AH1. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (4) Absolute Maximum Rating
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- Bridget Ellis
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1 Product Features 25 4 MHz +41 dbm OIP3 3 db Noise Figure.5 db Gain +22 dbm P1dB Lead-free/Green/RoHS-compliant SOT-8 Package Single +5 V Supply MTTF > 1 years Applications Mobile Infrastructure CATV / DBS W-LAN / Wi-Bro / WiMAX RFID Defense / Homeland Security Fixed Wireless Product Description The AH1 is a high dynamic range amplifier in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 1 years at mounting temperatures of +85 C. The AH1 is available in the environmentally-friendly lead-free/green/rohs-compliant SOT-8 package. The broadband amplifier uses a high reliability GaAs MMIC technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AH1 will work for other applications within the 25 to 4 MHz frequency range such as fixed wireless, W- LAN, and WiBro. Functional Diagram GND RF IN GND RF OUT Function Pin No. Input 1 Output/ 3 Ground 2, 4 Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz 25 4 Test Frequency MHz 8 Gain db.4.5 Input Return Loss db 8 Output Return Loss db Output P1dB dbm Output IP3 (2) dbm Noise Figure (3) db 3. Operating Current Range ma 18 Supply Voltage V 5 1. Test conditions unless otherwise noted: T = 25 ºC, 5 Ω system. 2. 3OIP measured with two tones at an output power of +5 dbm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Noise figure can be optimized by matching the input for optimal return loss. Typical Performance (4) Parameter Units Typical Frequency MHz 1 2 S21 db.2.2. S db S22 db Output P1dB dbm Output IP3 (2) dbm IS-5 Channel Power (5) db Noise Figure db Supply Voltage V 5 Device Current ma 4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page Measured with -45 dbc ACPR, IS-5 channels fwd. Absolute Maximum Rating Parameter Rating Storage Temperature 5 to + C Supply Voltage +6 V RF Input Power (continuous) +1 dbm Junction Temperature +16 C Thermal Resistance, Rth 5 C / W Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. AH1-G AH1-PCB Description Standard T/R size = 1 pieces on a 7 reel. (lead-free/green/rohs-compliant SOT-8 Pkg) GHz Fully Assembled Application Circuit WJ Communications, Inc Phone 1-8-WJ1-441 FAX: sales@wj.com Web site: Page 1 of 5 January 28
2 Typical Device Data S-Parameters (V DS = +5 V, I DS = ma, T = 25 C, unmatched device in a 5 ohm system) Input return loss can be improved with the appropriate input matching network shown later in this datasheet. Gain vs. Output Power 45 Output IP3 vs. Output Power MHz OIP3 Load Pull Circles 4 MHz 1% Idss 1 75% Idss 5% Idss Output Power (dbm) % Idss 25 75% Idss 2 5% Idss Output Power (dbm) IP3=35 IP3=36 IP3=37 IP3=38 IP3=3 IP3=41 VSWR=1.5 VSWR=2 2 Gain vs. Frequency Return Loss vs. Frequency w/o Matching Circuitry VSWR=3 VSWR=4 VSWR= S S S-Parameters (V D = +5 V, I D = ma, T = 25 C, calibrated to device leads) Freq (MHz) S (db) S (ang) S21 (db) S21 (ang) S (db) S (ang) S22 (db) S22 (ang) Device S-parameters are available for download off of the website at: WJ Communications, Inc Phone 1-8-WJ1-441 FAX: sales@wj.com Web site: Page 2 of 5 January 28
