Data Sheet. MGA GHz 3x3mm WiMAX/WiBro and WiFi Linear Amplifier Module. Description. Features. Applications. Functional Block Diagram

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1 MGA GHz 3x3mm WiMAX/WiBro and WiFi Linear Amplifier Module Data Sheet Description Avago Technologies MGA-223 linear power amplifier is designed for mobile and fixed wireless data applications in the 2.3 to 2.7 GHz frequency range. The PA is optimized for IEEE WiMAX/WiBro modulation but can be used for any high linearity applications. The PA exhibits flat gain and good match while providing linear power efficiency to meet stringent mask conditions. It utilizes Avago Technologies proprietary GaAs Enhancement-mode phemt technology for superior performance across voltage and temperature levels. The MGA-223 is packaged in a 3x3x1 mm package for space-constrained applications. Applications Portable WiMAX/WiBro and WiFi applications WiMAX/WiBro and WiFi Access points Functional Block Diagram RFIN 1 16 VCC VCC Features Advanced GaAs E-pHEMT 5 Ω all RF ports db gain step in low power mode with Idsq reduction Integrated CMOS compatible pins for shutdown and low power mode 3 to 5V supply Adjustable bias current with BCTRL pin ESD protection all ports above V HBM Small size: 3 x 3 x 1 mm Stable under all loads or conditions C to +85 C operation At (BCTRL = 2.8V) Gain of 35dB PAE of 19% at SEM compliant Pout = Meets masks at 25 dbm Pout, 16QAM WiMAX with 3.3V and 512mA 16QAM WiMAX EVM < -32dB (2.5%) at Low power Idd, 8mA at Pout = dbm, db Gain Step Package Diagram 2 ISMN OMN RFOUT 11 VCC1 VCC BCTRL 4 BIAS NETWORK N/C 9 RFIN BCTRL RFOUT NC BSPLY 5 BSW PMOD 6 7 N/C 8 5 BSPLY BSW PAMOD NC

2 ELECTRICAL SPECIFICATIONS Absolute Minimum and Maximum Ratings Table 1. Minimum and Maximum Ratings Parameter ifications Description Pin Min. Typical Max. Unit Comments Supply Voltage VCC1 VCC V Bias Supply BSPLY V Bias Control BCTRL V Bias ON/OFF BSW V Mode Control PAMODE V RF Input Power RFIN 15 dbm Using 16QAM MSL MSL3 Channel Temperature 15 C Storage Temperature C ESD Human Body Model V Man Machine Model 5 V Table 2. Operating Range Parameter ifications Description Pin Min. Typical Max. Unit Comments Supply Voltage VCC V VCC2 Bias Supply BSPLY V 13 ma Bias Control BCTRL V.7 ua Bias ON/OFF BSW V 7 25 ua Mode Control PAMODE V ua RF Output Power RFOUT dbm Using 16QAM Frequency Range GHz Thermal Resistance, θ ch-b 23.4 C/W Channel to board Case Temperature +85 C 2

3 WiMAX (82.16e) Electrical ifications All data measured on an FR4 demo board at Vcc1 = Vcc2 = 3.3V, BCTRL = 2.8V, Tc = 25 C, 5 Ω at all ports. Unless otherwise specified, all data is taken with OFDM 16-QAM modulated signal per IEEE 82.16e with MHz BW operating over the BW of to. Table 3. RF Electrical Characteristics Parameter Performance Min. Typical Max. Unit Comments Input Return Loss - db Gain Flatness 1 db Over any MHz Gain Variation (V CC ) -1 1 db 3V to 5V High Power Mode EVM db Vcc=3.3V -34 Vcc=3.6V dbm/khz IBW=kHz dbm/mhz IBW=1MHz Pout (SEM Compliant) +25 dbm 82.16e Total DC Current ma Pout= 464 Pout= Gain db Low Power Mode EVM db Pout=dBm Gain Step 8 15 db Total DC Current 7 ma Pout=dBm P1dB 31 dbm CW Single Tone Psat 32 dbm CW Single Tone 2fo dbm/mhz fo dbm/mhz Settling Time.2.5 us Icc leakage current 4 ua Noise Power in Cell Band -142 dbm/hz Noise Power in GPS Band -133 dbm/hz Noise Power in PCS -137 dbm/hz 3

