GNSS LOW NOISE AMPLIFIER

Transcription

1 GNSS LOW NOISE AMPLIFIER NJG8HA8 GENERAL DESCRIPTION The NJG8HA8 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). This amplifier provides low noise figure, high gain and high IP operated by single low positive power supply. This IC has the function of Stand-by mode. The NJG8HA8 can be tuned to wide frequency from.ghz to.7ghz by changing the external matching components. An ultra-small and ultra-thin package of the USB-A8 is adopted. PACKAGE OUTLINE NJG8HA8 APPLICATIONS GNSS application, like GPS,Galileo,GLONASS and COMPASS W-LAN and WiMAX application FEATURES Operating frequency range.~.7ghz Low voltage operation +.7V typ. Low current consumption.ma CTL =.8V ua CTL =V High gain 9dB CTL =.8V, f=.7ghz Low noise figure.db CTL =.8V, f=.7ghz Input power at db gain compression point -.dbm CTL =.8V, f=.7ghz High input IP dbm CTL =.8V, f=.7+.7ghz Ultra-small and ultra-thin package USB-A8 (Package size:.x.x.8mm) PIN CONFIGURATION Note: Please check the Application Note for WLAN and WiMAX. (Top View) GN RFI GN Bia Circui Logi Circui RFOU VIN Pin Connection. VINV. RFOUT. GND. RFIN. GND. VCTL VCT TRUTH TABLE V CTL H L H =V CTL(H), L =V CTL(L) LNA Mode Active Mode Sleep Mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver

2 NJG8HA8 ABSOLUTE MAXIMUM RATINGS T a =+ C, Z s =Z l =ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V DD. V Inverter voltage V INV. V Control voltage V CTL. V Input power Pin V DD =.7V + dbm Power dissipation P D On PCB board, Tjmax= C mw Operating temperature T opr -~+8 C Storage temperature T stg -~+ C ELECTRICAL CHARACTERISTICS GENERAL CONDITIONS: V DD =V INV =.7V, T a =+ C, Z s =Z l =ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V DD..7. V Inverter supply voltage V INV..7. V Control voltage (High) V CTL (H)..8 V INV +. V Control voltage (Low) V CTL (L). V Operating current (Active Mode, RF OFF) Operating current (Sleep Mode, RF OFF) I DD RF OFF, V CTL =.8V -.. ma I DD RF OFF, V CTL =V - µa Inverter current I INV RF OFF, V CTL =.8V - µa Inverter current I INV RF OFF, V CTL =V - 9 µa Control current I CTL RF OFF, V CTL =.8V - µa - -

3 NJG8HA8 ELECTRICAL CHARACTERISTICS (Active Mode) GENERAL CONDITIONS: V DD =V INV =.7V, V CTL =.8V, f RF =7MHz, T a =+ C, Z s =Z l =ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq GHz Small signal gain Gain db Noise figure Input power at db gain compression point Input rd order intercept point NF Exclude PCB & connector losses (IN:.dB) -.. db P -db(in) dbm IIP f=f RF, f=f RF +khz, Pin=-dBm -. - dbm RF IN VSWR VSWRi -.. RF OUT VSWR VSWRo

4 NJG8HA8 TERMINAL INFORMATION No. SYMBOL DESCRIPTION VINV Power supply pin of the inverter circuit. RFOUT RF Output and voltage supply pin. External matching circuits and a bypass capacitor is required. L is a RF choke inductor. These elements are used as output matching circuit. GND Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin.) RFIN RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. GND VCTL Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin.) Control voltage input pin. This control pin is set to high. LNA suffers from standby state when LNA puts the changeover voltage of "Low" in a state of movement when the changeover voltage of "High" is put in this terminal. CAUTION ) Ground terminal (, ) should be connected to the ground plane as low inductance as possible. - -

