-20 GHz Limiter/LNA
TGM243-SM Applications Receiver front end building block Product Features QFN 7x7mm 22L Frequency Range: 4-2 GHz Input Power CW Survivability: 4 W Functional Block Diagram Gain: 17 db Noise Figure: 2 db
More informationT1G FS 30W, 28V, DC 6 GHz, GaN RF Power Transistor
Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power
More informationTGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier
Applications Radar Product Features Frequency Range: 3.1 3.6 GHz Pout: 5 dbm (at PIN = 27 dbm) Power Gain: 23 db (at PIN = 27 dbm) PAE: 51 % CW Bias: VD = pulsed (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG
More informationTQQ MHz LTE Band 7 Uplink BAW Filter
Applications LTE Band 7 Uplink Infrastructure Base Station General Purpose Wireless 6 Pin 3 x 3 mm leadless SMT Package Product Features Functional Block Diagram 70 MHz Bandwidth High Attenuation Low Loss
More informationTGA2214-CP 2 18 GHz 4 W GaN Power Amplifier
Product Description Qorvo s TGA2214-CP is a packaged wideband power amplifier fabricated on Qorvo s QGaN15 0.15 µm GaN on SiC process. Operating from 2 to 18 GHz, the TGA2214- CP generates > 4 W saturated
More informationQPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.
Product Description The is a discrete GaN on SiC HEMT which operates from 3.4 3.8 GHz. The device is a single stage matched power amplifier transistor. The can be used in Doherty architecture for the final
More informationMHz SAW Filter
Applications General Purpose For IF applications Product Features Typical 3 db bandwidth of 18.5 MHz Low loss High Attenuation Single-ended operation Ceramic Surface Mount Package (SMP) Small Size Dimensions:
More informationTQQ MHz LTE Band 3 Uplink BAW Filter
Applications LTE Band 3 Uplink Infrastructure Base Station General Purpose Wireless 6 Pin 3 x 3 mm leadless SMT Package Product Features Functional Block Diagram 75 MHz Bandwidth High Attenuation Low Loss
More informationTGA2622-CP 9 10 GHz 35 W GaN Power Amplifier
9 1 GHz W GaN Power Amplifier Applications Weather and Marine Radar Product Features Frequency Range: 9 1 GHz PSAT:.5 dbm @ PIN = 18 dbm PAE: >% @ PIN = 18 dbm Power Gain: 27.5 db @ PIN = 18 dbm Bias:
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