DISCONTINUED. Preliminary. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth and a/b/g DESCRIPTION FEATURES APPLICATIONS

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1 μpg243tz GaAs Integrated Circuit SP3T Switch for Bluetooth and 82.a/b/g DESCRIPTION Preliminary Data Sheet The μpg243tz is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate at frequencies from.5 to. GHz, with low insertion loss and high isolation. This device is housed in a 8-pin plastic TSON (Thin Small Out-line Non-leaded) package and is suitable for highdensity surface mounting. FEATURES Switch Control voltage : V cont (H) = 3. V TYP., V cont (L) = V TYP. Low insertion loss : L ins =.55 db f = 2.5 GHz : L ins =.5 db f =. GHz High isolation : ISL = 28 db f = 2.5 GHz : ISL = 25 db f =. GHz Handling power : P in (. db) = +28. dbm V cont (H) = 3. V, V cont (L) = V High-density surface mounting : 8-pin plastic TSON package ( mm) APPLICATIONS Bluetooth and IEEE82.a/b/g etc. ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form μpg243tz-e2 μpg243tz-e2-a 8-pin plastic GL Embossed tape 8 mm wide TSON Pin, 8 face the perforation side of the tape (Pb-Free) Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μpg243tz-a CAUTION A Business Partner of Renesas Electronics Corporation. R9DS3EJ Rev.. Oct 24, 2 Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. R9DS3EJ Oct 24, 2 Rev.. Page of 3

2 μpg243tz PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) GL TRUTH TABLE RFC 8 NC 7 2 Vcont 3 RF 5 4 (Top View) RF3 8 Vcont3 7 Vcont2 RF (Bottom View) Pin No. V cont V cont 2 V cont 3 RFC RF RFC RF2 RFC RF3 High Low Low ON OFF OFF Low High Low OFF ON OFF Low Low High OFF OFF ON Pin Name RFC 2 NC Note 3 V cont 4 RF 5 RF2 V cont 2 7 V cont 3 8 RF3 Note: Non-Connection Remark Exposed pad : GND ABSOLUTE MAXIMUM RATINGS (T A = +25 C, unless otherwise specified) Parameter Symbol Ratings Unit Switch Control Voltage V cont +. Note V Input Power (V cont (H) = 3. V) P in +32 dbm Operating Ambient Temperature T A 45 to +85 C Storage Temperature T stg 55 to +5 C Note: V cont (H) V cont (L). V RECOMMENDED OPERATING RANGE (T A = +25 C) Parameter Symbol MIN. TYP. MAX. Unit Operating Frequency f.5. GHz Switch Control Voltage (H) V cont (H) V Switch Control Voltage (L) V cont (L).2.2 V Control Voltage Difference (H).. V Control Voltage Difference (L) ΔV cont (H) ΔV cont (L) Note 2.. V Notes:. ΔV cont (H) is a difference between the maximum and the minimum control voltages among V cont (H), V cont 2 (H) and V cont 3 (H). 2. ΔV cont (L) is a difference between the maximum and the minimum control voltages among V cont (L), V cont 2 (L) and V cont 3 (L). R9DS3EJ Oct 24, 2 Rev.. Page 2 of 3

3 μpg243tz ELECTRICAL CHARACTERISTICS (T A = +25 C, V cont (H) = 3. V, V cont (L) = V, Z O = 5 Ω, DC blocking capacitors = 8 pf, unless otherwise specified) Parameter Symbol Path Test Conditions MIN. TYP. MAX. Unit Insertion Loss Lins RFC to f =.5 to. GHz.45. db Isolation Return Loss ISL RL RF, 2, 3 RFC to RF, 2, 3 f =. to 2. GHz.45. db f = 2. to 2.5 GHz.55.7 db f = 2.5 to 4.9 GHz..8 db f = 4.9 to. GHz.5.9 db f =.5 to. GHz f =. to 2. GHz db db ( OFF) f = 2. to 2.5 GHz db f = 2.5 to 4.9 GHz db f = 4.9 to. GHz 2 25 db f =.5 to. GHz f =. to 2. GHz 23 db 23 db f = 2. to 2.5 GHz 23 db f = 2.5 to 4.9 GHz 23 db f = 4.9 to. GHz 23 db. db Loss Compression P in (. db) RFC to f = 2.5 GHz dbm Input Power Note 2 RF, 2, 3 f =. GHz dbm db Loss Compression P in ( db) RFC to f = 2.5 GHz dbm Input Power Note 3 RF, 2, 3 f =. GHz dbm Input 3rd Order Intercept Point IIP 3 f = 2.5 GHz, 2 tone, 5 MHz spacing 2nd Harmonics 2f f = 2.5 GHz, P in = +22 dbm 3rd Harmonics 3f f = 2.5 GHz, P in = +22 dbm 53 dbm 75 dbc 75 dbc Switch Control Current I cont No RF input. 5. μa Switch Control Speed t SW 5% CTL to 9/% RF 5 3 ns Notes:. DC blocking capacitors = 5 pf at f =.5 to 2. GHz 2. P in (. db) is the measured input power level when the insertion loss increases. db more than that of the linear range. 3. P in ( db) is the measured input power level when the insertion loss increases db more than that of the linear range. CAUTION It is necessary to use DC blocking capacitors with this device. R9DS3EJ Oct 24, 2 Rev.. Page 3 of 3

