MEDIUM POWER AMPLIFIER GaAs MMIC

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1 MEDIUM POWER AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG132V is a GaAs MMIC designed mainly for the final stage power amplifier of Japanese PHS handset, but suitable digital wireless phone and wireless LAN. This amplifier has wide variable gain capability of 2dB dynamic range. NJG132V has input and output matching circuits internally and features low voltage and high efficiency operation. The output power of 21dBm is easily available with very low distortion. PACKAGE OUTLINE NJG132V FEATURES Voltage gain under low distortion Low voltage operation Low current consumption High gain Low distortion (ACP) Reduction of Parasitic oscillation Input and output internal matching circuit Package +3.V typ. 195mA P OUT =21dBm 32dB -6dBc P OUT =21dBm SSOP14 (Package size: 5.x6.4x1.25mm) PIN CONFIGURATION V Type (Top View) Pin connection 1. RFIN VGG VCONT VGG2 8. RFOUT 9.. VDD VDD

2 ABSOLUTE MAXIMUM RATINGS (T a =+25 C, Z s =Z l =5? ) PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V DD1, V DD2 V GG1, V GG2 =-.9V 6 V Gate Voltage V GG1, V GG2 V DD1, V DD2 =3.V -4 V Gain Control Voltage V CONT V DD1, V DD2 =3.V -4 V Input Power P IN V DD1, V DD2 =3.V, V GG1, V GG2 =-.9V 3 dbm Power Dissipation P D At on PCB board 6 mw Operating Temperature T opr -3~+85 C Storage Temperature T stg -4~+15 C ELECTRICAL CHARACTERISTICS (T a =+25 C, Z s =Z l =5? ) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq V DD1, 2 =3.V GHz Drain Voltage V DD1, V Gate Voltage V GG1, 2 V DD1, 2 =3.V, I idle =18mA V Idle Current *1 I idle V DD1, 2 =3.V, No RF Signal ma Operating Current *1 I DD V DD1, 2 =3.V, P OUT =21dBm ma Gate Current *2 I GG V DD1, 2 =3.V, P OUT =21dBm ua Gain Control Terminal Current I CONT V DD1, 2 =3.V, P OUT =21dBm -2.<V CONT <.V ua Gain Control Voltage V CONT V Small Signal Gain Gain V DD1, 2 =3.V, I idle =18mA db Gain Flatness G flat V DD1, 2 =3.V, I idle =18mA.5 1. db Gain Control Range Pout at 1dB Compression point Adjacent Channel Leakage Power 1 Adjacent Channel Leakage Power 2 G CONT V CONT =-2~V, V DD1, 2 =3.V I idle =18mA db P -1dB V DD1, 2 =3.V dbm 1 2 V DD1, 2 =3.V, P OUT =21dBm offset=6khz, P IN ; π/4 DQPSK V DD1, 2 =3.V, P OUT =21dBm offset=9khz, P IN ; π/4 DQPSK dbc dbc Harmonics P SP V DD1, 2 =3.V, P OUT =21dBm dbc Input VSWR VSWR i V DD1, 2 =3.V Load VSWR Tolerance - *1: VDD1 Terminal VDD2 Terminal Total Current *2: VGG1 Terminal VGG2 Terminal Total Current V DD1, 2 =3.V, P OUT =21dBm Load VSWR=4:1, All Phase Parasitic Oscillation for Fundamental Signal Level : <-6dBc = - 2 -

3 TYPICAL CHARACTERISTICS Gain vs. Frequency vs. Control Voltage 4 =3.V, I DD =18mA, T a -5 vs. Operating Current vs. V DD (P out =21dBm, V cont =V, f=1.9ghz, T a 3 V CONT =V -55 Gain (db) 2-1.V (d Bc) acp -6 Pacp(dBc) P V =2.9V DD 3.V -1.4V V 3.3V 5.V Frequency f (GHz) Operating Current I DD (ma) 26 Output Power vs. Input Power vs. Control Voltage =3.V, I idle =18mA, f=1.9ghz, T a 24 V CONT =V -1V -1.2V Output Power P out (dbm) V Input Power P (dbm) in vs. Input Power vs. Control Voltage -2 =3.V, I idle =18mA, f=1.9ghz, T a -3-4 V CONT =V -1V (dbc) V V Input Power P in (dbm) - 3 -

