MEDIUM POWER AMPLIFIER GaAs MMIC
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1 MEDIUM POWER AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG132V is a GaAs MMIC designed mainly for the final stage power amplifier of Japanese PHS handset, but suitable digital wireless phone and wireless LAN. This amplifier has wide variable gain capability of 2dB dynamic range. NJG132V has input and output matching circuits internally and features low voltage and high efficiency operation. The output power of 21dBm is easily available with very low distortion. PACKAGE OUTLINE NJG132V FEATURES Voltage gain under low distortion Low voltage operation Low current consumption High gain Low distortion (ACP) Reduction of Parasitic oscillation Input and output internal matching circuit Package +3.V typ. 195mA P OUT =21dBm 32dB -6dBc P OUT =21dBm SSOP14 (Package size: 5.x6.4x1.25mm) PIN CONFIGURATION V Type (Top View) Pin connection 1. RFIN VGG VCONT VGG2 8. RFOUT 9.. VDD VDD
2 ABSOLUTE MAXIMUM RATINGS (T a =+25 C, Z s =Z l =5? ) PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V DD1, V DD2 V GG1, V GG2 =-.9V 6 V Gate Voltage V GG1, V GG2 V DD1, V DD2 =3.V -4 V Gain Control Voltage V CONT V DD1, V DD2 =3.V -4 V Input Power P IN V DD1, V DD2 =3.V, V GG1, V GG2 =-.9V 3 dbm Power Dissipation P D At on PCB board 6 mw Operating Temperature T opr -3~+85 C Storage Temperature T stg -4~+15 C ELECTRICAL CHARACTERISTICS (T a =+25 C, Z s =Z l =5? ) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq V DD1, 2 =3.V GHz Drain Voltage V DD1, V Gate Voltage V GG1, 2 V DD1, 2 =3.V, I idle =18mA V Idle Current *1 I idle V DD1, 2 =3.V, No RF Signal ma Operating Current *1 I DD V DD1, 2 =3.V, P OUT =21dBm ma Gate Current *2 I GG V DD1, 2 =3.V, P OUT =21dBm ua Gain Control Terminal Current I CONT V DD1, 2 =3.V, P OUT =21dBm -2.<V CONT <.V ua Gain Control Voltage V CONT V Small Signal Gain Gain V DD1, 2 =3.V, I idle =18mA db Gain Flatness G flat V DD1, 2 =3.V, I idle =18mA.5 1. db Gain Control Range Pout at 1dB Compression point Adjacent Channel Leakage Power 1 Adjacent Channel Leakage Power 2 G CONT V CONT =-2~V, V DD1, 2 =3.V I idle =18mA db P -1dB V DD1, 2 =3.V dbm 1 2 V DD1, 2 =3.V, P OUT =21dBm offset=6khz, P IN ; π/4 DQPSK V DD1, 2 =3.V, P OUT =21dBm offset=9khz, P IN ; π/4 DQPSK dbc dbc Harmonics P SP V DD1, 2 =3.V, P OUT =21dBm dbc Input VSWR VSWR i V DD1, 2 =3.V Load VSWR Tolerance - *1: VDD1 Terminal VDD2 Terminal Total Current *2: VGG1 Terminal VGG2 Terminal Total Current V DD1, 2 =3.V, P OUT =21dBm Load VSWR=4:1, All Phase Parasitic Oscillation for Fundamental Signal Level : <-6dBc = - 2 -
3 TYPICAL CHARACTERISTICS Gain vs. Frequency vs. Control Voltage 4 =3.V, I DD =18mA, T a -5 vs. Operating Current vs. V DD (P out =21dBm, V cont =V, f=1.9ghz, T a 3 V CONT =V -55 Gain (db) 2-1.V (d Bc) acp -6 Pacp(dBc) P V =2.9V DD 3.V -1.4V V 3.3V 5.V Frequency f (GHz) Operating Current I DD (ma) 26 Output Power vs. Input Power vs. Control Voltage =3.V, I idle =18mA, f=1.9ghz, T a 24 V CONT =V -1V -1.2V Output Power P out (dbm) V Input Power P (dbm) in vs. Input Power vs. Control Voltage -2 =3.V, I idle =18mA, f=1.9ghz, T a -3-4 V CONT =V -1V (dbc) V V Input Power P in (dbm) - 3 -