4 Selected performance plots EVM (db) EVM Frequency Sweep (Vcc=3. to 5.V) Tambient=25C and Pout= 3V 5V Frequency (MHz) Figure 1. EVM Frequency Sweep at 25C and Pout= over Vcc EVM (db) V EVM Frequency Sweep (Vcc=3. to 5.V) Tambient=25C and Pout=26dBm Frequency (MHz) Figure 2. EVM Frequency Sweep at 25C and Pout=26dBm over Vcc EVM (db) Figure 3. EVM Frequency Sweep at Vcc=3.3V and Pout= over Tambient EVM (db) EVM Frequency Sweep (Tambient=C to +85C) Vcc=3.3V and Pout= Frequency (MHz) C 25C +85C EVM Power Sweep (Freq=2.3 to ) Tambient=C and Vcc=3.3V Figure 5. EVM Power Sweep at Vcc=3.3V and C over Frequency EVM (db) EVM Power Sweep (Freq=2.3 to ) Tambient=25C and Vcc=3.3V Figure 4. EVM Power Sweep at Vcc=3.3V and 25C over Frequency EVM (db) EVM Power Sweep (Freq=2.3 to ) Tambient=+85C and Vcc=3.3V Figure 6. EVM Power Sweep at Vcc=3.3V and +85C over Frequency 4

5 Gain (db) V 5V Gain Frequency Sweep (Vcc=3. to 5.V) Tambient=25C and Pout= Frequency (MHz) Figure 7. Gain Frequency Sweep at 25C and Pout= over Vcc Gain (db) Gain Frequency Sweep (Tambient=C to +85C) Vcc=3.3V and Pout= C 25C +85C Frequency (MHz) Figure 8. Gain Frequency Sweep at Vcc=3.3V and Pout= over Tambient Gain (db) Gain Power Sweep (Freq=2.3 to ) Tambient=25C and Vcc=3.3V Figure 9. Gain Power Sweep at Vcc=3.3V and 25C over Pout Gain (db) Gain Power Sweep (Freq=2.3 to ) Tambient=C and Vcc=3.3V Figure. Gain Power Sweep at Vcc=3.3V and C over Pout Gain (db) Gain Power Sweep (Freq=2.3 to ) Tambient=+85C and Vcc=3.3V Figure 11. Gain Power Sweep at Vcc=3.3V and -+85C over Pout 5

6 Itotal (A) Figure 12. Total Current Frequency Sweep at 25C and Pout= over Vcc Itotal (A) Total Current Frequency Sweep (Vcc=3. to 5.V) Tambient=25C and Pout= 3V 5V Frequency (MHz) Total Current Power Sweep (Freq=2.3 to ) Tambient=25C and Vcc=3.3V Figure 14. Total Current Power Sweep at 3.3V and 25C over Frequency Itotal (A) Total Current Frequency Sweep (Tambient=C to +85C) Vcc=3.3V and Pout= Frequency (MHz) Figure 13. Total Current Frequency Sweep at 3.3V and Pout= over Tambient Itotal (A) C 25C +85C Total Current Power Sweep (Freq=2.3 to ) Tambient=C and Vcc=3.3V Figure 15. Total Current Power Sweep at 3.3V and C over Frequency Itotal (A) Total Current Power Sweep (Freq=2.3 to ) Tambient=+85C and Vcc=3.3V Figure 16. Total Current Power Sweep at 3.3V and +85C over Frequency 6

7 WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Pout=, Vcc=3.3V and Tambient=25C Figure 17. SEM Frequency Sweep at Vcc=3.3V and 25C (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Pout=, Vcc=3.6V and Tambient=25C Figure 18. SEM Frequency Sweep at Vcc=3.6V and 25C (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Pout=, Vcc=4.2V and Tambient=25C Figure 19. SEM Frequency Sweep at Vcc=4.2V and 25C (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Pout=, Freq= and Tambient=25C 3V 5V Figure 21. SEM at Vcc=3.3V, 25C and over Vcc (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Pout=, Freq= and Tambient=25C 3V 5V Figure 2.SEM at Vcc=3.3V, 25C and over Vcc (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Pout=, Freq= and Tambient=25C 3V 5V Figure 22. SEM at Vcc=3.3V, 25C and over Vcc (2dB Post-PA loss assumed) 7

