GNSS LOW NOISE AMPLIFIER GaAs MMIC

Size: px
Start display at page:

Download "GNSS LOW NOISE AMPLIFIER GaAs MMIC"

Transcription

1 NJGUA GNSS LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJGUA is a low noise amplifier GaAs MMIC designed for GNSS (Global navigation Satellite Systems). The NJGUA is featured very small size, low noise figure, high gain and low current consumption. The NJGUA operates from.v to.v single voltage between - and C, has stand-by mode to save the supply current, and requires only three external components. The NJGUA has an on-chip ESD protection. The NJGUA is available in a very small, lead-free, halogen-free,.mm x.mm x.7 mm, -pin EPFFP-A package. PACKAGE OUTLINE NJGUA APPLICATION GNSS applications like GPS, Galileo, GLONASS and COMPASS FEATURES Low supply voltage +.V typ. (+.V to +.V) Low control voltage +.V typ. (+.V to +.V) Low current consumption.ma DD =.V, V CTL =.V 7μA DD =.V, V CTL =V, Stand-by mode High gain.db DD =.V, V CTL =.V, f=7mhz Low noise figure.7db DD =.V, V CTL =.V, f=7mhz Input power at db gain compression point -.dbm DD =.V, V CTL =.V, f=7mhz High input IP -.dbm DD =.V, V CTL =.V, f=7+7.mhz Stand-by function Small package size EPFFP-A (Package size:.mmx.mmx.7mm typ.) Integrated ESD protection circuit Lead-free and halogen-free, MSL PIN CONFIGURATION (Top View) RFIN GND Bias Circuit VDD Pin Connection. GND. VCTL. RFOUT. VDD. GND. RFIN GND Logic Circuit RFOUT VCTL TRUTH TABLE H =V CTL (H), L =V CTL (L) VCTL LNA Mode H Active mode L Stand-by mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver

2 NJGUA ABSOLUTE MAXIMUM RATINGS T a =+ C, Z s =Z l = PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Supply voltage V DD. V Control voltage V CTL. V Input power P IN V DD =.V + dbm Power dissipation P D -layer FR PCB with through-hole (.mmx.mm), T j = C 9 mw Operating temperature T opr - to + C Storage temperature T stg - to + C ELECTRICAL CHARACTERISTICS (DC) (General conditions: T a =+ C, Z s =Z l = ) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Supply Voltage V DD VDD Terminal. -. V Control Voltage (High) V CTL(H) VCTL Terminal... V Control Voltage (Low) V CTL(L) VCTL Terminal. V Supply Current Supply Current Supply Current Supply Current I DD I DD I DD I DD Active mode VDD Terminal V DD =.V, V CTL =.V Active mode VDD Terminal V DD =.V, V CTL =.V Stand-by mode VDD Terminal V DD =.V, V CTL =V Stand-by mode VDD Terminal V DD =.V, V CTL =V -.. ma -..7 ma μa -.. μa Control Current I CTL V CTL=.V, VCTL Terminal -.. μa - -

3 NJGUA ELECTRICAL CHARACTERISTICS (RF, V DD =.V) (General conditions: V DD =.V, V CTL=.V, Freq=.7GHz,T a =+ C, Z s =Z l =, with application circuit) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Small Signal Gain Gain 7... db Noise Figure NF Exclude PCB and connector Losses (.db) db Input Power at db Gain Compression Point P-dB(IN)_ dbm Input rd Order Intercept Point IIP_ tone, k spacing Pin=-dBm dbm RF Input Port VSWR VSWR i -.. RF Output Port VSWR VSWR o.. ELECTRICAL CHARACTERISTICS (RF, V DD =.V) (General conditions: V DD =.V, V CTL=.V, Freq=.7GHz,T a =+ C, Z s =Z l =, with application circuit) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Small Signal Gain Gain. 9.. db Noise Figure NF Exclude PCB and connector Losses (.db) -.7. db Input Power at db Gain Compression Point P-dB(IN) _ dbm Input rd Order Intercept Point IIP_ tone, k spacing Pin=-dBm dbm RF Input Port VSWR VSWR i -.. RF Output Port VSWR VSWR o

4 NJGUA TERMINAL INFORMATION No. SYMBOL DESCRIPTION GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. VCTL RFOUT Control voltage terminal. Inputting a logic-high, the LNA turn at LNA active mode. Inputting a logic-low, the LNA turn at stand-by mode. RF output terminal. Requires an external capacitor C. The capacitor C is not only a matching component, but also a DC blocking capacitor. VDD Supply voltage terminal. Bypass to ground with capacitor C as close as possible to the IC. GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. RFIN RF input terminal. Requires a matching inductor L. Integrated a DC blocking capacitor. - -