4 TYPICAL CHARACTERISTICS Gain, P acp vs. Ambient Temperature (V =3.V, V =V, I =18mA, P =21dBm, f=1.9ghz) DD cont idle out Gain Gain (db) 32-6 P acp (dbc) Ambient Temperature a T( o C) Operating Current, P acp vs. Control Voltage (V =3.V, I =18mA, f=1.9ghz, P =-11dBm, T DD idle in a 25-2 Operating Current vs. Ambient Temperature =3.V, V cont =V, I idle =18mA, P out =21dBm, f=1.9ghz) 19 Operating Current I DD (ma) 2 15 I DD -4-6 (dbc) Operating Current I DD (ma) Control Voltage V CONT (V) Ambient Temperature T a ( o C) 5 Gain vs PHS Band Frequency vs. Control Voltage =3.V, I DD =18mA, T a Gain, Operating Current vs. V DD (V cont =V, I idle =18mA@V DD =3.6V, P out =21dBm, f=1.9ghz, T a Gain (db) V CONT =V -1.V -1.4V Gain (db) I DD Operatin Current I DD (ma) Frequency f (GHz) Gain Drain Voltage V DD (V) - 4 -

5 TYPICAL CHARACTERISTICS Output Power,Total Current vs. Input Power Output Power P out (dbm) ( V DD2,3 =3V, V CONT =V, f=1.9ghz, T a Output idle =8mA 6mA 4mA 2mA Total idle =8mA 6mA 4mA 2mA Total Current (ma) Output Power P out (dbm) Output Power, P.A.E. vs. Input Power ( V DD2,3 =3V, V CONT =V, f=1.9ghz, T a =25 o C ) Output idle =8mA 6mA 4mA 2mA idle =8mA 6mA 4mA 2mA Power Added Efficiency (%) Input Power P (dbm) in Input Power P (dbm) in 2 S 11, S 22 vs. Frequency =3.V, I DD =18mA, V cont =V, T a S 11, S 22 (db) - S 22 S Frequency f (GHz) All adjacent channel leakage power used in these evaluations are those of 6kHz offset from fundamental wave at PHS operating condition(? /4QPSK moduration) - 5 -

6 RECOMMENDED CIRCUIT RFin 1 RFin VGG (-.5~-1.2V) <-2V = C2 3 4 VGG1 V DD C2 VDD (3.~5.V) Vcont (~-2V) 5 Vcont VDD2 L1 C2 C3 6 9 C3 C2 7 V GG 2 RFout 8 RFout RECOMMENDED PCB DESIGN : pf C2: 33pF C3: 1uF L1: 4.7nH 1uF PCB : FR4 t=.2mm CAPACITOR MURATA GRM39 Series INDUCTOR TAIYO-YUDEN HK168 Series 1uF 4.7uF The reflow method is recommended for this device to attach on PCB - 6 -

7 APPLICATION CIRCUIT (NEGATIVE VOLTAGE GENERATOR) +3.V -3.V 8 1 NJU766 - uf + kωtrimmer Resistance (7kΩ) (3kΩ) VGG (-.9V Typ.) + - uf +V 1MΩ VCONT (~+2V) 1MΩ 5kΩ NJU out VCONT (~-2V) -V - 7 -

8 PACKAGE OUTLINE (SSOP14) ~ ±.2 6.4± ± M 1.15±.1.5± MAX ±.1 Lead material Lead surface finish Molding material UNIT Weight : Copper : Solder plating : Epoxy resin : mm : 66mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights

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