8 WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Vcc=3.3V, Freq= and Tambient=C Figure 23. SEM at Vcc=3.3V, C and over Vcc (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Vcc=3.3V, Freq= and Tambient=C Figure 24. SEM at Vcc=3.3V, C and over Vcc (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Vcc=3.3V, Freq= and Tambient=C Figure 25. SEM at Vcc=3.3V, C and over Vcc (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Vcc=3.3V, Freq= and Tambient=25C Figure 27. SEM at Vcc=3.3V, 25C and over Vcc (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Vcc=3.3V, Freq= and Tambient=25C Figure 26.SEM at Vcc=3.3V, 25C and over Vcc (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Vcc=3.3V, Freq= and Tambient=25C Figure 28. SEM at Vcc=3.3V, 25C and over Vcc (2dB Post-PA loss assumed) 8

9 WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Vcc=3.3V, Freq= and Tambient=85C Figure 29. SEM at Vcc=3.3V, +85C and over Vcc (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Vcc=3.3V, Freq= and Tambient=85C Figure 3. SEM at Vcc=3.3V, +85C and over Vcc (2dB Post-PA loss assumed) WiMAX trum Emission Mask, 82.16e (16QAM 3/4) Vcc=3.3V, Freq= and Tambient=85C Figure 31. SEM at Vcc=3.3V, +85C and over Vcc (2dB Post-PA loss assumed) 9

10 Evaluation Board Description Table 4. Pin Description Top Pin No. Function 1 VCC2 3 B_SPLY 5 VCC1 7 NC 9 PAMOD 11 NC 13 NC 15 B_CTRL 17 NC 19 NC Bottom Pin No. Function 2 VCC2_S B_SW Recommended turn on sequence Apply VCC1 and VCC2 Apply BSPLY Apply BCTRL Apply BSW For HPM Apply PAMOD HI For LPM Apply PAMOD LO Apply RF Input not to exceed 15dBm Turn off in reverse order Typical Test Conditions: Pin HPM LPM VCC1,2 3.3V 3.3V Supply Voltage PAMOD 1.8V V Low Power Mode B_SPLY 3.3V 3.3V Bias Voltage B_CTRL 2.8V 2.8V Bias Control B_SW 1.8V 1.8V PA Enable Notes: VCC1, VCC2 and B_SPLY can be tied together to reduce supply voltages, but B_CTRL needs to be a regulated voltage which is optimized for 2.8V at Vcc of 3.3V. Other bias points are described under flexible BCTRL optimization section. Demoboard Top Pins Demoboard Bottom Pins

11 Application Circuit MGA-223 Vdd1 Vdd2 47uF.1uF uf uf pf pf RF In 1 RF In VCC VCC RF RF Out Out RF Out BCTRL.1uF pf pf 3 4 BCTRL 5 BSPLY 6 BSW 7 PAMOD NC NC NC pf pf BSPLY BSW PAMOD Using 3.3V or 5V Supply and connecting Vcc1, Vcc2, BSLPY and BCTRL Vbat R 1 Vcc1 Vcc2 BSPLY R 2 BCTRL Notes: BCTRL regulates the device current, thus R1 and R2 should have good tolerance rating. If available, a voltage regulator is the preferred method of bias. In this example we set R2 at MOhm and solve for R1 with simple voltage divider equation. Use high resistance values to limit leakage current. 3.3V Example : Given : 5.V Example : Given : V BCTRL = R 2 R 1 + R 2 *V BATT V BCTRL = 2.85V V BAT = 3.3V V BCTRL = R 2 R 1 + R 2 *V BATT V BCTRL = 2.85V V BAT = 5.V MΩ 2.85V = *3.3V R 1 + MΩ R 2 = M R 1 =? MΩ 2.85V = *5.V R 1 + MΩ R 2 = M R 1 =? R 1 R 2 = 1.58MΩ = MΩ R 1 R 2 = 7.54MΩ = MΩ 11