5 ELECTRICAL CHARACTERRISTICS Conditions: V DD =.V, V CTL =.V, Ta=+ o C, Zs=Zl=, with application circuit NJGUA S, S S, S VSWR Zin, Zout S, S (f=mhz~ghz) S, S (f=mhz~ghz) - -

6 NJGUA ELECTRICAL CHARACTERRISTICS Conditions: V DD =.V, V CTL =.V, Ta=+ o C, Zs=Zl=, with application circuit NF, Gain vs. frequency (VDD=.V, VCTL=.V), ICTL vs. VCTL (VDD=.V, RF OFF) Noise Figure (db).. NF Gain 9 7 Gain (db) (ma) ICTL ICTL (ua). (NF: Exclude PCB, Connector Losses) frequency (GHz) Pout vs. Pin (VDD=.V, VCTL=.V, frf=7mhz)... VCTL (V) Gain, vs. Pin (VDD=.V, VCTL=.V, frf=7mhz) Gain 9 Pout (dbm) - - Pout Gain (db) 7 (ma) - - P-dB(IN)=-.dBm P-dB(IN)=-.dBm Pin (dbm) Pin (dbm) Pout, IM vs. Pin (VDD=.V, VCTL=.V, frf=7+7.mhz) OIP, IIP vs. frequency (VDD=.V, VCTL=.V, df=khz, Pin=-dBm) Pout, IM (dbm) Pout IM IIP=-.dBm OIP (dbm) OIP IIP - - IIP (dbm) Pin (dbm) frequency (GHz) - -

7 ELECTRICAL CHARACTERRISTICS Conditions: V DD =.V, V CTL =.V, Ta=+ o C, Zs=Zl=, with application circuit NJGUA Gain, NF vs. Temperature (VDD=.V, VCTL=.V, frf=7mhz). vs. Temperature (VDD=.V, VCTL=.V/V, RF OFF) Gain (db) Gain.. NF. (NF: Exclude PCB, Connector Losses) - - Noise Figure (db) mode (Active mode) - - (Standby mode) mode - P-dB(IN) vs. Temperature (VDD=.V, VCTL=.V, frf=7mhz) OIP, IIP vs. Temperature (VDD=.V, VCTL=.V, frf=7+7.mhz, Pin=-dBm) - P-dB(IN) (dbm) P-dB(IN) OIP (dbm) OIP IIP - IIP (dbm) VSWR vs. Temperature (VDD=.V, VCTL=.V, frf=7mhz) k factor vs. frequency (VDD=.V, VCTL=.V) VSWRi, VSWRo... VSWRi VSWRo k factor + o C + o C - o C - - frequency (GHz) - 7 -

8 NJGUA ELECTRICAL CHARACTERRISTICS Conditions: V DD =.V, V CTL =.V, Ta=+ o C, Zs=Zl=, with application circuit S, S S, S VSWR Zin, Zout S, S (f=mhz~ghz) S, S (f=mhz~ghz) - -

9 NJGUA ELECTRICAL CHARACTERRISTICS Conditions: V DD =.V, V CTL =.V, Ta=+ o C, Zs=Zl=, with application circuit NF, Gain vs. frequency (VDD=.V, VCTL=.V), ICTL vs. VCTL (VDD=.V, RF OFF). Gain Noise Figure (db). NF 9 7 Gain (db) (ma) ICTL ICTL (ua). (NF: Exclude PCB, Connector Losses) frequency (GHz) Pout vs. Pin (VDD=.V, VCTL=.V, frf=7mhz)... VCTL (V) Gain, vs. Pin (VDD=.V, VCTL=.V, frf=7mhz) 9 Pout (dbm) Pout Gain (db) Gain 7 (ma) - P-dB(IN)=-.dBm P-dB(IN)=-.dBm Pin (dbm) Pout, IM vs. Pin (VDD=.V, VCTL=.V, frf=7+7.mhz) Pin (dbm) OIP, IIP vs. frequency (VDD=.V, VCTL=.V, df=khz, Pin=-dBm) Pout, IM (dbm) Pout IM IIP=-.dBm OIP (dbm) OIP IIP IIP (dbm) Pin (dbm) frequency (GHz) - 9 -

10 NJGUA ELECTRICAL CHARACTERRISTICS Conditions: V DD =.V, V CTL =.V, Zs=Zl=, with application circuit Gain, NF vs. Temperature (VDD=.V, VCTL=.V, frf=7mhz). vs. Temperature (VDD=.V, VCTL=.V/V, RF OFF) Gain (db) Gain.. NF. (NF: Exclude PCB, Connector Losses) - - Noise Figure (db) mode (Active mode) - - (Standby mode) mode - P-dB(IN) vs. Temperature (VDD=.V, VCTL=.V, frf=7mhz) OIP, IIP vs. Temperature (VDD=.V, VCTL=.V, frf=7+7.mhz, Pin=-dBm) P-dB(IN) (dbm) P-dB(IN) OIP (dbm) OIP IIP IIP (dbm) VSWR vs. Temperature (VDD=.V, VCTL=.V, frf=7mhz) k factor vs. frequency (VDD=.V, VCTL=.V) VSWRi, VSWRo... VSWRi VSWRo k factor + o C + o C - o C - - frequency (GHz) - -

