AWL5911. AWL a/n/ac 5 GHz Power Amplifer Product Definition PRELIMINARY DATA SHEET - Rev VCC1 VCC3 VCC2 GND GND GND GND GND GND PA_EN
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1 802.11a/n/ac 5 GHz Power Amplifer Product Definition PRELIMINARY DATA SHEET Rev 1.3 FEATURES Supports ac highdata rate standard 1.8% Dynamic POUT = 22 dbm with ac MCS9HT80 waveform, 5.0 V 33 db of Linear Power 5.0 V Power Detector with High Accuracy Over 3:1 VSWR 1.8 V CMOS Compatible PA Enable Pin Single 3.3/5.0 V Supply Voltage 50 ΩInternally Matched RF Ports Leadfree and RoHS Compliant 4 x 4 x 0.80 mm QFN package RFIN 20 VCC VCC2 VCC3 AWL RFOUT APPLICATIONS Access Points Media Gateways Set top boxes Smart TV s 4 5 PA_EN DET PRODUCT DESCRIPTION The ANADIGICS AWL5911 WLAN Power Amplifier is an easy to use module that delivers high levels of linearity and efficiency for high data rate applications. Designed for the 5 GHz WLAN standards, it supports IEEE a/n/ac applications Figure 1: Pinout Diagram Requiring only a single +3 V to +5 V supply and a CMOS compatible 1.8 V enable voltage, the AWL5911 reduces system power consumption by offering a low leakage current while the amplifier is shut down. The detector facilitates accurate power control (+/ 0.5 db) over varying load conditions (3:1 VSWR). No external circuits are required for RF impedance matching, thus reducing component costs and making it easy to incorporate the device into new designs. 5 GHz RFIN PA_EN VCC1 VCC2 VCC3 Matching Network Bias Control Matching Network DET 5 GHz RFOUT The AWL5911 is manufactured using an advanced InGaP HBT technology that offers stateoftheart reliability, temperature stability and ruggedness. It is offered in a 4 x 4 x 0.80 mm surface mount package optimized for a 50 Ω system. VDET Figure 2: Functional Block Diagram
2 Table 1: Pin Description PIN NAME DESCRIPTION 1 Ground. Not Connected internally. 2 Ground 3 RFIN Power Amplifier RF input 4 Ground 5 PA_EN PA Enable Pin 6, 7 Ground. Not Connected internally. 8 Ground. Not Connected internally. 9 Ground. Not Connected internally. 10 DET Analog Power Detector Output 11, 12 Ground 13 RFOUT Power Amplifier RF output Ground 18 VCC3 Third Stage Supply Voltage 19 VCC2 Second Stage Supply Voltage 20 VCC1 First Stage Supply Voltage 2 PRELIMINARY DATA SHEET Rev 1.3
3 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT COMMENTS DC Power Supply +6.0 V PA_EN Voltage V RFIN, 5 GHz PA +10 dbm CW, 50 Ohm output load Operating Ambient Temperature C Storage Temperature C Storage Humidity 60 % Junction Temperature 150 C ESDHBM 1000 V JEDEC JESD22A114 all pins MSL Rating MSL1 Functional operation to the specified performance is not implied under these conditions. Operation of any single parameter in excess of the absolute ratings may cause permanent damage. No damage occurs if one parameter is set at the limit while all other parameters are set within normal operating ranges. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency Ranges GHz a/n/ac DC Power Supply Voltage (VCC) V With RF applied Quiescent Current 185 ma No RF Leakage Current 15 µa PA_EN Current µa PA_EN Voltage V Control Voltage High PA_EN Voltage V Control Voltage Low Operating Temperature C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 3 PRELIMINARY DATA SHEET Rev 1.3
