GPS Front-End Module
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- Oswin Mark Bryan
- 5 years ago
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1 NJGPCD GPS Front-End Module GENERAL DESCRIPTION The NJGPCD is a front-end module (FEM) designed for GPS applications. Its ultra-low current consumption is particularly suitable for wearable devices. This FEM offers high gain, low noise figure, high linearity and very high out-band rejection characteristics brought by included high performance pre- SAW filter, low noise amplifier (LNA) and post- SAW filter. This FEM offers very small mounting area by included two SAW filters, only two external components and very small package HFFP-CD. PACKAGE OUTLINE NJGPCD FEATURES Low supply voltage Ultra-low current consumption High gain Low noise figure. /.V typ.. /.ma DD =. /.V, V CTL =.V.μA DD =. /.V, V CTL =V (Stand-by mode) 7. /.db typ.@v DD =. /.V, V CTL =.V, f=7mhz.7 /.db typ.@v DD =. /.V, V CTL =.V, f=7mhz High rejection.dbc to 9MHz, relative to 7MHz 7.dBc to 9MHz, relative to 7MHz 7.dBc to MHz, 7 to MHz, relative to 7MHz Small package size HFFP-CD:.mmx.mm (typ.), t=.mm (max.) RoHS compliant and Halogen Free, MSL PIN CONFIGURATION BLOCK DIAGRAM (Top View) GND VCTL VDD NC(GND) PreIN Post-Filter LNA Pre-Filter PostOUT NC (GND) 9 LNAIN PreOUT 7 GND Pin connection. GND. VCTL. VDD. NC(GND). PreIN. GND 7. PreOUT. LNAIN 9. NC(GND). PostOUT RF IN Pre-Filter V CTL LNA V DD Post-Filter RF OUT Exposed pad: GND TRUTH TABLE H =V CTL (H), L =V CTL (L) VCTL Mode H Active mode L Stand-by mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver
2 NJGPCD ABSOLUTE MAXIMUM RATINGS T a =+ C, Z s =Z l = PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Supply voltage V DD. V Control voltage V CTL. V Input power Power dissipation P IN (inband) P IN (outband) P D V DD =.V, f=7mhz V DD =.V, f= to, 7 to MHz -layer FR PCB with through-hole (.x.mm), T j = C + dbm +7 dbm mw Operating temperature T opr - to + C Storage temperature T stg - to + C ELECTRICAL CHARACTERISTICS (DC) (General conditions: T a =+ C) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage V DD. -. V Control Voltage (High) V CTL(H)... V Control Voltage (Low) V CTL(L). V Supply Current I DD Supply Current I DD Supply Current I DD Supply Current I DD RF OFF, V DD =.V, V CTL =.V RF OFF, V DD =.V, V CTL =.V RF OFF, V DD =.V, V CTL =V RF OFF, V DD =.V, V CTL =V -.. ma -..9 ma -.. μa -.. μa Control Current I CTL V CTL =.V -.. μa - -
3 NJGPCD ELECTRICAL CHARACTERISTICS (RF) General conditions: V DD =.V, V CTL =.V, f RF =7MHz, T a =+ C, Z s =Z l =, with application circuit PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Small Signal Gain Noise Figure Input Power at db Gain Compression Point Gain NF f=7mhz, Exclude PCB, Connector Losses (.9dB) f=7mhz, Exclude PCB, Connector Losses (.9dB).. - db -.. db P-dB(IN) f=7mhz dbm Input rd Order Intercept Point IIP_ f=7mhz, f=f+/-mhz, Pin=-dBm dbm Out of Band Input nd Order Intercept Point IIP_OB f=.mhz at +dbm, f=mhz at +dbm, fmeas=7.mhz dbm Out of Band Input rd Order Intercept Point IIP_OB f=7.7mhz at +dbm, f=mhz at +dbm, fmeas=7.mhz dbm 7MHz nd Harmonics fo Input jammer tone: 77.7MHz at +dbm Measure the harmonic tone at 7.MHz dbm Out-of-Band Input Power db Compression Low Band Rejection High Band Rejection WLAN Band Rejection LS Rejection P-dB(IN) _OB- P-dB(IN) _OB- BR_L BR_H BR_W BR_LS fjam=9mhz, fmeas=7mhz at Pin=-dBm fjam=7mhz, fmeas=7mhz at Pin=-dBm f=7 to 9MHz, relative to 7MHz f=7 to 9MHz, relative to 7MHz f= to MHz, relative to 7MHz f= to MHz, 7 to MHz, relative to 7MHz dbm dbm -. - dbc dbc dbc dbc RF IN Return Loss RLi f=7mhz -. - db RF OUT Return Loss RLo f=7mhz - - db - -