11 NJGUA ELECTRICAL CHARACTERRISTICS Conditions: RF OFF, Zs=Zl=, with application circuit vs. VCTL (VDD=.V, RF OFF) vs. VDD (VCTL=.V, RF OFF) (ma) + o C + o C (ma) + o C + o C - o C - o C... VCTL (V).... VDD (V) vs. VDD (VCTL=V, RF OFF) ICTL vs. Temperature (VDD=.V or.v, VCTL=.V, RF OFF) + o C (ua) ICTL (ua) ICTL + o C - o C.... VDD (V)

12 NJGUA ELECTRICAL CHARACTERRISTICS Condition: V CTL =.V, Ta=+ o C, Zs=Zl=, with application circuit Gain, NF vs. VDD (VCTL=.V, frf=7mhz) vs. VDD (VCTL=.V/V, RF OFF) Gain (db) 9 7 Gain NF (NF: Exclude PCB, Connector Losses)... Noise Figure (db) mode (Active mode) (Standby mode) mode.... VDD (V).... VDD (V) - P-dB(IN) vs. VDD (VCTL=.V, frf=7mhz) OIP, IIP vs. VDD (VCTL=.V, frf=7+7.mhz, Pin=-dBm) P-dB(IN) (dbm) P-dB(IN) OIP (dbm) OIP IIP IIP (dbm) VDD (V) VSWR vs. VDD (VCTL=.V, frf=7mhz) VDD (V) k factor vs. frequency (VCTL=.V) VSWRi, VSWRo.. VSWRi VSWRo k factor VDD=.V VDD=.V, V..... VDD (V) frequency (GHz) - -

13 NJGUA APPLICATION CIRCUIT (Top View) RF IN L 9.nH GND V DD RFIN VDD C pf Bias Circuit GND Logic Circuit VCTL RFOUT C pf RF OUT V CTL TEST PCB LAYOUT (Top View) Parts list Parts ID Manufacture V DD L C, C LQPT_ Series (MURATA) GRM Series (MURATA) RF IN L C RF OUT C V CTL PCB Substrate: FR- Thickness:.mm Microstrip line width:.mm (Z = ) Size:.mm x.mm - -

14 NJGUA NOISE FIGURE MEASUREMENT CONDITONS Measuring instruments NF Analyzer : Agilent 97A, 97A Noise Source : Agilent A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : Average mode : Point Bandwidth : MHz Loss comp : off Tcold : setting the temperature of noise source (.K) NF Analyzer (Agilent 97A, 97A) Noise Source (Agilent A) * Noise source and NF analyzer Input ( ) Noise Source Drive Output are connected directly. Calibration Setup NF Analyzer (Agilent 97A, 97A) Noise Source (Agilent A) * Noise source and DUT, IN DUT OUT Input ( ) Noise Source Drive Output DUT and NF analyzer are connected directly. Measurement Setup - -

15 NJGUA PACKAGE OUTLINE (EPFFP-A) Unit Substrate Terminal treat Molding material Weight (typ.) : mm : FR : Au : Epoxy resin :.mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - -

GNSS LOW NOISE AMPLIFIER

GNSS LOW NOISE AMPLIFIER GNSS LOW NOISE AMPLIFIER GENERAL DESCRIPTION The NJG11KA1 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). This amplifier achieves high gain and a good balance

More information

UHF BAND LOW NOISE AMPLIFIER GaAs MMIC

UHF BAND LOW NOISE AMPLIFIER GaAs MMIC NJG9UA UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJG9UA is a low noise amplifier GaAs MMIC designed for mobile digital TV application (7~77 MHz). This IC has a LNA pass-through function

More information

WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC

WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC NJG114UA2 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJG114UA2 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial and satellite applications. To achieve wide

More information

GNSS LOW NOISE AMPLIFIER

GNSS LOW NOISE AMPLIFIER GNSS LOW NOISE AMPLIFIER NJG8HA8 GENERAL DESCRIPTION The NJG8HA8 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). This amplifier provides low noise figure, high

More information

WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC

WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJGKA is a wide band low noise amplifier GaAs MMIC designed for mobile TV application. And this amplifier can be tuned to wide frequency

More information

Low Noise Amplifier with Bypass for LTE

Low Noise Amplifier with Bypass for LTE NJG117UX2 Low Noise Amplifier with Bypass for LTE GENERAL DESCRIPTION NJG117UX2 is low noise amplifier with bypass switch for LTE which covers frequency from 185 to 22MHz and from 23 to 269MHz. The NJG117UX2

