SP5T SWITCH GaAs MMIC
|
|
- Blaze Fleming
- 5 years ago
- Views:
Transcription
1 SP5T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1667MD7 is a GaAS SP5T switch featured low insertion loss, high isolation and small size package, and suited for mobile terminal applications. The NJG1667MD7 switches a path between common RF port and five RF ports by three bit control signal from 1.3V of logical high voltage. In addition, this switch includes ESD protection circuits for good ESD tolerance. The NJG1667MD7 is available in a very small, lead-free, halogen-free, 1.6mm x 1.6mm x.397 mm, 14-pin EQFN14-D7 package. PACKAGE OUTLINE NJG1667MD7 APPLICATIONS Multi-mode LTE, UMTS, CDMA and GSM applications Receive system, RX path, and Diversity antenna applications Mobile phone, Tablet PC, Data card, Modem and Router applications FEATURES Low control voltage Low operating voltage Low insertion loss High ESD tolerance Small and thin package Lead -free and halogen-free V =+1.3V min =+2.~+4.5V.4 db P IN =23dBm.5 db P IN =23dBm.6 db P IN =23dBm On-chip ESD protection circuit EQFN14-D7 (package size: 1.6mm x 1.6mm x.397mm typ.) PIN CONFIGURATION (Top view) DECODER Pin connection 1. GND 8. GND 2. V 9. P1 3. P5 1. PC 4. GND 11. GND 5. P4 12. CTL3 6. P3 13. CTL2 7. P2 14. CTL TRUTH TABLE PATH CTL1 CTL2 CTL3 PC-P1 L H H PC-P2 L L H PC-P3 L L L PC-P4 L H L PC-P5 H X X "H" V, "L" V CTL(L), X Do not care. NOTE: The information on this datasheet is subject to change without notice Ver
2 ABSOLUTE MAXIMUM RATINGS (T a =+25 C, Z s =Z l =5Ω) PARAMETER SYMBOL CONDITIONS RATINGS UNITS RF input power P IN, V CTL =V / 1.8 V 3 dbm Supply voltage V terminal 5. V Control voltage V CTL CTL1~3 terminals 5. V Power dissipation P D Four-layer FR4 PCB with through-hole (74.2mmx74.2mm), T j =15 C 13 mw Operating temp. T opr -4~+85 C Storage temp. T stg -55~+15 C ELECTRICAL CHARACTERISTICS (DC) (General conditions: =2.7 V, V CTL(L) = V, V =1.8 V, Z s =Z l =5 Ω, T a =+25 C, with application circuit) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Supply voltage V Operating current I f=2.ghz, P IN =23 dbm 45 1 µa Control voltage (LOW) Control voltage (HIGH) V CTL(L) -.4 V V V Control Current I CTL µa ELECTRICAL CHARACTERISTICS (RF) (General conditions: =2.7 V, V CTL(L) = V, V =1.8 V, Z s =Z l =5 Ω, T a =+25 C, with application circuit) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Insertion Loss1 LOSS1 f=1. GHz, P IN =23 dbm db Insertion Loss2 LOSS2 f=2. GHz, P IN =23 dbm db Insertion Loss3 LOSS3 f=2.5 GHz, P IN =23 dbm db Isolation1 ISL1 f=1. GHz, P IN =23 dbm db Isolation2 ISL2 f=2. GHz, P IN =23 dbm db Isolation3 ISL3 f=2.5 GHz, P IN =23 dbm db Input Power at.2db Compression Point P -.2dB f=2. GHz dbm VSWR VSWR f=2. GHz, ON state Switching Time T SW 5% CTL to 1%/9% RF 1 5 µs - 2 -