4 NJGPCD ELECTRICAL CHARACTERISTICS (RF) General conditions: V DD =.V, V CTL =.V, f RF =7MHz, T a =+ C, Z s =Z l =, with application circuit PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Small Signal Gain Noise Figure Input Power at db Gain Compression Point Gain NF f=7mhz, Exclude PCB, Connector Losses (.9dB) f=7mhz, Exclude PCB, Connector Losses (.9dB) db -.7. db P-dB(IN) f=7mhz dbm Input rd Order Intercept Point IIP_ f=7mhz, f=f+/-mhz, Pin=-dBm dbm Out of Band Input nd Order Intercept Point IIP_OB f=.mhz at +dbm, f=mhz at +dbm, fmeas=7.mhz dbm Out of Band Input rd Order Intercept Point IIP_OB f=7.7mhz at +dbm, f=mhz at +dbm, fmeas=7.mhz dbm 7MHz nd Harmonics fo Input jammer tone: 77.7MHz at +dbm Measure the harmonic tone at 7.MHz dbm Out-of-Band Input Power db Compression Low Band Rejection High Band Rejection WLAN Band Rejection LS Rejection P-dB(IN) _OB- P-dB(IN) _OB- BR_L BR_H BR_W BR_LS fjam=9mhz, fmeas=7mhz at Pin=-dBm fjam=7mhz, fmeas=7mhz at Pin=-dBm f=7 to 9MHz, relative to 7MHz f=7 to 9MHz, relative to 7MHz f= to MHz, relative to 7MHz f= to MHz, 7 to MHz, relative to 7MHz dbm dbm -. - dbc dbc dbc dbc RF IN Return Loss RLi f=7mhz -. - db RF OUT Return Loss RLo f=7mhz - - db - -
5 NJGPCD TERMINAL INFORMATION No. SYMBOL DESCRIPTION GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. VCTL Control voltage terminal. VDD NC(GND) Supply voltage terminal. Please connect bypass capacitor C with ground as close as possible. No connected terminal. This terminal is not connected with internal circuit. Please connect to the PCB ground Plane. PreIN RF input terminal. This terminal connects to input of pre-saw filter. GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 7 PreOUT Pre-SAW filter output terminal. This terminal connects to LNAIN with L. LNAIN 9 NC(GND) PostOUT Exposed Pad GND RF input terminal. This terminal requires only a matching inductor L, and does not require DC blocking capacitor because of integrated capacitor. No connected terminal. This terminal is not connected with internal circuit. Please connect to the PCB ground Plane. RF output terminal. This terminal requires no DC blocking capacitor since this terminal has integrated SAW that also works as DC blocking capacitor in nature. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. - -
6 ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =.V, T a = C, Z s =Z l =, with application circuit NJGPCD S, S S, S VSWR Zin, Zout - -
7 ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =.V, T a = C, Z s =Z l =, with application circuit NJGPCD NF, Gain vs. frequency (VDD=.V, VCTL=.V) Noise Figure (db) NF Gain Gain (db) (NF, Gain: Exclude PCB, Connector Losses) frequency (GHz) S vs. Frequency (V DD =.V, V CTL =.V) S vs. Frequency (V DD =.V, V CTL =.V) - - S (db) S (db) Frequency (GHz) Frequency (GHz) Pout, IDD vs. Pin (VDD=.V, VCTL=.V, frf=7mhz) 9 Pout, IM vs. Pin (VDD=.V, VCTL=.V, f=7mhz, f=7mhz) P-dB(OUT)=+.9dBm OIP=+.dBm Pout Pout (dbm) Pout IDD 7 IDD (ma) Pout, IM (dbm) IM - P-dB(IN)=-.9dBm Pin (dbm) - IIP=-.dBm Pin (dbm) - 7 -
8 ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =.V, T a = C, Z s =Z l =, with application circuit NJGPCD Out-of-band P-dB (fjam=9mhz) (VDD=.V, VCTL=.V, f meas =7MHz at Pin=-dBm) Out-of-band P-dB (fjam=7mhz) (VDD=.V, VCTL=.V, f meas =7MHz at Pin=-dBm) Gain (db) Gain Gain (db) Gain P-dB(IN)_OB > +.dbm (Gain: Exclude PCB, Connector Losses) Pin at 9MHz (dbm) P-dB(IN)_OB > +.dbm (Gain: Exclude PCB, Connector Losses) Pin at 7MHz (dbm) Out-of-band IIP (V DD =.V, V CTL =.V, f meas =7.MHz, f=.mhz, f=mhz) Out-of-band IIP (VDD=.V, VCTL=.V, fmeas=7.mhz, f=7.7mhz, f=mhz) Pout, IM (dbm) Pout - - IM - - IIP_OB=+.dBm Pin (dbm) Pout, IM (dbm) Pout IM - IIP_OB=+7.dBm Pin (dbm) nd Harmonics (V DD =.V, V CTL =.V, fin=77.7mhz, f meas =7.MHz) nd Harmonics(dBm) fo=-.dbm Pin(dBm) - -
9 ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =.V, T a = C, Z s =Z l =, with application circuit NJGPCD S, S S, S VSWR Zin, Zout - 9 -
10 ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =.V, T a = C, Z s =Z l =, with application circuit NJGPCD NF, Gain vs. frequency (VDD=.V, VCTL=.V) NF Noise Figure (db) Gain Gain (db) (NF, Gain: Exclude PCB, Connector Losses) frequency (GHz) S vs. Frequency S vs. Frequency (V DD =.V, V CTL =.V) (V DD =.V, V CTL =.V) - - S (db) S (db) Frequency (GHz) Frequency (GHz) Pout, IDD vs. Pin (VDD=.V, VCTL=.V, frf=7mhz) Pout, IM vs. Pin (VDD=.V, VCTL=.V, f=7mhz, f=7mhz) Pout (dbm) 7 P-dB(OUT)=+.9dBm - - Pout - IDD - P-dB(IN)=-.9dBm Pin (dbm) IDD (ma) Pout, IM (dbm) OIP=+.dBm Pout - - IM - - IIP=-.dBm Pin (dbm) - -
11 ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =.V, T a = C, Z s =Z l =, with application circuit NJGPCD Out-of-band P-dB (fjam=9mhz) (VDD=.V, VCTL=.V, f meas =7MHz at Pin=-dBm) Out-of-band P-dB (fjam=7mhz) (VDD=.V, VCTL=.V, f meas =7MHz at Pin=-dBm) Gain (db) Gain Gain (db) Gain P-dB(IN)_OB > +.dbm (Gain: Exclude PCB, Connector Losses) Pin at 9MHz (dbm) P-dB(IN)_OB > +.dbm (Gain: Exclude PCB, Connector Losses) Pin at 7MHz (dbm) Out-of-band IIP (V DD =.V, V CTL =.V, f meas =7.MHz, f=.mhz, f=mhz) Out-of-band IIP (VDD=.V, VCTL=.V, fmeas=7.mhz, f=7.7mhz, f=mhz) Pout, IM (dbm) Pout IM - IIP_OB=+.7dBm Pin (dbm) Pout, IM (dbm) Pout IM - IIP_OB=+.dBm Pin (dbm) nd Harmonics (V DD =.V, V CTL =.V, fin=77.7mhz, f meas =7.MHz) nd Harmonics(dBm) fo=-.7dbm Pin(dBm) - -
12 NJGPCD ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =.V, Z s =Z l =, with application circuit Gain, NF vs. Temperature (VDD=.V, VCTL=.V, frf=7mhz). Return Loss vs. Temperature (VDD=.V, VCTL=.V, frf=7mhz) RLout Gain (db) Gain NF.. Noise Figure (db) Return Loss (db) RLin. (Gain, NF: Exclude PCB, Connector Losses) - - Rejection vs. Temperature (VDD=.V, VCTL=.V) Rejection vs. Temperature (VDD=.V, VCTL=.V) 9 9MHz 9 Rejection (dbc) 7 9MHz MHz Rejection (dbc) 7 7~MHz ~MHz IDD vs. Temperature (VDD=.V, VCTL=.V/V, RF OFF). k-factor vs. frequency (V DD =.V, V CTL =.V) IDD mode IDD (active mode) IDD (stand-by mode) IDD mode k-factor o C - o C o C + o C + o C + o C frequency(ghz) - -
13 NJGPCD ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =.V, Z s =Z l =, with application circuit - P-dB(IN) vs. Temperature (VDD=.V, VCTL=.V, frf=7mhz) OIP, IIP vs. Temperature (VDD=.V, VCTL=.V, f=7mhz, f=7mhz, Pin=-dBm) - P-dB(IN) (dbm) P-dB(IN) OIP (dbm) OIP IIP IIP (dbm) Out-of-band IIP vs. Temperature (VDD=.V, VCTL=.V, fmeas=7.mhz, f=.mhz at Pin=+dBm, f=mhz at Pin=+dBm) Out-of-band IIP vs. Temperature (VDD=.V, VCTL=.V, fmeas=7mhz, f=7mhz at Pin=+dBm, f=mhz at Pin=+dBm) Out-of-band IIP (dbm) 9 7 IIP_OB Out-of-band IIP (dbm) 7 IIP_OB - - nd Harmonics vs. Temperature (VDD=.V, VCTL=.V, frf=77.7mhz) Out of band P-dB vs. Temperature (VDD=.V, VCTL=.V, frf=7mhz) nd Harmonics (dbm) fo Out of band P-dB (dbm) * P-dB(fjam=7MHz, > + o C) are over +dbm. * P-dB(fjam=9MHz) are over +dbm
14 NJGPCD ELECTRICAL CHARACTERISTICS Conditions: V CTL =.V, T a = C, Z s =Z l =, with application circuit Gain, NF vs. VDD (VCTL=.V, frf=7mhz) Return Loss vs. VDD (VCTL=.V, frf=7mhz) Gain (db) 7 Gain NF.. Noise Figure (db) Return Loss (db) RLout RLin. (Gain, NF: Exclude PCB, Connector Losses) Rejection vs. VDD (VCTL=.V) 9 LightSquared Band Rejection vs. VDD (VCTL=.V) Rejection (dbc) 7 7 9MHz 7MHz MHz Rejection (dbc) 7 7 7~MHz ~MHz IDD vs. VDD (VCTL=.V/V, RF OFF). IDD mode IDD (active mode) IDD (stand-by mode)..... IDD mode
15 NJGPCD ELECTRICAL CHARACTERISTICS Conditions: V CTL =.V, T a = C, Z s =Z l =, with application circuit - P-dB(IN) vs. VDD (VCTL=.V, frf=7mhz) OIP, IIP vs. VDD (VCTL=.V, f=7mhz, f=7mhz, Pin=-dBm) - P-dB(IN) (dbm) P-dB(IN) OIP (dbm) OIP IIP - - IIP (dbm) Out-of-band IIP vs. VDD (VCTL=.V, fmeas=7.mhz, f=.mhz at Pin=+dBm, f=mhz at Pin=+dBm) Out-of-band IIP vs. VDD (VCTL=.V, fmeas=7mhz, f=7mhz at Pin=-dBm, f=mhz at Pin=-dBm) Out-of-band IIP (dbm) 9 7 IIP_OB Out-of-band IIP (dbm) 7 IIP_OB nd Harmonics vs. VDD (VCTL=.V, frf=77.7mhz) Out of band P-dB vs. VDD (VCTL=.V, frf=7mhz) nd Harmonics (dbm) fo Out of Band P-dB (dbm) fjam=7mhz * P-dB(fjam=7MHz) is over +dbm at VDD >.V -... * *P-dB(fjam=9MHz) is over +dbm
16 NJGPCD APPLICATION CIRCUIT (Top View) Post-Filter RF OUT GND Post/OUT V CTL VCTL NC(GND) 9 V DD C pf VDD NC(GND) LNA LNAIN Pre/OUT RF IN Pre/IN Pre-Filter 7 GND L nh Parts list Parts ID L C Manufacture LQWA Series (MURATA) GRM Series (MURATA) - -
