HIGH POWER SP4T SWITCH GaAs MMIC
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- Kory Hines
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1 NJG189ME7 HIGH POWER SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG189ME7 is a high power SP4T switch MMIC suitable for LTE-U / LAA, WLAN, and LTE applications. This switch features very low insertion loss and high isolation up to 6GHz and excellent linearity performance with 1.8 control voltage. This switch achieves high speed switching time for WLAN application. Integrated ESD protection device on each port achieves excellent ESD robustness. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. The small and thin EQFN18-E7 package is adopted. PACKAGE OUTLINE NJG189ME7 APPLICATIONS LTE-U / LAA, WLAN (82.11a/b/g/n/ac), LTE multi-mode applications General purpose switching applications FEATURES Low voltage logic control 1.35 to 5. Low insertion loss.4db 3.5GHz, P IN =+27dBm.5dB P IN =+27dBm High isolation 27dB P IN =+27dBm 25dB P IN =+27dBm 3dB 5.85GHz, P IN =+27dBm P -.1dB +32dBm min. High speed switching time 25ns typ. Small and thin package EQFN18-E7 (2.x2.x.397mm typ.) RoHS compliant and Halogen Free, MSL1 PIN CONFIGURATION (TOP IEW) GND CTL1 CTL2 GND GND 15 DECODER 9 P GND 17 7 P GND GND PC GND GND GND P2 GND P1 Pin connection 1. GND 1. GND 2. GND PC 12. CTL2 4. GND 13. CTL1 5. GND 14. GND 6. P1 15. GND 7. GND 16. P4 8. P2 17. GND 9. GND 18. P3 Exposed PAD: GND TRUTH TABLE H =, L = CTL1 CTL2 Path L L PC-P1 H L PC-P2 L H PC-P3 H H PC-P4 NOTE: Please note that any information on this datasheet will be subject to change. er
2 NJG189ME7 ABSOLUTE MAXIMUM RATINGS (T a =+25 C, Z s =Z l =5 ) PARAMETER SYMBOL CONDITIONS RATINGS UNITS RF Input Power P IN =2.75, CTL =/ dbm Supply oltage terminal 5. Control oltage CTL CTL1, CTL2 terminal 5. Power Dissipation P D Four-layer FR4 PCB with through-hole (11.5x114.5mm), T j =15 C 14 mw Operating Temp. T opr -4 to +15 C Storage Temp. T stg 5 to +15 C ELECTRICAL CHARACTERISTICS 1 (DC) (General conditions: T a =+25 C, =2.75, =1.8, =, with application circuit) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Supply oltage Terminal Operating Current I No RF input A Control oltage (LOW) CTL1, CTL2 Terminal -.45 Control oltage (HIGH) CTL1, CTL2 Terminal Control Current I CTL = A - 2 -
3 NJG189ME7 ELECTRICAL CHARACTERISTICS 2 (RF) (General conditions: T a =+25 C, Z s =Z l =5, =2.75, =1.8, =, with application circuit) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Insertion Loss 1 LOSS1 f=.7ghz, P IN =+27dBm db Insertion Loss 2 LOSS2 f=2.ghz, P IN =+27dBm db Insertion Loss 3 LOSS3 f=2.7ghz, P IN =+27dBm db Insertion Loss 4 LOSS4 f=3.5ghz, P IN =+27dBm db Insertion Loss 5 LOSS5 f=5.85ghz, P IN =+27dBm db Isolation 1 ISL1 f=.7ghz, P IN =+27dBm db Isolation 2 ISL2 f=2.ghz, P IN =+27dBm db Isolation 3 ISL3 f=2.7ghz, P IN =+27dBm db Isolation 4 ISL4 f=3.5ghz, P IN =+27dBm db Isolation 5 ISL5 f=5.85ghz, P IN =+27dBm PC-Pn * Pm-Pn * db Input Power at.1 db Compression Point 2nd Harmonics 1 2nd Harmonics 2 3rd Harmonics 1 3rd Harmonics 2 4th Harmonics Input 2 nd order intercept point Input 3 rd order intercept point P -.1dB f=5.85ghz dbm 2fo(1) 2fo(2) 3fo(1) 3fo(2) 4fo IIP2 IIP3 f=5.18ghz, 5.85GHz, P IN =+27dBm f=2.69ghz, P IN =dbm f=5.18ghz, 5.85GHz, P IN =+27dBm f=1.732ghz, 1.91GHz, P IN =dbm f=5.18ghz, 5.85GHz, P IN =+27dBm f= ghz, f meas =5.17GHz, P IN =+1dBm each f= ghz, f meas =5.82 GHz, P IN =+1dBm each dbc dbc dbc dbc dbc dbm dbm SWR1 SWR1 On-state ports, f=2.7ghz SWR2 SWR2 On-state ports, f=5.85ghz Switching time T SW 5% CTL to 1/9% RF ns *1: Pn=P1, P2, P3, P4 *2: Pm=P1, P2, P3, P4. Pn=P1, P2, P3, P4. m n - 3 -
4 NJG189ME7 TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 GND 2 GND 3 PC 4 GND 5 GND 6 P1 7 GND 8 P2 9 GND 1 GND CTL2 13 CTL1 14 GND 15 GND 16 P4 17 GND 18 P3 Common RF terminal. No DC blocking capacitor is required for this port unless DC is biased externally. RF terminal. No DC blocking capacitor is required for this port unless DC is biased externally. RF terminal. No DC blocking capacitor is required for this port unless DC is biased externally. Positive voltage supply terminal. The positive voltage (+2.5 to +5) has to be supplied. Please connect a bypass capacitor with ground plane for excellent RF performance. Control signal input terminal. This terminal is set to High-Level (+1.35 to +5.) or Low-Level ( to +.45). Control signal input terminal. This terminal is set to High-Level (+1.35 to +5.) or Low-Level ( to +.45). RF terminal. No DC blocking capacitor is required for this port unless DC is biased externally. RF terminal. No DC blocking capacitor is required for this port unless DC is biased externally. Exposed Pad GND Ground pad of IC bottom side. Please connect this pad with ground plane as close as - 4 -
5 NJG189ME7 ELECTRICAL CHARACTERISTICS (With application circuit, loss of external circuit are excluded.) LOSS, ISL vs Frequency LOSS, ISL vs Frequency. (PC-P1 ON, =2.75, =, =1.8). (PC-P2 ON, =2.75, =, =1.8) PC-P1 Insertion Loss (db) PC-P1 LOSS PC-P2 ISL PC-P3 ISL PC-P4 ISL PC-P2 Insertion Loss (db) PC-P2 LOSS PC-P1 ISL PC-P3 ISL PC-P4 ISL LOSS, ISL vs Frequency LOSS, ISL vs Frequency. (PC-P3 ON, =2.75, =, =1.8). (PC-P4 ON, =2.75, =, =1.8) PC-P3 Insertion Loss (db) PC-P3 LOSS PC-P1 ISL PC-P2 ISL PC-P4 ISL PC-P4 Insertion Loss (db) PC-P4 LOSS PC-P1 ISL PC-P2 ISL PC-P3 ISL ISL vs Frequency ISL vs Frequency (PC-P1 ON, =2.75, =, =1.8) (PC-P2 ON, =2.75, =, =1.8) -1 P1-P2 ISL P1-P3 ISL P1-P4 ISL -1 P1-P2 ISL P2-P3 ISL P2-P4 ISL
6 NJG189ME7 ELECTRICAL CHARACTERISTICS (With application circuit, loss of external circuit are excluded.) ISL vs Frequency ISL vs Frequency (PC-P3 ON, =2.75, =, =1.8) (PC-P4 ON, =2.75, =, =1.8) -1 P1-P3 ISL P2-P3 ISL P3-P4 ISL -1 P1-P4 ISL P2-P4 ISL P3-P4 ISL SWR vs Frequency ( =2.75, =, =1.8) PC-P1 ON PC-P2 ON PC-P3 ON PC-P4 ON SWR vs Frequency ( =2.75, =, =1.8) PC-P1 ON PC-P2 ON PC-P3 ON PC-P4 ON SWR: PC port SWR: Pn port I vs (No RF input, PC-P1 ON, =, =1.8) 12 I vs CTL CTL (No RF input, PC-P1 ON, =2.75) 4 1 I ( A) 3 2 I CTL ( A) () CTL () - 6 -
7 NJG189ME7 ELECTRICAL CHARACTERISTICS (With application circuit, loss of external circuit are excluded.) Output Power, I vs Input Power Loss, ISL vs Input Power Output Power (dbm) (PC-P1 ON, =, =1.8, f=5.85ghz) =2.5 =2.5_P OUT =2.75 =2.75_P OUT =3.5_P OUT =5._P OUT = Input Power (dbm) Operating Current I ( A) PC-P1 Insertion Loss (db) (PC-P1 ON, =, =1.8, f=5.85ghz) =2.5 =2.5_Loss =2.75_Loss =2.75 =3.5_Loss =3.5 =5._Loss = Input Power (dbm) PC-P2 Switching Time (PC-P1/P2 path, =2.75, =, =1.8) CTL1 Arb. Unit 24ns 194ns P2 Port Time (1 s/div) - 7 -