5 ELECTRICAL CHARACTERISTICS (Conditions: V DD =V INV =.7V, V CTL =.8V, f RF =7MHz, T a =+ C, Z s =Z l =ohm, with application circuit) NJG8HA8 Pout vs. Pin (frf=7mhz) Gain, IDD vs. Pin (frf=7mhz) 8 Pout (dbm) - - Pout Gain (db) 8 Gain IDD 7 IDD (ma) - - P-dB(IN)=-.dBm P-dB(IN)=-.dBm Pin (dbm) Pin (dbm) Noise Figure (db).... NF NF vs. frequency (Exclude PCB, Connector Losses) Pout, IM (dbm) Pout Pout, IM vs. Pin (frf=7+7.mhz) IM IIP=+.dBm.... frequency (GHz) Pin (dbm) k factor vs. frequency k factor frequency (GHz) - -

6 NJG8HA8 ELECTRICAL CHARACTERISTICS (Conditions: V DD =V INV =.7V, V CTL =.8V, f RF =7MHz, T a =+ C, Z s =Z l =ohm, with application circuit) Gain, NF vs. VDD, VINV (frf=7mhz) -8 P-dB(IN) vs. VDD, VINV (frf=7mhz). - Gain (db) 8 Gain NF.. NF (db) P-dB(IN) (dbm) P-dB(IN) VDD, VINV (V) -.. VDD, VINV (V) OIP, IIP vs. VDD, VINV (frf=7+7.mhz, Pin=-dBm) VSWR vs. VDD, VINV (frf=7mhz) OIP (dbm) 8 OIP IIP 8 - IIP (dbm) VSWRi, VSWRo VSWRi VSWRo -.. VDD, VINV (V).. VDD, VINV (V) IDD vs. VDD, VINV (RF OFF) IDD (ma) IDD.. VDD, VINV (V) - -

7 ELECTRICAL CHARACTERISTICS (Conditions: V DD =V INV =.7V, V CTL =.8V, f RF =7MHz, T a =+ C, Z s =Z l =ohm, with application circuit) NJG8HA8 Gain, NF vs. Temperature (frf=7mhz) 7-8 P-dB(IN) vs. Temperature (frf=7mhz) Gain (db) 8 Gain NF NF (db) P-dB(IN) (dbm) P-dB(IN) Temperature ( o C) - - Temperature ( o C) OIP, IIP vs. Temperature (frf=7+7.mhz, Pin=-dBm) VSWR vs. Temperature (f=7mhz) OIP (dbm) OIP IIP (dbm) VSWRi, VSWRo VSWRi VSWRo IIP - - Temperature ( o C) - Temperature ( o C) IDD vs. Temperature (RF OFF) IDD vs. VCTL (RF OFF). IDD (ma) IDD IDD (ma). IDD +8 o C - o C - o C - o C o C. + o C + o C +8 o C - Temperature ( o C)... VCTL (V) - 7 -

8 NJG8HA8 ELECTRICAL CHARACTERISTICS (Conditions: V DD =V INV =.7V, V CTL =.8V, f RF =7MHz, T a =+ C, Z s =Z l =ohm, with application circuit) S, S S, S VSWR Zin, Zout S, S (f=mhz~ghz) S, S (f=mhz~ghz) - 8 -

9 NJG8HA8 APPLICATION CIRCUIT (Top View) RF IN L nh RFIN GND RFOUT L nh C pf RF OUT L 9nH Bias Circuit L nh C pf V DD =.7V GND Logic Circuit VCTL VINV C pf V INV =.7V V CTL =V or.8v C pf TEST PCB LAYOUT (Top View) Parts List Parts ID Notes V DD C L~L C~C MURATA (LQPT series) MURATA (GRM series) RF IN L L C L L C C RF OUT V CTL V INV PCB (FR-): t=.mm MICROSTRIP LINE WIDTH =.mm (Z =ohm) PCB SIZE=7.mmx7.mm - 9 -

10 NJG8HA8 PACKAGE OUTLINE (USB-A8).8± S S TERMINAL TREAT :Au Substrate :FR Molding material :Epoxy resin UNIT :mm WEIGHT :.mg. (MIN.).±. C. R..±..8..±...±. Photo resist coating..±.7.±. Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - -