Features. Specifications

Transcription

1 MGA W High Gain Driver Amplifier MHz Data Sheet Description Avago Technologies MGA is a 0.25W high gain with good gain flatness Driver Amplifier MMIC, housed in a standard SOT-89 plastic package. The device features high linearity performance, excellent input and output return loss, and low noise figure. The device can be easily matched to obtain optimum power and linearity. MGA is externally tunable to operate within 50MHz to 2GHz frequency range applications. With high IP3, low noise figure and wideband operation, the MGA can be utilized as a driver amplifier in the transmit chain and as a second stage LNA in the receive chain. This device uses Avago Technologies proprietary 0.25um GaAs Enhancement mode PHEMT process. Pin connections and Package Marking 11X #1 #2 #3 RFin GND RFout Top View #3 #2 #1 RFout GND RFin Bottom View Notes: Top View : Package marking provides orientation and identification 11 = Device Code X = Date Code character identifies month of manufacturing Features ROHS compliant Halogen free Very high linearity at low DC bias power [1] High Gain Good gain flatness Low noise figure Excellent uniformity in product specification SOT-89 standard package Specifications At, Vdd = 5V, Idd = 111mA OIP3 = 42dBm Noise Figure = 2.0dB Gain = 21dB; Gain Flatness (+/-50MHz) = 0.1dB P1dB = 24 dbm IRL = 15.6dB, ORL = 12.8dB Note: 1. The MGA has a superior LFOM of 14.5dB. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Vdd C C Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 100 V ESD Human Body Model = 0 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. RFin C Figure 1. Simplified Schematic diagram L C RFout

2 MGA Absolute Maximum Rating [1] T A = Symbol Parameter Units Absolute Maximum I d,max Drain Current ma 150 V d,max Device Voltage V 5.5 P d Power Dissipation [2] mw 825 P in,max CW RF Input Power dbm 25 T j,max Junction Temperature C 150 T stg Storage Temperature C -65 to 150 Thermal Resistance Thermal Resistance [3] (V d = 5.0V, T c = ) θ jc = 54.5 C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Board temperature (T c ) is, for T c > 105 C derate the device power at 18.3mW/ C rise in board temperature adjacent to package bottom. 3. Thermal resistance measured using Infrared measurement technique. MGA Electrical Specifications [1] T A =, V d = 5V, unless noted Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. I ds Quiescent current N/A ma NF Noise Figure 0.45GHz Gain Gain 0.45GHz OIP3 [2] Output Third Order Intercept Point 0.45GHz P1dB Output Power at 1dB Gain Compression 0.45GHz PAE Power Added Efficiency at P1dB 0.45GHz IRL Input Return Loss 0.45GHz ORL Output Return Loss 0.45GHz ISOL Isolation 0.45GHz db db 19 dbm 39.2 dbm 22.3 % db db db Notes: 1. Typical performance obtained from a test circuit described in Figure OIP3 test condition: F1 - F2 = 10MHz, with input power of -12dBm per tone measured at worst case side band

3 MGA Consistency Distribution Chart (1, 2) Figure MHz, Vdd = 5V, LSL=93mA, Nominal=111mA, USL=128mA Figure MHz, Vdd = 5V, Nominal=2dB, USL=2.6dB Figure MHz, Vdd = 5V, LSL=19dB, Nominal=21dB, USL=23dB Figure MHz, Vdd = 5V, LSL=39.2dBm, Nominal=42dBm Notes: 1. Data sample size is 3500 samples taken from 4 different wafers and 2 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. Measurements are made on production test board which represents a trade-off between optimal Gain, NF, OIP3 and OP1dB. Circuit losses have been de-embedded from actual measurements Figure MHz, Vdd = 5V, LSL=22.3dBm, Nominal=24dBm 3

4 MGA Application Circuit Data for 450MHz T A =, V d = 5.0V, I d = 111mA OIP3 (dbm) Figure 7. OIP3 vs Frequency and Temperature P1dB (dbm) Figure 8. P1dB vs Frequency and Temperature Gain (db) Figure 9. Gain vs Frequency and Temperature IRL (db) Figure 10. IRL vs Frequency and Temperature ORL (db) Figure 11. ORL vs Frequency and Temperature Isolation (db) Figure 12. Isolation vs Frequency and Temperature 4

5 MGA Application Circuit Data for 450MHz (continue) NF (db) Figure 13. Noise Figure vs Frequency and Temperature OIP3 (dbm) Pout (dbm) Figure 14. OIP3 vs Output Power and Temperature at 450MHz Idd (ma) Vdd (V) Figure 15. Current vs Voltage and Temperature 5

6 MGA Application Circuit Data for 900MHz T A =, V d = 5.0V, I d = 111mA OIP3 (dbm) Figure 16. OIP3 vs Frequency and Temperature P1dB (dbm) Figure 17. P1dB vs Frequency and Temperature Gain (db) IRL (db) Figure 18. Gain vs Frequency and Temperature Figure 19. IRL vs Frequency and Temperature ORL (db) Figure 20. ORL vs Frequency and Temperature Isolation (db) Figure 21. Isolation vs Frequency and Temperature 6

7 MGA Application Circuit Data for 900MHz (continue) NF (db) Figure 22. Noise Figure vs Frequency and Temperature OIP3 (dbm) Pout (dbm) Figure 23. OIP3 vs Output Power and Temperature at 900MHz Idd (ma) Vdd (V) Figure 24. Current vs Voltage and Temperature 7