8 NJG189ME7 ELECTRICAL CHARACTERISTICS (With application circuit, loss of external circuit are excluded.) Loss, ISL vs Temperature (PC-P1 ON, =, =1.8, f=.7ghz, P =27dBm) IN. Loss, ISL vs Temperature (PC-P1 ON, =, =1.8, f=2.ghz, P =27dBm) IN. PC-P1 Insertion Loss (db) =2.5 =2.5_L =2.75 =2.75_L =3.5_L =3.5 =5._L = PC-P2 PC-P1 Insertion Loss (db) =2.5 =2.75 =2.5_L =2.75_L =3.5 =3.5_L =5._L PC-P Loss, ISL vs Temperature (PC-P1 ON, =, =1.8, f=2.7ghz, P =27dBm) IN. Loss, ISL vs Temperature (PC-P1 ON, =, =1.8, f=3.5ghz, P =27dBm) IN. PC-P1 Insertion Loss (db) =2.5 =2.75 =2.5_L =2.75_L =3.5 =3.5_L =5._L PC-P2 PC-P1 Insertion Loss (db) =2.5 =2.75 =2.5_L =2.75_L =3.5 =3.5_L =5._L PC-P Loss, ISL vs Temperature (PC-P1 ON, =, =1.8, f=5.85ghz, P =27dBm) IN. PC-P1 Insertion Loss (db) =2.5 =2.5_L =2.75 =2.75_L =3.5_L =5._L = PC-P
9 NJG189ME7 ELECTRICAL CHARACTERISTICS (With application circuit, loss of external circuit are excluded.) 2. SWR vs Temperature (PC-P1 ON, PC Port, =, =1.8, f=2.7ghz) 2. SWR vs Temperature (PC-P1 ON, P1 Port, =, =1.8, f=2.7ghz) 1.9 = =2.5 PC Port SWR =2.75 =3.5 =5. P1 Port SWR =2.75 =3.5 = SWR vs Temperature (PC-P1 ON, PC Port, =, =1.8, f=5.85ghz) 2. SWR vs Temperature (PC-P1 ON, P1 Port, =, =1.8, f=5.85ghz) = =2.5 PC Port SWR =2.75 =3.5 =5. P1 Port SWR =2.75 =3.5 = P -.1dB vs Temperature 34 (PC-P1 ON, =, =1.8, f=5.85ghz) 32 Absolute Maximum Ratings: 33dBm P -.1dB (dbm) =2.5 =2.75 =3.5 =
10 NJG189ME7 ELECTRICAL CHARACTERISTICS (With application circuit, loss of external circuit are excluded.) Operating Current ( A) Operating Current vs Temperature (PC-P1 ON, =, =1.8) =2.5 =2.75 =3.5 = Control Current ( A) Control Current vs Temperature (PC-P2 ON, =2.75) =1.5 =2. =2.75 =3.5 = Switching Time(rise) vs Temperature 6 (PC-P1/P2 path, P2 port, =, =1.8) Switching Time(fall) vs Temperature 6 (PC-P1/P2 path, P2 port, =, =1.8) Switching Time (ns) =2.5 =2.75 =3.5 =5. Switching Time (ns) =2.5 =2.75 =3.5 =
11 NJG189ME7 APPLICATION CIRCUIT (TOP IEW) C1 CTL1 CTL DECODER 9 P P P P L1 PC Note: [1] No DC blocking capacitors are required on all RF ports, unless DC is biased externally. [2] The inductor L1 is optional in order to achieve enhancing ESD protection level. L1 is also recommended in order to keep the DC bias level of each RF port at ground level tightly. PARTS LIST No. Parameters Note C1 1pF MURATA (GRM15) L1 68nH TAIYO-YUDEN (HK15)
12 NJG189ME7 PCB LAYOUT P4 GND (TOP IEW) CTL2 CTL1 GND P2 PCB: FR-4, t=.2mm Capacitor size: 15 Strip line width:.4mm PCB size: 26x26mm 2 C1 Losses of PCB and connectors, Ta=+25 C Loss (db).7.16 P3 1pin mark L1* P PC * L1 is optional. <PCB LAYOUT GUIDELINE> (TOP EIW) PCB Package terminal Package outline Ground through hole Diameter =.2mm PRECAUTIONS [1] No DC block capacitors are required for RF ports unless DC is biased externally. When other device biased at certain voltage is connected to the NJG189ME7, a DC block capacitor is required between the device and this switch IC. This is because the each RF port of this switch is biased at ground level. [2] For avoiding the degradation of RF performance, the bypass capacitor (C1) should be placed as close as possible to terminal. [3] For good RF performance, all GND terminals are must be connected to PCB ground plane of substrate, and through holes for GND should be placed near the IC. [4] Please connect Exposed PAD to PCB ground plane of substrate, and through holes for ground should be placed under the IC
13 RECOMMENDED FOOTPRINT PATTERN (EQFN18-E7 PACKAGE REFERENCE) : Land : Mask (Open area) *Metal mask thickness: 1 m : Resist (Open area) NJG189ME7 PKG: 2.x2.mm 2 Pin pitch:.4mm Unit: mm Detail A