4 Table 4: Electrical Specifications 5 V Operation (TC = +25 C, VCC = +5.0 V, PA_EN = 1.8 V) ac MCS9HT80, unless otherwise noted PARAMETER MIN TYP MAX UNIT COMMENTS Frequency GHz (1) dbm 35 db EVM, ac, MCS9 HT80 Output Power 26 dbm n, MCS0 HT20 Supply Current (ICC) 290 ma POUT = +22 dbm, MCS9HT80 Power Gain 33 db Gain variation over band +/ 1.5 db Gain variation over 80 MHz +/ 0.25 db Gain at 3.8 GHz 0 db 1 db output compression point 28 dbm PIN = CW Input Return Loss 5 db Output Spurious Levels Harmonics 2 fo 3 fo dbm/ MHz For Power levels up to 26 dbm OFDM Rise/Fall Time 0.5 µs Within 0.5 db of final value Thermal Resistance 28 C/W POUT = 27 dbm, 100% duty cycle Stability Ruggedness Notes: (1) POUT degraded from GHz. All nonharmonically related outputs < 50 dbc/100 khz No damage POUT = +26 dbm, VCC = 5 V, VSWR = 6:1, all phases, CW PIN = +5 dbm, VCC = 5 V, VSWR = 6:1, all phases, CW 4 PRELIMINARY DATA SHEET Rev 1.3
5 Table 5: Electrical Specifications 5 GHz TX Mode Power Detector (TC = +25 C, VCC = +5.0 V, PA_EN = 1.8 V) ac MCS9HT80, unless otherwise noted PARAMETER MIN TYP MAX UNIT COMMENTS Detector Voltage mv POUT = 0 dbm POUT = 14 dbm POUT = 20 dbm POUT = 23 dbm Total Internal Load Impedance 20 kω Off State Output Impedance 100 Ω On State Load Accuracy +/ 0.5 db Detector Bandwidth 10 MHz Ouput Power variation at 3:1 VSWR all phases Can be adjusted lower with external R and shunt C components ON Sequence OFF Sequence VCC PA_EN RFIN T_0N = 0 T_0N+1uS T_0FF 1uS T_0FF = 0 Referenced After 90% of Rise Time Referenced Before 10% of Fall Time Figure 3: Recommended Timing Diagram 5 PRELIMINARY DATA SHEET Rev 1.3
6 C7 0.01uF C1 (2) 4.7pF C2 0.01uF VCC C8 (1) 10uF 0805 C4 10pF C3 0.01uF (2) U1 1 1 VCC1 VCC2 VCC RFIN RF_IN AWL5911 RFOUT PA_EN PA_EN PA_EN RF_OUT DET J1 J2 45 R1 DNI (5) VDET R2 10K (6) C5 10pF VDET Notes: (1) Capacitor C8 is included on the evaluation board but can be eliminated if sufficient bypassing already exists on the customer s board. (2) Capacitors C1 & C4 should be placed closer to the AWL5911 power amplifier. (3) Unless otherwise stated, all components are of 0402 size. (4) All RFports are 50 Ω matched with internal DC blocks. (5) Optional R1 (470 Ohm) is not currently supported on the evaluation board layout but can be used to change the detector bandwidth. Other options include replacing R1 with a 0 Ohm jumper or adding a series element for the flexiibility of a low pass filter. (6) Since the ADC acts as a high impedance, the external shunt R2 may not be required. (7) If not in use, the VDET pin should be terminated with a 10K resistor and 100pF capacitor. Figure 4: Application Schematic 6 PRELIMINARY DATA SHEET Rev 1.3
7 J1 J2 C7 C1 C2 C4 C3 C8 C5 R2 Figure 5: AWL5911 Evaluation Board Figure 6: PCB Layout Table 6: Evaluation Board Bill of Materials REF DESIGNATION VALUE SIZE VENDOR PART NUMBER DESCRIPTION Std. Printed Ckts. AWL5911_APPS PCB A1 QFN 4x4mm ANADIGICS AWL5911 C1 4.7pF 0402 C2, C3, C7 0.01uF 0402 C4, C5 10pF 0402 Johanson Tech. DigiKey Murata DigiKey Panasonic DigiKey 500R07S4R7BV4T ND GRM155R71E103KA01D ND ECJ0EC1H100D PCC100CQCTND +22 dbm ac PA Capacitor Capacitor Capacitor C8 10uF 0805 AVX TPSA106K010R1800 Capacitor P1 7 Pins J1, J2 MillMax DigiKey Johnson DigiKey PBC36SFAN S1211E36ND J658ND DC Connector Header SMA Connector R2 10K 0402 IMS RCI J Resistor 7 PRELIMINARY DATA SHEET Rev 1.3
8 PACKAGE OUTLINE Figure 7: Package Outline 20 Pin, 4 x 4 x 0.80 mm QFN Pin 1 Identifier Date Code YY=Year; WW=Work week AWL5911 LLLLLNN YYWWCC Part Number Lot Number Country Code (CC) Figure 8: Branding Specification 8 PRELIMINARY DATA SHEET Rev 1.3
9 PIN 1 USER DIRECTION OF FEED Figure 9: Carrier Tape Figure 10: Reel 9 PRELIMINARY DATA SHEET Rev 1.3