8 MGA Application Circuit Data for 1500MHz T A =, V d = 5.0V, I d = 111mA OIP3 (dbm) Figure 25. OIP3 vs Frequency and Temperature P1dB (dbm) Figure 26. P1dB vs Frequency and Temperature Gain (db) Figure 27. Gain vs Frequency and Temperature IRL (db) Figure 28. IRL vs Frequency and Temperature ORL (db) Figure 29. ORL vs Frequency and Temperature Isolation (db) Figure 30. Isolation vs Frequency and Temperature 8

9 MGA Application Circuit Data for 1500MHz (continue) NF (db) Figure 31. Noise Figure vs Frequency and Temperature OIP3 (dbm) Pout (dbm) Figure 32. OIP3 vs Output Power and Temperature at 1500MHz Idd (ma) Vdd (V) Figure 33. Current vs Voltage and Temperature 9

10 2.2UF/15V UF/15V UF/15V 0805 Application Circuit Description and Layout Vdd GND VCTRL GND VSENSE VDD GND C3 C12 C11 C2 C10 C3 C2 IN C7 CTxx C1 L1 C8 OUT RFin 11X L1 RFout L3 C9 AVAGO TECHNOLOGIES L2 L4 C4 C5 C6 L3 C7 C9 C8 SOT-89 REV 3.2 Jul 2009 GND VSENSE VDD GND Figure 34. Circuit diagram Figure 35. Demoboard Bill of Materials Circuit Symbol Size Description For 0.45GHz (1) For (2) For (3) Value Manufacturer Value Manufacturer Value Manufacturer C µF Murata 0.1µF Murata 0.1µF Murata C µF Murata 2.2µF Murata 2.2µF Murata C pF Murata 100pF Murata 100pF Murata C pF Murata 39pF Murata 100pF Murata C pF Murata NA NA NA NA L nH Coilcraft 39nH Murata 12nH Murata L nH Coilcraft NA NA NA NA Note: NA not required in actual PCB design DC in RF in Input Matching Circuit 1. Γ_mag = 0.303, Γ_ang = Γ_mag = 0.071, Γ_ang = Γ_mag = 0.106, Γ_ang = X Output Matching Circuit 1. Γ_mag = 0.063, Γ_ang = Γ_mag = 0.039, Γ_ang = Γ_mag = 0.062, Γ_ang = RF out Figure 36. Input and output tuned Gamma location for 450MHz (1), 900MHz (2) and (3) MGA is an input and output prematched component. To bias MGA-31189, a +5V supply (Vdd) is connected to the output pin thru a RF choke, L1 (which isolates the inband signal from the DC supply). The bypass capacitors, C3 and C2 help to eliminate out of low band frequency signals from the power supply. Blocking capacitors are required for its input (C7) and output (C8), to isolate the supply voltage from succeeding circuits. To improve on input match at 450MHz, L3 and C9 are added. The L1, together with C8 also act as the output tuning circuitry. The recommended output tuning is for achieving best OIP3, while meeting typical specifications for other parameters. 10

11 MGA Typical Scatter Parameters (1) T A =, V d = 5.0V, I d = 111mA, Z o = 50W Freq GHz 11 S11 S11 S11 S21 S21 S21 S12 S12 S12 S22 S22 S22 Mag. Ang. db Mag. Ang. db Mag. Ang. db Mag. Ang. db K

12 MGA K-Factor (1) T A =, V d = 5.0V, I d = 111mA, Z o = 50W K freq, GHz MGA Typical Noise Parameters (1) T A =, V d = 5.0V, I d = 111mA, Z o = 50W Freq (GHz) F min (db) Γ opt Mag Γ opt Ga Ang R n /Z 0 (db) Note: 1. Measurements are made on 10mils Rogers RO4350 TRL Board. 12

13 Part Number Ordering Information Part Number No. of Devices Container MGA BLKG Tape/Reel MGA TR1G Tape/Reel SOT89 Package Dimensions D D1 D D1 POLISH E1 E OR E1 E L L S e1 e S e1 e C D D E OR 2.35 HALF ETCHING DEPTH b b1 MATTE FINISH b POLISH A b1 Dimensions in mm Dimensions in inches Symbols Minimum Nominal Maximum Minimum Nominal Maximum A L b b C D D D E E e S e

14 Device Orientation REEL CARRIER TAPE 11X 11X 11X 11X USER FEED DIRECTION COVER TAPE Tape Dimensions 0.30 ± ±.05 SEE NOTE SEE NOTE 1 Ø / Ø 1.50 MIN. A 1.75 ±.10 R 0.3 MAX ±.05 SEE NOTE 3 Bo 12.0 ±.3 Ko Ao R 0.3 TYP. A SECTION A - A Ao = 4.60 Bo = 4.90 Ko = 1.90 DIMENSIONS IN MM NOTES: SPROCKET HOLE PITCH CUMULATIVE TOLERANCE ± CAMBER IN COMPLIANCE WITH EIA POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED AS TRUE POSITION OF POCKET, NOT POCKET HOLE 14

15 Reel Dimensions 13 Reel R LOKREEL MINNEAPOLIS USA U.S PAT ATTENTION Electrostatic Sensitive Devices Safe Handling Required R REF REF 88 REF "A" PS Detail "B" 6 PS Detail "A" (MEASURED AT HUB) (MEASURED AT HUB) MAX. Ø 20.2 Dimensions in mm M IN Ø ± 0.5 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright Avago Technologies. All rights reserved. AV N - November 11, 2013