4 μpg243tz ELECTRICAL CHARACTERISTICS 2 (T A = +25 C, V cont (H) =.8 V, V cont (L) = V, Z O = 5 Ω, DC blocking capacitors = 8 pf, unless otherwise specified) Parameter Symbol Path Test Conditions MIN. TYP. MAX. Unit Insertion Loss Lins RFC to f =.5 to. GHz.45. db Isolation Return Loss ISL RL RF, 2, 3 RFC to RF, 2, 3 f =. to 2. GHz.45. db f = 2. to 2.5 GHz.55.7 db f = 2.5 to 4.9 GHz..8 db f = 4.9 to. GHz.5.9 db f =.5 to. GHz f =. to 2. GHz db db ( OFF) f = 2. to 2.5 GHz db f = 2.5 to 4.9 GHz db f = 4.9 to. GHz 2 25 db f =.5 to. GHz f =. to 2. GHz 23 db 23 db f = 2. to 2.5 GHz 23 db f = 2.5 to 4.9 GHz 23 db f = 4.9 to. GHz 23 db. db Loss Compression P in (. db) RFC to f = 2.5 GHz dbm Input Power Note 2 RF, 2, 3 f =. GHz dbm db Loss Compression P in ( db) RFC to f = 2.5 GHz dbm Input Power Note 3 RF, 2, 3 f =. GHz dbm Input 3rd Order Intercept Point IIP 3 f = 2.5 GHz, 2 tone, 5 MHz spacing 2nd Harmonics 2f f = 2.5 GHz, P in = +7 dbm 3rd Harmonics 3f f = 2.5 GHz, P in = +7 dbm 5 dbm 75 dbc 75 dbc Switch Control Current I cont No RF input. 5. μa Switch Control Speed t SW 5% CTL to 9/% RF ns Notes:. DC blocking capacitors = 5 pf at f =.5 to 2. GHz 2. P in (. db) is the measured input power level when the insertion loss increases. db more than that of the linear range. 3. P in ( db) is the measured input power level when the insertion loss increases db more than that of the linear range. CAUTION It is necessary to use DC blocking capacitors with this device. R9DS3EJ Oct 24, 2 Rev.. Page 4 of 3

5 μpg243tz EVALUATION CIRCUIT Note: RFC C Note Vcont pf C pf pf RF 4 5 RF2 C C It is recommended to connect the pin directly to the ground, or not to connect the pin to anything. Remarks C :.5 to 2. GHz 5 pf : 2. to. GHz 8 pf The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. APPLICATION INFORMATION LESD CB C B are DC blocking capacitors external to the device. A value of 8 pf is sufficient for operation from 2 GHz to GHz bands. The value may be tailored to provide specific electrical responses. The RF ground connections should be kept as short as possible and connected to directly to a good RF ground for best performance. L ESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the antenna. Switch CB CB RF3 Vcont3 Vcont2 R9DS3EJ Oct 24, 2 Rev.. Page 5 of 3

6 μpg243tz TYPICAL CHARACTERISTICS (V cont (H) = 3. V, V cont (L) = V, Z O = 5 Ω, DC blocking capacitors = 8 pf, unless otherwise specified) Insertion Loss Lins (db) Isolation ISL (db) Return Loss (RFC) RL (db) RFC-RF/RF2/RF3 INSERTION LOSS vs. FREQUENCY Vcont (H) =.8-3. V.2 DC blocking capacitors = 5 pf pf Frequency f (GHz) RFC-RF/RF2/RF3 ISOLATION vs. FREQUENCY DC blocking capacitors = 5 pf Vcont (H) =.8-3. V RFC-RF RFC-RF3 (RF2 on) RFC-RF2 RFC-RF3 (RF on) Frequency f (GHz) RETURN LOSS (RFC) vs. FREQUENCY DC blocking capacitors = 5 pf Vcont (H) =.8-3. V RF on RF2 on RF3 on Frequency f (GHz) Isolation ISL (db) Return Loss (RFC) RL (db) RFC-RF/RF2/RF3 ISOLATION vs. FREQUENCY DC blocking capacitors = 8 pf Vcont (H) =.8-3. V RFC-RF 2 RFC-RF3 (RF2 on) 3 4 RFC-RF2 RFC-RF3 (RF on) Frequency f (GHz) RETURN LOSS (RFC) vs. FREQUENCY DC blocking capacitors = 8 pf Vcont (H) =.8-3. V RF2 on RF on Frequency f (GHz) RF3 on Remark The graphs indicate nominal characteristics. R9DS3EJ Oct 24, 2 Rev.. Page of 3