14 NJG189ME7 PACKAGE OUTLINE (EQFN18-E7) Terminal Treat Board Molding Material Weight Unit : SnBi : Copper : Epoxy resin : 5.mg : mm Exposed PAD Ground connection is required. Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages
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Typical Applications This switch is suitable for usage in 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Functional Diagram Features Broadband Performance:
More informationFeatures OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
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v00.1213 Typical Applications Features The HMC241AQS16 & HMC241AQS16E are ideal for: Base Stations & Portable Wireless CATV / DBS Wireless Local Loop Test Equipment Functional Diagram RoHS Compliant Product
More informationFeatures. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications This switch is suitable for usage in 50- Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Features Broadband Performance: DC - 8 GHz High Isolation:
More information50Ω TERMINATION TYPE HIGH POWER SPDT SWITCH. Part Number Order Number Package Marking Description
RF SWITCH CG2176X3 50Ω TERMINATION TYPE HIGH POWER SPDT SWITCH DESCRIPTION The CG2176X3 is a phemt GaAs MMIC 50Ω termination type high power SPDT (Single Pole Double Throw) switch which was developed for
More informationFeatures OBSOLETE. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications This switch is suitable for usage in 50- Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Functional Diagram Features Broadband Performance:
More informationPreliminary Datasheet
Product Description The is a reflective SPDT RF switch that can be used in high power and good performance WLAN 802.11 a/b/g/n/ac/ax, DOCSIS 3.0/3.1 and Wireless Communication applications. This device
More informationGHz RF Front-End Module. o C
Functional Block Diagram Features 4 High Efficient Power Amplifier: 41% at Pout= 23dBm -PA P-1dB: +21dBM Typical @ +3.3V-PA Low Noise Amplifier (NF typical 1.8dB)-LNA Low Insertion Loss:0.4dB@ 2.45GHz-Switch
More informationPreliminary Datasheet
Product Description The is an absorptive SPDT 50Ω matched RF switch supporting bandwidths up to 6GHz. Its high linearity performance across the temperature range makes it ideally suited for use in 3G/4G/5G
More informationDC-20 GHz SP4T Non-reflective Switch
Features Functional Block Diagram Low loss broadband performance High isolation Non-reflective design Integrated 2:4 TTL decoder Small die size 2 3 RF1 RF2 A 4 Description The CMD23 is a broadband MMIC
More informationOBSOLETE. = +25 C, With Vdd = +5V & Vctl = 0/+5V. Parameter Frequency Min. Typ. Max. Units DC - 4 GHz GHz Attenuation Range DC - 10 GHz 10 db
Typical Applications The HMC8LP3E is ideal for: Test Equipment and Sensors ISM, MMDS, WLAN, WiMAX, WiBro Microwave Radio & VSAT Cellular Infrastructure Functional Diagram HMC8LP3E v.11 1 GaAs MMIC 1-BIT
More informationPreliminary Datasheet
Product Description The is a reflective SPDT RF switch that can be used in high power and good performance WLAN 802.11 a/b/g/n/ac/ax, DOCSIS 3.0/3.1 and Wireless Communication applications. This device
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Typical Applications 1 LSB GaAs MMIC 3-BIT DIGITAL Features The HMC468LP3 / HMC468LP3E is ideal for: Cellular; UMTS/3G Infrastructure Fixed Wireless & WLL Microwave Radio & VSAT Test Equipment Functional
More informationFeatures. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.