3 Application Circuit: 8 25 MHz (AH1-PCB) Typical RF Performance at 25 C Frequency MHz 1 2 S21 Gain db.2.2. S Input R.L. db S22 Output R.L. db Output P1dB dbm Output IP3 (+5 dbm / tone, 1 MHz spacing) dbm IS-5 Channel Power (@-45 dbc ACPR, channels fwd) dbm Noise Figure db ma All passive components are of size 63 unless otherwise noted. Component C1 is shown in the silkscreen but is not used for this configuration. ID= C2 Z= 22 Ohm EL=.2 Deg F=. GHz ID= Q1 NET= "AH1" ID= C3 L= 5.6 nh Vcc = +5 V ID= C5 ID= C4 L= nh ID= C6 Circuit Board Material:.62 total thickness with a. FR-4 top RF layer, 4 layers (other layers added for rigidity), 1 oz copper, 5Ω Microstrip line details: width =.25. Gain Return Loss S S22 1 Gain and Output IP3 vs. Temperature Frequency = 8, 81 Pout =5dBm Gain OIP Temperature ( o C) Output IP3 (dbm) -4 ACPR vs. Channel Power IS-5, Ch. Fwd, ±885 khz offset, 3 khz Meas BW, 1 MHz -4 ACPR vs. Channel Power IS-5, Ch. Fwd, ±885 khz offset, 3 khz Meas BW, MHz 23 P1dB and Noise Figure vs. Temperature Frequency = 8 MHz Output Channel Power (dbm) Output Channel Power (dbm) P1dB (dbm) P1dB NF Temperature ( o C) Noise Figure (db) WJ Communications, Inc Phone 1-8-WJ1-441 FAX: sales@wj.com Web site: Page 3 of 5 January 28
4 25-65 MHz Reference Design Freq. MHz Gain db S db S22 db OIP3 dbm +42 NF db ma S, S22 (sb) L= nh C=1 pf L=82 nh C=1 pf MHz Reference Design Freq. MHz 8 1 Gain db S db S22 db - - NF db ma Gain (db ) -1-2 S, S22 (db) C=1 pf L= nh L=1 nh +5 V C=1 pf C=1 pf Freq. GHz Gain db... S db S22 db NF db ma 235 MHz Reference Design S, S22 (sb) C=1.2 pf C=56 pf TLINP Z=5 Ohm L=22 nh L=25 mil Eeff=3.4 Loss= F= GHz C=56 pf Freq. GHz Gain db.8..5 S db S22 db P1dB dbm NF db ma 35 MHz Reference Design DB( S(1,1) ) (R) DB( S(2,2) ) (R) DB( S(2,1) ) (L) C=18 pf S, S22, (db) TLINP Z=8 Ohm L=5 mil Eeff=3.4 Loss= F= GHz C=1 pf L= nh C=18 pf WJ Communications, Inc Phone 1-8-WJ1-441 FAX: sales@wj.com Web site: Page 4 of 5 January 28
5 AH1-G (Green / Lead-free SOT-8 Package) Mechanical Information This package is lead-free/green/rohs-compliant. It is compatible with both lead-free (maximum 26 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking AH1G XXXX-X The AH1-G will be marked with an AH1G designator. An alphanumeric lot code ( XXXX-X ) is also marked below the part designator on the top surface of the package. The obsolete tin-lead package is marked with an AH1 designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the Application Notes section. MSL / ESD Rating Land Pattern ESD Rating: Class 1B Value: Passes 5V to <1V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A4 ESD Rating: Class IV Value: Passes 1V to <2V Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C MSL Rating: Level 3 at +26 C convection reflow Standard: JEDEC Standard J-STD-2 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.35mm (#8 /.5 ) diameter drill and have a final plated thru diameter of.25 mm (.1 ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. WJ Communications, Inc Phone 1-8-WJ1-441 FAX: sales@wj.com Web site: Page 5 of 5 January 28
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General Description The is a high-linearity, ultra-low noise gain block amplifier with a bypass mode functionality integrated in the product. At. GHz, the amplifier typically provides db gain, +. dbm OIP,
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ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package Data Sheet Description Avago Technologies ATF 531P8 is a single-voltage high linearity, low noise E phemt housed
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Features: Designed for single voltage operations Ideal for 0.5 4.0 GHz High Linearity / High Dynamic Range Applications Excellent RF Performance: o 44 dbm IP3 o 65 dbc ACPR o 28 dbm P1dB o 18 db SSG @
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