More information

GNSS LOW NOISE AMPLIFIER GaAs MMIC

GNSS LOW NOISE AMPLIFIER GaAs MMIC GNSS LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG1130KA1 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). The LNA offers excellent low noise figure,

More information

UHF BAND LOW NOISE AMPLIFIER GaAs MMIC

UHF BAND LOW NOISE AMPLIFIER GaAs MMIC NJGHA UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJGHA is a low noise amplifier GaAs MMIC designed for mobile digital TV application (~ MHz). This IC features good gain flatness, and low

More information

Wide Band Low Noise Amplifier GaAs MMIC

Wide Band Low Noise Amplifier GaAs MMIC NJG12KA1 Wide Band Low Noise Amplifier GaAs MMIC GENERAL DESCRIPTION The NJG12KA1 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial application. To achieve wide dynamic range,

More information

GPS LOW NOISE AMPLIFIER GaAs MMIC. -2.0dBm GND RFOUT

GPS LOW NOISE AMPLIFIER GaAs MMIC. -2.0dBm GND RFOUT GPS LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION This IC is a Low noise amplifier GaAs MMIC designed for GPS. This amplifier provides low noise figure, high gain and high IP operated by single low

More information

GPS Front-End Module

GPS Front-End Module NJGPCD GPS Front-End Module GENERAL DESCRIPTION The NJGPCD is a front-end module (FEM) designed for GPS applications. Its ultra-low current consumption is particularly suitable for wearable devices. This

More information

GPS Front-End Module

GPS Front-End Module GPS Front-End Module GENERAL DESCRIPTION The NJG11PCD is a front-end module (FEM) designed for GPS applications. The NJG11PCD offers high gain, low noise figure, high linearity and very high out-band rejection

More information

2GHz BAND LOW NOISE AMPLIFIER

2GHz BAND LOW NOISE AMPLIFIER GHz BAND LOW NOISE AMPLIFIER GENERAL DESCRIPTION is a low noise amplifier GaAs MMIC designed for GHz band application, and.ghz to.ghz operation with modified schematic. This IC has the function which bypasses

More information

GPS and GLONASS Front-End Module

GPS and GLONASS Front-End Module GPS and GLONASS Front-End Module GENERAL DESCRIPTION The NJG117PCD is a front-end module (FEM) designed for GPS and GLONASS applications. The NJG117PCD offers high gain, low noise figure, high linearity

More information

LOW NOISE AMPLIFIER GaAs MMIC. -4.0dBm

LOW NOISE AMPLIFIER GaAs MMIC. -4.0dBm LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG7HB6 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP operated by single low positive

More information

2-way Active Splitter GaAs MMIC

2-way Active Splitter GaAs MMIC NJG111MD7 -way Active Splitter GaAs MMIC GENERAL DESCRIPTION The NJG111MD7 is -way active splitter with normally loop through switch GaAs MMIC for terrestrial applications, and this IC can be tuned to

More information

DPDT SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC DPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1528HD3 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as CDMA, AMPS and PCS. This switch features

More information

DPDT SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC DPDT SWITCH GaAs MMIC! GENERAL DESCRIPTION! PACKAGE OUTLINE The NJG1657MD7 is a GaAs DPDT switch featured low insertion loss, high isolation and small size package, and suited for mobile terminal applications.

More information

High Isolation SPDT SWITCH

High Isolation SPDT SWITCH High Isolation SPDT SWITCH GENERAL DESCRIPTION The NJG1697EM1 is a 1bit control GaAs high isolation SPDT switch MMIC. The NJG1697EM1 features very high isolation and low control voltage. It has integrated

More information

SPDT SWITCH GaAs MMIC

SPDT SWITCH GaAs MMIC SPDT SWITCH GaAs MMIC! GENERAL DESCRIPTION! PACKAGE OUTLINE The NJG1608KB2 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. The NJG1608KB2 is suitable for switching

More information

High Isolation SP4T SWITCH

High Isolation SP4T SWITCH High Isolation SP4T SWITCH NJG1699MD7 GENERAL DESCRIPTION The NJG1699MD7 is a GaAs high isolation SP4T switch MMIC. It features low insertion loss and very high isolation. It has integrated DC blocking

More information

SP5T SWITCH GaAs MMIC

SP5T SWITCH GaAs MMIC SP5T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1667MD7 is a GaAS SP5T switch featured low insertion loss, high isolation and small size package, and suited for mobile terminal applications. The NJG1667MD7

More information

700MHz Band Application

700MHz Band Application 7MHz Band Application SUMMARY The characteristics of 7MHz band have evaluated as follows. The evaluation circuit structure and measured data are reviewed. MEASURED DATA DC Characteristics General Condition:

More information

DPDT SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC DPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1648HB6 is a GaAs DPDT switch IC that features low loss, low current consumption and low control voltage. This IC includes logic decoder, and can be operated

More information

SPDT SWITCH GaAs MMIC

SPDT SWITCH GaAs MMIC SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1516R is a GaAs SPDT switch IC suited for antenna switch of cellular phone handset. This switch features low loss, high isolation at high power, and exhibits

More information

PDC Dual Band LNA GaAs MMIC

PDC Dual Band LNA GaAs MMIC PDC Dual Band LNA GaAs MMIC GENERAL DESCRIPTION The is a dual band low noise amplifier for 8MHz and MHz band. The band switching between 8MHz CD, A Band and MHz is made by bit control signal by using inverter

More information

30dB P IN =25dBm. 0.50dB P IN =25dBm. 33dB P IN =25dBm. 21dB

30dB P IN =25dBm. 0.50dB P IN =25dBm. 33dB P IN =25dBm. 21dB NJG1HA8 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1HA8 is a GaAs SPDT switch IC suited for antenna switch of WiMAX application and other wireless handsets. The NJG1HA8 features high power handling,

More information

DPDT SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC DPDT SWITCH GaAs MMIC NJG1528KC1 Revised Feb./16/01 Ver.2 GENERAL DESCRIPTION NJG1528KC1 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as

More information

HIGH POWER SPDT SWITCH GaAs MMIC

HIGH POWER SPDT SWITCH GaAs MMIC HIGH POWER SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1681MD7 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1681MD7 features very low insertion loss, high isolation

More information

SP4T SWITCH GaAs MMIC

SP4T SWITCH GaAs MMIC SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1519KC1 is a GaAs high power SP4T switch MMIC for antenna switch of dual mode cellular phone application such as GSM/DCS18. This switch is designed for an antenna

More information

800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC

800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC NJG14KB 8MHz BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE NJG14KB is a variable gain low noise amplifier (LNA). At 8MHz band, noise figure is 1.dB, variable gain re is 1dB and

More information

SP10T ANTENNA SWITCH GaAs MMIC

SP10T ANTENNA SWITCH GaAs MMIC SP10T ANTENNA SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1686MHH is a GaAs SP10T antenna switch MMIC suitable for LTE/3G/GSM multimode applications. This switch includes on-chip decoder circuits and low pass

More information

800MHz BAND FRONT-END GaAs MMIC

800MHz BAND FRONT-END GaAs MMIC MHz BAND FRONT-END GaAs MMIC GENERAL DESCRIPTION NJG7KC is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for MHz band cellular phone handsets. The ultra small &

More information

DPDT SWITCH GaAs MMIC

DPDT SWITCH GaAs MMIC DPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG162HE3 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as CDMA, GPS and PCS. This switch features

More information

HIGH POWER SP3T SWITCH GaAs MMIC

HIGH POWER SP3T SWITCH GaAs MMIC HIGH POWER SP3T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1682MD7 is a GaAs SP3T switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1682MD7 features very low insertion loss, high isolation

More information

NJG1175KG1. 5 GHz Low Noise Amplifier with Bypass function. H =V CTL(H), L =V CTL(L)

NJG1175KG1. 5 GHz Low Noise Amplifier with Bypass function.   H =V CTL(H), L =V CTL(L) 5 GHz Low Noise Amplifier with Bypass function FEATURES Operating frequency Operating voltage [LNA active mode] High gain Low noise figure High IIP3 Small package size f = 4900 to 5925 MHz 2.5 to 5.5 V

More information

HIGH POWER SP4T SWITCH GaAs MMIC

HIGH POWER SP4T SWITCH GaAs MMIC NJG189ME7 HIGH POWER SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG189ME7 is a high power SP4T switch MMIC suitable for LTE-U / LAA, WLAN, and LTE applications. This switch features very low insertion

More information

SP3T SWITCH GaAs MMIC

SP3T SWITCH GaAs MMIC SP3T SWITCH GaAs MMIC NJG188K94 GENERAL DESCRIPTION PACKAGE OUTLINE The NJG188K94 is a low power SP3T switch controlled by two bits signals. The low loss performance and high Isolation makes the switch

More information

SP3T SWITCH GaAs MMIC

SP3T SWITCH GaAs MMIC NJG184K64 SP3T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG184K64 is a GaAs SP3T switch MMIC which is suitable for WLAN(82.11a/b/g/n/ac) and Bluetooth applications. This MMIC switches between a common

More information

SPDT SWITCH GaAs MMIC

SPDT SWITCH GaAs MMIC NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion

More information

SPDT SWITCH GaAs MMIC

SPDT SWITCH GaAs MMIC NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion

More information

W-LAN/WiMAX Application

W-LAN/WiMAX Application 1. 2.4GHz BAND APPLICATION W-LAN/WiMAX Application 1-1 SUMMARY The characteristics of 2.4GHz band have evaluated as follows. The evaluation circuit structure and measured data are reviewed. 1-2-1 MEASURED