17 NJGPCD EVALUATION BORAD (Top View) V DD V CTL PCB Substrate: FR- Thickness:.mm Microstrip line width:.mm (Z = ) Size:.mm x.mm RF IN C RF OUT L <PCB LAYOUT GUIDELINE> PCB PKG Terminal PKG Outline GND Via Hole Diameter =.mm,.mm PRECAUTIONS Please layout ground pattern under this FEM in order not to couple with RFIN and RFOUT terminal. All external parts should be placed as close as possible to the FEM. For good RF performance, all GND terminals must be connected to PCB ground plane of substrate, and via-holes for GND should be placed near the FEM
18 NJGPCD RECOMMENDED FOOTPRINT PATTERN (HFFP-CD PACKAGE) <Reference> PKG :.mm x.mm : Land :Mask (Open area) *Metal mask thickness : m :Resist(Open area) Units : mm Metal MASK Detail - -
19 NJGPCD NOISE FIGURE MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer Noise Source Setting the NF analyzer Measurement mode form Device under test : Agilent N97A : Agilent A System downconverter : off Mode setup form Sideband : Amplifier : LSB Averages : Average mode Bandwidth Loss comp Tcold : Point : MHz : off : setting the temperature of noise source (.K) NF Analyzer (Agilent N97A) Noise Source (Agilent A) Preamplifier NJGUA Gain db NF.dB * Preamplifier is used to improve NF Input ( ) Noise Source Drive Output measurement accuracy. * Noise source, preamplifier and NF analyzer are connected directly. Calibration setup NF Analyzer (Agilent N97A) Noise Source (Agilent A) Preamplifier NJGUA Gain db NF.dB * Noise source, DUT, preamplifier IN DUT OUT Input ( ) Noise Source Drive Output and NF analyzer are connected directly. Measurement Setup - 9 -
20 NJGPCD PACKAGE OUTLINE (HFFP-CD) TOP VIEW SIDE VIEW BOTTOM VIEW Package Size :.±.mm.mm max. Electrode Dimensions clearance : ±.mm Unit Substrate Terminal treat Lid Weight (typ.) : mm : Ceramic : Au : SnAg/Kovar/Ni :.mg Exposed PAD Ground connection is required. Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. This product is hollow seal package type, and it is with the structure susceptible to stress from the outside. Therefore, note the following in relation to the contents, after conducting an evaluation, please use.. After mounting this product, to implement the potting and transfer molding, please the confirmation of resistance to temperature changes and shrinkage stress involved in the molding.. When mounted on the product, collet diameter please use more than mmφ. In addition, the value of static load is recommended mounting less than N.. For dynamic load at the time of mounting, please use it after confirming in consideration of the contact area / speed / load. - -
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NJG115K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG115K75 is a 1bit control SPDT switch. The switch is used for WLAN system. The switch features low insertion loss, high isolation for high frequency
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SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1519KC1 is a GaAs high power SP4T switch MMIC for antenna switch of dual mode cellular phone application such as GSM/DCS18. This switch is designed for an antenna
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DPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG162HE3 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as CDMA, GPS and PCS. This switch features
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NJG1HA8 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1HA8 is a GaAs SPDT switch IC suited for antenna switch of WiMAX application and other wireless handsets. The NJG1HA8 features high power handling,
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SP5T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1667MD7 is a GaAS SP5T switch featured low insertion loss, high isolation and small size package, and suited for mobile terminal applications. The NJG1667MD7
