SZP-5026Z GHz 2W InGaP Amplifier

Transcription

1 Product Description Sirenza Microdevices SZP-Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for. equipment in the.-.ghz bands. It can run from a V to V supply. It is internally prematched on the input and output to achieve broadband performance and ease of matching at the board level. It features an on chip input power detector, on/off power control, ESD protection, excellent overall robustness and a proprietary hand reworkable and thermally enhanced SOF- package. This product is RoHS and WEEE Compliant with a matte tin finish. Functional Block Diagram Vcc SZP- Preliminary SZP-Z.-.GHz W InGaP Amplifier Pb Proprietary SOF- Package RoHS Compliant & Green Package Product Features PdB V.a Mb/s Class AB Performance Pout = EVM,.GHz,Vcc V, ma On-chip Input Power Detector Internally Prematched Input and Output Proprietary Low Thermal Resistance Package Hand Solderable and Easy Rework Power up/down control < μs RFIN RFOUT Vbias Pow er Up/Dow n Control Key Specifications Active Bias Pow er Detector Applications. WiMAX Driver or Output Stage GHz. WLAN and ISM Applications Symbol Parameters: Test Conditions,.-.GHz App Circuit Z = Ω, V CC =.V, Iq = ma, T BP = ºC Unit Min. Typ. Max. f O Frequency of Operation MHz P db Output Power at db Compression.GHz dbm. S Small Signal Gain.GHz db. EVM EVM at dbm Output Power (.a Mb/s) -.GHz %. IM Third Order Suppression (Pout=dBm per tone) -.GHz dbc - NF Noise Figure at.ghz db. IRL Worst Case Input Return Loss.-.GHz db ORL Worst Case Output Return Loss.-.GHz Vdet Range Output Voltage Range for Pout=dBm to dbm V. to. I cq Quiescent Current (V cc = V) ma I VPC Power Up Control Current (V pc =V) ma. I leak Vcc Leakage Current (V cc = V, V pc = V) μa R th, j-l Thermal Resistance (junction - lead) ºC/W The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright Sirenza Microdevices, Inc. All worldwide rights reserved. South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B

2 SZP-Z.-.GHz W Power Amp Typical V Performance with Appropriate Application Circuit (Vcc=V, Icq=mA, *.a Mb/s) Parameter Units.GHz.GHz.GHz.GHz Pout=dBm db.... PdB dbm.... EVM* dbm.... Pout.% EVM* ma Input Return Loss db Output Return Loss db Pin Out Description Pin # Function Description VBIAS This is the supply voltage for the active bias circuit. RFIN This is the RF input pin and has a DC voltage present. An external DC block is required. VPC Power up/down control pin. The voltage on this pin should never exceed the voltage on pin by more than.v unless the supply current from pin is limited < ma. VDET This is the output port for the power detector. It samples the power at the input of the amplifier. RFOUT/VCC This is the RF output pin and DC connection to the collector. NC This pin is not connected internal to the package. Buss it to pin as shown on the appropriate app circuit to achieve the specified performance. GND GND Absolute Maximum Ratings Parameters Value Unit VC Collector Bias Current (I VC ) ma Device Voltage (V cc ). V Power Dissipation W Operating Lead Temperature (T L ) - to + ºC **Max RF output Power for ohm continuous long term operation dbm Max Modulated(***OFDM) RF Input Power for ohm output load dbm Max Modulated(***OFDM) RF Input Power for : VSWR output load dbm Storage Temperature Range - to + ºC Operating Junction Temperature (T J ) ºC ESD Human Body Model V Moisture Sensitivity Level MSL Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: I D V D < (T J - T L ) / R TH j-l ** With specified application circuit. *** Modulation schemes include.a/g,. These pins are DC connected to the backside paddle. They provide goos thermal connection to the backside paddle for hand soldering and rework. Many thermal and electrical GND vias are recommended as shown in the landing pattern. VBIAS RFIN VPC Simplified Device Schematic GND GND Bias Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. NC RFOUT/VCC VDET South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B

3 SZP-Z.-.GHz W Power Amp Measured.-. GHz Application Circuit Data (V cc = V pc =.V, I q = ma, T=C) Source EVM =.%, not deembedded from data. Typical EVM vs Pout F=.GHz.g, OFDM Mb/s, QAM Typical EVM vs Pout F=.GHz.g, OFDM Mb/s, QAM EVM(%) EVM(%) -c +c +c -c +c +c IM(dBc) IM vs Pout ( Tone Avg), T=+c Tone Spacing = MHz.GHz.GHz Gain(dB) Typical Forward Gain vs Pout, T=+c.GHz.GHz Typical Forward Gain vs Pout, F=.GHz Typical Forward Gain vs Pout, F=.GHz Gain(dB) Gain(dB) +c -c +c +c -c +c South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B

