50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
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- Eustacia Chandler
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1 AWG115 Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG115, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 5 MHz to 4 MHz, being suitable for use in both receiver and transmitter of telecommunication system up to 4 GHz. It has an active bias network for stable current over temperature and process variation. The amplifier is available in an SOT363 package and passes through the stringent DC, RF, and reliability tests. 1.2 Features 14.8 db gain at 2 MHz 17. dbm P1dB at 2 MHz 36. dbm OIP3 at 2 MHz Gain flatness =.3 db at 5 ~ 25 MHz 5 input & output matching MTTF > 1 Years Single supply: +3.3 V 1.3 Applications S-parameters (db) Gain & Return Loss vs. Frequency(with BiasTees) S11 S21 S Frequency (MHz) Wide-band application at 5 ~ 3 MHz IF, CATV application at 5 ~ 12 MHz SMATV, ONU application at 5 ~ 3 MHz 1.4 Package Profile & RoHS Compliance SOT363, 2.1x2. mm 2, surface mount RoHS-compliant 1/11 ASB Inc. sales@asb.co.kr January 214
2 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +3.3 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 6 ma Device Voltage +3.3 V 1) OIP3 is measured with two tones at an output power of +4 dbm/tone separated by 1MHz. 2.2 Product Specification Supply voltage = +3.3 V, TA = +25 C, ZO = 5 Parameter Min Typ Max Unit Frequency 2 MHz Gain 14.8 db S db S db Noise Figure 2.5 db OIP3 36. dbm P1dB 17. dbm Current 6 ma Device Voltage +3.3 V 2.3 Pin Configuration Pin Description Simplified Outline 1, 2, 4, 5 Ground 2 Ground 3 RF_OUT & Bias /11 ASB Inc. sales@asb.co.kr January 214
3 2.4 Absolute Maximum Ratings Parameters Operation Case Temperature Storage Temperature Device Voltage Operation Junction Temperature Input RF Power (CW, 5 matched) Max. Ratings -4 to 85 C -4 to 15 C +6 V +15 C +25 dbm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 18 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 75 V MM Class A Voltage Level: 1 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 26 C reflow (Intentionally Blanked) 3/11 ASB Inc. sales@asb.co.kr January 214
4 3. Application: 5 ~ 3 MHz 3.1 Application Circuit & Evaluation Board Vdevice = +3.3 V C4 C3 L1 RF IN C1 C2 RF OUT AWG115 ASW126 PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-363-A2 Bill of Material Symbol Value Size Description Manufacturer AWG MMIC Amplifier ASB C1, C2, C3 1 pf 63 DC blocking capacitor Murata C4 1 F 63 Decoupling capacitor Murata L1 33 nh 63 RF choke inductor Murata 4/11 ASB Inc. sales@asb.co.kr January 214
5 3.2 Performance Table Supply voltage = +3.3 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 6 ma Device Voltage +3.3 V 1) OIP3 is measured with two tones at an output power of +4 dbm/tone separated by 1MHz. 3.3 Plot of S-parameter & Stability Factor S21 6 S-parameters (db) K S12 S22 S Stability Factor, K Frequency (MHz) 5/11 ASB Inc. sales@asb.co.kr January 214
6 4. Application: 5 ~ 12 MHz (IF, CATV) 4.1 Application Circuit & Evaluation Board Vdevice = +3.3 V C4 C3 L1 RF IN C1 C2 RF OUT AWG115 ASW126 PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A2 Bill of Material Symbol Value Size Description Manufacturer AWG MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 - - Not used C4 1 F 85 Decoupling capacitor Murata L1 1 H 63 RF choke inductor Samsung 6/11 ASB Inc. sales@asb.co.kr January 214
7 4.2 Performance Table Supply voltage = +3.3 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 6 ma Device Voltage +3.3 V 1) OIP3 is measured with two tones at an output power of +4 dbm/tone separated by 1MHz. 4.3 Plot of S-parameter & Stability Factor 3 2 S S-parameters (db) S11 K S22 S Stability Factor, K Frequency (MHz) 7/11 ASB Inc. sales@asb.co.kr January 214
8 5. Application: 5 ~ 3 MHz (SMATV, ONU) 5.1 Application Circuit & Evaluation Board Vdevice = +3.3 V C4 C3 L1 RF IN C1 C2 RF OUT AWG115 ASW126 PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A2 Bill of Material Symbol Value Size Description Manufacturer AWG MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 - - Not used C4 1 F 85 Decoupling capacitor Murata L1 1 H 63 RF choke inductor Samsung 8/11 ASB Inc. sales@asb.co.kr January 214
9 5.2 Performance Table Supply voltage = +3.3 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 6 ma Device Voltage +3.3 V 1) OIP3 is measured with two tones at an output power of +4 dbm/tone separated by 1MHz. 5.3 Plot of S-parameter & Stability Factor S21 6 S-parameters (db) S11 K S22 S Stability Factor, K Frequency (MHz) 9/11 ASB Inc. sales@asb.co.kr January 214
10 6. Package Outline (SOT363, 2.1x2.x1. mm) Symbols Dimensions (In mm) MIN NOM MAX A A A b C D F E e.65bsc e1 1.3BSC L.425REF 7. Surface Mount Recommendation (In mm) /11 ASB Inc. sales@asb.co.kr January 214
11 8. Recommended Soldering Reflow Profile 26 C 2~4 sec 2 C Ramp-up (3 C/sec) Ramp-down (6 C/sec) 15 C 6~18 sec (End of Datasheet) 11/11 ASB Inc. sales@asb.co.kr January 214
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Ultra High Dynamic Range Monolithic Amplifier 50Ω 0.03 to 2.7 GHz The Big Deal Ultra High IP3, +46.1 dbm Broadband High Dynamic Range without external Matching Components Medium power, 1W Excellent return
QPB7400SR QPB7400PCK. CATV 75Ω Adjustable Low Gain (9 11dB) RF Amplifier. Product Overview. Key Features. Functional Block Diagram.
