SXA-389B SXA-389BZ MHz ¼ W Medium Power GaAs HBT Amplifier with Active Bias

Transcription

1 Product Description Sirenza Microdevices SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 4- cellular, ISM, WLL, PCS, W- CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications Typical OIP 3, P1, Gain OIP3 P1 Gain SXA-389B SXA-389BZ 4- ¼ W Medium Power GaAs HBT Amplifier with Active Bias Product Features Now Available in Leed Free, RoHS Compliant, & Green Packaging Lower Rth for increased MTTF 1 8 hrs. at T Lead = 85 C On-chip Active Bias Control, Single 5V Supply Excellent Linearity: + typ. OIP 3 at 196 High P1 : + typ. High Gain: at 85 Efficient: consumes only 575 mw Applications Pb W-CDMA, PCS, Cellular Systems Multi-Carrier Applications RoHS Compliant & Green Package Symbol P arameters: Test Conditions: Z = 5 Ohms, Ta = C P 1 Output Power at 1 Compression S 21 Small signal gain S 11 Input VSWR Output Third Order Intercept Point OIP 3 (Pout/Tone = +11, Tone spacing = 1 ) NF P I D R th DISS Noise Figure Device Current Operating Dissipated Power, j-l Thermal Resistance (junction - lead) f = 85 f = 196 f = 214 f = 2 f = 85 f = 196 f = 214 f = 2 f = 85 f = 196 f = 214 f = 2 f = 85 f = 196 f = 214 f = 2 f = 85 f = 196 f = 214 f = 2 Vcc = 5V U nits M in. T yp :1 1.3:1 1.2:1 1.2: :1 6.3 ma mw 575 C/ W 7 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 3 Sirenza Microdevices, Inc. All worldwide rights reserved. 1

2 85 Application Circuit Data, V CC = 5V, I D = 115mA Note: Tuned for Output IP3 P1 vs. Frequency Gain vs. Frequency Input/Output Return Loss, Isolation vs. Frequency, T= C - S11 - S12 - S Third Order Intercept vs. Frequency (P OUT per tone = 11) Third Order Intercept vs. Tone Power Frequency = Adjacent Channel Power (c) Adjacent Channel Power vs. Channel Output Power P OUT per tone () Channel Output Power () IS-95, 9 Channels Forward 2

3 196 Application Circuit Data, V CC = 5V, I D = 115mA Note: Tuned for Output IP3 P1 vs. Frequency Gain vs. Frequency Input/Output Return Loss, Isolation vs. Frequency, T= C S11 S12 S Third Order Intercept vs. Frequency (P OUT per tone = 11) Third Order Intercept vs. Tone Power Frequency = 1.96 Adjacent Channel Power (c) Adjacent Channel Power vs. Channel Output Power P OUT per tone () Channel Output Power () IS-95, 9 Channels Forward 3

4 214 Application Circuit Data, V CC = 5V, I D = 115mA Note: Tuned for Output IP3 P1 vs. Frequency Gain vs. Frequency Input/Output Return Loss, Isolation vs. Frequency, T= C Third Order Intercept vs. Frequency (P OUT per tone = 11) S11 S12 S Third Order Intercept vs. Tone Power Frequency = Adjacent Channel Power vs. Channel Output Power P OUT per tone () Adjacent Channel Power (c) Channel Output Power () W-CDMA, 64 DPCH + Overhead 4

5 2 Application Circuit Data, V CC = 5V, I D = 115mA Note: Tuned for Output IP3 P1 vs. Frequency Gain vs. Frequency Input/Output Return Loss, Isolation vs. Frequency, T= C S11 S12 S22 Third Order Intercept vs. Frequency (P OUT per tone = 11) Third Order Intercept vs. Tone Power Frequency = P OUT per tone () 5

6 Application Schematic for 85, 2 Vc c C3 RFin Z=5 Ω, E Z=5 Ω, EL3 C7 RFout C5 Ref. Des. Vendor Series 85 2 Ref. Des. Vendor Series 85 2 Matsuo 267M214K.1uF 1%.1uF 1% 3.9pF 1.pF 1pF 1pF Position 1 2 C3, C7 47pF 22pF Toko L68-FS 33nH 15nH 47pF 1.2pF E C5 5.6pF - EL Evaluation Board Layout for 85, 2 RFin + C3 C7 RFout C5 1 2 SIRENZA MICRODEVICES SOT-89 Eval Board ECB Rev B 6

7 Application Schematic for 196, 214 Vc c C3 RFin Z=5 Ω, E Z=5 Ω, EL3 C7 RFout Ref. Des. Vendor Series 196/214 Ref. Des. Vendor Series 196/214 Matsuo 267M214K.1uF 1% 1.pF 1pF Toko L68-FS 18nH C3, C7 22pF 2.2pF E EL3 C5 - Evaluation Board Layout for 196, 214 RFin Jumper + C3 C7 RFout SIRENZA MICRODEVICES SOT-89 Eval Board ECB Rev B 7

8 Absolute Maximum Ratings Parameter Absolute Limit Supply Current (I ) ma D Device Voltage Power Dissipation RF Input Power (V ) 6. V C C 15 mw 1 mw Junction Temp. (T ) +165 º C J Operating Lead Temp. (T ) -4 to +85 º C L Storage Temp. +15 º C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Part Number Ordering Information Part Number Devices Per Reel Reel Size SXA-389B 1 7" SXA-389BZ 1 7" Bias Conditions should also satisfy the following expression: I D V CC ( max) < ( T - T )/ R,j-l J L th ESD: Class 1B (Passes 5V ESD Pulse) Appropriate precautions in handling, packaging and testing devices must be observed. Pin # Function 1 Base 2 GND & Emitter 3 Collector 4 ND & Emitter Base Pin Pin Description Description Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector Pin G Same as Pin 2 Part Identification Marking 4 4 XA3B A3BZ See Application Note AN Recommended Mounting Configuration for Optimum RF and Thermal Performance Plated Thru Holes (." DIA) Ground Plane SXA-389B for Package Outline Drawing Machine Screws (Optional) 8