CGA-6618 CGA-6618Z Pb

Transcription

1 Product Description Sirenza Microdevice s CGA- is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The CGA- contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push pull configuration. The matte tin finish on Sirenza s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive /9. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Symbol G OIP OIP P IRL ORL NF CSO CTB XMOD V D I D Amplifier Configuration Small Signal Gain CGA- CGA-Z Pb RoHS Compliant & Green Package Preliminary Dual CATV MHz to MHz High Linearity GaAs HBT Amplifier Product Features Now available in Lead Free, RoHS Compliant, & Green Packaging Excellent CSO/CTB/XMOD at + mv Output Power per Tone Dual Devices in each SOIC- Package simplify Push-Pull configuration PC board layout ESOP- Package Applications CATV Head End Driver and Predriver Amplifier CATV Line Driver Amplifier P arameter F req.(mhz ) M in. T yp. Output Second Order Intercept Point Tone Spacing = MHz, Pout per tone = + m Output Third Order Intercept Point Tone Spacing = MHz, Pout per tone = + m Output Power at Gain Compression Input Return Loss Output Return Loss ELECTRICAL SPECIFICATIONS Noise Figure Balun Insertion Loss Included Units Worst Case Over Band, 79 Ch., Flat, +mv Worst Case Over Band, 79 Ch., Flat, +mv 7 Worst Case Over Band, 79 Ch., Flat, +mv Device Operating Voltage... V Device Operating Current 7 ma R hermal Resistance (Junction to Lead) T H(J-L) 7 T C/ W Test Conditions: V S = V I D = ma Typ. R BIAS = Ohms T L = ºC Z S = Z L = 7 Ohms Push Pull Application Circuit m m m The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 7 Sirenza Microdevices, Inc.. All worldwide rights reserved. S. Technology Ct., Broomfield, CO Phone: () SMI-MMIC EDS-99 Rev K

2 CGA- Dual GaAs HBT Amplifier Absolute Maximum Ratings Parameter Absolute Limit Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I D V D < ( T J - T ) / R, L TH j-l Device Current (I ) ma D Device Voltage (V ) 7 V D RF Input Power + m Junction Temp. (T ) + C J Operating Temp. Range (T ) - C to + C L Storage Temp. Min. Storage Temp. + C - C Typical RF Performance: V S =V, I D T L =+ C, R BIAS = Ohms, Push-Pull Config. Gain vs. Frequency Gain () 7 -C +C +C 7 9 S () vs. Frequency S () vs. Frequency - - -C +C - - -C +C - +C - +C S () S () Ohm Push Pull S-parameters are available for download at S. Technology Ct., Broomfield, CO Phone: () SMI-MMIC EDS-99 Rev K

3 CGA- Dual GaAs HBT Amplifier Typical RF Performance: V S =V, I D T L =+ C, R BIAS = Ohms, Push-Pull Config. Third Order Intercept Point vs. Frequency over Temperature 9 Second Order Intercept Point vs. Frequency over Temperature IP (m) -C +C +C 7 9 Freq. (MHz) IP (m) 7 7 -C +C +C Freq. (MHz) Second Harmonic vs. Pout and Freq. Data shown is typical at C Third Harmonic vs. Pout and Freq. Data shown is typical at C 9 9 IM () 7 MHz MHz MHz MHz IM () 7 MHz MHz MHz MHz Pout (m) Pout (m). Noise Figure vs. Frequency Over Temperature CTB/CSO/XMOD mv/chan., Flat NF() C +C + Xmod CSO+ CTB CSO Freq. (MHz) Freq. (MHz) S. Technology Ct., Broomfield, CO Phone: () SMI-MMIC EDS-99 Rev K

4 CGA- Dual GaAs HBT Amplifier CSO/CTB/XMOD Performance: V S =V, I D T L =+ C, R BIAS =9 Ohms, Push-Pull Config, 79 Ch. Flat Analog, No Digital Channels. Push-Pull CGA- CTB vs. Pout and Freq. Push-Pull CGA- XMOD vs. Pout and Freq. 9 mv mv mv mv mv mv 9 mv mv mv mv mv mv 7 7 Push-Pull CGA- CSO- vs. Pout and Freq. Push-Pull CGA- CSO+ vs. Pout and Freq mv mv mv mv mv mv mv mv mv mv mv mv Note: CSO measurements > can be limited by system noise. S. Technology Ct., Broomfield, CO Phone: () SMI-MMIC EDS-99 Rev K