Product Overview The is a low-cost RF amplifier designed for applications from 47 to 1218 MHz. The balance of low noise and distortion provides an ideal solution for a wide range of broadband amplifiers
Monolithic Amplifier EHA-163L+ Low Current, Wideband, Flat Gain. 50Ω DC to 16 GHz. The Big Deal
Low Current, Wideband, Flat Gain Monolithic Amplifier 50Ω DC to 16 GHz The Big Deal Super Wideband, DC to 16 GHz Excelent Gain Flatness, ±0.75 up to 12 GHz Low Current, 20 ma CASE STYLE: MC1630-1 Product
Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
![Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]](/thumbs/88/115381636.jpg "Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]")
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
MMA M GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN
MSW2T SP2T Surface Mount High Power PIN Diode Switch
RELEASED MSW2T-2041-193 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 400 MHz to 4 GHz Surface Mount SP2T Switch: 8mm x 5mm x 2.5mm Average Power: +52 dbm High
MMA GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 1 2 3 4 5 32 31 30 29 28 27 26 25 24
Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX in a single amplifier.
Flat Gain, Ultra-Wideband Monolithic Amplifier 50Ω 0.01 to 12 GHz The Big Deal Ultra broadband performance Excellent Gain Flatness through 8 GHz Broadband without external matching components CASE STYLE:
MMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
CMD132P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.
Features Functional Block Diagram Ultra low noise figure Low current consumption High gain broadband performance Single supply voltage: +3.6 V @ 3 ma Pb-free RoHs compliant 3x3 QFN package Description
Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V
v.7 HMCLC Typical Applications The HMCLC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter HMC815B
Data Sheet 1 GHz to 7 GHz, GaAs, MMIC, I/Q Upconverter HMC1B FEATURES Conversion gain: db typical Sideband rejection: dbc typical OP1dB compression: dbm typical OIP3: 7 dbm typical LO to RF isolation:
400 MHz 4000 MHz Low Noise Amplifier ADL5521
FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 db at 900 MHz Including external input match Gain of 20.0 db at 900 MHz OIP3 of 37.7 dbm at 900 MHz P1dB of 22.0 dbm at 900 MHz Integrated
20 MHz to 500 MHz IF Gain Block ADL5531
Data Sheet FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at 190 MHz Output 1 db compression:
MSW3T SP3T Surface Mount High Power PIN Diode Switch
RELEASED MSW3T-3200-150 SP3T Surface Mount High Power PIN Diode Switch Features: Surface Mount SP3T Switch: 9mm x 6mm x 2.5mm Range: 50 MHz to 3.0 GHz Industry Leading Average Power Handling: +50 m (CW)
Features. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
1 MHz to 2.7 GHz RF Gain Block AD8354
1 MHz to 2.7 GHz RF Gain Block AD834 FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply
HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz
v1.65 Typical Applications The HMC471MSG / HMC471MSGE is a dual RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
5.5 GHz to 8.6 GHz, GaAs, MMIC, I/Q Upconverter HMC6505A
Data Sheet FEATURES Conversion gain: db typical Sideband rejection: dbc typical Output P1dB compression at maximum gain: dbm typical Output IP3 at maximum gain: dbm typical LO to RF isolation: db typical
QPA9801SR MHz 1/4W Balanced Amplifier. General Description. Product Features. Functional Block Diagram Applications. Ordering Information
General Description The is a balanced amplifier module with embedded hybrid couplers to convert to single ended input and output ports. The module has an enable pin to allow for shutting down of the amplifier.
1 MHz to 2.7 GHz RF Gain Block AD8354
Data Sheet FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply stable Noise figure: 4.2