2.4~2.5 GHz High Power Amplifier Pin Details

Transcription

1 is a linear, three-stages power amplifier MMIC with super high output power in 2.4GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers 22 output power under 54Mbps OFDM (IEEE82.g) modulation, with 3% EVM at 3.3V. It can also deliver 25.5 g linear power at 5V. The PA also includes on-chip power detector, providing a DC voltage proportional to the output power of device. The is housed in a 3 x 3(mm), 6 pin, QFN leadless package. High Power: 22 g linear power at 3.3V 25.5 g linear power at 5V High Gain: 3.5dB Gain at 3.3V, Pout=22 Detector Major Applications Pin Details IEEE 82.b/g Wireless LAN Systems 2.4 GHz ISM Band Application Suitable for high power WLAN applications Pin Number 2 Name RF_IN Description RF input Ground 3 Vref First stage Bias Functional Block Diagram 4 5 Vcc_bias Vref2 Power supply Bias Second stage Bias Vcc_ Vcc_2 6 7 Vref3 Third stage Bias Ground RF_IN 8 Dect_out Detector Supply Voltage 9 No contact RF output Vref RF output Vcc_bias Vref2 Vref3 Dect_out Vcc_2 Vcc_ RF output No contact Power supply input Power supply input QFN-6pin, 3x3 (mm) 6 No contact Pkg Base Ground of 6

2 Items Symbol Test Conditions Max. Typ. Min. Unit Freq. f GHz Power Pout= db PdB 28.5 Idle current 7 ma Input return loss Output return loss - -8 db db Linear 64QAM modulation 64QAM modulation type Current consumption Pout= ma Gain flatness +/-.5 Harmonics 2f 3f 2f 3f linear power PAE 5% % Max. Input power No damage On chip 22.5 V Absolute Maximum Ratings Parameter Rating Unit DC Power Supply V DC Supply Current ma RF Input Power Operating Ambient Temperature -4 to +85 Storage Temperature -4 to +25 Notes:.Exceeding Maximum ratings could cause damage to the device. 2.This device operation condition is biasing at 5V, please refer to the application note. Caution RF Integrated Corp. believes the information provided is reliable at present time. However, we assumes no responsibility for inaccuracies and omissions and use of the information shall be entirely at the user s own risk. RF Integrated Corp. reserves the right to make change to the specifications without notice. 2of 6

3 Data Charts ( Evaluation Kit, RF Signal = With IEEE 82.g Modulation (54Mbps), Vcc=3.3V, Vref=2.7V, TA = 25, unless otherwise noted.) EVM, Icc vs. Output Power EVM ( %) Icc (ma) Pout () Icc(mA)@Vc=3.3V EVM(%)@Vc=3.3V Fig. Gain vs. Output Power Detector Output vs. Output Power Gain (db) Pout () Detector Output ( V) Pout () Fig.2 Fig.3 3of 6

4 Data Charts- Small Signal S-Parameter Data S _8_9 75_8_ 75_8_2 75_8_3 75_8_4 Graph 2 75_8_5 75_8_6 75_8_7 75_8_8 75_7_ GHz db GHz db Frequency (GHz) Fig.4 S S22 75_7_ 75_8_ 75_8_2 75_8_3 75_8_4 Graph 75_8_5 75_8_6 75_8_7 75_8_8 75_8_9 75_8_9 75_8_ 75_8_2 75_8_3 75_8_4 Graph 3 75_8_5 75_8_6 75_8_7 75_8_8 75_7_ GHz -2.5 db GHz db GHz db 2.53 GHz db Frequency (GHz) Fig Frequency (GHz) Fig.6 4of 6

5 Package Outline Top View Bottom View TYP MARKING.5TYP TYP..5.5 TYP. Side View Unit: mm. ~ MAX. C.25 SEATING PLANE Note:. Dimension and tolerance conform to ASME Y4.5M Refer to JEDEC STD. MO-22 WEED-2 ISSUE B For more detailed information, please refer to Application Note. 5of 6

6 EVB Circuit Diagram 3.3V Vcc,2 3.3V Vcc3 2uF C C9 pf Option 4.7nH/2.2nH L2 nf C8 2.7nH L uf C7 Option RF_IN C.5pF Option Bias Ckt ohm MTL.5mm 5ohm MTL 3.5mm 3.9pF C4.8pF C5 pf C pF 43ohm R 3ohm R2 kohm R3 56ohm R4 C3 27kohm R5 nf C2 Vref 2.7V Vcc_bias 3.3V Vref2,3 2.7V Det_out 6of 6