More information

WIDE BAND AGC AMPLIFIER GaAs MMIC

WIDE BAND AGC AMPLIFIER GaAs MMIC NJGF WIDE BAND AGC AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJGF is a GaAs MMIC designed mainly for wireless phone handsets at frequency range of 8MHz from.ghz. NJGF is a variable gain amplifier with db

More information

SPDT SWITCH GaAs MMIC

SPDT SWITCH GaAs MMIC NJG115K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG115K75 is a 1bit control SPDT switch. The switch is used for WLAN system. The switch features low insertion loss, high isolation for high frequency

More information

MEDIUM POWER AMPLIFIER GaAs MMIC

MEDIUM POWER AMPLIFIER GaAs MMIC MEDIUM POWER AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG132V is a GaAs MMIC designed mainly for the final stage power amplifier of Japanese PHS handset, but suitable digital wireless phone and wireless

More information

Satellite Broadcasting Application

Satellite Broadcasting Application Application Note NJG111MD7 Satellite Broadcasting Application 1. Summary The characterisitics of Sastellite Broadcasting (1MHz~1MHz) have evaluated as follows. The evaluation circuit structure and measured

More information

Product Specifications Approval Sheet

Product Specifications Approval Sheet TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com

More information

WIDE BAND AGC AMPLIFIER GaAs MMIC

WIDE BAND AGC AMPLIFIER GaAs MMIC NJGF WDE BAND AGC AMPLFER GaAs MMC GENERAL DESCRPTON NJGF is a GaAs MMC designed mainly for wireless phone handsets at frequency range of 8MHz from.ghz. NJGF is a variable gain amplifier with db dynamic

More information

Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter

Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter 7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram

More information

CMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description

CMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver amplifier housed in a leadless

More information

EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifier. Pin Configuration/Functional Diagram/Typical Application Circuit MAX2659 BIAS

EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifier. Pin Configuration/Functional Diagram/Typical Application Circuit MAX2659 BIAS 19-797; Rev 4; 8/11 EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifier General Description The high-gain, low-noise amplifier (LNA) is designed for GPS, Galileo, and GLONASS applications. Designed in

More information

Data Sheet. MGA-635T6 GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function 3FYM. Description. Features.

Data Sheet. MGA-635T6 GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function 3FYM. Description. Features. MGA-T GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function Data Sheet Description Avago Technologies MGA-T is a LNA designed for GPS/ISM/Wimax applications in the (.9-.)GHz frequency

More information

2-20 GHz Driver Amplifier

2-20 GHz Driver Amplifier 2-2 GHz Driver Amplifier Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver

More information

50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC

50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over

More information

CMD233C GHz Distributed Low Noise Amplifier. Features. Functional Block Diagram. Description

CMD233C GHz Distributed Low Noise Amplifier. Features. Functional Block Diagram. Description Features Functional Block Diagram Wide bandwidth Single positive supply voltage Low noise figure Pb-free RoHs compliant 4x4 QFN package Description The CMD233C4 is a wideband GaAs MMIC low noise amplifier

More information

30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC

30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC AWB589 Data Sheet 3 ~ 12 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB589, a medium power amplifier MMIC, has high linearity and high efficiency over a wide

More information

Parameter Frequency Min. Typ. Max. Units GHz GHz Attenuation Range GHz 31.5 db

Parameter Frequency Min. Typ. Max. Units GHz GHz Attenuation Range GHz 31.5 db v.37. db LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR,. - 8. GHz Typical Applications Features ATTENUATORS - SMT The HMCALP3E is ideal for: WLAN & Point-to-Multi-Point Fiber Optics & Broadband

More information

4-8 GHz Low Noise Amplifier

4-8 GHz Low Noise Amplifier 4-8 GHz Low Noise Amplifier Features Functional Block Diagram Ultra low noise figure High gain broadband performance Single supply voltage: +4. V @ 75 ma Pb-free RoHs compliant 3x3 QFN package Description

More information

OBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State)

OBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State) v.1212.5 db LSB GaAs MMIC 6-BIT DIGITAL Typical Applications The is ideal for: IF & RF Applications Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors Functional

More information

MGA-645T6 Data Sheet Description Features Component Image Typical Performance 4FYM Pin Configuration GND Top View Applications Simplified Schematic

MGA-645T6 Data Sheet Description Features Component Image Typical Performance 4FYM Pin Configuration GND Top View Applications Simplified Schematic MGA-5T Low Noise Amplifier with Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Avago Technologies MGA-5T is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA) with Bypass/

More information

1-24 GHz Distributed Driver Amplifier

1-24 GHz Distributed Driver Amplifier Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Description The CMD197C4 is a wideband GaAs MMIC driver amplifier housed in a leadless

More information

CMD167P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.0 V, T A = 25 o C, F=12 GHz

CMD167P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.0 V, T A = 25 o C, F=12 GHz Features Functional Block Diagram Low noise figure Low current consumption Single positive supply voltage Pb-free RoHs compliant 3x3 QFN package Description The CMD167P3 is a broadband MMIC low noise amplifier

More information

MGA Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package. Features. Applications. VBias

MGA Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package. Features. Applications. VBias MGA-4 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Avago Technologies MGA-4 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA) with

More information

MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C

MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated

More information

CMD157P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.