3 TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 GND Ground terminal. Connect to the PCB ground plane. 2 V 3 P5 Power supply input. This terminal should be connected to GND via a bypass capacitor. 4 GND Ground terminal. Connect to the PCB ground plane. 5 P4 6 P3 7 P2 8 GND Ground terminal. Connect to the PCB ground plane. 9 P1 1 PC Common RF input / output port. External capacitor is required to block the DC bias 11 GND Ground terminal. Connect to the PCB ground plane. 12 CTL3 Control port. High level is DC +1.3V~4.5V, Low level is DC ~+.4V. 13 CTL2 Control port. High level is DC +1.3V~4.5V, Low level is DC ~+.4V. 14 CTL1 Control port. High level is DC +1.3V~4.5V, Low level is DC ~+.4V
4 ELECTRICAL CHARACTERISTICS (With Application circuit, Loss of external circuit are excluded). Loss, ISL vs Frequency (PC-P1 ON,, V =1.8V, V CTL(L) =V). Loss, VSWR vs Frequency (, V =1.8V, V CTL(L) =V) PC-P2 PC-P1 ONISL PC-P3 ISL PC-P4 ISL PC-P5 ISL Isolation (db) PC-P1 ON PC-P2 PC-P1 ON ON PC-P3 PC-P2 ON PC-P3 ON PC-P4 ON PC-P5 ON VSWR:PC Port Output Power (dbm) Frequency (GHz) Output Power, I vs Input Power (f=2.ghz, PC-P1 ON) 1 V =2. 9 =2.5 8 =3.5 V =3.5 7 V = Input Power (dbm) Switching Time (, CTL2=V/1.8V, CTL1=V, CTL3=1.8V) Operation Current I (µa) Loss, ISL vs Input Power (f=2.ghz, PC-P1 ON) =2.V =2.V V =2.5V Frequency (GHz) Input Power (dbm) PC-P2 Isolation (db) CTL2 Voltage (arb. unit) P1 Port 1.µs.4µs Input...PC Port Time (1µs/div) - 4 -
5 ELECTRICAL CHARACTERISTICS (With Application circuit, Loss of external circuit are excluded) Operation Current vs Temperature Contorol Current vs Temperature Operation Current I (µa) (f=2.ghz, PC-P1 ON, P =23dBm) IN V =2.V V =2.5 V =2.7 V =3.5 V =4.5 Control Current I CTL (µa) (f=2.ghz, PC-P1 ON, P =23dBm) IN V =1.3V V =1.8V V V V LOSS, ISL vs Temperature VSWR vs Temperature. (f=2.ghz, PC-P1 ON, P IN =23dBm) 2. (f=2.ghz, PC-P1 ON) V =2. =2.V =2.5V =2.5V =2.7 V = PC-P2 Isolation (db) VSWR:PC Port V =2. V =2.5 V =2.7 V =3.5 V = P-.2dB vs Temperature (f=2.ghz, PC-P1 ON) Switching Time vs Temperature (CTL2=V/1.8V, CTL1=V, CTL3=1.8V, PC-P1 rise/fall time) 3. P -.2dB (dbm) Max Rating=3dBm V =2. V =2.5 V =2.7 V =3.5 V =4.5 Switching Time (µs) T rise V =2.V V =2.V V =2.5V V T fall
6 APPLICATION CIRCUIT (Top view) CTL1 CTL2 CTL DECODER V C7 1pF 2 1 C6 PC C5 3 9 C1 P P1 PARTS LIST C4 P4 P3 C3 C2 P2 Part ID Value Notes C1~C6 MURATA MFG C7 1pF (GRM15) TEST PCB LAYOUT P5 GND 1pin mark C5 (TOP VIEW) C4 CTL3 CTL2 CTL1 V C7 C3 GND C2 C6 C1 PC P1 PCB SIZE=39. x 2.mm PCB: FR-4, t=.2mm CAPACITOR: size 15 STRIP LINE WIDTH=.4mm Losses of PCB and Connectors Freq. Loss (db) (GHz) PC-P3 PC-P1 PC-P5 PC-P2 PC-P P4 P3 P PRECAUTIONS [1] The DC blocking capacitors should be placed at RF terminal of P1, P2, P3, P4, P5 and PC. Please choose appropriate capacitance values to the application frequency. [2] The bypass capacitor (C7) should be placed as close as possible to V terminal. [3] For good RF performance, all GND terminals are should be connected to PCB ground plane
7 PACKAGE OUTLINE (EQFN14-D7) Units : mm Board : Cu Terminal treat : SnBi Molding material : Epoxy resin Weight : 3.3mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages
DPDT SWITCH GaAs MMIC
DPDT SWITCH GaAs MMIC! GENERAL DESCRIPTION! PACKAGE OUTLINE The NJG1657MD7 is a GaAs DPDT switch featured low insertion loss, high isolation and small size package, and suited for mobile terminal applications.
