AWL /5 GHz a/b/g/n WLAN Power Amplifier Data Sheet - Rev 2.1

Transcription

1 FEATURES. % POUT = +1 dbm with IEEE 2.a 6 QAM OFDM at Mbps 2. % POUT = +2 dbm with IEEE 2.g 6 QAM OFDM at Mbps - dbr ACPR 1st Sidelobe, +21 dbm, with 2.b CCK/DSSS Root Cosine Filtering, 1 Mbps - dbr ACPR 2nd Sidelobe, +21 dbm, with 2.b CCK/DSSS Root Cosine Filtering, 1 Mbps db of Linear Power at 2. GHz 2 db of Linear Power at GHz Single +. V Supply Operational Voltage Range Extended to +. V Max Dual Temperature-Compensated Linear Power Detectors Ω - Matched RF Ports 1 kv ESD Rating (HBM) mm x mm x 1. mm Surface Mount Module AWL61 2./ GHz 2.a/b/g/n WLAN Power Amplifier AWL61 M22 Package Pin mm x mm x 1. mm Surface Mount Module APPLICATIONS 2.a/b/g/n WLAN: Notebooks, VoIP Handsets, PDA Mobile Phones PRODUCT DESCRIPTION The ANADIGICS AWL61 dual band power amplifier is a high performance InGaP HBT power amplifier module designed for transmit applications in the GHz and.-. GHz band. Matched to at all RF inputs and outputs, the part requires no additional RF matching components off-chip, making the AWL61 the world s simplest dual band PA module implementation available. The PA exhibits unparalleled linearity and efficiency for IEEE 2.g, 2.b and 2.a WLAN systems under the toughest signal configurations within these standards. The AWL61 is manufactured using advanced InGaP HBT technology that offers state-of-the-art reliability, temperature stability and ruggedness. 2. GHz RFIN Matching Network GND PA On/Off VCC Bias Control 2. GHz Power Detector Matching Network 2. GHz RFOUT The power detectors are temperature compensated on chip, enabling separate single-ended output voltages for each band with excellent accuracy over a wide range of operating temperatures. The PA is biased by a single +. V supply and consumes ultra-low current in the OFF mode. GHz RFIN Matching Network GND Bias Control PA On/Off VCC Matching Network GHz Power Detector GHz RFOUT Figure 1: Block Diagram and Pinout /2

2 Table 1: Pin Description PIN NAME DESCRIPTION 1 GND Ground 2 RFIN 2G RFIN G 2 GHz RF Input. ESD structures on this pin provide a DC path to ground. Avoid applying DC voltage to this pin. RF is internally matched to and AC coupled to the input stage. Route RF traces as coplanar waveguide using adjacent ground pins. GHz RF Input. AC coupled input stage internally matched to. Route as coplanar waveguide using adjacent ground pins. Although the input stage is AC coupled, a shunt inductive matching element included inside the PA provides a DC path to ground at this pin. GND Ground PAON G GHz Power Control. Power amplifier power control pin. The recommended use is for on/off control of the PA. Nominally, V applied will turn amplifier completely off; a voltage of 2. V and above will set the PA to maximum output capability. draw on this pin is approximately. ma at +. V. 6 GND Ground VCC G GHz Supply Voltage. Bias for power transistors of the GHz PA. DETOUT G RFOUT G 1 GND Ground GND Ground RFOUT 2G 1 DETOUT 2G GHz Power Detector Output. DC coupled power detector output. An emitter follower BJT supplies the output for this pin. Output impedance is 2 k. GHz RF Output. AC coupled output stage internally matched to. Route as coplanar waveguide using adjacent ground pins. Although the output stage is AC coupled, a shunt inductive matching element included inside the PA provides a DC path to ground at this pin. 2 GHz RF Output. ESD structures on this pin provide a DC path to ground. Avoid applying DC voltage to this pin. RF is internally matched to and AC coupled to the output stage. Route RF traces as coplanar waveguide using adjacent ground pins. 2 GHz Power Detector Output. DC coupled power detector output. An emitter follower BJT supplies the output for this pin. Output impedance is 2 k. 1 VCC 2G 2 GHz Power Supply. Bias for power transistors of the 2 GHz PA. 1 GND Ground PAON 2G 2 GHz Power Control. Power amplifier power control pin. The recommended use is for on/off control of the PA. Nominally, V applied will turn amplifier completely off; a voltage of 2. V and above will set the PA to maximum output capability. draw on this pin is approximately. ma at +. V. 2 /2