12 Flexible BCTRL Optimization BCTRL voltage on MGA-223 directly controls the bias current of the device. If the user requires lower current or perhaps higher power than the typical operation, then this can be accomplished by a simple BCTRL change. A more sophisticated use might include BCTRL as part of a closed loop system where software dynamically adjusts BCTRL depending on the output power required. Low Current Operation: 4mA at Pout with BCTRL = 1.8V and VCC = 3.3V Example 1 is very typical of mobile device application where ~4mA of current consumption is required. With the above settings at full power of, IDD drops from 5mA to 418mA with some trade-off in EVM but still meeting SEM. Idd [ma] Idd Frequency Sweep (BCTRL = 1.4 to 2.5V) Tambient = 25C and Pout = and Vbat = 3.3 1V4 1V6 1V8 2V 2V2 2V Frequency [MHz] Table 5. Low Current Biasing Optimal settings for BCTRL (2.3G - 2.7G) VCC = BSPLY = 3.3V Pout BCTRL Idd EVM 1.8V 418mA -27.9dB 1.7V 367mA -27.6dB 1.7V 33mA -27.dB Idsq x 94mA x Table 6. Typical Biasing Typical settings for BCTRL (2.3G - 2.7G) VCC = BSPLY = 3.3V Pout BCTRL Idd EVM 2.8V 51mA -32dB 2.8V 464mA -33dB 2.8V 435mA -35dB Idsq x 24mA x Hi Power Operation: 26dBm Pout with BCTRL = 2V and VCC = 5V Example 2 is more typical of CPE applications where current consumption is less important and higher power is required. With BCTRL at 2V and VCC at 5V MGA-223 is able to achieve higher than 26dBm Pout and still meet SEM. Generally as VCC increases SEM improves. EVM [db] EVM Frequency Sweep (Vcc = 3. to 5.V) Tambient = 25C and Pout = 26dBm 5V Frequency [MHz] 12

13 Land Pattern 3.±. 3.±. VCC1 VCC2 1.5±. VCC1 VCC2 1.6± ±. 1.5±. RFIN BCTRL RFOUT NC.2±..6±. 3.±. RFIN BCTRL RFOUT NC.±..55± BSPLY BSW PAMOD NC.±. Top view through package.3±..55±. BSPLY BSW PAMOD NC Top view through package.4±..65±. Figure 32. Recommended footprint Figure 33. Recommended soldermask opening 3.±. VCC1 VCC2 1.5± ±. 1.5±. RFIN BCTRL 4.15± BSPLY BSW PAMOD NC RFOUT 9 NC.3±..3±..2±..6±. Notes: 1. All units are in millimeters 2. package is symmetrical Top view through package Figure 34. Package dimensions 13

14 Ordering Information Size 12mm Part Number No. of Devices Container MGA-223-BLKG Antistatic Bag MGA-223-TR1G 3 13" Reel A B C min Tape and Reel Information W3 W2 D N W1 W2 W3 2.2min B.3±.5 ø ±.5 4.±. 3.4±. 5.5±.5 12.±.3 A N C 12 W1 ø ±. 1.7±. 8.±. ø1.5min 3.4±. 14

15 Handling and Storage tp T P RAMP UP CRITICAL ZONE T L TO T P TEMPERATURE T L Ts max Ts min t L ts PREHEAT RAMP DOWN 25 t 25 C TO PEAK TIME Profile Feature Sn-Pb Solder Pb-Free Solder Average ramp-up rate (TL to TP) 3 C/sec max 3 C/sec max Preheat Temperature Min (Tsmin) Temperature Max (Tsmax) Time (mon to max) (ts) C 15 C 6-12 sec C 15 C 6-18 sec Tsmax to TL Ramp-up Rate 3 C/sec max Time maintained above: Temperature (TL) Time (TL) 183 C 6-15 sec 217 C 6-15 sec Peak temperature (Tp) 24 +/-5 C 26 +/-5 C Time within 5 C of actual Peak Temperature (tp) sec sec Ramp-down Rate 6 C/sec max 6 C/sec max Time 25 C to Peak Temperature 6 min max 8 min max Typical SMT Reflow Profile for Maximum Temperature = 26+/-5 C For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 25 Avago Technologies. All rights reserved. AV2-1959EN - February 18, 2