More informationHigh Isolation SP4T SWITCH
High Isolation SP4T SWITCH NJG1699MD7 GENERAL DESCRIPTION The NJG1699MD7 is a GaAs high isolation SP4T switch MMIC. It features low insertion loss and very high isolation. It has integrated DC blocking
More information30dB P IN =25dBm. 0.50dB P IN =25dBm. 33dB P IN =25dBm. 21dB
NJG1HA8 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1HA8 is a GaAs SPDT switch IC suited for antenna switch of WiMAX application and other wireless handsets. The NJG1HA8 features high power handling,
More informationHIGH POWER SPDT SWITCH GaAs MMIC
HIGH POWER SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1681MD7 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1681MD7 features very low insertion loss, high isolation
More informationSPDT SWITCH GaAs MMIC
SPDT SWITCH GaAs MMIC! GENERAL DESCRIPTION! PACKAGE OUTLINE The NJG1608KB2 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. The NJG1608KB2 is suitable for switching
More informationHigh Isolation SPDT SWITCH
High Isolation SPDT SWITCH GENERAL DESCRIPTION The NJG1697EM1 is a 1bit control GaAs high isolation SPDT switch MMIC. The NJG1697EM1 features very high isolation and low control voltage. It has integrated
More informationSP3T SWITCH GaAs MMIC
SP3T SWITCH GaAs MMIC NJG188K94 GENERAL DESCRIPTION PACKAGE OUTLINE The NJG188K94 is a low power SP3T switch controlled by two bits signals. The low loss performance and high Isolation makes the switch
More informationHIGH POWER SP3T SWITCH GaAs MMIC
HIGH POWER SP3T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1682MD7 is a GaAs SP3T switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1682MD7 features very low insertion loss, high isolation
More informationHIGH POWER SP4T SWITCH GaAs MMIC
NJG189ME7 HIGH POWER SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG189ME7 is a high power SP4T switch MMIC suitable for LTE-U / LAA, WLAN, and LTE applications. This switch features very low insertion
More informationDPDT SWITCH GaAs MMIC
DPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1648HB6 is a GaAs DPDT switch IC that features low loss, low current consumption and low control voltage. This IC includes logic decoder, and can be operated
More informationSP4T SWITCH GaAs MMIC
SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1519KC1 is a GaAs high power SP4T switch MMIC for antenna switch of dual mode cellular phone application such as GSM/DCS18. This switch is designed for an antenna
More informationSP10T ANTENNA SWITCH GaAs MMIC
SP10T ANTENNA SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1686MHH is a GaAs SP10T antenna switch MMIC suitable for LTE/3G/GSM multimode applications. This switch includes on-chip decoder circuits and low pass
More informationSPDT SWITCH GaAs MMIC
NJG115K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG115K75 is a 1bit control SPDT switch. The switch is used for WLAN system. The switch features low insertion loss, high isolation for high frequency
More informationSPDT SWITCH GaAs MMIC
NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion
More informationSPDT SWITCH GaAs MMIC
NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion
More informationSP3T SWITCH GaAs MMIC
NJG184K64 SP3T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG184K64 is a GaAs SP3T switch MMIC which is suitable for WLAN(82.11a/b/g/n/ac) and Bluetooth applications. This MMIC switches between a common
More informationDPDT SWITCH GaAs MMIC
DPDT SWITCH GaAs MMIC NJG1528KC1 Revised Feb./16/01 Ver.2 GENERAL DESCRIPTION NJG1528KC1 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as
More informationDPDT SWITCH GaAs MMIC
DPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1528HD3 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as CDMA, AMPS and PCS. This switch features
More informationDPDT SWITCH GaAs MMIC
DPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG162HE3 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as CDMA, GPS and PCS. This switch features
More informationSPDT SWITCH GaAs MMIC
SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1516R is a GaAs SPDT switch IC suited for antenna switch of cellular phone handset. This switch features low loss, high isolation at high power, and exhibits
More informationWIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
