AG303-63PCB. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (1)
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1 AG-6 Product Features DC 6 MHz. db 9 MHz + dbm 9 MHz +6 dbm 9 MHz Single Voltage Supply Internally matched to Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications Mobile Infrastructure CATV / FTTX WLAN / ISM RFID WiMAX / WiBro Product Description The AG-6 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 9 MHz, the AG-6 typically provides. db gain, +6 dbm OIP, and + dbm PdB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding years at mounting temperatures of + C and is housed in a lead free/green/rohs-compliant SOT-6 industry standard SMT package. The AG-6 consists of a Darlington-pair amplifier using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG-6 will work for other various applications within the DC to 6 GHz frequency range such as CATV and WiMAX. Functional Diagram RF IN 6 Function Pin No. Input Output/Bias 6 Ground,,, RF OUT Specifications () Parameter Units Min Typ Max Operational Bandwidth MHz DC 6 Operational Temperature o C - + Test Frequency MHz 9 Gain db. Input Return Loss db Output Return Loss db Output PdB dbm + Output IP () dbm +. Output IP dbm + Noise Figure db. Test Frequency MHz 9 Gain db Output PdB dbm +.6 Output IP () dbm +. Device Voltage V. Device Current ma Typical Performance () Parameter Units Typical Frequency MHz 9 9 S db S db S db Output PdB dbm Output IP dbm Noise Figure db..... Test conditions:. T = ºC, Supply Voltage = + V, Rbias =., System.. OIP measured with two tones at an output power of - dbm/tone separated by MHz. The suppression on the largest IM product is used to calculate the OIP using a : rule. Absolute Maximum Rating Parameter Storage Temperature DC Voltage RF Input Power (continuous) Thermal Resistance, Rth For 6 hours MTTF Junction Temperature Rating - to + C +. V + dbm C/W +77 C Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. AG-6G AG-6PCB Description Standard tape / reel size = pieces on a 7 reel (lead-free/green/rohs-compliant SOT-6 Package) 7 MHz Fully Assembled Eval. Board TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page of August 9
2 PdB (dbm) Output Power (dbm) Output Power (dbm) OIP (dbm) OIP (dbm) S, S (db) Device Current (ma) AG-6 Typical Device RF Performance Supply Bias = + V, R bias =., I cc = ma Frequency MHz 9 9 S db S db S db Output PdB dbm Output IP dbm Noise Figure DB Test conditions: T = ºC, Supply Voltage = + V, Device Voltage =. V, Rbias =., Icc = ma typical, System.. OIP measured with two tones at an output power of - dbm/tone separated by MHz. The suppression on the largest IM product is used to calculate the OIP using a : rule.. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Return Loss 6 I-V Curve S S - 6 Optimal operating point.... Device Voltage (V) Output IP vs. Frequency Output IP vs. Frequency... -C +C +C 6... Output Power / Gain vs. Input Power frequency = 9 MHz Output Power / Gain vs. Input Power frequency = MHz.... Gain Output Power Input Power (dbm) Gain Output Power Input Power (dbm) - TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page of August 9
3 PdB (dbm) OIP (dbm) OIP (dbm) PdB (dbm) OIP (dbm) OIP (dbm) AG-6 Typical Device RF Performance (cont d) Supply Bias = +6 V, R bias =, I cc = ma Output IP vs. Frequency Output IP vs. Frequency... -c +c +c Typical Device RF Performance Supply Bias = + V, R bias =, I cc = ma Output IP vs. Frequency Output IP vs. Frequency... -c +c +c TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page of August 9
4 AG-6 Vcc Icc = ma Application Circuit R Bias Resistor C Bypass C. µf RF IN C Blocking AG-6 L RF Choke C Blocking RF OUT Recommended Component Values Reference Designator 9 9 L nh nh 6 nh 7 nh nh nh nh C, C, C. µf pf pf 6 pf 6 pf 6 pf 9 pf. The proper values for the components are dependent upon the intended frequency of operation.. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. Value / Type Size L 9 nh wirewound inductor 6 C, C 6 pf chip capacitor 6 C. F chip capacitor 6 C Do Not Place R. % tolerance Recommended Bias Resistor Values Supply R value Size Voltage V. ohms 6 6 V ohms 7 V ohms V ohms 9 V 7 ohms V 6 ohms V ohms The proper value for R is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of + V. A % tolerance resistor is recommended. Typical Device Data S-Parameters (V device = +. V, I CC = ma, T = C, calibrated to device leads) Freq (MHz) S (db) S (ang) S (db) S (ang) S (db) S (ang) S (db) S (ang) Device S-parameters are available for download from the website at: TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page of August 9
5 AG-6 Mechanical Information This package is lead-free/green/rohs-compliant. It is compatible with both lead-free (maximum 6 C reflow temperature) and leaded (maximum C reflow temperature) soldering processes. The plating material on the leads is annealed matte tin over copper. Outline Drawing Product Marking The component will be marked with a J designator followed by a two-digit numeric lot code on the top surface of the package. JXX Tape and reel specifications for this part are located on the website in the Application Notes section. MSL / ESD Rating ESD Rating: Class C Value: Passes V min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD-A ESD Rating: Class IV Value: Passes V min. Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD-C MSL Rating: Level at +6 C convection reflow Standard: JEDEC Standard J-STD- Land Pattern Mounting Config. Notes. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.mm (# /. ) diameter drill and have a final plated thru diameter of. mm (. ).. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink.. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink.. RF trace width depends upon the PC board material and construction. 6. Use oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. TriQuint Semiconductor, Inc Phone FAX: info-sales@tqs.com Web site: Page of August 9
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General Description The is a balanced amplifier module with embedded hybrid couplers to convert to single ended input and output ports. The module has an enable pin to allow for shutting down of the amplifier.
