2.4-GHz SiGe Power Amplifier for b/g WLAN Systems T7031. Preliminary

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1 Features Frequency Range 2.4 GHz to 2. GHz Supply Voltage 2.7 V to 3.6 V 21 dbm Linear Output Power for IEEE 82.11b Mode 3.% EVM at 1. dbm Output Power for IEEE 82.11g Mode On-chip Power Detector with 2 db Dynamic Range Power-down Mode and Biasing Control No External Components for Input Matching Low Profile Plastic Package QFN16 (4 4.9 mm) Benefits IEEE 82.11b WLAN IEEE 82.11g OFDM WLAN PC Cards, PCMCIA 2.4 GHz ISM Band Application Electrostatic sensitive device. Observe precautions for handling. Description Circuitry The PA s is designed for low current-consumption 82.11b and 82.11g multi-mode applications such as Mini-PCI and PCMCIA for portable devices. The low profile plastic package with internal input matching to Ω minimizes the PCB board-space and allows simplified integration with very few passive components. The on-chip power-detector provides a voltage linear to the output power while the standby/bias control logic provides power saving and shutdown as well as a linear adjustment of output power. The PA is realized as a two stage PA with internal interstage-matching and an open-collector output structure. 2.4-GHz SiGe Power Amplifier for 82.11b/g WLAN Systems T731 Preliminary Process The power amplifier is designed in Atmel's Silicon-Germanium (SiGe) process and provides excellent linearity and noise performance, high gain as well as good poweradded efficiency. Rev.

2 Figure 1. Block Diagram NC SiGe PA T731 Det. V2_PA_OUT Standby/ biasing control INT_MATCH GND V_DET_OUT 8 V2_PA_OUT V2_PA_OUT V2_PA_OUT VCC GND VCTRL 2 T731 [Preliminary]

3 T731 [Preliminary] Pin Configuration Figure 2. Pinning QFN16 V1_PA V1_PA PA_IN IN_MATCH VCC GND VCTRL INT_MATCH T731 GND on the Paddel NC GND V_DET_OUT INT_MATCH V2_PA_Out V2_PA_Out V2_PA_Out V2_PA_Out Pin Description Pin Symbol Function 1 VCC Supply voltage 2 GND Ground 3 VCTRL Power-up/biasing control voltage 4 INT_MATCH Interstage matching (must not be connected) V2_PA_Out Power amplifier output and supply voltage for 2 nd power amplifier stage 6 V2_PA_Out Power amplifier output and supply voltage for 2 nd power amplifier stage 7 V2_PA_Out Power amplifier output and supply voltage for 2 nd power amplifier stage 8 V2_PA_Out Power amplifier output and supply voltage for 2 nd power amplifier stage 9 INT_MATCH Interstage matching (must not be connected) 1 V_DET_OUT Power detector output 11 GND Ground 12 NC Not connected 13 IN_MATCH Input matching (must not be connected) 14 PA_IN Power amplifier input 1 V1_PA Supply voltage for 1 st power amplifier stage 16 V1_PA Supply voltage for 1 st power amplifier stage Slug Ground 3

4 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage, no RF voltage applied V CC 6 V Supply current I CC 2 ma Junction temperature T j 1 C Storage temperature T Stg -4 to +12 C Input RF power P IN 12 dbm Control voltage power up/down and biasing V CTRL to 3 V Note: The part may not survive all maximums applied simultaneously. Thermal Resistance Parameters Symbol Value Unit Junction ambient R thja 4 K/W Operating Range Parameters Symbol Value Unit Supply voltage range V CC 2.7 to 3.6 V Ambient temperature range T amb -3 to +8 C Electrical Characteristics No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 1. Supply voltage V CC V A 1.1 Frequency Range f 24 2 MHz A 1.2 PA operating mode V CTRL 1 2 V A Control voltage range 1.3 Power-down Mode V CTRL.2 V A 1.4 Quiescent I CQ 7 ma A Current Consumption 1. Power-down mode I PD 1 µa A *) Type means: A = 1% tested, B = 1% correlation tested, C = Characterized on samples, D = Design parameter 4 T731 [Preliminary]