3 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT COMMENTS DC Power Supply (VCC 2G, VCC G) - +. V Power Control Voltage (PAON 2G, PAON G) - +. V No RF signal applied DC Consumption - ma Either PA powered separately RF Input Level (RFIN 2G, RF IN G) - - dbm Operating Case Temperature - + C Storage Temperature - +1 C ESD Tolerance 1 - V All pins, forward and reverse voltage. Human body model. Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table : Operating Ranges PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency (f) MHz 2.b/g 2.a DC Power Supply Voltage (VCC 2G, V CC G) V with RF applied Power Control Voltage (PAON 2G, PAON G) V PA "ON" PA "SHUTDOWN" Case Temperature (TC) C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. /2

4 Table : Electrical Specifications - 2. GHz Continuous Wave (TC = +2 C, VCC 2G = +. V, PAON 2G = +. V) PARAMETER MIN TYP MAX UNIT COMMENTS P1dB dbm Shutdown - 1 A PAON 2G = V Quiescent - 6 ma PAON 2G = +2. V, VCC 2G = +. V RF = off Harmonics 2fO fo dbm POUT 2G = +2 dbm, fo = 2. GHz, RBW = 1 MHz Input Return Loss db Output Return Loss db Reverse Isolation - - db Stability (Spurious) dbc 6:1 VSWR, at POUT = +2 dbm, - O C TON Setting Time S Settles within. db TOFF Setting Time S PAON 2G Pin Input Impedance k Measured with +. V applied to PAON 2G pin /2

5 Table : Electrical Specifications - GHz Continuous Wave (TC = +2 C, VCC G = +. V, PAON G = +. V) PARAMETER MIN TYP MAX UNIT COMMENTS P1dB dbm Shutdown - 1 A PAON G = V Quiescent ma PAON G = +2. V, VCC G = +. V RF = off Harmonics 2fO fo dbm POUT G = +2 dbm, fo =. GHz, RBW = 1 MHz Input Return Loss db Output Return Loss db Reverse Isolation - - db Stability (Spurious) dbc 6:1 VSWR, at POUT = +22 dbm; - O C TON Setting Time S Settles within. db TOFF Setting Time S PAON G Pin Input Impedance k Measured with +. V applied to PAON G pin /2

6 Table 6: Electrical Specifications - IEEE 2.g (TC = +2 C, VCC 2G = +. V, PAON 2G = +. V, 6 QAM OFDM Mbps) PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency 2-2 MHz Power 2 db Ripple -.2. db Across any 1 MHz band Error Vector Magnitude (EVM) (1) % db 2.g Mbps data rate POUT 2G = +2 dbm Consumption ma POUT 2G = +2 dbm Power Detector Voltage 6 mv POUT 2G = +2 dbm, Freq = 2. GHz Power Detector Output Load Impedance Note: (1) EVM includes system noise floor of 1% (- db) k Table : Electrical Specifications - IEEE 2.b (TC = +2 C, VCC 2G = +. V, PAON 2G = +. V, CCK/DSSS, 1 Mbps, Root Cosine Baseband Filtering, =.) PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency 2-2 MHz Power 2 db Ripple -.2. db Across any 1 MHz band Adjacent Channel Power (ACPR) 1st Sidelobe ( MHz Offset) Adjacent Channel Power (ACPR) 2nd Sidelobe ( 22 MHz Offset) dbc dbc 1 Mbps Root Cosine Baseband Filtering; POUT 2G = +21 dbm 1 Mbps Root Cosine Baseband Filtering; POUT 2G = +21 dbm Consumption ma POUT 2G = +21 dbm Power Detector Voltage 1 mv POUT 2G = +21 dbm, Freq = 2. GHz Power Detector Output Load Impedance k 6 /2