4 TYPICAL CHARACTERISTICS Gain, P acp vs. Ambient Temperature (V =3.V, V =V, I =18mA, P =21dBm, f=1.9ghz) DD cont idle out Gain Gain (db) 32-6 P acp (dbc) Ambient Temperature a T( o C) Operating Current, P acp vs. Control Voltage (V =3.V, I =18mA, f=1.9ghz, P =-11dBm, T DD idle in a 25-2 Operating Current vs. Ambient Temperature =3.V, V cont =V, I idle =18mA, P out =21dBm, f=1.9ghz) 19 Operating Current I DD (ma) 2 15 I DD -4-6 (dbc) Operating Current I DD (ma) Control Voltage V CONT (V) Ambient Temperature T a ( o C) 5 Gain vs PHS Band Frequency vs. Control Voltage =3.V, I DD =18mA, T a Gain, Operating Current vs. V DD (V cont =V, I idle =18mA@V DD =3.6V, P out =21dBm, f=1.9ghz, T a Gain (db) V CONT =V -1.V -1.4V Gain (db) I DD Operatin Current I DD (ma) Frequency f (GHz) Gain Drain Voltage V DD (V) - 4 -
5 TYPICAL CHARACTERISTICS Output Power,Total Current vs. Input Power Output Power P out (dbm) ( V DD2,3 =3V, V CONT =V, f=1.9ghz, T a Output idle =8mA 6mA 4mA 2mA Total idle =8mA 6mA 4mA 2mA Total Current (ma) Output Power P out (dbm) Output Power, P.A.E. vs. Input Power ( V DD2,3 =3V, V CONT =V, f=1.9ghz, T a =25 o C ) Output idle =8mA 6mA 4mA 2mA idle =8mA 6mA 4mA 2mA Power Added Efficiency (%) Input Power P (dbm) in Input Power P (dbm) in 2 S 11, S 22 vs. Frequency =3.V, I DD =18mA, V cont =V, T a S 11, S 22 (db) - S 22 S Frequency f (GHz) All adjacent channel leakage power used in these evaluations are those of 6kHz offset from fundamental wave at PHS operating condition(? /4QPSK moduration) - 5 -
6 RECOMMENDED CIRCUIT RFin 1 RFin VGG (-.5~-1.2V) <-2V = C2 3 4 VGG1 V DD C2 VDD (3.~5.V) Vcont (~-2V) 5 Vcont VDD2 L1 C2 C3 6 9 C3 C2 7 V GG 2 RFout 8 RFout RECOMMENDED PCB DESIGN : pf C2: 33pF C3: 1uF L1: 4.7nH 1uF PCB : FR4 t=.2mm CAPACITOR MURATA GRM39 Series INDUCTOR TAIYO-YUDEN HK168 Series 1uF 4.7uF The reflow method is recommended for this device to attach on PCB - 6 -
7 APPLICATION CIRCUIT (NEGATIVE VOLTAGE GENERATOR) +3.V -3.V 8 1 NJU766 - uf + kωtrimmer Resistance (7kΩ) (3kΩ) VGG (-.9V Typ.) + - uf +V 1MΩ VCONT (~+2V) 1MΩ 5kΩ NJU out VCONT (~-2V) -V - 7 -
8 PACKAGE OUTLINE (SSOP14) ~ ±.2 6.4± ± M 1.15±.1.5± MAX ±.1 Lead material Lead surface finish Molding material UNIT Weight : Copper : Solder plating : Epoxy resin : mm : 66mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights
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v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
More information50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over
More informationCMD GHz Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Ultra low noise performance High linearity Small die size 2 GB 3 Vgg Vdd 4 RFIN RFOUT Description The CMD63 is a high dynamic range GaAs MMIC low noise amplifier ideally
More informationFeatures. = +25 C, Vdd = 7V, Vctl = 1V, Idd = 165mA*
DRIVER, DC - GHz Typical Applications The is ideal for: Gbps NRZ MZ & Low V Π Modulator Driver Gbps RZ Transmission 4 Gbps DQPSK Broadband Gain Block for Test & Measurement Equipment Military & Space Functional
More informationFeatures. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
More informationOBSOLETE HMC5846LS6 AMPLIFIERS - LINEAR & POWER - SMT. Electrical Specifications, T A. Features. Typical Applications. General Description
v1.414 Typical Applications The HMC846LS6 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram Electrical Specifications, T A = +2 C Vdd = Vdd1,
More informationHMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications
v2.1 Typical Applications The HMC694LP4(E) is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment Features Wide Gain Control Range: 23 db Single Control Voltage
More informationCMD217. Let Performance Drive GHz GaN Power Amplifier
Let Performance Drive Features High Power High linearity Excellent efficiency Small die size Applications Ka-band communications Commercial satellite Military and space Description Functional Block Diagram