5 CGA- Dual GaAs HBT Amplifier Typical RF Performance - Single Ended - Ohm System V S =V, I D =ma (one amp biased), T L =+ C, R BIAS = Ohms Gain () Gain & Isolation vs. Frequency Gain () Isolation () Frequency (GHz) Isolation () S & S vs. Frequency S - S Frequency (GHz) Typical RF Performance - Single Ended - 7. Ohm System V S =V, I D =ma (one amp biased), T L =+ C, R BIAS = Ohms Gain & Isolation vs. Frequency - - S & S vs. Frequency Gain () Gain () Isolation () Frequency (GHz) Isolation () S - S Frequency (GHz) Ohm and 7. Ohm Single Ended S-parameter files are available for download at S. Technology Ct., Broomfield, CO Phone: () SMI-MMIC EDS-99 Rev K

6 CGA- Dual GaAs HBT Amplifier Pin # Function Description Device Pin Out RF IN Device RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the schematic.,,,7 Ground Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF IN Device Same as pin RF output and bias pin. Bias should be supplied to this pin through an external series RF OUT / Vcc resistor and RF choke inductor. Because DC biasing is present on this pin, a DC Device blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. 7 RF OUT / Vcc Same as pin Device EPAD Ground Exposed area on the bottom side of the package must be soldered to the ground plane of the board for proper thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern on page. Basic Application Schematic -7 MHz Evaluation Board Layout -7 MHz Vs Rbias RBIAS μf Tant..μF pf pf uf Tant. RF INPUT RF OUTPUT nh Balun ETC-- pf.uf pf pf nh pf Balun ETC-- Macom ETC-- pf pf, Amp Amp CGA- SOIC-,7 pf pf nh Macom ETC-- pf Rbias nh uf Tant. pf pf pf.uf ECB- Rev A ESOP- Push-Pull Eval Board μf Tant..μF pf pf Recommended Bias Resistor I D =ma R = ( V -V / I S D BIAS ) D RBIAS Vs Values for Supply Voltage(V ) V 9 V V V S Note: R R BIAS 7 provides DC bias stability over temperature. B IAS Part Identification Marking PCB Recommendations. Solder the copper pad on the backside of the device package to the ground plane.. Use a large ground pad area with many plated through-holes as shown.. We recommend or ounce copper. Measurement for this data sheet were made on a mil thick FR- board with ounce copper on both sides. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. CGA- CGA-Z Part Number Ordering Information Part Number Reel Size Devices/Reel CGA- 7" CGA-Z 7" S. Technology Ct., Broomfield, CO Phone: () SMI-MMIC EDS-99 Rev K

7 CGA- Dual GaAs HBT Amplifier - MHz Application Circuit: V S =V, I D T L =+ C, Push-Pull Config. Gain vs. Frequency Return Loss vs. Frequency - S () S and S () S S P and IP vs. Frequency Noise Figure vs. Frequency 9 7 P (m) 9 7 IP (m) NF () 7 P IP MHz Application Schematic - MHz Evaluation Board Layout 7 9 Vs Rbias RBIAS μf Tant..μF pf pf uf Tant. Macom ETC-T. μf Amp μη. μf RF INPUT Balun ETC-T.uF uh.uf pf pf.uf Balun ETC-T RF OUTPUT,,7. μf Amp CGA- SOIC- μf Tant..μF pf pf. μf μη Macom ETC-T.uF Rbias uh uf Tant..uF pf pf.uf ECB- Rev A ESOP- Push-Pull Eval Board RBIAS Vs S. Technology Ct., Broomfield, CO Phone: () SMI-MMIC 7 EDS-99 Rev K

8 CGA- Dual GaAs HBT Amplifier PCB Pad Layout Dimensions in inches [millimeters] Sized for mil thick FR- TOP VIEW 7 Nominal Package Dimensions & Package Marking Dimensions in inches [millimeters] Refer to package drawing posted at for tolerances. BOTTOM VIEW PACKAGE TYPE: ESOP- Lot Code CGA. [.97]. [.99]. [.]. [.]. [.9] EXPOSED PAD.9 [.9]. [.7]. [.]. [.9]. [.7]. [.] x DETAIL A. [.]. PARTING LINE.9 [.9] SIDE VIEW. [.7] SEATING PLANE SEE DETAIL A. [.97] END VIEW. S. Technology Ct., Broomfield, CO Phone: () SMI-MMIC EDS-99 Rev K