4 SZP-Z.-.GHz W Power Amp Measured.-. GHz Application Circuit Data (V cc = V pc =.V, I q = ma, T=C) Narrowband S - Input Return Loss Narrowband S - Reverse Isolation S (db) C -C C S(dB) C C C Narrowband S - Forward Gain Narrowband S - Output Return Loss S (db) C C C S (db) C C C.. DC Supply Current vs Pout, T=+c Noise Figure F=.-.GHz O.T.. Idc(A)......GHz.GHz NF(dB).. Frequency(MHz) C C South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B

5 SZP-Z.-.GHz W Power Amp Measured.-. GHz Application Circuit Data (V cc = V pc =.V, I q = ma, T=C) RF Power (Vdet) vs Pout F=.GHz RF Power (Vdet) vs Pout F=.GHz.... Vdet(V)... Vdet(V) c +c +c -c +c +c Broadband S - Input Return Loss Broadband S - Reverse Isolation S (db) - - S(dB) C C C -C C C Broadband S - Forward Gain Broadband S - Output Return Loss S (db)... -C C C S (db) C C C South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B

6 SZP-Z.-.GHz W Power Amp Measured.-. GHz Application Circuit Data (V cc = V pc =.V, I q = ma, T=C) Typical EVM vs Pout F=.GHz.g, OFDM Mb/s, QAM Typical EVM vs Pout F=.GHz.g, OFDM Mb/s, QAM EVM(%) EVM(%) -c +c +c -c +c +c IM(dBc) IM vs Pout ( Tone Avg), T=+c Tone Spacing = MHz.GHz.GHz Gain(dB) Typical Forward Gain vs Pout, T=+c.GHz.GHz Typical Forward Gain vs Pout, F=.GHz Typical Forward Gain vs Pout, F=.GHz Gain(dB) Gain(dB) +c -c +c +c -c +c South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B

7 SZP-Z.-.GHz W Power Amp Measured.-. GHz Application Circuit Data (V cc = V pc =.V, I q = ma, T=C) Narrowband S - Input Return Loss - Narrowband S - Reverse Isolation S (db) - - S(dB) C C C C C C Narrowband S - Forward Gain Narrowband S - Output Return Loss S (db) C C C S (db) C C C DC Supply Current vs Pout, T=+c DC Supply Current vs Pout, F=.GHz Idc(A).. Idc(A) GHz.GHz -c +c +c South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B

8 SZP-Z.-.GHz W Power Amp Measured.-. GHz Application Circuit Data (V cc = V pc =.V, I q =ma, T=C) Idc(A) DC Supply Current vs Pout, F=.GHz c +c +c NF(dB) Noise Figure F=.-.GHz O.T.... Frequency(MHz) +C +C RF Power (Vdet) vs Pout F=.GHz RF Power (Vdet) vs Pout F=.GHz Vdet(V).. Vdet(V) c +c +c -c +c +c South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B

9 SZP-Z.-.GHz W Power Amp Measured.-. GHz Application Circuit Data (V cc = V pc =.V, I q = ma, T=C) Broadband S - Input Return Loss Broadband S - Reverse Isolation S (db) C C C S(dB) C C C Broadband S - Forward Gain Broadband S - Output Return Loss S (db)... -C C C S (db) C C C South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B

10 .-.GHz Evaluation Board Schematic For V+ = Vcc = Vpc =.V, Iq=mA Preliminary SZP-Z.-.GHz W Power Amp Bias SZP-.-.GHz Evaluation Board Layout For V+ = Vcc = Vpc =.V, Iq=mA Board material GETEK, mil thick, Dk=., oz. copper R C C C C R C R Q L C C R South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B

11 SZP-Z.-.GHz W Power Amp.-. GHz Evaluation Board Schematic For V+ = Vcc = Vpc =.V, Iq=mA Bias SZP-.-.GHz Evaluation Board Layout For V+ = Vcc = Vpc =.V, Iq=mA Board material GETEK, mil thick, Dk=., oz. copper R C C C C C Q L C C R R R South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B

12 Part Symbolization The part is symbolized with a SZP-Z. Marking designator will be on the top surface of the package. Package Outline Drawing ( dimensions in mm [in] * Matte tin finish Preliminary SZP-Z.-.GHz W Power Amp Part Number / Evaluation Board Ordering Information Part Number Description Reel Size Devices/ Reel SZP-Z* Lead Free, RoHs compliant SZP-Z-EVB.-.GHz Evaluation Board N/A N/A SZP-Z-EVB.-.GHz Evaluation Board N/A N/A Recommended Metal Land Pattern (dimensions in mm [in]): Proprietary SOF- Package South Technology Court Broomfield, CO Phone: () SMI-MMIC EDS- Rev B