10 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE AWL5911P7 40 C to +85 C AWL5911P8 40 C to +85 C AWL5911P9 40 C to +85 C PACKAGE DESCRIPTION 20 pin, 4 x 4 x 0.80 mm Surface Mount Module 20 pin, 4 x 4 x 0.80 mm Surface Mount Module 20 pin, 4 x 4 x 0.80 mm Surface Mount Module COMPONENT PACKAGING Bags 2500 piece T/R Partial Reel EVB C to +85 C Evaluation Board Evaluation Board ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) Fax: +1 (908) URL: IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 10 PRELIMINARY DATA SHEET Rev 1.3
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More informationFeatures. = +25 C, Vcc = +5V. Parameter Min. Typ. Max. Units Frequency Range GHz Power Output 3 dbm SSB Phase 10 khz Offset -60 dbc/hz
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DATA SHEET SKY65174-21: 2.4 to 2.5 GHz WLAN Power Amplifier Module Applications IEEE 82.11 b/g/n WLAN systems ISM band transmitters Wireless access points, routers, gateways Features PA linear output power:
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Product Overview The Qorvo is an integrated front end module (FEM) designed for Wi-Fi 802.11ax systems. The compact form factor and integrated matching minimizes layout area in the application. Performance
More informationFeatures. = +25 C, Vcc(RF), Vcc(DIG) = +5V
& DIVIDE-BY-16, 23. - 26. GHz Typical Applications The HMC739LP4(E) is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios / LMDS VSAT Features Pout: + dbm Phase Noise: -93 dbc/hz @ 100 khz Typ.
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TQP Functional Block Diagram N/C RF In N/C Vref 1 2 3 4 Vc1 16 N/C 5 6 N/C N/C Product Description 15 Bias controller Vc2 14 Vc3 13 7 8 N/C Vdet_out 12 N/C 11 RF Out 1 N/C 9 N/C The TQP is a high performance,
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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Typical Applications Low noise wideband
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More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Data Sheet FEATURES Fixed gain of 22.2 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 4. dbm at 9 MHz P1dB
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More informationData Sheet. MGA ( ) GHz 29dBm High Linearity Wireless Data Power Amplifier. Features. Description. Component Image.
MGA-43228 (2.3 2.5) GHz 29dBm High Linearity Wireless Data Power Amplifier Data Sheet Description Avago Technologies MGA-43228 is a power amplifier for use in the (2.3-2.5)GHz band. High linear output
More informationTypical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features OIP3 = 41.0 dbm @ 1900 MHz Gain = 15.5 db @ 1900 MHz Output P1 db = 25.5 dbm @ 1900 MHz 50 Ω Cascadable Lead-free/RoHS-compliant SOT-89 SMT package Product Description BeRex s BT09VG is
More informationRF5623 SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER
Single 5.0V, 3.3 to 3.8 GHz Linear Power Amplifier SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features High Gain; 32dB 2.5% EVM (RMS) at 26dBm, 5.0V Integrated
More informationFeatures. = +25 C, Vcc = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2
Typical Applications Low noise MMIC VCO w/half Frequency, for: VSAT Radio Point to Point/Multi-Point Radio Test Equipment & Industrial Controls Military End-Use Functional Diagram Features Dual Output:
More informationSE5023L: 5 GHz, +26 dbm Power Amplifier with Power Detector
DATA SHEET SE5023L: 5 GHz, +26 Power Amplifier with Power Detector Applications DSSS 5 GHz WLAN (IEEE 802.11ac) DSSS 5 GHz WLAN (IEEE 802.11n) Access points, PCMCIA, PC cards Features 5 GHz matched +24
More informationH/L Lin. Bias, Enable, Detector Circuits. Note: The TXIN has a DC short to ground. An external blocking capacitor is recommended at the TXIN port.