v.6.5 LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,. - 33 GHz Typical Applications Features The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications
More informationOBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description
v1.5 LO AMPLIFIER,.5-2.7 GHz Typical Applications The is ideal for: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM & Fixed Wireless Functional Diagram Features Input IP3: +28 dbm Low
More informationParameter Min Typ Max Units Frequency Range
Features Low loss broadband performance High isolation Fast switching speed Non-reflective design - RF1 and RF2 Small die size Description Functional Block Diagram RF1 RF2 1 2 The CMD204 die is a general
More informationRF1. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Low loss broadband performance High isolation Fast switching speed Reflective design Small die size Description RFC 1 The CMD230 is a general purpose broadband high isolation
More informationFeatures. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.
v.91.5 db LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,.1-33 GHz Typical Applications The HMC941LP4 / HMC941LP4E is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar &
More informationFeatures. = +25 C, Vdd = +7V, Idd = 1340 ma [1]
Typical Applications The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifi er for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Space Features Saturated
More informationBSW MHz-6000MHz High Linearity Reflective SPDT RF switch. Product Description. Package Type. Device Features - Common.
Product Description The BSW6321 is a reflective SPDT RF switch that can be used in high power and good performance WiMAX 802.16, WLAN 802.11 a/b/g/n/ac/ax and DOCSIS 3.0/3.1 applications. This device is
More informationParameter Min Typ Max Units Frequency Range
Features Low loss broadband performance High isolation Fast switching speed Non-reflective design Small die size Functional Block Diagram B A 3 4 5 2 RFC A B 6 Description The CMD196 is a general purpose
More informationFeatures. Parameter Frequency Min. Typ. Max. Units. Return Loss Off State DC - 20 GHz 19 db
Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Hybrids Test Instrumentation SATCOM & Sensors Functional Diagram Features Broadband Performance: DC
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v6.89 HMC546MS8G / 546MS8GE GaAs MMIC 2W FAILSAFE SWITCH.2-2.2 GHz Typical Applications The HMC546MS8G(E) is ideal for: LNA Protection, WiMAX, WiBro Cellular/PCS/3G Infrastructure Private Mobile Radio
More informationOBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz. Attenuation Range DC - 3 GHz 31 db
5 Typical Applications The HMC47LP3(E) is ideal for: Cellular; UMTS/3G Infrastructure ISM, MMDS, WLAN, WiMAX Microwave Radio & VSAT Test Equipment and Sensors Functional Diagram HMC47LP3 / 47LP3E v4.118
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PRELIMINARY MSW2T-2030-192/MSW2T-2031-192/MSW2T-2032-192 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 50 MHz to 6 GHz Surface Mount SP2T Switch 5mm x 8mm x 2.5mm
More informationParameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.5 db
v..5 LSB GaAs MMIC 6-BIT DIGITAL Typical Applications The is ideal for: 3G Infrastructure & access points Cellular/3G, LTE & UMB WiMAX, WiBN & Fixed Wireless Test Equipment and Sensors GSM, WCDMA & TD-SCDMA
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Typical Applications The HMC245QS16 / HMC245QS16E is ideal for: Basestation Infrastructure CATV / DBS Wireless Local Loop Test Equipment Functional Diagram Features Low Insertion Loss:.5 @ 2. GHz Non-Refl
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S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over
More information= +25 C, with Vcc = +5V. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.