NJG114UA2 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJG114UA2 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial and satellite applications. To achieve wide
More informationLOW NOISE AMPLIFIER GaAs MMIC. -4.0dBm
LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG7HB6 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP operated by single low positive
More informationUHF BAND LOW NOISE AMPLIFIER GaAs MMIC
NJGHA UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJGHA is a low noise amplifier GaAs MMIC designed for mobile digital TV application (~ MHz). This IC features good gain flatness, and low
More informationWIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJGKA is a wide band low noise amplifier GaAs MMIC designed for mobile TV application. And this amplifier can be tuned to wide frequency
More informationUHF BAND LOW NOISE AMPLIFIER GaAs MMIC
NJG9UA UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJG9UA is a low noise amplifier GaAs MMIC designed for mobile digital TV application (7~77 MHz). This IC has a LNA pass-through function
More informationWide Band Low Noise Amplifier GaAs MMIC
NJG12KA1 Wide Band Low Noise Amplifier GaAs MMIC GENERAL DESCRIPTION The NJG12KA1 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial application. To achieve wide dynamic range,
More informationGNSS LOW NOISE AMPLIFIER GaAs MMIC
NJGUA GNSS LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJGUA is a low noise amplifier GaAs MMIC designed for GNSS (Global navigation Satellite Systems). The NJGUA is featured very small size,
More informationGNSS LOW NOISE AMPLIFIER
GNSS LOW NOISE AMPLIFIER NJG8HA8 GENERAL DESCRIPTION The NJG8HA8 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). This amplifier provides low noise figure, high
More informationGPS LOW NOISE AMPLIFIER GaAs MMIC. -2.0dBm GND RFOUT
GPS LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION This IC is a Low noise amplifier GaAs MMIC designed for GPS. This amplifier provides low noise figure, high gain and high IP operated by single low
More informationPDC Dual Band LNA GaAs MMIC
PDC Dual Band LNA GaAs MMIC GENERAL DESCRIPTION The is a dual band low noise amplifier for 8MHz and MHz band. The band switching between 8MHz CD, A Band and MHz is made by bit control signal by using inverter
More informationGNSS LOW NOISE AMPLIFIER GaAs MMIC
GNSS LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG1130KA1 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). The LNA offers excellent low noise figure,
More informationWIDE BAND AGC AMPLIFIER GaAs MMIC
NJGF WIDE BAND AGC AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJGF is a GaAs MMIC designed mainly for wireless phone handsets at frequency range of 8MHz from.ghz. NJGF is a variable gain amplifier with db
More informationLow Noise Amplifier with Bypass for LTE
NJG117UX2 Low Noise Amplifier with Bypass for LTE GENERAL DESCRIPTION NJG117UX2 is low noise amplifier with bypass switch for LTE which covers frequency from 185 to 22MHz and from 23 to 269MHz. The NJG117UX2
More informationGNSS LOW NOISE AMPLIFIER
GNSS LOW NOISE AMPLIFIER GENERAL DESCRIPTION The NJG11KA1 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). This amplifier achieves high gain and a good balance
More information800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC
NJG14KB 8MHz BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE NJG14KB is a variable gain low noise amplifier (LNA). At 8MHz band, noise figure is 1.dB, variable gain re is 1dB and
More information2GHz BAND LOW NOISE AMPLIFIER
GHz BAND LOW NOISE AMPLIFIER GENERAL DESCRIPTION is a low noise amplifier GaAs MMIC designed for GHz band application, and.ghz to.ghz operation with modified schematic. This IC has the function which bypasses
More informationMEDIUM POWER AMPLIFIER GaAs MMIC
MEDIUM POWER AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG132V is a GaAs MMIC designed mainly for the final stage power amplifier of Japanese PHS handset, but suitable digital wireless phone and wireless
More information2-way Active Splitter GaAs MMIC
NJG111MD7 -way Active Splitter GaAs MMIC GENERAL DESCRIPTION The NJG111MD7 is -way active splitter with normally loop through switch GaAs MMIC for terrestrial applications, and this IC can be tuned to
More information800MHz BAND FRONT-END GaAs MMIC