Applications 5 GHz WLAN (IEEE802.11a/g/n) Access Points, PCMCIA, PC cards Features 5GHz Front End Module with PA, LNA and T/R Switch Integrated power amplifier enable pin (VEN) Buffered, temperature compensated
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More informationSKY : 3400 to 3800 MHz High-Efficiency 4 W Power Amplifier
DATA SHEET SKY66293-21: 34 to 38 MHz High-Efficiency 4 W Power Amplifier Applications VCC1 VBIAS PAEN VCC3 Citizen's Broadband Radio Service (CBRS) application FDD and TDD 2G/3G/4G LTE systems Active Bias
More informationTypical Performance 1. IS-95C ACPR dbm WCDMA ACLR dbm
Device Features OIP3 = 45.0 dbm @ 1900 MHz Gain = 15.0 db @ 1900 MHz Output P1 db = 27.5 dbm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protection Circuit Lead-free/RoHS-compliant SOT-89 SMT package
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DATA SHEET RFX8053: CMOS 5 GHz WLAN 802.11ac RFeIC with PA, LNA, and SPDT Applications 802.11a/n/ac WiFi devices Smartphones Tablets/MIDs Gaming Consumer electronics Notebooks/netbooks/ultrabooks Mobile/portable
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Data Sheet FEATURES Fixed gain of 18.4 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 38.8 dbm at 9 MHz P1dB
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More information10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114
9 13 16 FEATURES High saturated output power (PSAT): 41.5 dbm typical High small signal gain: db typical High power gain for saturated output power:.5 db typical Bandwidth: 2.7 GHz to 3.8 GHz High power
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DATA SHEET SKY668-11: 515 to 5925 MHz High-Efficiency 4 W Power Amplifier Applications VCC1 VBIAS PAEN VCC3 LTE small cell applications for Band 46 LTE advanced for unlicensed spectrum, LAA, and LTE-U
More information400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324
Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:.
More informationApplications. Product Description. Features. Ordering Information. Functional Block Diagram
Applications DSSS 5 GHz WLAN (IEEE802.11a) Access Points, PCMCIA, PC cards Features High output power amplifier 19.5dBm Only 1 external component required Integrated power amplifier enable pin (VEN) Buffered,
More informationFeatures. = +25 C, Vcc = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2
v4.11 HMC5LP5 / 5LP5E OUTPUT 7.3 -.2 GHz Typical Applications Low noise MMIC VCO w/half Frequency, for: VSAT Radio Point to Point/Multi-Point Radio Test Equipment & Industrial Controls Military End-Use
More informationH/L Lin. Bias, Enable, Detector Circuits. Match & Filter. TXIN and ANT are DC Blocked. However external blocking cap is recommended for RX output.
Applications 5 GHz WLAN (IEEE802.11a/g/n) Access Points, PCMCIA, PC cards, Handhelds Features 5GHz Front End Module with PA, LNA and T/R Switch Integrated power amplifier enable pin (VEN) Buffered, temperature
More informationSZM-5066Z 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER
5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER Package Style: QFN, 40-Pin, 6mm x 6mm Features Single Supply Voltage 5.0V 8dB Typical Gain Across Band P OUT = 25dBm
More informationSKY : 3400 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier
DATA SHEET SKY66313-11: 3400 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier Applications FDD and TDD 4G LTE and 5G systems Supports 3GPP Bands N78, B22, and B42 Driver amplifier
More informationFeatures. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features
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5.0V, 2.4GHz to 2.7GHz High Power Amplifier RF5652 5.0V, 2.4GHz TO 2.7GHz HIGH POWER AMPLIFIER Package: QFN, 32-Pin, 5mmx5mmx0.85mm 32 31 30 29 28 27 26 VBIAS VCC1 VCC2 25 1 24 Features High Gain = 34dB
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