7 Table : Electrical Specifications - IEEE 2.a (TC = +2 C, VCC G = +. V, PAON G = +. V, 6 QAM OFDM Mbps) PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency - MHz Power 26 2 db. -. GHz Ripple db Across any 1 MHz band Error Vector Magnitude (EVM) (1) % db POUT G = +1 dbm,. -. GHz 2.a Mbps data rate Consumption ma POUT G = +1 dbm Power Detector Voltage 1 1 mv POUT G = +1 dbm, Freq =. GHz Power Detector Output Load Impedance k Notes: (1) EVM includes system noise floor of 1% (-db). /2

8 2.g PERFORMANCE DATA at VCC = +. V Figure 2: and ICC vs. Output Power Across Frequency (VCC = +. V, TC = +2 o C) 2.g Mbps OFDM Figure : EVM vs. Output Power Across Frequency (VCC = +. V, TC = 2 o C) 2.g Mbps OFDM (db) GHz 2. GHz 2. GHz Icc 2. GHz Icc 2. GHz Icc 2. GHz (ma) EVM (%) 1 6 EVM 2. GHz EVM 2. GHz EVM 2. GHz Figure : and ICC vs. Output Power Across Temp (Frequency = 2. GHz, VCC = +. V) 2.g Mbps OFDM Figure : EVM vs. Output Power Across Temp (Frequency = 2. GHz, VCC = +. V) 2.g Mbps OFDM (db) 2 2 -C 2C C Icc -C Icc 2C Icc C 2 2 (ma) EVM (%) 6 EVM -C EVM 2C EVM C (db) Figure 6: and ICC vs. Output Power Across Supply Voltage (Freq = 2. GHz, TC = 2 o C) 2.g Mbps OFDM V.V.V.6V.V.2V.V Icc 2.V Icc.V Icc.V Icc.6V Icc.V Icc.2V Icc.V (ma) EVM (%) Figure : EVM vs. Output Power Across Supply Voltage (Freq = 2. GHz, TC = 2 o C) 2.g Mbps OFDM EVM 2.V EVM.V EVM.V EVM.6V EVM.V EVM.2V EVM.V /2

9 Figure : Detector Voltage vs. Output Power Across Frequency (TC = 2 o C, VCC = +. V) 2.g Mbps OFDM Det. Volt. 2.GHz Det. Volt. 2.GHz Det. Volt. 2.GHz Figure : Detector Voltage vs. Output Power Across Temperature (Frequency = 2. GHz, VCC = +. V) 2.g Mbps OFDM Det. Volt. -C Det. Volt. 2C Det. Volt. C /2

10 2.b PERFORMANCE DATA at VCC = +. V Figure 1: and ICC vs. Output Power Across Frequency (VCC = +. V, TC = 2 o C) 2.b Root Cosine Filtering ( =.), 1Mbps Figure : ACPR 1st and 2nd Sidelobe vs. Output Power Across Frequency (VCC = +. V, TC= 2 o C) 2.b Root Cosine Filtering ( =.), 1Mbps (db) 2 2. GHz 2. GHz 2. GHz 2 Icc 2. GHz Icc 2. GHz Icc 2. GHz (ma) ACPR Sidelobe (dbc) st Sidelobe 2.GHz 1st Sidelobe 2.GHz -62 1st Sidelobe 2.GHz 2nd Sidelobe 2.GHz -66 2nd Sidelobe 2.GHz 2nd Sidelobe 2.GHz Figure : and ICC vs. Output Power Across Temp (Freq = 2. GHz, VCC = +. V) 2.b Root Cosine Filtering ( =.), 1Mbps (db) C 2C C Icc -C Icc 2C Icc C (ma) Figure 1: ACPR 1st and 2nd Sidelobe vs. Output Power Across Temp (Freq = 2. GHz, VCC = +. V) 2.b Root Cosine Filtering ( =.), 1Mbps ACPR Sidelobe (dbc) st Sidelobe -C 1st Sidelobe +2C 1st Sidelobe +C 2nd Sidelobe -C 2nd Sidelobe +2C 2nd Sidelobe +C Figure 1: and ICC vs. Output Power Across Power Supply Voltage (Freq = 2. GHz, TC=2 o C) 2.b Root Cosine Filtering ( =.), 1Mbps Figure 1: ACPR Sidelobe 1 vs. Output Power Across Power Supply Voltage (Freq = 2. GHz, TC = 2 o C) 2.b Root Cosine Filtering ( =.),1Mbps (db) V.V.V.6V.V.2V.V Icc 2.V Icc.V Icc.V Icc.6V Icc.V Icc.2V Icc.V (ma) ACPR Sidelobe 1 (dbc) V.V.V.6V.V.2V.V 1 /2