More informationApplications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier
Applications Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 10 12 GHz TOI: 43 dbm Power: 34.5 dbm Psat, 33 dbm P1dB Gain: 24 db Return
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Applications Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio IF and RF Applications General Purpose Wireless Product Features Integrates DSA + Amp Functionality 50 4000 MHz Broadband
More informationTQP7M W High Linearity Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a high linearity driver amplifier in industry standard, RoHS compliant, SOT-89 surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies
More informationCGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E
Dual CATV 5MHz to 1MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-1Z is a high performance GaAs HBT MMIC amplifier.
More informationFeatures. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features
More informationSBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier
Product Description Sirenza Microdevices SBB-89Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
More informationQPL9096 Ultra Low-Noise, Bypass LNA
General Description The is a high-linearity, ultra-low noise gain block amplifier with a bypass mode functionality integrated in the product. At. GHz, the amplifier typically provides db gain, +. dbm OIP,
More informationTypical Performance 1. 2 OIP3 _ measured with two tones at an output of 11 dbm per tone separated by 1 MHz. Absolute Maximum Ratings
Device Features OIP3 = 40.5 dm @ 1900 MHz Gain = 19.0 d @ 1900 MHz Output P1 d = 22.7 dm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protection Circuit Lead-free/RoHS-compliant SOT-89 SMT package
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Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm L Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: dbm Psat, 31 dbm P1dB Gain: 22 db TOI: 41 dbm at 21 dbm SCL
More informationMonolithic Amplifier PGA Flat Gain, High Dynamic Range to 1.5 GHz. The Big Deal
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More informationBroadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX
High Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal High Gain Broadband High Dynamic Range without external Matching Components May be used as a replacement to RFMD SBB5089Z a,b SOT-89
More informationTQP9113* 1 W Linear Amplifier. General Description. Product Features. Applications. Functional Block Diagram. Ordering Information
General Description The is a 1 W, linear, two-stage driver amplifier in a low-cost surface-mount package. The amplifier is able to achieve high performance with +42 dbm OIP3 and +30.4 dbm P1dB while only
More informationHMC639ST89 / 639ST89E
v3.1 HMC63ST / 63STE AMPLIFIER,.2-4. GHz Typical Applications The HMC63ST(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Features
More informationFeatures
HMC37SC7E v1.1.3-3. GHz Typical Applications The HMC37SC7E is ideal for: Cellular/PCS/3G WCS, mmds & ism Fixed Wireless & WLAN Private Land Mobile Radio Functional Diagram Features Single Supply: Vdd =
More informationPreliminary Datasheet
Product Description The is a reflective SPDT RF switch that can be used in high power and good performance WLAN 802.11 a/b/g/n/ac/ax, DOCSIS 3.0/3.1 and Wireless Communication applications. This device
More informationSGB-6433(Z) Vbias RFOUT
SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description RFMD s SGB-6433 is a high performance SiGe HBT MMIC amplifier
More informationRF OUT / N/C RF IN / V G
MAAM-111 MHz - 2 GHz Rev. V2 Features Functional Schematic 12 db Gain Ω Input / Output Match over Gain Range 3 db Gain Control with to -2 V Control +18 dbm Output Power + V, -. V DC, 7 ma Lead-Free 1.
More informationTQP7M Watt High Linearity Amplifier. General Description. Product Features. Functional Block Diagram. Applications. Ordering Information
General Description The is a high linearity driver amplifier in industry standard, RoHS compliant, QFN surface mount package. This InGaP / GaAs HBT delivers high performance across 6 27 MHz range of frequencies
More informationGain and Return Loss vs Frequency. s22. Frequency (GHz)
SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description RFMD s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
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Surface Mount Dual Matched MMIC Amplifier 50Ω DC to 5.2 GHz The Big Deal Gain, 14.1 db typ. at 2 GHz Dual matched amplifier for push-pull & balanced amplifiers High dynamic range CASE STYLE: JV2579 Product
More informationRoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
More informationMonolithic Amplifier LEE2-6+ Surface Mount. DC to 7 GHz. The Big Deal
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