More informationFeatures. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The HMC82LP4E is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power:
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.414 Typical Applications The HMC5846LS6
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DESCRIPTION L-BAND SPDT SWITCH GaAs INTEGRATED CIRCUIT PG2012TK The PG2012TK is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application.
More informationHMC659LC5 LINEAR & POWER AMPLIFIERS - SMT. GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz. Features. Typical Applications. General Description
v.61 Typical Applications The wideband PA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: +27.5
More informationProduct Specifications Approval Sheet
TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com
More informationCMD GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wideband performance High gain High linearity HMC98 replacement Small die size RFIN Vdd1 Vdd Vdd3 RFOUT Description The CMD91 is a wideband GaAs MMIC driver amplifier
More informationdbm Storage Temperature Tstg RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 o C)
FEATURES Low Noise Figure :NF = 5 db (Typ.) @ f = 6 GHz High Associated Gain: S 21 = 22 db(typ) @ f = 6 GHz Wide Frequency Band : 57-64 GHz Impedance Matched Zin/Zout = 5Ω DESCRIPTION The is a low noise
More informationC-MOS STEP-UP SWITCHING REGULATOR EQUIVALENT CIRCUIT
C-MOS STEP-UP SWITCHING REGULATOR GENERAL DESCRIPTION The NJU7262 series is a C-MOS step-up switching regulator which contains accurate voltage reference, error amplifier, CR oscillator, control circuit,
More informationFeatures. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power: dbm @ % PAE
More information3 4 ACG1 ACG2. Vgg2 2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance Positive gain slope High output power Low noise figure Small die size 3 4 ACG ACG Vgg RFOUT & Vdd Description RFIN The CMD9 is wideband GaAs
More information2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance High linearity High output power Excellent return losses Small die size 2 3 ACG1 ACG2 RFOUT & Vdd Description RFIN 1 The CMD29 is wideband GaAs
More informationParameter Min. Typ. Max. Units Frequency Range GHz
v.312 27-31. GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar & VSAT Test Equipment Functional Diagram Features Wide Gain Control
More information3 4 ACG1 ACG2. 2 Vgg2 RFIN. Parameter Min Typ Max Units. Frequency Range DC - 24 GHz. Gain 18 db. Noise Figure 2.5 db. Output P1dB 25 dbm
Features Ultra wideband performance Positive gain slope High output power Low noise figure Small die size Description The CMD44 is wideband GaAs MMIC distributed amplifier die which operates from DC to
More informationFeatures. = +25 C, Vdd = +4V, Idd = 90 ma [2]
v.91 HMCLCB AMPLIFIER, 1-27 GHz Typical Applications This HMCLCB is ideal for: Features Noise Figure: 2.2 db @ 2 GHz Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation
More informationCMD GHz GaN Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram High gain Low noise figure High linearity High RF power survivability Small die size Description Vdd The CMD9 is a broadband MMIC GaN low noise amplifier ideally suited
More informationHMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram
v2.14 Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar Test Equipment Functional Diagram Features Wide Gain Control Range: 1 db Single
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