Data Sheet. ALM-1106 GPS Low Noise amplifier with Variable bias current and Shutdown function. Features. Description. Simplified Schmatic

Transcription

1 ALM-11 GPS Low Noise amplifier with Variable bias current and Shutdown function Data Sheet Description Avago Technologies s ALM-11 is a LNA designed for GPS/ISM/Wimax applications in the (.9-3.5)GHz frequency range. The LNA uses Avago Technologies s proprietary GaAs Enhancement-mode phemt process to achieve high gain operation with very low noise figures and high linearity. Noise figure distribution is very tightly controlled. Gain and supply current are guaranteed parameters. A MOS compatible shutdown pin is included to turn the LNA off and provide a variable bias. The ALM-11 LNA is useable down to 1V operation. It achieves low noise figures and high gain even at 1V, making it suitable for use in critical low power GPS/ISM band applications. Simplified Schmatic VSD RF_IN 1 BIAS Amplifier2 AMP1 Surface Mount 2. x 2. x 1.1 mm 3 O AY WW Note: Package marking provides Orientation and identification A = Product ode Y = Year WW = Work Week VDD 2 Pin Pin 5 Pin RF_OUT Pin onfiguration GND Bottom View LNA I/O s : 1. N. VSD 2. RF_IN 5. RF_OUT 3. N. VDD BOTTOM PADDLE : GND Pin 1 Pin 2 Pin 3 Features Advanced GaAs E-pHEMT Low Noise:.8 db typ High Gain : 1.3 db typ Low component count High IIP3 and IP1dB Wide Supply Voltage: 1V to 3.V Shutdown current : <.1uA MOS compatible shutdown pin (VSD) 2.85V : 9uA Adjustable bias current via one single external resistor/voltage Small Footprint: 2x2mm 2 Low Profile: 1.1mm typ Ext matching for non-gps freq band operation Specifications (25 deg): At 1.575GHz, 2.85V 8mA (Typ) Gain = 1.3 db (Typ) NF =.8 db (Typ) IIP3 =.7 dbm (Typ) IP1dB = 1.8 dbm (Typ) S11 = db (Typ) S22 = -12. db (Typ) Typical 1.V supply S21 = 12.3dB NF = 1.dB Ids = 3.mA Note: Measurements obtained using demoboard described in Figure.

2 Absolute Maximum Ratings [1] Symbol Parameter Units Absolute Maximum VDS Drain - Source Voltage[2] V 3. IDS Drain urrent[2] ma 15 Pdiss Total Power Dissipation [3] mw 5 Pin max. RF Input Power dbm +1 TH hannel Temperature 15 TSTG Storage Temperature -5 to 15 qch_b Thermal Resistance [] /W 232 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assuming D quiescent conditions. 3. Board (package belly) temperature T B is 25. Derate.32mW/ for T B > hannel-to-board thermal resistance measured using 15 Liquid rystal Measurement method. Product onsistency Distribution harts [5,] 3 Stdev =. 3 Stdev = Std +3 Std 2 +3 Std Figure GHz; LSL = 12.7dB, Nominal = 1.3dB, USL = 15.8dB Figure GHz; Nominal =.8dB, USL = 1.3dB 3 25 Stdev = Std Figure GHz; Nominal = 8mA, USL = 13mA Notes: 5. Distribution data sample size is 1K samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits.. Measurements are made on production test board, which represents a trade-off between optimal Gain, NF, IIP3, IP1dB and VSWR. ircuit losses have been de-embedded from actual measurements.

3 Electrical Specifications T A = 25, D bias for RF parameter is VDD = VSD = 8mA (unless otherwise specified) Table 1. Performance table at nominal operating conditions VDD= VSD = +2.85V, R1 = 18K Ohm, Freq=1.575GHz Typical Performance Symbol Parameter and Test ondition Units Min. Typ Max. G Gain db NF Noise Figure db IP1dB Input 1dB ompressed Power dbm 1.8 IIP3 Input 3rd Order Intercept Point Fc +/- 2.5MHz) dbm.7 S11 Input Return Loss db S22 Output Return Loss db Ids Supply urrent ma 8 13 Ish Shutdown VSD = V ua.1 Vds Supply Voltage V 2.85 IP1dB171M Out of Band IP1dB (DS 171MHz) blocking dbm 2.9 IIP3OUT Out of Band IIP3 (DS 1775MHz & 195MHz) dbm 5.5 Table 2 Typical performance at low operation voltages with R1 (see Fig 5) set to Ohm VDD = +2V, VDD= +1.5V & VDD= +1.V, Freq=1.575GHz Typical Performance (VSD=VDD, R1= Ohm) Symbol Parameter and Test ondition Units VDD=2V VDD=1.5V VDD=1.V G Gain db NF Noise Figure db IP1dB Input 1dB ompressed Power dbm IIP3 Input 3rd Order Intercept Point Fc +/- 2.5MHz) dbm S11 Input Return Loss db S22 Output Return Loss db Ids Supply urrent ma Ish Shutdown VSD = V ua Vds Supply Voltage V IP1dB 171M Out of Band IP1dB (DS 171MHz) blocking dbm IIP3 OUT Out of Band IIP3 (DS 1775MHz & 195MHz) dbm

