5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC
|
|
|
- Marcia Hubbard
- 5 years ago
- Views:
Transcription
1 AWB317 Data Sheet 5 ~ 12 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB317 a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 12 MHz, being suitable for use in the fiber receiver, distribution amplifiers and drop amplifiers of CATV. The amplifier is available in an SOT89 package and passes through the stringent 1% DC & RF test via an automated test handler. 1.2 Features 5 ~ 12 MHz Bandwidth 17.5 db Gain at 5 MHz Output Power: 95 db V 1.9 db NF at 5MHz Robust under Hard Operating Conditions +5 V, 112 ma Supply 1.3 Applications CATV forward at 5 ~ 12 MHz CATV reverse at 5 ~ 3 MHz Optical Node, FTTH, RFoG 1.4 Package Profile & RoHS Compliance SOT89, 4.5x4. mm 2, surface mount RoHS-compliant 1/19 ASB Inc. sales@asb.co.kr February 217
2 2. Summary on Products Performances 2.1 Typical Performance Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Reverse Forward Unit Frequency MHz Noise Figure db Gain db S db S db CSO ), 6 2) dbc CTB ), 73 2) dbc Current 112 ma Device Voltage +5 V 1) Pout = 95 db V for CENELEC-42. 2) Pout = 11 db V for CENELEC-42, at 6 V, 14 ma bias condition. 2.2 Product Specification Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Min Typ Max Unit Frequency 5 MHz Noise Figure db Gain db S db S db Current ma Device Voltage +5 V 2.3 Pin Configuration Pin Description Simplified Outline 1 RF_IN 2 Ground 3 RF_OUT & Bias 2/19 ASB Inc. sales@asb.co.kr February 217
3 2.4 Absolute Maximum Ratings Parameters Operation Case Temperature Storage Temperature Device Voltage Maximum Current Operation Junction Temperature Input RF Power (CW, 75 matched)* Max. Ratings -4 to 85 C -4 to 15 C +7 V 21 ma +15 C +25 dbm The operation of this device in excess of any of these limits may cause permanent damage. * Refer to the max. input RF power data at The max. input RF power, in principle, depends upon application frequency, matching circuit, and device voltage. 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 44 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 75 V MM Class A Voltage Level: 1 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 26 C reflow (Intentionally Blanked) 3/19 ASB Inc. sales@asb.co.kr February 217
4 3. Application: 5 ~ 1 MHz (CATV forward, V supply = +5 V) 3.1 Application Circuit & Evaluation Board Vdevice = +5 V C4 L1 RF IN C1 L2 L3 C2 RF OUT AWB317 C3 PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3.5 pf 63 Matching capacitor Murata C4 1 F 85 Decoupling capacitor Murata L1 1 H 126 RF choke inductor Murata L2 8.2 nh 63 Matching inductor Murata L3 4.7 nh 63 Matching inductor Murata 4/19 ASB Inc. sales@asb.co.kr February 217
5 3.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Forward Unit Frequency MHz Noise Figure db Gain db S db S db CSO 61 1), 6 2) dbc CTB 82 1), 73 2) dbc Current 112 ma Device Voltage +5 V 1) Pout = 95 db V for CENELEC-42. 2) Pout = 11 db V for CENELEC-42, at 6 V, 14 ma bias condition. 3.3 Plot of S-parameters & Stability Factor S-parameters (db) S22 S11 S21 S K Stability Factor, K 5/19 ASB Inc. sales@asb.co.kr February 217
6 3.4 Plots of Noise Figure and Performances with Temperature NF (db) NF Gain (db) C +25 C +85 C S11 (db) -2-4 C S22 (db) C C +85 C C +85 C Frequency = 5 MHz Current (ma) 11 Gain (db) Temperature ( C) Temperature ( C) 6/19 ASB Inc. sales@asb.co.kr February 217
7 5 4 Frequency = 5 MHz NF (db) Temperature ( C) (Intentionally Blanked) 7/19 ASB Inc. sales@asb.co.kr February 217
8 4. Application: 5 ~ 12 MHz (CATV forward, V supply = +5 V) 4.1 Application Circuit & Evaluation Board Vdevice = +5 V C5 RF IN C1 C2 C3 R1 L1 AWB317 L2 L3 C4 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C4 1 F 63 DC blocking capacitor Murata C2.3 pf 42 Matching capacitor Murata C3 33 pf 63 Matching capacitor Murata C5 1 F 85 Decoupling capacitor Murata L1 6.8 nh 63 Matching inductor Murata L2 1 H 126 RF choke inductor Murata L3 5.6 nh 63 Matching inductor Murata R Matching resistor Samsung 8/19 ASB Inc. sales@asb.co.kr February 217
9 4.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Forward Unit Frequency MHz Noise Figure db Gain db S db S db Current 112 ma Device Voltage +5 V 4.3 Plot of S-parameters & Stability Factor S-parameters (db) S11 S22 S21 K S Stability Factor, K 9/19 ASB Inc. sales@asb.co.kr February 217