11 Figure : ACPR Sidelobe 2 vs. Output Power Across Power Supply Voltage (Freq = 2. GHz, TC= 2 o C) 2.b Root Cosine Filtering ( =.),1Mbps - Figure 1: Detector Voltage vs. Output Power Across Frequency (TC = 2 o C, VCC = +. V) 2.b Root Cosine Filtering ( =.), 1 Mbps ACPR 2nd Sidelobe (dbc) V -1.V.V -.6V -.V -.2V -.V Det. Volt. 2.GHz Det. Volt. 2.GHz Det. Volt. 2.GHz Figure 1: Detector Voltage vs. Output Power Across Temp (Frequency = 2. GHz, VCC = +.V) 2.b Root Cosine Filtering ( =.), 1 Mbps Det. Volt. -C Det. Volt. 2C Det. Volt. C /2

12 2.a PERFORMANCE DATA at VCC = +. V Figure 1: and ICC vs. Output Power Across Freq (VCC = +. V, TC = 2 o C) 2.a Mbps OFDM Figure 2: EVM vs. Output Power Across Freq (VCC = +. V, TC = 2 o C) 2.a Mbps OFDM (db) (ma) EVM (%) 6 EVM. GHz EVM.2 GHz EVM. GHz EVM. GHz. GHz.2 GHz. GHz. GHz Icc. GHz Icc.2 GHz Icc. GHz Icc. GHz Figure 21: and ICC vs. Output Power Across Temp (Freq =.2 GHz, VCC = +. V) 2.a Mbps OFDM Figure 22: EVM vs. Output Power Across Temp (Freq =.2 GHz, VCC = +. V) 2.a Mbps OFDM (db) 2 2 -C 2C C Icc -C Icc 2C Icc C 2 2 (ma) EVM (%) 6 EVM -C EVM 2C EVM C Figure 2: and ICC vs. Output Power Across Supply Voltage (Freq =.2 GHz, TC = 2 o C) 2.a Mbps OFDM Figure 2: EVM vs. Output Power Across Supply Voltage (Freq =.2 GHz, TC = 2 o C) 2.a Mbps OFDM EVM 2.V EVM.V (db) V.V.V.6V.V.2V.V Icc 2.V Icc.V Icc.V Icc.6V Icc.V Icc.2V Icc.V 2 2 EVM (%) EVM.V EVM.6V EVM.V EVM.2V 6 EVM.V /2

13 Figure 2: Detector Voltage vs. Output Power Across Frequency (TC = 2 o C, VCC = +. V) 2.a Mbps OFDM Det. Volt..GHz Det. Volt..2GHz Det. Volt..GHz Det. Volt..GHz Figure 26: Detector Voltage vs. Output Power Across Temp (Frequency =.2 GHz, VCC= +.V) 2.a Mbps OFDM Det. Volt. -C Det. Volt. 2C Det. Volt. C /2 1