5 T731 [Preliminary] Electrical Characteristics - Unmodulated Carrier Test conditions (unless otherwise stated): V CC = 3.3 V, Frequency = 2.4 GHz, T amb = 2 C No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 2. Saturated output power For reference P SAT 24 dbm A 2.1 P1dB output Power P1dB 23 dbm A nd harmonic rejection 2.3 Small signal gain 2.4 Reverse isolation 2. Input Ω VSWR = 18 dbm, with external matching I CQ, small signal condition I CQ, small signal condition I CQ, small signal condition 2f OUT 3 db A GL 22 db A ISOr 4 db A VSWRin 2:1 C 2.6 Output Ω VSWR I CQ, small signal condition, with external matching VSWRout 2:1 C *) Type means: A = 1% tested, B = 1% correlation tested, C = Characterized on samples, D = Design parameter Electrical Characteristics - 11 Mbps CCK Modulation Test conditions (unless otherwise stated): V CC = 3.3 V, Frequency = 2.4 GHz, T amb = 2 C, IEEE 82.11b conform 11 Mbps CCK modulation with gaussian transmit filtering No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 3. Maximum linear output power ACPR1 33 dbc ACPR2 dbc P LIN 21 dbm A 3.1 Linear power gain = P LIN ACPR1 33 dbc ACPR2 dbc GL 22 db A 3.2 Current Consumption = P LIN ACPR1 33 dbc ACPR2 dbc I CC 13 ma A *) Type means: A = 1% tested, B = 1% correlation tested, C = Characterized on samples, D = Design parameter Electrical Characteristics - 4 Mbps OFDM Modulation Test conditions (unless otherwise stated): V CC = 3.3 V, Frequency = 2.4 GHz, T amb = 2 C, IEEE 82.11g conform 4 Mbps OFDM modulation,.7% EVM measurement equipment noise floor included in EVM measurement result. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 4. Error vector magnitude = 1. dbm EVM 3. % C 4.1 Linear power gain = 1. dbm GL 22 db A 4.2 Current consumption = 1. dbm I CC 8 ma A *) Type means: A = 1% tested, B = 1% correlation tested, C = Characterized on samples, D = Design parameter

6 Power Detector Test conditions (unless otherwise stated): V CC = 3.3 V, Frequency = 2.4 GHz, T amb = 2 C No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Detector voltage. P range OUT = 2 to 22 dbm V DET 2 V A.1 Settling time t SET. µs C *) Type means: A = 1% tested, B = 1% correlation tested, C = Characterized on samples, D = Design parameter Typical Operating Characteristics Figure 3. Typical Gain and Current versus Control Voltage Frequency = 24 MHz, P IN = -4 dbm, V CC = 3.3 V 3 2 Gain I ges Gain (db) 1 I I (ma) V CTRL (V) I 1 I 2 7 Figure 4. S-parameter, Magnitude 6 T731 [Preliminary]

7 T731 [Preliminary] Figure. S-parameters, Magnitude and Phase Figure 6. Power-sweep, CW-mode Frequency = 24 MHz, V CC = 3.3 V, V CTRL = 1.6 V 4 3 PAE Gain (db), PAE (%) I ges GAIN I (ma) I 3 I 1 I (dbm) 7

8 Figure 7. CCK-modulation Spectrum Conforming Compliance to 82.11b Spectral Mask (3/ db Additional Margin at ACPR 1/2 Compared to Limit Given by IEEE82.11b Standard) at = 21 dbm, V CC = 3.3 V, V CTRL = 1.6 V Figure 8. Frequency-sweep at P IN = -1.9 dbm, V CC = 3.3 V, V CTRL = 1.6 V (ACPR Limit), CW-mode 3 18 (dbm), Voltage (V), Gain (db), PAE (%) I ges PAE Gain Frequency (MHz) I 3 I 1 I I (ma) 8 T731 [Preliminary]