MHz BAND FRONT-END GaAs MMIC GENERAL DESCRIPTION NJG7KC is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for MHz band cellular phone handsets. The ultra small &
More informationGPS Front-End Module
NJGPCD GPS Front-End Module GENERAL DESCRIPTION The NJGPCD is a front-end module (FEM) designed for GPS applications. Its ultra-low current consumption is particularly suitable for wearable devices. This
More informationGPS Front-End Module
GPS Front-End Module GENERAL DESCRIPTION The NJG11PCD is a front-end module (FEM) designed for GPS applications. The NJG11PCD offers high gain, low noise figure, high linearity and very high out-band rejection
More informationNJG1175KG1. 5 GHz Low Noise Amplifier with Bypass function. H =V CTL(H), L =V CTL(L)
5 GHz Low Noise Amplifier with Bypass function FEATURES Operating frequency Operating voltage [LNA active mode] High gain Low noise figure High IIP3 Small package size f = 4900 to 5925 MHz 2.5 to 5.5 V
More informationGPS and GLONASS Front-End Module
GPS and GLONASS Front-End Module GENERAL DESCRIPTION The NJG117PCD is a front-end module (FEM) designed for GPS and GLONASS applications. The NJG117PCD offers high gain, low noise figure, high linearity
More informationWIDE BAND AGC AMPLIFIER GaAs MMIC
NJGF WDE BAND AGC AMPLFER GaAs MMC GENERAL DESCRPTON NJGF is a GaAs MMC designed mainly for wireless phone handsets at frequency range of 8MHz from.ghz. NJGF is a variable gain amplifier with db dynamic
More informationDISCONTINUED PG2413T6Z. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth TM and b/g DESCRIPTION FEATURES APPLICATIONS
GaAs Integrated Circuit SP3T Switch for Bluetooth TM and 802.11b/g DESCRIPTION Data Sheet The PG2413T6Z is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate
More informationDISCONTINUED. Preliminary. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth and a/b/g DESCRIPTION FEATURES APPLICATIONS
μpg243tz GaAs Integrated Circuit SP3T Switch for Bluetooth and 82.a/b/g DESCRIPTION Preliminary Data Sheet The μpg243tz is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This
More informationNJU1206MER. SP6T Switch MMIC with MIPI RFFE. FEATURES MIPI RFFE Serial control interface
SP6T Switch MMIC with MIPI RFFE FEATURES MIPI RFFE Serial control interface Low insertion loss High isolation External MIPI select pin.3 db typ. @ f =.9 GHz.4 db typ. @ f = 1.9 GHz.5 db typ. @ f = 2.7
More informationProduct Specifications Approval Sheet
TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com
More information50Ω TERMINATION TYPE HIGH POWER SPDT SWITCH. Part Number Order Number Package Marking Description
RF SWITCH CG2176X3 50Ω TERMINATION TYPE HIGH POWER SPDT SWITCH DESCRIPTION The CG2176X3 is a phemt GaAs MMIC 50Ω termination type high power SPDT (Single Pole Double Throw) switch which was developed for
More informationDual-Band Wireless DPDT RF Switch
Dual-Band Wireless DPDT RF Switch RF SWITCH CG2164X3 DESCRIPTION The CG2164X3 is a GaAs MMIC DPDT (Double Pole Double Throw) switch for 2.5 GHz and 6 GHz dual-band wireless LAN applications PACKAGE 6-pin
More informationHigh Power SPDT RF Switch
High Power SPDT RF Switch RF SWITCH CG2409M2 DESCRIPTION The CG2409M2 is a GaAs MMIC high power SPDT (Single Pole Double Throw) switch which was designed for WiMAX and Wireless LAN applications FEATURES
More informationFeatures. Parameter Frequency Min. Typ. Max. Units. Return Loss Off State DC - 20 GHz 19 db
Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Hybrids Test Instrumentation SATCOM & Sensors Functional Diagram Features Broadband Performance: DC
More informationFeatures. Parameter Frequency Min. Typ. Max. Units. Return Loss Off State DC - 20 GHz 13 db
Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Hybrids Test Instrumentation SATCOM & Sensors Functional Diagram Features Broadband Performance: DC
More informationParameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Low loss broadband performance High isolation Non-reflective design Integrated 3:8 TTL decoder Pb-free RoHs compliant 4x4 SMT package Description The CMD236C4 is a broadband
More informationFeatures. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications This switch is suitable for usage in 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Functional Diagram Features Broadband Performance:
More informationFeatures. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units DC GHz
Typical Applications This switch is suitable for usage in 50- Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Functional Diagram Features Broadband Performance:
More informationDC-20 GHz SP4T Non-reflective Switch
Features Functional Block Diagram Low loss broadband performance High isolation Non-reflective design Integrated 2:4 TTL decoder Small die size 2 3 RF1 RF2 A 4 Description The CMD23 is a broadband MMIC
More informationHMC241AQS16 / 241AQS16E
v00.1213 Typical Applications Features The HMC241AQS16 & HMC241AQS16E are ideal for: Base Stations & Portable Wireless CATV / DBS Wireless Local Loop Test Equipment Functional Diagram RoHS Compliant Product
More informationFeatures +3V +5V GHz
Typical Applications The is ideal for: Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment Functional Diagram Features High Isolation: up to Single
More informationAWS5504 GaAs IC Negative Control SPDT Reflective Switch DC-2.0 GHz Data Sheet - Rev 2.1
GaAs IC Negative Control SPDT Reflective Switch DC2.0 GHz FEATURES High Linearity (IP3 48 dbm @ 0.9 GHz) Low Insertion Loss (0.4 db @ 0.9 GHz) 2.75 V to 3.5 to +2.75 operation Low DC Power Consumption
More informationDISCONTINUED PG2012TK. GaAs INTEGRATED CIRCUIT L-BAND SPDT SWITCH DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION
DESCRIPTION L-BAND SPDT SWITCH GaAs INTEGRATED CIRCUIT PG2012TK The PG2012TK is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application.
More informationRoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
More information700MHz Band Application
7MHz Band Application SUMMARY The characteristics of 7MHz band have evaluated as follows. The evaluation circuit structure and measured data are reviewed. MEASURED DATA DC Characteristics General Condition:
More informationNJM2722. Single Ultra-High speed and Wide Band Operational Amplifier
Single Ultra-High speed and Wide Band Operational Amplifier GENERAL DESCRIPTION The NJM2722 is a single, ultra-high speed and wide band operational amplifier that features 1V/μs slew rate and 1ohm load
More informationParameter Min Typ Max Units Frequency Range
Features Low loss broadband performance High isolation Fast switching speed Non-reflective design - RF1 and RF2 Small die size Description Functional Block Diagram RF1 RF2 1 2 The CMD204 die is a general
More informationFeatures. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications This switch is suitable for usage in 50- Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Features Broadband Performance: DC - 8 GHz High Isolation:
More informationNJM2344. PWM DC/DC Converter IC with Standby Function FEATURES
PWM DC/DC Converter IC with Standby Function GENERAL DESCRIPTION The NJM344 is a general purpose PWM DC/DC converter IC configurable for step-up, step-down and inverting applications. An internal.a power
More informationParameter Min Typ Max Units Frequency Range
Features Low loss broadband performance High isolation Fast switching speed Non-reflective design Small die size Functional Block Diagram B A 3 4 5 2 RFC A B 6 Description The CMD196 is a general purpose
More informationHMC849ALP4CE SWITCHES - SPDT - SMT. HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz. Typical Applications. Features. Functional Diagram
Typical Applications The is ideal for: Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment Functional Diagram Features High Isolation: up to Single
More informationRF1 RF2 RF3 RF4. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS
BROADBAND HIGH POWER SP4T SWITCH Package Style: QFN, 12-pin, 2.5mmx2.5mm Features 2kV HBM ESD Protection on All Ports Low Frequency to >2.7GHz Operation Low Insertion Loss: 0.4dB at 1GHz Very High Isolation:
More informationRF8889A SP10T ANTENNA SWITCH MODULE
SP10T ANTENNA SWITCH MOD- ULE RF8889A SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm GSM Rx1 RF8889A GSM Rx2 Features Broadband Performance Suitable for all Cellular Modulation Schemes up
More informationRF5187. RoHS Compliant & Pb-Free Product Typical Applications. 2.14GHz UMTS Systems. PCS Communication Systems Digital Communication Systems
0 RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications 2.14GHz UMTS Systems PCS Communication Systems Digital Communication Systems Commercial and Consumer Systems Product