14 2.g PERFORMANCE DATA at VCC = +.2 V Figure 2: and ICC vs. Output Power Across Frequency (VCC = +.2 V, TC = +2 o C) 2.g Mbps OFDM 1 Figure 2: EVM vs. Output Power Across Frequency (VCC = +.2 V, TC = 2 o C) 2.g Mbps OFDM (db) GHz 2. GHz 2. GHz Icc 2. GHz Icc 2. GHz Icc 2. GHz (ma) EVM (%) 6 EVM 2. GHz EVM 2. GHz EVM 2. GHz Figure 2: and ICC vs. Output Power Across Temp (Frequency = 2. GHz, VCC = +.2 V) 2.g Mbps OFDM Figure : EVM vs. Output Power Across Temp (Frequency = 2. GHz, VCC = +.2 V) 2.g Mbps OFDM 1 (db) C 2C C Icc -C Icc 2C Icc C (ma) EVM (%) 6 EVM -C EVM 2C EVM C Figure 1: Detector Voltage vs. Output Power Across Frequency (TC = 2 o C, VCC = +.2 V) 2.g Mbps OFDM Det. Volt. 2.GHz Det. Volt. 2.GHz Det. Volt. 2.GHz /2 Figure : Detector Voltage vs. Output Power Across Temperature (Frequency = 2. GHz, VCC = +.2 V) 2.g Mbps OFDM Det. Volt. -C Det. Volt. 2C Det. Volt. C

15 2.b PERFORMANCE DATA at VCC = +.2 V Figure : and ICC vs. Output Power Across Frequency (VCC = +.2 V, TC = 2 o C) 2.b Root Cosine Filtering ( =.), 1Mbps Figure : ACPR 1st and 2nd Sidelobe vs. Output Power Across Frequency (VCC = +.2 V,TC = 2 o C) 2.b Root Cosine Filtering ( =.), 1Mbps - - (db) GHz 2. GHz 2. GHz 2 Icc 2. GHz Icc 2. GHz Icc 2. GHz (ma) ACPR Sidelobe (dbc) st Sidelobe 2.GHz 1st Sidelobe 2.GHz -62 1st Sidelobe 2.GHz 2nd Sidelobe 2.GHz -66 2nd Sidelobe 2.GHz 2nd Sidelobe 2.GHz Figure : and ICC vs. Output Power Across Temp (Freq = 2. GHz, VCC = +.2 V) 2.b Root Cosine Filtering ( =.), 1Mbps Figure : ACPR 1st and 2nd Sidelobe vs. Output Power Across Temp (Freq = 2. GHz, VCC = +.2 V) 2.b Root Cosine Filtering ( =.), 1Mbps (db) C 2C C Icc -C Icc 2C Icc C (ma) ACPR Sidelobe (dbc) st Sidelobe -C 1st Sidelobe +2C 1st Sidelobe +C 2nd Sidelobe -C 2nd Sidelobe +2C 2nd Sidelobe +C Figure : Detector Voltage vs. Output Power Across Frequency (TC = 2 o C, VCC = +. V) 2.b Root Cosine Filtering ( =.), 1 Mbps Figure : Detector Voltage vs. Output Power Across Temp (Frequency = 2. GHz, VCC =+. V) 2.b Root Cosine Filtering ( =.), 1 Mbps Det. Volt. 2.GHz Det. Volt. 2.GHz Det. Volt. 2.GHz Det. Volt. -C Det. Volt. 2C Det. Volt. C /2 1

16 2.a PERFORMANCE DATA at VCC = +.2 V Figure : and ICC vs. Output Power Across Freq (VCC = +.2 V, TC = 2 o C) 2.a Mbps OFDM Figure : EVM vs. Output Power Across Freq (VCC = +.2 V, TC = 2 o C) 2.a Mbps OFDM EVM. GHz (db) 2 2 (ma) EVM (%) 6 EVM.2 GHz EVM. GHz EVM. GHz. GHz.2 GHz. GHz. GHz Icc. GHz Icc.2 GHz Icc. GHz Icc. GHz Figure 1: and ICC vs. Output Power Across Temp (Freq =.2 GHz, VCC = +.2 V) 2.a Mbps OFDM Figure 2: EVM vs. Output Power Across Temp (Freq =.2 GHz, VCC = +.2 V) 2.a Mbps OFDM 1 (db) C 2C C Icc -C Icc 2C Icc C (ma) EVM (%) 6 EVM -C EVM 2C EVM C Figure : Detector Voltage vs. Output Power Across Frequency (TC = 2 o C, VCC = +.2 V) 2.a Mbps OFDM Det. Volt..GHz Det. Volt..2GHz Det. Volt..GHz Det. Volt..GHz Figure : Detector Voltage vs. Output Power Across Temp (Frequency =.2 GHz, VCC=+.2 V) 2.a Mbps OFDM Det. Volt. -C Det. Volt. 2C Det. Volt. C /2