9 T731 [Preliminary] Figure 9. V CTRL -sweep at Maximum Linear (ACPR Limit), CW-mode, Frequency = 24 MHz, P IN = -1.9 dbm, V CC = 3.3 V (dbm), Gain (db), PAE (%) Gain PAE V CTRL (V) I ges I 3 I 1 I I (ma) Figure 1. Error Vector Magnitude (EVM) for 4 MBit OFDM-modulation, Power Added Efficiency (PAE), Gain versus GAIN 1 Gain (db), PAE (%) EVM limit 3.% PAE EVM EVM (%) (dbm) Figure 11. Frequency-sweep at EVM = 3.% (EVM limit), CW-mode P IN = -6.3 dbm, V CC = 3.3 V, V CTRL = 1.6 V 3 12 (dbm), Gain (db), PAE (%) I ges Gain PAE Frequency (MHz) I 1 I 2 I I (ma) 9

10 Figure 12. V CTRL -sweep at EVM = 3.% (EVM limit), CW-mode Frequency = 24 MHz, P IN = -6.3 dbm, V CC = 3.3 V (dbm), Gain (db), PAE (%) PAE Gain I ges I V CTRL (V) I 1 I I (ma) Figure 13. Power Detector Voltage versus (Unmodulated Carrier), CW-Mode Frequency = 24 MHz, V CC = 3.3 V, V CTRL = 1.6 V Detector Voltage (V) V DET (dbm) 1 T731 [Preliminary]

11 T731 [Preliminary] Figure 14. Power Detector Response Rising Edge Figure 1. Power Detector Response Falling Edge 11

12 Evaluation Board Schematic Figure 16. Schematic of the Evaluation Board V_DET_OUT V2_PA C 7 C 13 NC NC C NC 13 SiGe PA T731 Det. 8 L 2 PA_IN C T 1 * T 2 * T 3 * C C 11 PA_Out V1_PA L 1 16 Standby/ biasing control C 3 C 2 C C C 8 NC * Microstrip Line Microstrip Line Length Width T 1 3. mm.64 mm T mm.64 mm T mm.64 mm C 14 C 6 C 9 Metal layer distance to ground: 36 µm CU metal layer thickness: 3 µm Dielectrical constant εr: 4.4 V CC V CTRL 12 T731 [Preliminary]

13 T731 [Preliminary] Evaluation Board Bill of Materials Table 1. Bill of Materials of the Evaluation Board Component Reference Value Size Capacitor C 1 4p7 63 Capacitor C 2 6p 63 Capacitor C 3 1n 63 Capacitor (1) C 4 1µ 63 Capacitor C 4p7 63 Capacitor (1) C 6 1n 63 Capacitor (1) C 7 1µ 63 Capacitor C 8 4p7 63 Capacitor (1) C 9 1n 63 Capacitor C 1 4p7 63 Capacitor C 11 2p2 63 Capacitor C 12 6p 63 Capacitor C 13 1n 63 Capacitor (1) C 14 1µ 63 Inductor L 1 22n 63 Inductor L 2 1n 63 Note: 1. Can be omitted at optimum DC supply Evaluation Board Layout Figure 17. Layout of the Evaluation Board 13

14 Evaluation Board Set-up Institutions After connection of all cables (RF and DC): V CC, V 1, V 2 = 3.3 V Increase V CTRL until 7 ma quiescent current is reached (V CTRL ~ 1. V, at frequency = 24 MHz, P IN = -4 dbm) Unmodulated measurements: Measure gain,, PAE, currents, V DET versus P IN, V CTRL, V CC, frequency Modulated measurements: increase input power until desired linear output power is reached; this means in case of 11 Mbps CCK Modulation APCR measurement: ~ 21 dbm 4 Mbps OFDM Modulation measurement of EVM (Error Vector Magnitude): ~ 1. dbm 14 T731 [Preliminary]

15 T731 [Preliminary] Ordering Information Extended Type Number Package Remarks MOQ T731-PEP QFN16-4 x 4 Taped and reeled 1 pcs. T731-PEQ QFN16-4 x 4 Taped and reeled 6 pcs. T731-PEPM QFN16-4 x 4 Package Information Taped and reeled Pb free, halogen free 1 pcs. T731-PEQM QFN16-4 x 4 Taped and reeled Pb free, halogen free 6 pcs. Demoboard-T731 Evaluation board 1 1

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