ALT6702 HELP4 TM UMTS PCS (Band 2) LTE/WCDMA/CDMA Multi-Mode PAM Data Sheet - Rev 2.1

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1 FEATURES MixedMode HSPA, EVDO, LTE Compliant 4th Generation HELP TM technology High Efficiency (R99 waveform): 39 POUT = +2.6 dbm 3 POUT = +17. dbm 23 POUT = +13. dbm 26 POUT = +9 dbm 13 POUT = +3. dbm Low Quiescent Current: 2 ma Low Leakage Current in Shutdown Mode: < µa Internal Voltage Regulator Integrated daisy chainable directional coupler with CPLIN and CPLOUT port Internal DC blocks on RF IN/OUT ports Optimized for a Ω System Control Logic RoHS Compliant Package, 26 o C MSL3 APPLICATIONS Band 2 WCDMA/HSPA Wireless Devices Band 2 LTE Wireless Devices Band Class 1 and 14 CDMA/EVDO Wireless Devices Band 2 LTE Devices ALT672 HELP4 TM UMTS PCS (Band 2) LTE/WCDMA/CDMA MultiMode PAM Data Sheet Rev 2.1 ALT672 M4 Package Pin 3 mm x 3 mm x 1 mm Surface Mount Module mode with low leakage current increase handset talk and standby time. A daisy chainable directional coupler is integrated in the module, thus eliminating the need of an external coupler. The selfcontained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a Ω system. VBATT 1 GND at Slug (pad) VCC PRODUCT DESCRIPTION The ALT672 HELP4 TM PA is a 4th generation HELP TM product for LTE and WCDMA devices operating in UMTS PCS (Band 2) and for CDMA devices operating in Band Class 1 and Band Class 14. This PA incorporates ANADIGICS HELP4 TM technology to deliver exceptional efficiency at low power levels and low quiescent current without the need for external voltage regulators or converters. The device is manufactured using advanced InGaP Plus TM HBT technology offering stateoftheart reliability, temperature stability, and ruggedness. Three selectable bias modes that optimize efficiency for different output power levels and a shutdown RFIN VMODE2 VMODE1 VEN Bias Control Voltage Regulation CPL Figure 1: Block Diagram RFOUT CPLIN GND CPLOUT

2 VBATT 1 GND VCC RFIN 2 9 RFOUT VMODE2 3 CPLIN VMODE1 4 7 GND VEN 6 CPLOUT Figure 2: Pinout (Xray Top View) Table 1: Pin Description PIN NAME DESCRIPTION 1 VBATT Battery Voltage 2 RFIN RF Input 3 VMODE2 Mode Control Voltage 2 4 VMODE1 Mode Control Voltage 1 VEN PA Enable Voltage 6 CPLOUT Coupler Output 7 GND Ground CPLIN Coupler Input 9 RFOUT RF Output 1CC Supply Voltage 2 Data Sheet Rev 2.1

3 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) + V Battery Voltage (VBATT) +6 V Control Voltages (VMODE1, VMODE2, VEN) +3. V RF Input Power (PIN) + dbm Storage Temperature (TSTG) 4 + C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency (f) MHz Supply Voltage (VCC) V POUT < +2.6 dbm Enable Voltage (VEN) V PA "on" PA "shut down" Mode Control Voltage (VMODE1,VMODE2) V Low Bias Mode High Bias Mode WCDMAOutput Power (UMTS) R99, HPM HSPA (MPR=), HPM LTE R99, MPM LTE & HSPA (MPR=), MPM R99, LPM LTE & HSPA (MPR=), LPM 2.1 (1) 27.1 (1) 26.9 (1) dbm 3GPP TS , Rel Table C for WCDMA, SUBTEST 1 TS 36.1 Rel for LTE CDMA Output Power IS9, HPM IS9, MPM IS9, LPM 27. (1) dbm CDMA2, RC1 Case Temperature (TC) +9 C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1)For Operation at 3.2 V, POUT is derated by. db. Data Sheet Rev 2.1 3

4 Table 4: Electrical Specifications LTE Operation = MHz QPSK 12 RB (Start = ) (TC = +2 C, VBATT = VCC = +3.4 V, VENABLE = +, Ω system) PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE1 VMODE 2 Gain db POUT = dbm ACLR EUTRA at MHz offset POUT = dbm ACLR UTRA at + 7. MHz offset POUT = dbm ACLR UTRA at MHz offset POUT = dbm PowerAdded Efficiency % POUT = dbm Ouiescent Current (Icq) Low Bias Mode 2 3. ma through VCC pin Mode Control Current..1 ma through VMODE pins, VMODE1,2 = + Enable Current.4.1 ma through VEN pin, VEN = + BATT Current. 1. ma through VBATT pin, VMODE1,2 = + Leakage Current < A VBATT = +4.2 V, VCC = +4.2 V, VEN =, VMODE1,2 = Noise Power dbm/hz 19 MHz to 199 MHz GPS Band ISM Band Harmonics 2fo 3fo, 4fo POUT dbm Coupling Factor 2 db Directivity 2 db Coupler In_Out Daisy Chain Insertion Loss Spurious Output Level (all spurious outputs) <.2 db <7 69 Mhz to 262 MHz Pin to 9, Shutdown Mode POUT < dbm Inband load VSWR < :1 Outofband load VSWR < :1 Applies over all operating ranges Load mismatch stress with no permanent degradation or failure Notes: 1. ACLR and Efficiency are measured at 1 MHz. 4 Data Sheet Rev 2.1 :1 VSWR Applies over full operating range