17 S-PARAMETER PERFORMANCE DATA at 2. GHz Figure : 2. GHz S21 Response (TC = 2 o C, VCC = +. V) Figure 6: 2. GHz S and S22 Response (TC = 2 o C, VCC = +. V) -2-2 S21 Mag (db) -6 S21 (db) S/S22 (db) S Mag (db) S22 Mag (db) Frequency (GHz) Frequency (GHz) Figure : 2. GHz S21 Response (TC = 2 o C, VCC = +.2 V) Figure : 2. GHz S and S22 Response (TC = 2 o C, VCC = +.2 V) 2 S21 Mag (db) S21 (db) 1-1 S/S22 (db) S Mag (db) S22 Mag (db) Frequency (GHz) Frequency (GHz) /2 1

18 S-PARAMETER PERFORMANCE DATA at GHz S21 (db) Figure : GHz S21 Response (TC = 2 o C, VCC = +. V) S21 Mag (db) S/S22 (db) Figure : GHz S and S22 Response (TC = 2 o C, VCC = +. V) S Mag (db) S22 Mag (db) Frequency (GHz) Frequency (GHz) S21 (db) Figure 1: GHz S21 Response (TC = 2 o C, VCC = +.2 V) S21 Mag (db) S/S22 (db) Figure 2: GHz S and S22 Response (TC = 2 o C, VCC = +.2 V) S Mag (db) S22 Mag (db) Frequency (GHz) Frequency (GHz) 1 /2

19 APPLICATION INFORMATION PAON 2G C1 1. F VCC DETOUT 2G 1 GND PAON 2G GND 1 VCC 2G 1 DETOUT 2G 1 RFOUT 2G 2. GHz RFOUT 2. GHz RFIN GHz RFIN 2 RFIN 2G RFIN G AWL61 GND GND 1 GND PAON G GND VCC G DETOUT G GHz RFOUT 6 RFOUT G VCC DETOUT G PAON G C2 1. F Figure : Application Circuit /2 1

20 PACKAGE OUTLINE Figure : M22 Package Outline - Pin mm x mm x 1. mm Surface Mount Module TOP BRAND Notes: 1. ANADIGICS LOGO SIZE: 1. mm HIGH 2. PART NUMBER (LINE 1): AWL61R. WAFER LOT NUMBER LLLL = LAST FOUR DIGITS OF LOT NUMBER (LINE 2) NN = TWO DIGIT WAFER NUMBER. PIN 1 INDICATOR: LASER DOT. ASSEMBLY INFO (LINE ): F = REV F YY = TWO DIGIT YEAR, WW = WORK WEEK COUNTRY CODE 6. TYPE = ARIAL CC - TH: THAILAND, TW = TAIWAN SIZE = POINT PH: PHILLIPPINES, CH: CHINA COLOR = LASER ID: INDONESIA, HK: HONG KONG US: UNITED STATES Figure : Branding Specification 2 /2

21 mil 1mil Solder Mask for Device Pins 1mil mil mil Solder Paste Mask (Quantity = ) Solder Mask for Device Ground Pad 2.6mil 1mil Via mil mil 2.6mil 2.6mil 2.6mil.6mil Figure 6: Recommended PCB Layout /2 21

22 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWL61RM22P - C to + C RoHS-compliant Pin mm x mm x 1. mm Surface Mount Module 2, piece Tape and Reel AWL61RM22P - C to + C RoHS-compliant Pin mm x mm x 1. mm Surface Mount Module 1- piece Tubes AWL61RM22P6 - C to + C RoHS-compliant Pin mm x mm x 1. mm Surface Mount Module 1- piece Tray EVA61RM22 - C to + C RoHS-compliant Pin mm x mm x 1. mm Surface Mount Module 1 piece Evaluation Board ANADIGICS, Inc. Mount Bethel Road Warren, New Jersey, U.S.A. Tel: +1 () 66- Fax: +1 () 66-1 URL: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 22 /2