More informationRF2420. Typical Applications Power Control in Communication Systems CMOS Compatible Programmable Attenuators
RF2420 PROGRAMMABLE ATTENUATOR Typical Applications Power Control in Communication Systems CMOS Compatible Programmable Attenuators Commercial and Consumer Systems Portable Battery-Powered Equipment Product
More informationFeatures OBSOLETE. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications This switch is suitable for usage in 50- Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Functional Diagram Features Broadband Performance:
More informationSBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block
Product Description Sirenza Microdevices SBB-389Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
More informationGHz RF Front-End Module. o C
Functional Block Diagram Features 4 High Efficient Power Amplifier: 41% at Pout= 23dBm -PA P-1dB: +21dBM Typical @ +3.3V-PA Low Noise Amplifier (NF typical 1.8dB)-LNA Low Insertion Loss:0.4dB@ 2.45GHz-Switch
More informationFeatures OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
More informationCMD119P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.6 V, T A = 25 o C, F=8GHz
Features Functional Block Diagram Ultra low noise figure Low current consumption High gain broadband performance Single supply voltage: +3.6 V @ 3 ma Pb-free RoHs compliant 3x3 QFN package Description
More informationSINGLE-SUPPLY DUAL COMPARATOR. * NJM2903CMD7 don t have a A version. (Top View)
NJM9C / NJM9CA SINGLE-SUPPLY DUAL COMPARATOR GENERAL DESCRIPTION The NJM9C / NJM9CA consist of two independent voltage comparators that are designed specifically to operate from a single power supply over
More information1-24 GHz Distributed Driver Amplifier
Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Description The CMD197C4 is a wideband GaAs MMIC driver amplifier housed in a leadless
More informationOBSOLETE. = +25 C, With Vdd = +5V & Vctl = 0/+5V. Parameter Frequency Min. Typ. Max. Units DC - 4 GHz GHz Attenuation Range DC - 10 GHz 10 db
Typical Applications The HMC8LP3E is ideal for: Test Equipment and Sensors ISM, MMDS, WLAN, WiMAX, WiBro Microwave Radio & VSAT Cellular Infrastructure Functional Diagram HMC8LP3E v.11 1 GaAs MMIC 1-BIT
More informationMACP Temperature Compensated Directional RMS Power Detector GHz Rev. V1 Features Functional Schematic Description Pin Configuration 3
Features Integrated Directional Coupler Low Insertion Loss:.5 db @ Min. detectable power: -15 dbm @ Dynamic range: 45 db @ Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm 6-Lead TDFN Halogen-Free
More informationAnalog Devices Welcomes Hittite Microwave Corporation
Analog Devices Welcomes Hittite Microwave Corporation www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.915 GaAs MMIC 6-BIT DIGITAL Typical Applications The HMC648ALP6E is ideal for:
More informationNJM2720. Single Ultra-High speed and Wide Band Operational Amplifier
NJM272 Single Ultra-High speed and Wide Band Operational Amplifier GENERAL DESCRIPTION The NJM272 is a single, ultra-high speed and wide band operational amplifier that features 2V/μs slew rate and 1ohm
More informationRF1. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Low loss broadband performance High isolation Fast switching speed Reflective design Small die size Description RFC 1 The CMD230 is a general purpose broadband high isolation
More informationFeatures. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications The HMC244AG16 is ideal for: Telecom Infrastructure Military Radios, Radar & ECM Space Applications Test Instrumentation Functional Diagram Features Low Insertion Loss:.9 Non-Reflective
More informationNJW channel High Side Switch GENERAL DESCRIPTION PACKAGE OUTLINE
-channel High Side Switch GENERAL DESCRIPTION The NJW483 is the single high-side switch that can supply.a. The active clamp circuit, overcurrent and thermal shutdown are built-in to Pch MOS FET. A logic
More informationFeatures OBSOLETE. = +5V in a 50 Ohm System. Parameter Frequency Min. Typ. Max. Units DC GHz DC GHz
Typical Applications The HMC252QS24 / HMC252QS24E is ideal for: Base Station CATV / DBS MMDS & WirelessLAN Test Equipment Functional Diagram Features Low Insertion Loss (2 GHz):.9 Single Positive Supply:
More informationFeatures. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.