5 Table : Electrical Specifications WCDMA Operation (R99 waveform) (TC = +2 C, VCC = +3.4 V, VBATT = +3.4 V, VEN = +, Ω system) PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE1 VMODE2 Gain db POUT= +2.6 dbm POUT= +17. dbm POUT= +9 dbm ACLR1 at MHz offset POUT= +2.6 dbm POUT= +17. dbm POUT= +9 dbm ACLR2 at MHz offset POUT= +2.6 dbm POUT= +17. dbm POUT= +9 dbm PowerAdded Efficiency % POUT= +2.6 dbm POUT= +17. dbm POUT= +13. dbm POUT= +9 dbm POUT= +3. dbm Spurious Output Level (all spurious outputs) 7 POUT < +2.6 dbm Inband load VSWR < :1 Outofband load VSWR < :1 Applies over all operating conditions Load mismatch stress with no permanent degradation or failure :1 VSWR Applies over full operating range Data Sheet Rev 2.1

6 Table 6: Electrical Specifications CDMA Operation (CDMA2, RC1) (TC = +2 C, VBATT = VCC = +3.4 V, VENABLE = +, Ω system) PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE1 VMODE2 Gain db POUT = +2 dbm Adjacent Channel Power at +1.2 MHz offset Primary Channel BW 1.23 MHz Adjacent Channel BW = khz POUT = +2 dbm Adjacent Channel Power at +1.9 MHz Primary Channel BW=1.23 MHz Adjacent Channel BW= khz 6 <6 < POUT = +2 dbm PowerAdded Efficiency % POUT = +2 dbm Spurious Output Level (all spurious outputs) 7 POUT < +2 dbm, InBand VSWR <:1, OutOfBand VSWR <:1 Applies to all operating conditions Load mismatch stress with no permanent degradation or failure :1 VSWR Applies over full operating range 6 Data Sheet Rev 2.1

7 PERFORMANCE DATA PLOTS: (LTE Operation at 1 MHz and system) 2 2 Figure 4: LTE Gain (db) over Temperature (VBATT = VCC = +3.4 V) C 3.4Vcc 2C 3.4Vcc 9C 3.4Vcc 2 2 Figure : LTE Gain (db) over Voltage (TC(Tc=2C = C) 2C 3.2Vcc 2C 3.4Vcc 2C 4.2Vcc Gain (db) 1 Gain (db) Figure 6: LTE PAE (%) over Temperature (VBATT = VCC = +3.4 V) (Vbatt=VCC=3.4V) 4 Figure 7: LTE PAE (%) over Voltage (TC = 2 C) (Tc=2C) 3 3.4cc 2C 3.4Vcc 9C 3.4Vcc 4 3 2C 3.2Vcc 2C 3.4Vcc 2C 4.2Vcc Efficiency (%) Efficiency (%) ACLR1 (MHz ) Figure : Figure LTE : ACLR1 LTE ACRL1 () () over Temperature (VBATT (Vbatt=VCC=3.4V) = VCC = +3.4 V) 2 C 3.4Vcc 2 2C 3.4Vcc 9C 3.4Vcc ACLR1 (MHz ) 2 Figure 9: LTE ACLR1 () over Voltage Figure 9: LTE ACLR1 () over Voltage (TC(Tc=2C) = C) 2 2C 3.2Vcc 2C 3.4Vcc 2C 4.2Vcc Data Sheet Rev 2.1 7

8 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VEN, VMODE1 and VMODE2 voltages. Bias Modes The power amplifier may be placed in either Low, Medium or High Bias modes by applying the appropriate logic level (see Operating Ranges table) to the VMODE pins. The Bias Control table below lists the recommended modes of operation for various applications. Three operating modes are recommended to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dbm. At ~17dBm 6 dbm, the PA could be switched to Medium Power Mode. For POUT levels < ~ dbm, the PA could be switched to Low Power Mode for extremely low current consumption. APPLICATION POUT LEVELS Table 7: Bias Control BIAS MODE VEN VMODE1 VMODE2 VCC VBATT Low power (Low Bias Mode) < +9 dbm Low V > 3.2 V Med power (Medium Bias Mode) High power (High Bias Mode) > dbm < +17 dbm Low V > 3.2 V > +16 dbm High V > 3.2 V Shutdown Shutdown V > 3.2 V VBATT VCC RFIN VMODE2 VMODE1 C 2.2 µf C1.1µF GND at slug 1 VBATT VCC 2 RFIN RFOUT 9 3 VMODE2 4 VMODE1 CPLIN GND 7 C3 33pF CPLIN C2.1µF C4 2.2µF ceramic RFOUT VEN VEN CPLOUT 6 CPLOUT Figure 3: Evaluation Board Schematic Data Sheet Rev 2.1

9 PACKAGE OUTLINE Figure 4: M4 Package Outline Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Date Code YY= Year WW= Work Week 672R LLLLNN YYWWCC Part Number Lot Number Country Code(CC) Figure : Branding Specification M4 Package Data Sheet Rev 2.1 9

10 COMPONENT PACKAGING Pin 1 Figure 6: Tape & Reel Packaging Table : Tape & Reel Dimensions PACKAGE TYPE TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA 3 mm x 3 mm x 1 mm 12 mm 4 mm 2 7" Data Sheet Rev 2.1

11 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING ALT672RM4Q7 o C to +9 o C RoHS Compliant Pin 3 mm x 3 mm x 1 mm Surface Mount Module Tape and Reel, 2 pieces per Reel ALT672RM4P9 o C to +9 o C RoHS Compliant Pin 3 mm x 3 mm x 1 mm Surface Mount Module Partial Tape and Reel ANADIGICS 141 Mount Bethel Road Warren, New Jersey 79, U.S.A. Tel: +1 (9) 66 Fax: +1 (9) URL: IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 11 Data Sheet Rev 2.1