2.4~2.5 GHz 1 Watt Power Amplifier Pin Details

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1 2.~2. GHz Watt Power Amplifier is a linear, two-stages power amplifier MMIC with high output power in 2.GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers 2 out put power, under Mbps OFDM (IEEE82.g) modulation, with 3% EVM.The PA also includes onchip power detector, providing a DC voltage proportional to the output power of device. The is housed in a 3 x 3(mm), pin, QFN leadless package. 22 linear output power with Mbps OFDM Modulation at V 28. linear output power with Mbps CCK Modulation at V Single V Power Supply 27 db Small Signal Gain at V On-Chip Power Detector Major Applications Pin Details IEEE 82.b/g Wireless LAN Systems 2. GHz ISM Band Application Suitable for high power WLAN applications Pin Number 2 Name RF_IN Description RF input 3 Dect_V Detector Supply Voltage Functional Block Diagram Dect_Out Detector Output Vb First stage Bias 3 7 Vb2 Second stage Bias Vcc Vcc Power supply input Power supply input QFN-pin, 3x3 (mm) Pkg Base 23 RF Integrated Corporation. All rights reserved. Tel: of

2 ~2. GHz Watt Power Amplifier Frequency Range Parameter Min. 2. Specification Typ. Max. Power Amplifier Overall Spec. 2. Unit GHz Condition PdB 29 3 Vcc = V Small Signal Gain db linear output power 22 EVM < 3.2% with 82.g Mbps OFDM modulated signal. 28. Meeting 82.b spectrum mask ACPR, st Side Lobe < - 33dBc 2 nd Side Lobe < -dbc, DSSS modulation Power Added Efficiency 3 % At PdB Gain Flatness ±.3 db Input Impedance ohms With external matching Input/outpu VSWR./2. Harmonics 2f 3f - -3 dbc At PdB Current Consumption ma Vcc = V, At PdB Absolute Maximum Ratings Parameter Rating Unit DC Power Supply V DC Supply Current ma RF Input Power Operating Ambient Temperature - to +8 Storage Temperature - to +2 Notes:.Exceeding Maximum ratings could cause damage to the device. 2.This device operation condition is biasing at V, please refer to the application note. Caution RF Integrated Corp. believes the information provided is reliable at present time. However, we assumes no responsibility for inaccuracies and omissions and use of the information shall be entirely at the user s own risk. RF Integrated Corp. reserves the right to make change to the specifications without notice. Tel: RF Integrated Corporation. All rights reserved. 2of

3 ~2. GHz Watt Power Amplifier Output Power and PAE Detector output vs. output power PdB = Vcc= V, Vb=2.8 V Icc= ma, 2. GHz Vcc=V, Vb=2.8V Pout() PAE(%) Pout() Pin() Fig. IEEE82.g Mbps OFDM modulation EVM Vcc=V, Vb=2.8V PAE(%) Vdet(V) Pout() Fig.2 ACPR Channel Power =28. st side lobe= - 33dBc, 2 nd side lobe= - dbc Pin=, Vcc=V, Vb=2.8V EVM(%) Pout Fig. 3 Fig. Tel: RF Integrated Corporation. All rights reserved. 3of

4 2.~2. GHz Watt Power Amplifier Small Signal S-Parameter Data Vcc=V, Vb=2.8V S Forward Reflection Input Returnloss Fig. Vcc=V Vb=2.8V S22 Reverse Reflection Output Returnloss Fig RF Integrated Corporation. All rights reserved. Tel: of

5 ~2. GHz Watt Power Amplifier Vcc=V Vb=2.8V S2 Forward Transmission Gain Fig. 7 Temperature Dependence of Output Power Vcc=V, Vb=2.8V 3 3 Pout() 2 2 Fig Pin() 27-8 All data were measured on the evaluation board. 23 RF Integrated Corporation. All rights reserved. Tel: of