50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
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1 S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 5 MHz to 4 MHz, being suitable for use in both receiver and transmitter of telecommunication system up to 4 GHz. It has an active bias network for stable current over temperature and process variation. The amplifier is available in an SOT89 package and passes through the stringent DC, RF, and reliability tests. 1.2 Features 21.8 db gain at 2 MHz 2. dbm P1dB at 2 MHz 39. dbm OIP3 at 2 MHz Gain flatness = 2.6 db at 5 ~ 25 MHz 5 input & output matching MTTF: > 1 Years Single supply: +5 V 1.3 Applications Gain & Return Loss vs. Frequency(with BiasTees) S22 S11 S Frequency (MHz) Wide-band application at 5 ~ 3 MHz IF & CATV application at 5 ~ 12 MHz SMATV & ONU application at 5 ~ 3 MHz CATV application at 5 ~ 215 MHz (ZO = Package Profile & RoHS Compliance SOT89, 4.5x4. mm 2, surface mount RoHS-compliant 1/13 ASB Inc. sales@asb.co.kr January 214
2 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +5 V, TA = +25 C, ZO = 5 Parameter 5-3 Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 14 ma Device Voltage +3.8 V 1) OIP3 is measured with two tones at an output power of +5 dbm/tone separated by 1MHz. 2.2 Product Specification Supply voltage = +5 V, TA = +25 C, ZO = 5 Parameter Min Typ Max Unit Frequency 2 MHz Gain 21.8 db S db S db Noise Figure 1.8 db OIP3 39. dbm P1dB 2. dbm Current 14 ma Device Voltage +3.8 V 2.3 Pin Configuration Pin Description Simplified Outline 1 RF_IN 2 Ground 3 RF_OUT & Bias 2/13 ASB Inc. sales@asb.co.kr January 214
3 2.4 Absolute Maximum Ratings Parameters Operation Case Temperature Storage Temperature Device Voltage Operation Junction Temperature Input RF Power (CW, 5 matched) Max. Ratings -4 to 85 C -4 to 15 C +6 V +15 C +25 dbm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 55 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 75 V MM Class A Voltage Level: 1 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 26 C reflow (Intentionally Blanked) 3/13 ASB Inc. sales@asb.co.kr January 214
4 3. Application: 5 ~ 3 MHz (V device = +3.8 V) 3.1 Application Circuit & Evaluation Board Vsupply = +5 V R1 C4 C3 RF IN C1 L1 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A2 Bill of Material Symbol Value Size Description Manufacturer - - MMIC Amplifier ASB C1, C2, C3 1 pf 63 DC blocking capacitor Murata C4 1 F 63 Decoupling capacitor Murata L1 68 nh 63 RF choke inductor Murata R Drop resister Samsung 4/13 ASB Inc. sales@asb.co.kr January 214
5 S-parameters (db) Stability Factor, K 3.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 5 Parameter 5-35 Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 14 ma Device Voltage +3.8 V 1) OIP3 is measured with two tones at an output power of +5 dbm/tone separated by 1MHz. 3.3 Plot of S-parameter & Stability Factor 3 2 S S S12 K S Frequency (MHz) 2 1 5/13 ASB Inc. sales@asb.co.kr January 214
6 4. Application: 5 ~ 12 MHz (IF & CATV, V device = +3.8 V) 4.1 Application Circuit & Evaluation Board Vsupply = +5 V R1 C4 C3 RF IN C1 L1 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A2 Bill of Material Symbol Value Size Description Manufacturer - - MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 - - Not used C4 1 F 85 Decoupling capacitor Murata L1 1 H 63 RF choke inductor Samsung R Drop resister Samsung 6/13 ASB Inc. sales@asb.co.kr January 214