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MHz BAND FRONT-END GaAs MMIC GENERAL DESCRIPTION NJG7KC is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for MHz band cellular phone handsets. The ultra small &
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7MHz Band Application SUMMARY The characteristics of 7MHz band have evaluated as follows. The evaluation circuit structure and measured data are reviewed. MEASURED DATA DC Characteristics General Condition:
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NJG14KB 8MHz BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE NJG14KB is a variable gain low noise amplifier (LNA). At 8MHz band, noise figure is 1.dB, variable gain re is 1dB and
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MEDIUM POWER AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG132V is a GaAs MMIC designed mainly for the final stage power amplifier of Japanese PHS handset, but suitable digital wireless phone and wireless
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NJGF WIDE BAND AGC AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJGF is a GaAs MMIC designed mainly for wireless phone handsets at frequency range of 8MHz from.ghz. NJGF is a variable gain amplifier with db
More informationFeatures OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
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NJGF WDE BAND AGC AMPLFER GaAs MMC GENERAL DESCRPTON NJGF is a GaAs MMC designed mainly for wireless phone handsets at frequency range of 8MHz from.ghz. NJGF is a variable gain amplifier with db dynamic
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Functional Block Diagram Features 4 High Efficient Power Amplifier: 41% at Pout= 23dBm -PA P-1dB: +21dBM Typical @ +3.3V-PA Low Noise Amplifier (NF typical 1.8dB)-LNA Low Insertion Loss:0.4dB@ 2.45GHz-Switch
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HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
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v.37. db LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR,. - 8. GHz Typical Applications Features ATTENUATORS - SMT The HMCALP3E is ideal for: WLAN & Point-to-Multi-Point Fiber Optics & Broadband
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v1.314 Typical Applications Features The is ideal for: Test Instrumentation Microwave Radio & VSAT Telecom Infrastructure Military & Space Fiber optics Functional Diagram P1dB Output Power: +27 dbm Psat
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v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
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v.1212.5 db LSB GaAs MMIC 6-BIT DIGITAL Typical Applications The is ideal for: IF & RF Applications Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors Functional
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Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver amplifier housed in a leadless
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v.61 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Features Saturated Output Power:.5 dbm @ 21% PAE High Output IP3: 34.5 dbm High Gain:.5
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More informationFeatures OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma
7 Typical Applications The HMC667LP2(E) is ideal for: WiMAX, WiBro & Fixed Wireless SDARS & WLAN Receivers Infrastructure & Repeaters Access Points Telematics & DMB Functional Diagram v2.11 Electrical
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v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control
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5 Typical Applications The HMC47LP3(E) is ideal for: Cellular; UMTS/3G Infrastructure ISM, MMDS, WLAN, WiMAX Microwave Radio & VSAT Test Equipment and Sensors Functional Diagram HMC47LP3 / 47LP3E v4.118