CMD157P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3. Features Functional Block Diagram Ultra low noise figure High gain broadband performance Single supply voltage: +3. V @ 52 ma Pb-free RoHs compliant 3x3 QFN package Description The CMD7P3 is a broadband

More information

5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC

5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC AWB317 Data Sheet 5 ~ 12 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB317 a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range

More information

CMD GHz Low Noise Amplifier. Features. Functional Block Diagram. Description

CMD GHz Low Noise Amplifier. Features. Functional Block Diagram. Description Features Functional Block Diagram Ultra low noise performance High linearity Small die size 2 GB 3 Vgg Vdd 4 RFIN RFOUT Description The CMD63 is a high dynamic range GaAs MMIC low noise amplifier ideally

More information

CMD GHz Low Noise Amplifier

CMD GHz Low Noise Amplifier Features Functional Block Diagram Ultra low noise figure High gain broadband performance Single supply voltage: +3. V @ 5 ma Small die size Vdd Description The CMD7 is a broadband MMIC low noise amplifier

More information

Data Sheet. AMMP to 32 GHz GaAs Low Noise Amplifier. Description. Features. Specifications (Vd=3.0V, Idd=65mA) Applications.

Data Sheet. AMMP to 32 GHz GaAs Low Noise Amplifier. Description. Features. Specifications (Vd=3.0V, Idd=65mA) Applications. AMMP-6233 18 to 32 GHz GaAs Low Noise Amplifier Data Sheet Description Avago Technologies AMMP-6233 is a high gain, lownoise amplifier that operates from 18 GHz to 32 GHz. It has a 3 db noise figure, over

More information

MGA Current Adjustable Low Noise Amplifier

MGA Current Adjustable Low Noise Amplifier Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-68563 MGA-68563 Current Adjustable Low Noise Amplifier Description The MGA-68563 is an easy to use, economical GaAs MMIC amplifier

More information

20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS

20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS Data Sheet FEATURES Low noise figure: 2 db typical High gain: 25. db typical P1dB output power: 13.5 dbm, 2 GHz to GHz High output IP3: 25.5 dbm typical Die size: 1.39 mm 1..2 mm APPLICATIONS Software

More information

EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifiers

EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifiers 19456; Rev ; 8/1 EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifiers General Description The / low-noise amplifiers (LNAs) are designed for GPS L1, Galileo, and GLONASS applications. Designed in Maxim

More information

50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC

50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC AWG115 Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG115, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a

More information

HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram

HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram v2.14 Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar Test Equipment Functional Diagram Features Wide Gain Control Range: 1 db Single

More information

HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram 7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias

More information

Features. = +25 C, Vdd = +10 V, Idd = 350 ma

Features. = +25 C, Vdd = +10 V, Idd = 350 ma HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High

More information

CMD GHz Distributed Low Noise Amplifier RFIN

CMD GHz Distributed Low Noise Amplifier RFIN - GHz Distributed Low Noise Amplifier Features Wide bandwidth Single positive supply voltage Low noise figure Small die size Description Applications Wideband communication systems Point-to-point radios

More information

6-18 GHz Low Phase Noise Amplifier

6-18 GHz Low Phase Noise Amplifier -1 GHz Low Phase Noise Amplifier Features Functional Block Diagram Wide bandwidth Low phase noise Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD24C4 is a wideband

More information

Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin connections and Package Marking

Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin connections and Package Marking MGA-31816 0.1 W High Linearity Driver Amplifier Data Sheet Description Avago Technologies MGA-31816 is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features

More information

20 MHz to 500 MHz IF Gain Block ADL5531

20 MHz to 500 MHz IF Gain Block ADL5531 20 MHz to 500 MHz IF Gain Block ADL5531 FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at

More information

MGA Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package. Features. Applications. VBias

MGA Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package. Features. Applications. VBias MGA-65606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Avago Technologies MGA-65606 is an economical, easyto-use GaAs MMIC Low Noise Amplifier

More information

Analog Devices Welcomes Hittite Microwave Corporation

Analog Devices Welcomes Hittite Microwave Corporation Analog Devices Welcomes Hittite Microwave Corporation www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.915 GaAs MMIC 6-BIT DIGITAL Typical Applications The HMC648ALP6E is ideal for:

More information

CMD119P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.6 V, T A = 25 o C, F=8GHz

CMD119P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.6 V, T A = 25 o C, F=8GHz Features Functional Block Diagram Ultra low noise figure Low current consumption High gain broadband performance Single supply voltage: +3.6 V @ 3 ma Pb-free RoHs compliant 3x3 QFN package Description

More information

GRF4001. Preliminary. Broadband LNA/Linear Driver GHz. Product Description. Features. Applications

GRF4001. Preliminary. Broadband LNA/Linear Driver GHz. Product Description. Features. Applications Product Description Features Reference: 3.3V/45mA/2.5 GHz EVB NF: 0.9 db Gain: 15.5 db OIP3: 30.5 dbm OP1dB: 16.5 dbm Flexible Bias Voltage and Current is a broadband low noise gain block designed for

More information

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma* v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use

More information

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features. = +25 C, Vdd 1, 2, 3 = +3V v.11 HMC6LC AMPLIFIER, 6-2 GHz Typical Applications The HMC6LC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military

More information

Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature

Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output

More information

Data Sheet. MGA-231T6 High-Gain GPS LNA with Variable Current and Shutdown Function 31YM. Description. Features

Data Sheet. MGA-231T6 High-Gain GPS LNA with Variable Current and Shutdown Function 31YM. Description. Features MGA-231T6 High-Gain GPS LNA with Variable Current and Shutdown Function Data Sheet Description Avago Technologies MGA-231T6 is a low-noise amplifier (LNA) designed for GPS/ISM/Wimax applications in the

More information

CMD158C GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.0 V, T A = 25 o C, F = 11 GHz

CMD158C GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.0 V, T A = 25 o C, F = 11 GHz Features Functional Block Diagram Broadband performance High output power Low current consumption Single supply voltage: +5.0 V @ 95 ma Pb-free RoHs compliant 4x4 QFN package Description The CMD158C4 is

More information

HMC468LP3 / 468LP3E v

HMC468LP3 / 468LP3E v Typical Applications 1 LSB GaAs MMIC 3-BIT DIGITAL Features The HMC468LP3 / HMC468LP3E is ideal for: Cellular; UMTS/3G Infrastructure Fixed Wireless & WLL Microwave Radio & VSAT Test Equipment Functional

More information

CMD132P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.

CMD132P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3. Features Functional Block Diagram Ultra low noise figure Low current consumption High gain broadband performance Single supply voltage: +3.6 V @ 3 ma Pb-free RoHs compliant 3x3 QFN package Description

More information

Features OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma

Features OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma 7 Typical Applications The HMC667LP2(E) is ideal for: WiMAX, WiBro & Fixed Wireless SDARS & WLAN Receivers Infrastructure & Repeaters Access Points Telematics & DMB Functional Diagram v2.11 Electrical

More information

Features OBSOLETE. Parameter Min. Typ. Max. Units. Frequency Range GHz Insertion Loss 5 7 db. Input Return Loss 16 db

Features OBSOLETE. Parameter Min. Typ. Max. Units. Frequency Range GHz Insertion Loss 5 7 db. Input Return Loss 16 db v1.611 Typical Applications The is ideal for: EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Phase Cancellation Functional Diagram Features Low RMS Phase Error: 1.2

More information

Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]

Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2] v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42

More information

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.

More information

PRELIMINARY DATA SHEET: CKRF3510MM34

PRELIMINARY DATA SHEET: CKRF3510MM34 Features: Low noise figure and high associated gain NF=0.42dB Typ., Ga=17.0dB Typ. @Vdd=3.0V, Idd=10mA, f=1.575ghz Description: Low Noise and High Gain On chip Bias supply circuit On chip ESD protection

More information

20 MHz to 500 MHz IF Gain Block ADL5531

20 MHz to 500 MHz IF Gain Block ADL5531 Data Sheet FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at 190 MHz Output 1 db compression:

More information

Data Sheet. AMMP GHz High Gain Amplifier in SMT Package. Description. Features. Applications. Package Diagram. Functional Block Diagram

Data Sheet. AMMP GHz High Gain Amplifier in SMT Package. Description. Features. Applications. Package Diagram. Functional Block Diagram AMMP- GHz High Gain Amplifier in SMT Package Data Sheet Description The AMMP- MMIC is a GaAs wide-band amplifier in a surface mount package designed for medium output power and high gain over the - GHz

More information

Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]

Features. = +25 C, Vdd = +4V, Idd = 90 ma [2] v.91 HMCLCB AMPLIFIER, 1-27 GHz Typical Applications This HMCLCB is ideal for: Features Noise Figure: 2.2 db @ 2 GHz Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation

More information

HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications

HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications v2.1 Typical Applications The HMC694LP4(E) is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment Features Wide Gain Control Range: 23 db Single Control Voltage

More information