7 S-parameters (db) Stability Factor, K 4.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 5 Parameter 5-12 Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 14 ma Device Voltage +3.8 V 1) OIP3 is measured with two tones at an output power of +5 dbm/tone separated by 1MHz. 4.3 Plot of S-parameter & Stability Factor 3 2 S S S12 K S Frequency (MHz) 7/13 ASB Inc. sales@asb.co.kr January 214
8 5. Application: 5 ~ 3 MHz (SMATV & ONU, V device = +3.8 V, ) 5.1 Application Circuit & Evaluation Board Vsupply = +5 V R1 C4 C3 RF IN C1 L1 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A2 Bill of Material Symbol Value Size Description Manufacturer - - MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 - - Not used C4 1 F 85 Decoupling capacitor Murata L1 1 H 63 RF choke inductor Samsung R Drop resister Samsung 8/13 ASB Inc. sales@asb.co.kr January 214
9 S-parameters (db) Stability Factor, K 5.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 5 Parameter 5-3 Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 14 ma Device Voltage +3.8 V 1) OIP3 is measured with two tones at an output power of +5 dbm/tone separated by 1MHz. 5.3 Plot of S-parameter & Stability Factor 3 2 S S11 S22 S K Frequency (MHz) 9/13 ASB Inc. sales@asb.co.kr January 214
10 6. Application: 5 ~ 215 MHz (CATV, V device = +3.8 V, Zo = 75 ) 6.1 Application Circuit & Evaluation Board Vsupply = +5 V R1 C4 C3 RF IN C1 L1 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer - - MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 - - Not used C4 1 F 85 Decoupling capacitor Murata L1 1 H 63 RF choke inductor Samsung R Drop resister Samsung 1/13 ASB Inc. sales@asb.co.kr January 214
11 S-parameters (db) Stability Factor, K 6.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter 5-3 Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 14 ma Device Voltage +3.8 V 1) OIP3 is measured with two tones at an output power of +5 dbm/tone separated by 1MHz. 6.3 Plot of S-parameter & Stability Factor 3 2 S K S22 S11 S Frequency (MHz) /13 ASB Inc. sales@asb.co.kr January 214
12 7. Package Outline (SOT89, 4.5x4.x1.5 mm) WG323 Pxxxx Part No. Lot No. Symbols Dimensions (In mm) MIN NOM MAX A L b b C D D E E e H S e Surface Mount Recommendation (In mm) NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 12/13 ASB Inc. sales@asb.co.kr January 214
13 9. Recommended Soldering Reflow Profile 26 C 2~4 sec 2 C Ramp-up (3 C/sec) Ramp-down (6 C/sec) 15 C 6~18 sec (End of Datasheet) 13/13 ASB Inc. sales@asb.co.kr January 214
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![Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]](/thumbs/88/115381636.jpg "Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]")
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
QPA9801SR MHz 1/4W Balanced Amplifier. General Description. Product Features. Functional Block Diagram Applications. Ordering Information
General Description The is a balanced amplifier module with embedded hybrid couplers to convert to single ended input and output ports. The module has an enable pin to allow for shutting down of the amplifier.
Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX
Ultra Linear Low Noise Monolithic Amplifier 50Ω The Big Deal 0.05 to 4 GHz Ultra High IP3 Broadband High Dynamic Range without external Matching Components May be used as a replacement for RFMD SPF-5189Z
MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
PRELIMINARY MSW2T-2030-192/MSW2T-2031-192/MSW2T-2032-192 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 50 MHz to 6 GHz Surface Mount SP2T Switch 5mm x 8mm x 2.5mm
HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz
v1.65 Typical Applications The HMC471MSG / HMC471MSGE is a dual RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features
Monolithic Amplifier TSY-13LNB+ Wideband. 50Ω 0.03 to 1 GHz. The Big Deal
Wideband Monolithic Amplifier 50Ω 0.03 to 1 GHz The Big Deal Very wideband, 30 MHz 1 GHz Low NF over entire frequency band, 1.2 db Low current and low voltage (2.7V and 7.7 ma) Internal bypass switching
QPA9120SR. High Gain High Linearity Driver Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a wideband, high gain, and high linearity driver amplifier in a low-cost, RoHS compliant 3x3 mm QFN package. With Qorvo s E-pHEMT process, this amplifier delivers exceptional performance
Features. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
Monolithic Amplifier LHA-1H+ Ultra High Dynamic Range to 6 GHz
Ultra High Dynamic Range Monolithic Amplifier 50Ω 0.05 to 6 GHz The Big Deal Ultra High IP3 Broadband High Dynamic Range without external Matching Components MCLP PACKAGE Product Overview (RoHS compliant)
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features OIP3 = 41.0 dbm @ 1900 MHz Gain = 15.5 db @ 1900 MHz Output P1 db = 25.5 dbm @ 1900 MHz 50 Ω Cascadable Lead-free/RoHS-compliant SOT-89 SMT package Product Description BeRex s BT09VG is
Monolithic Amplifier EHA-163L+ Low Current, Wideband, Flat Gain. 50Ω DC to 16 GHz. The Big Deal
Low Current, Wideband, Flat Gain Monolithic Amplifier 50Ω DC to 16 GHz The Big Deal Super Wideband, DC to 16 GHz Excelent Gain Flatness, ±0.75 up to 12 GHz Low Current, 20 ma CASE STYLE: MC1630-1 Product
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
MMA GHz 1W Traveling Wave Amplifier Data Sheet
Features: Frequency Range:.1 2 GHz P3dB: +29 dbm Gain: 12.5 db Vdd =12 V Ids =5 ma Input and Output Fully Matched to 5 Ω Applications: Fiber optics communication systems Microwave and wireless communication
Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
![Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V](/thumbs/90/101370216.jpg "Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V")
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
Analog Devices Welcomes Hittite Microwave Corporation
Analog Devices Welcomes Hittite Microwave Corporation www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.915 GaAs MMIC 6-BIT DIGITAL Typical Applications The HMC648ALP6E is ideal for:
Typical Performance 1. IS-95C ACPR dbm WCDMA ACLR dbm
Device Features OIP3 = 45.0 dbm @ 1900 MHz Gain = 15.0 db @ 1900 MHz Output P1 db = 27.5 dbm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protection Circuit Lead-free/RoHS-compliant SOT-89 SMT package
CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E
Dual CATV 5MHz to 1MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-1Z is a high performance GaAs HBT MMIC amplifier.
400 MHz 4000 MHz Low Noise Amplifier ADL5521
FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 db at 900 MHz Including external input match Gain of 20.0 db at 900 MHz OIP3 of 37.7 dbm at 900 MHz P1dB of 22.0 dbm at 900 MHz Integrated
MMA C3 6-22GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vdd=5V P3dB: 19.5 dbm @Vdd=5V Gain: 14 db Vdd =3 to 6 V Ids = 130 ma Input and Output Fully Matched to 50 Ω Applications: Communication systems Microwave
CMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver amplifier housed in a leadless
DC to 1000 MHz IF Gain Block ADL5530
DC to MHz IF Gain Block ADL3 FEATURES Fixed gain of 6. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power
Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use
Features. = +25 C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications Functional Diagram The HMC36LP3 / HMC36LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF
OBSOLETE HMC5846LS6 AMPLIFIERS - LINEAR & POWER - SMT. Electrical Specifications, T A. Features. Typical Applications. General Description
v1.414 Typical Applications The HMC846LS6 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram Electrical Specifications, T A = +2 C Vdd = Vdd1,
Preliminary Datasheet
Device Features This can be operated at Vd of 3.0V N.F = 0.78 db @ 1850MHz at Demo board 31.5 dbm Output IP3 at 0dBm/tone at 1850MHz 15.6 db Gain at 1850MHz 17.7 dbm P1dB at 1850 MHz Lead-free/Green/RoHS