4 GND VDD SD GND H.1 W.22 e 3.8.1µF 12Ω / / 33nH.8pF.7nH RF IN 5.nH 1pF RF OUT 1nH 18k.8pF GPS LNA MAR 25 TL. Avago Technologies Figure. Demoboard and Application ircuit omponents VSD RF_IN =.8 pf R R1 R=18 kohm L L1 L=5. nh Johanson 2 3 =.1 uf L 1 L2 L=1 nh Johanson 2 BIAS 5 =.8 pf Amplifier2 AMP1 +VDD PRL PRL1 R=12 Ohm L=33 nh Johanson 2 L L3 L=.7 nh R= Toko LL15 2 RF_OUT Notes L1 and L2 form the input matching network. The LNA module has a integrated coupling and D-blocking capacitors at the input and output. Best noise performance is obtained using high-q wirewound inductors. This circuit demonstrates that low noise figures are obtainable with standard 2 chip inductors. Replacing L1, L2 and L3 with high-q wirewound inductors (eg. ilcraft 2S series) will yield.1db lower NF and.db higher Gain. L3 is an output matching inductor. 5 is a RF bypass capacitor. PRL1 is a network that isolates the measurement demoboard from external disturbances. 3 and mitigates the effect of external noise pickup on the VSD and VDD lines. These components are not required in actual operation. Bias control is achieved by either varying the VSD voltage without R1 or fixing the VSD voltage to VDD and varying R1. Typical value for R1 is 18k Ohm for 8mA total current at VDD=+2.85V. Higher gain and IP3 performance can be obtained by increasing the supply current. This can be achieved by reducing the value for R1 to obtain desired current. For low voltage operation such as 1.5V or 1.V, the R1 may be omitted and VSD connected directly to the supply pins. Figure 5. Demoboard schematic

5 ALM-11 Typical Performance urves, R1 = 18K Ohm (At 25 unless specified otherwise) Gain (db) GHz 2GHz 2.GHz NF (db) GHz 2GHz 2.GHz Figure. Gain vs Vdd vs Freq Figure 7. NF vs Vdd vs Freq IIP3 (dbm) GHz 2 2GHz 2.GHz Figure 8. IIP3 vs Vdd vs Freq IP1dB (dbm) Figure 9. IP1dB vs Vdd vs Freq 1.575GHz 2GHz 2.GHz 12 1 Ids (ma) GHz 2GHz 2.GHz Figure 1. Ids vs Vdd vs Freq 5

6 ALM-11 Typical Performance urves, R1 = 18K Ohm (At 25 unless specified otherwise) Gain (db) deg - deg deg 11 Figure 11. Gain vs Vdd vs Temp NF (db) Figure 12. NF vs Vdd vs Temp 25 deg - deg 85 deg IIP3 (dbm) deg - deg 85 deg IP1dB (dbm) deg - deg 85 deg Figure 13. IIP3 vs Vdd vs Temp Figure 1. IP1dB vs Vdd vs Temp Ids (ma) deg - deg 85 deg Figure 15. Ids vs Vdd vs Temp

7 ALM-11 Typical Scattering Parameters at 25, V DD = 2.85V, I DS = 8 ma Freq. S11 S21 S12 S22 (GHz) Mag. Ang. (db) Mag. Ang. (db) Mag. Ang. Mag. Ang

8 ALM-11 Typical Noise Parameters, V DD = 2.85V, I DS = 8mA Freq (GHz) Fmin (db) Gopt Mag. Gopt Ang. Rn/5 5dB

9 Package Dimensions TOPVIEW SIDEVIEW BOTTOM VIEW 2. ± ±.1. R.15 (X).3 PIN 1 PIN 1 2. ±.1 O AY WW (X) (3X).9 (X).1 (X).3 Device Orientation REEL Existing Thermal Ground to pad clearance =.1mm Samsung Thermal Ground to pad min clearance =.25mm ARRIER TAPE USER FEED DIRETION OVER TAPE Tape Dimensions Notes: 1. Measured from centerline of sprocket hole to centerline of pocket 2. umulative tolerance of 1 sprocket holes is ±.2 All dimensions in millimeters unless otherwise stated. 9

10 Reel Dimensions 178. ± 1. FRONT BAK SEE DETAIL "x" FRONT VIEW REYLE LOGO R ** * -. Slot hole 'b' R5.2 FRONT BAK 178.± ±.5 EMBOSSED RIBS RAISED:.25mm, WIDTH: 1.25mm BAK VIEW Slot hole 'o' 51.2 ±.3 1.* MAX

11 Part Number Ordering Information Part Number No. of Devices ontainer ALM-11-TR1G 3 7 Reel ALM-11-TR2G 1 13 Reel ALM-11-BLKG 1 antistatic bag For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. opyright Avago Technologies. All rights reserved. Obsoletes AV1-28EN AV2-19EN - August 2, 28 11