Typical Applications The is ideal for: Cellular/PCS/3G Infrastructure ISM, MMDS, WLAN, WiMAX, & WiBro Microwave Radio & VSAT Test Equipment and Sensors Functional Diagram Features.5 db LSB Steps to 31.5
More information= +25 C, With Vee = -5V & VCTL= 0/-5V
v.3.5db LSB GaAs MMIC 6-BIT DIGITAL Typical Applications Features The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave & VSAT Radios Military & Space Test Instrumentation
More informationParameter Frequency Min. Typ. Max. Units GHz GHz Attenuation Range GHz 31.5 db
v.37. db LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR,. - 8. GHz Typical Applications Features ATTENUATORS - SMT The HMCALP3E is ideal for: WLAN & Point-to-Multi-Point Fiber Optics & Broadband
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v2. Typical Applications The HMC486LP5(E) is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use Features Saturated Power: +33 dbm @ 2% PAE Output IP3:
More informationFeatures OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma
7 Typical Applications The HMC667LP2(E) is ideal for: WiMAX, WiBro & Fixed Wireless SDARS & WLAN Receivers Infrastructure & Repeaters Access Points Telematics & DMB Functional Diagram v2.11 Electrical
More informationFeatures OBSOLETE. = +5V in a 50 Ohm System. Parameter Frequency Min. Typ. Max. Units DC GHz DC GHz
Typical Applications The HMC252QS24 / HMC252QS24E is ideal for: Base Station CATV / DBS MMDS & WirelessLAN Test Equipment Functional Diagram Features Low Insertion Loss (2 GHz):.9 Single Positive Supply:
More informationFeatures. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain
Typical Applications Functional Diagram The HMC32LP3 / HMC32LP3E is ideal for basestation receivers: GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio HMC32LP3 / 32LP3E AMPLIFIER, 00-1000 MHz Features
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More informationFeatures. Return Loss (RF1, RF2) Off State GHz db. Input Power for 1 db Compression GHz dbm
POSITIVE CONTROL SWITCH, DC* - 6.0 GHz Typical Applications This switch is suitable for usage in 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 6.0 GHz Functional
More informationFeatures. = +25 C, With 0/-5V Control, 50 Ohm system
Typical Applications The HMC27AMS8GE is ideal for applications: CATV MMDS & WirelessLAN Wireless Local Loop Functional Diagram Features Broadband Performance: DC - 8 GHz Very High Isolation: 45 @ 6 GHz
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5 Typical Applications v8.98 HMC37QS16G / 37QS16GE 1 LSB GaAs MMIC 5-BIT DIGITAL Features The HMC37QS16G(E) is ideal for: Cellular PCS, ISM, MMDS Wireless Local Loop Functional Diagram 1 LSB Steps to 31
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Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications,
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MGA-4 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Avago Technologies MGA-4 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA) with
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Typical Applications This switch is suitable for usage in 50- Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 6.0 GHz Functional Diagram Features Broadband Performance:
More informationParameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz GHz Attenuation Range DC - 5.
5 Typical Applications HMC54LP3 / 54LP3E v.65 1 LSB GaAs MMIC 4-BIT DIGITAL Features The HMC54LP3 / HMC54LP3E is ideal for both RF and IF applications: Cellular Infrastructure ISM, MMDS, WLAN, WiMAX, WiBro
More informationOBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC - 5.
5 Typical Applications HMC54LP3 / 54LP3E v.65 1 LSB GaAs MMIC 4-BIT DIGITAL Features The HMC54LP3 / HMC54LP3E is ideal for both RF and IF applications: Cellular Infrastructure ISM, MMDS, WLAN, WiMAX, WiBro
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More informationFeatures OBSOLETE. = +25 C, Vctl = 0/+8 Vdc, 50 Ohm System. Parameter Frequency* Min. Typ. Max. Units Tx - RFC MHz db.
GaAs MMIC 1W T/R Typical Applications Features 1 The HMC446 / HMC446E is ideal for: ISM/Cellular Portables/Handsets Automotive Telematic Applications Mobile Radio Functional Diagram Low Insertion Loss:.6
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