v.91.5 db LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,.1-33 GHz Typical Applications The HMC941LP4 / HMC941LP4E is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar &
More informationSGA-6489 SGA-6489Z Pb
Product Description The SGA-689 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring micron emitters provides high F T and excellent thermal perfomance. The heterojunction
More information= +25 C, With Vee = -5V & Vctl = 0/-5V
v.46.5db LSB GaAs MMIC 6-BIT DIGITAL Typical Applications Features The HMC44AG6 is ideal for: Telecom Infrastructure Military Radios, Radar & ECM Space Applications Test Instrumentation Functional Diagram.5
More informationHMC349LP4C / 349LP4CE
Typical Applications The HMC349LP4C / HMC349LP4CE is ideal for: Basestation Infrastructure MMDS & 3.5 GHz WLL CATV/CMTS Test Instrumentation Functional Diagram Features High Isolation: 67 @ 1 GHz 62 @
More informationFeatures. Return Loss (RF1, RF2) Off State GHz db. Input Power for 1 db Compression GHz dbm
POSITIVE CONTROL SWITCH, DC* - 6.0 GHz Typical Applications This switch is suitable for usage in 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 6.0 GHz Functional
More informationSBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier
Product Description Sirenza Microdevices SBB-89Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
More informationCMD157P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.
Features Functional Block Diagram Ultra low noise figure High gain broadband performance Single supply voltage: +3. V @ 52 ma Pb-free RoHs compliant 3x3 QFN package Description The CMD7P3 is a broadband
More informationSKY LF: 0.02 to 4.0 GHz High Isolation SP4T Absorptive Switch with Decoder
DATA SHEET SKY13392-359LF:.2 to 4. GHz High Isolation SP4T Absorptive Switch with Decoder Applications GSM/CDMA/WCDMA/LTE cellular infrastructure Test and measurement systems Military communications Features
More informationHMC245QS16 / 245QS16E. Features OBSOLETE. Parameter Frequency Min. Typ. Max. Units. DC GHz DC GHz DC GHz
Typical Applications The HMC245QS16 / HMC245QS16E is ideal for: Basestation Infrastructure CATV / DBS Wireless Local Loop Test Equipment Functional Diagram Features Low Insertion Loss:.5 @ 2. GHz Non-Refl
More information0.1 GHz to 18 GHz, GaAs SP4T Switch HMC641A
Data Sheet 0. GHz to 8 GHz, GaAs SP4T Switch FEATURES Broadband frequency range: 0. GHz to 8 GHz Nonreflective 50 Ω design Low insertion loss: 2. db to 2 GHz High isolation: 42 db to 2 GHz High input linearity
More informationFeatures. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.
v.6.5 LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,. - 33 GHz Typical Applications Features The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications
More informationNJU7670V VOLTAGE TRIPLER PRELIMINARY
VOLTAGE TRIPLER GENERAL DESCRIPTION The NJU7670 is a voltage tripler incorporated CR oscillator, voltage converter, reference voltage circuit and voltage regulator. It can generates triple or double negative
More information