7 μpg243tz Return Loss (RF, 2, 3) RL, 2, 3 (db) Insertion Loss Lins (db) Isolation ISL (db) RETURN LOSS (RF, 2, 3) vs. FREQUENCY DC blocking capacitors = 5 pf Vcont (H) =.8-3. V RF on RF2 on RF3 on Frequency f (GHz) RFC-RF/RF2/RF3 INSERTION LOSS vs. SWITCH CONTROL VOLTAGE (H) f = 2.5 GHz GHz RFC-RF/RF2/RF3 ISOLATION vs. SWITCH CONTROL VOLTAGE (H) RFC-RF3 (RF on) RFC-RF2 f = 2.5 GHz RFC-RF / RF3 (RF2 on) Return Loss (RF, 2, 3) RL, 2, 3 (db) Isolation ISL (db) RETURN LOSS (RF, 2, 3) vs. FREQUENCY DC blocking capacitors = 8 pf Vcont (H) =.8-3. V RF2 on RF3 on 2 3 RF on Frequency f (GHz) RFC-RF/RF2/RF3 ISOLATION vs. SWITCH CONTROL VOLTAGE (H) RFC-RF RFC-RF2 f =. GHz RFC-RF3 (RF2 on) RFC-RF3 (RF on) Remark The graphs indicate nominal characteristics. R9DS3EJ Oct 24, 2 Rev.. Page 7 of 3

8 μpg243tz Return Loss (RFC) RL (db) Return Loss (RF, 2, 3) RL, 2, 3 (db) Insertion Loss Lins (db) RETURN LOSS (RFC) vs. SWITCH CONTROL VOLTAGE (H) f = 2.5 GHz RF2 on RF on RF3 on RETURN LOSS (RF, 2, 3) vs. SWITCH CONTROL VOLTAGE (H) f = 2.5 GHz RF2 on RF3 on RF on RFC-RF/RF2/RF3 INSERTION LOSS, Icont vs. INPUT POWER Lins Vcont (H) = 3. V.5 f = 2.5 GHz Icont 3. V.8 V.8 V Input Power Pin (dbm) Switch Control Current Icont ( μ A) Return Loss (RFC) RL (db) Return Loss (RF, 2, 3) RL, 2, 3 (db) Insertion Loss Lins (db) RETURN LOSS (RFC) vs. SWITCH CONTROL VOLTAGE (H) f =. GHz RF2 on RF3 on RF on RETURN LOSS (RF, 2, 3) vs. SWITCH CONTROL VOLTAGE (H) f =. GHz RF2 on RF on RF3 on RFC-RF/RF2/RF3 INSERTION LOSS, Icont vs. INPUT POWER. f =. GHz Lins.5 Vcont (H) = 3. V V.8 V Input Power Pin (dbm) Remark The graphs indicate nominal characteristics. Icont 3. V Switch Control Current Icont ( μ A) R9DS3EJ Oct 24, 2 Rev.. Page 8 of 3

9 μpg243tz db Loss Compression Input Power Pin ( db) (dbm). db Loss Compression Input Power Pin (. db) (dbm) RFC-RF/RF2/RF3 Pin ( db), Pin (. db) vs. SWITCH CONTROL VOLTAGE (H) Pin ( db) Pin (. db) f = 2.5 GHz Remark The graphs indicate nominal characteristics. db Loss Compression Input Power Pin ( db) (dbm). db Loss Compression Input Power Pin (. db) (dbm) RFC-RF/RF2/RF3 Pin ( db), Pin (. db) vs. SWITCH CONTROL VOLTAGE (H) Pin ( db) Pin (. db) f =. GHz R9DS3EJ Oct 24, 2 Rev.. Page 9 of 3

10 μpg243tz MOUNTING PAD LAYOUT DIMENSIONS 8-PIN PLASTIC TSON (UNIT: mm) Remark The mounting pad layout in this document is for reference only. When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder bridge and so on, in order to optimize the design. R9DS3EJ Oct 24, 2 Rev.. Page of 3

11 μpg243tz PACKAGE DIMENSIONS 8-PIN PLASTIC TSON (UNIT: mm).5±. (Top View).5±. Remark A > ( ): Reference value (Side View) ±..8 MIN. A A (Bottom View).3±.7 (.24).7±. (C.5).2±..2±. R9DS3EJ Oct 24, 2 Rev.. Page of 3

12 μpg243tz RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) : 2 C or below Time at peak temperature : seconds or less Time at temperature of 22 C or higher : seconds or less Preheating time at 2 to 8 C : 2±3 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) :.2% (Wt.) or below Partial Heating Peak temperature (terminal temperature) : 35 C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) :.2% (Wt.) or below CAUTION Do not use different soldering methods together (except for partial heating). Condition Symbol IR2 HS35 R9DS3EJ Oct 24, 2 Rev.. Page 2 of 3

13 μpg243tz Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below.. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. Do not burn, destroy, cut, crush, or chemically dissolve the product. Do not lick the product or in any way allow it to enter the mouth. R9DS3EJ Oct 24, 2 Rev.. Page 3 of 3

14 Revision History μpg243tz Data Sheet Description Rev. Date Page Summary. Oct 24, 2 - First edition issued Bluetooth is a registered trademark owned by Bluetooth SIG, Inc., U.S.A. All trademarks and registered trademarks are the property of their respective owners. C -