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v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Typical Applications The HMC86F is ideal for Test Instrumentation General Communications Radar Functional Diagram Features High Psat: +38. dbm Power Gain at Psat:
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v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
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Data Sheet FEATURES Low noise figure: 2 db typical High gain: 25. db typical P1dB output power: 13.5 dbm, 2 GHz to GHz High output IP3: 25.5 dbm typical Die size: 1.39 mm 1..2 mm APPLICATIONS Software
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Typical Applications Features The HMC196LP3E is suitable for: Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram High Output Power: 12 dbm Low Input Power Drive: -2 to
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v2.1 Typical Applications The HMC694LP4(E) is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment Features Wide Gain Control Range: 23 db Single Control Voltage
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v.7 HMCLC Typical Applications The HMCLC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
More informationFeatures. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
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Typical Applications This is ideal for: Features Low Noise Figure: 1.8 db Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram High Gain: 19 db High
More informationFeatures. = +25 C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications Functional Diagram The HMC36LP3 / HMC36LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF
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v..5 LSB GaAs MMIC 6-BIT DIGITAL Typical Applications The is ideal for: 3G Infrastructure & access points Cellular/3G, LTE & UMB WiMAX, WiBN & Fixed Wireless Test Equipment and Sensors GSM, WCDMA & TD-SCDMA
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HMC37SC7E v1.1.3-3. GHz Typical Applications The HMC37SC7E is ideal for: Cellular/PCS/3G WCS, mmds & ism Fixed Wireless & WLAN Private Land Mobile Radio Functional Diagram Features Single Supply: Vdd =
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Data Sheet FEATURES Fixed gain of 17.4 db Broadband operation from 3 MHz to 6 GHz Input/output internally matched to Ω Integrated bias control circuit OIP3 of 34.9 dbm at 9 MHz P1dB of 17.6 dbm at 9 MHz
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S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over
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9 13 16 FEATURES High saturated output power (PSAT): 41.5 dbm typical High small signal gain: db typical High power gain for saturated output power:.5 db typical Bandwidth: 2.7 GHz to 3.8 GHz High power
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7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias
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Typical Applications The is ideal for: 3G Infrastructure & access points Cellular/3G, LTE & UMB WiMAX, WiBN & Fixed Wireless Test Equipment and Sensors GSM, WCDMA & TD-SCDMA Functional Diagram Features.5
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v1.611 Typical Applications The is ideal for: EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Phase Cancellation Functional Diagram Features Low RMS Phase Error: 1.2
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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
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Typical Applications Functional Diagram The HMC32LP3 / HMC32LP3E is ideal for basestation receivers: GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio HMC32LP3 / 32LP3E AMPLIFIER, 00-1000 MHz Features
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Data Sheet FEATURES Conversion gain: db typical Sideband rejection: dbc typical Output P1dB compression at maximum gain: dbm typical Output IP3 at maximum gain: dbm typical LO to RF isolation: db typical
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