10 5. Application: 5 ~ 1 MHz (CATV forward, S11, S22 < -2 db, V supply = +5 V) 5.1 Application Circuit & Evaluation Board Vdevice = +5 V C3 RF IN C1 R1 L2 L1 L3 R2 C2 RF OUT R3 AWB317 L4 PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-B2 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 1 H 126 RF choke inductor Murata L2 8.2 nh 63 Matching inductor Murata L3 4.7 nh 63 Matching inductor Murata L4 22 nh 63 Matching inductor Samsung R1, R Matching resistor Samsung R Matching resistor Samsung 1/19 ASB Inc. sales@asb.co.kr February 217
11 5.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Forward Unit Frequency MHz Noise Figure db Gain db S db S db Output IP3 1) dbm Output IP2 1), 2) 61 dbm Output P1dB dbm Current 112 ma Device Voltage +5 V 1) OIP3 and OIP2 are measured with two tones at an output power of +7 dbm/tone separated by 6 MHz. 2) OIP2 is measured at F1 + F2 frequency. (F1 = 4 MHz, F2 = 45 MHz) 5.3 Plot of S-parameters & Stability Factor S-parameters (db) S22 S21 S12 S11 K Stability Factor, K 11/19 ASB Inc. sales@asb.co.kr February 217
12 6. Application: 5 ~ 12 MHz (CATV forward, S11, S22 < -18 db, V supply = +5 V) 6.1 Application Circuit & Evaluation Board Vdevice = +5 V C4 L1 C2 RF IN C1 R1 L2 L3 C3 RF OUT AWB317 L4 R2 R3 L5 PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-B23 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C3 1 F 63 DC blocking capacitor Murata C2 12 pf 63 Matching capacitor Murata C4 1 F 85 Decoupling capacitor Murata L1 1 H 126 RF choke inductor Murata L2 6.8 nh 63 Matching inductor Murata L3 8.2 nh 63 Matching inductor Murata L4 68 nh 63 Matching inductor Murata L5 27 nh 63 Matching inductor Murata R Matching resistor Samsung R Matching resistor Samsung R Matching resistor Samsung 12/19 ASB Inc. sales@asb.co.kr February 217
13 6.1 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Forward Unit Frequency MHz Noise Figure db Gain db S db S db Output IP3 1) dbm Output IP2 1), 2) 6 dbm CSO 3) 68 dbc CTB 3) 96 dbc Current 112 ma Device Voltage +5 V 1) OIP3 and OIP2 are measured with two tones at an output power of +8 dbm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. (F1 = 4 MHz, F2 = 45 MHz) 3) The CSO, CTB value is estimated based upon theory at NTSC-79, Pout=85 db V. Mesured data to be updated soon. 6.2 Plot of S-parameters & Stability Factor S-parameters (db) S22 S21 S12 K S Stability Factor, K 13/19 ASB Inc. sales@asb.co.kr February 217
14 7. Application: 5 ~ 3 MHz (CATV reverse, Vsupply = +5 V) 7.1 Application Circuit & Evaluation Board PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-B2 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 22 H 126 RF choke inductor Murata L2 4.7 H 63 Matching inductor Samsung L3 6.8 H 63 Matching inductor Samsung R Matching resistor Samsung R Matching resistor Samsung 14/19 ASB Inc. sales@asb.co.kr February 217
15 7.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Reverse Unit Frequency MHz Noise Figure db Gain db S db S db Output P1dB dbm Output IP3 1) dbm Output IP2 1), 2) dbm Current 112 ma Device Voltage +5 V 1) OIP3 and OIP2 are measured with two tones at the output power of +5 dbm/tone separated by 1 MHz. 2) OIP2 is measured at F1+F2 Frequency. 7.3 Plot of S-parameters & Stability Factor 15/19 ASB Inc. sales@asb.co.kr February 217
16 7.4 Plots of Noise Figure and Performances with Temperature 2 19 Gain (db) C +25 C +85 C S11 (db) C +25 C +85 C S22 (db) C +25 C +85 C Frequency = 5 MHz Current (ma) 11 Gain (db) Temperature ( C) Temperature ( C) 16/19 ASB Inc. sales@asb.co.kr February 217
17 4 Frequency = 5 MHz 3 NF (db) Temperature ( C) (Intentionally Blanked) 17/19 ASB Inc. sales@asb.co.kr February 217
18 8. Package Outline (SOT89, 4.5x4.x1.5 mm) AWB317 Pxxxx Part No. Lot No. Symbols Dimensions (In mm) MIN NOM MAX A L b b C D D E E e H S e Surface Mount Recommendation (In mm) NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. Recommended is that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 18/19 ASB Inc. sales@asb.co.kr February 217
19 1. Recommended Soldering Reflow Profile 26 C 2~4 sec 2 C Ramp-up (3 C/sec) Ramp-down (6 C/sec) 15 C 6~18 sec 11. Family Products Information ASB s AWB-series single-ended CATV amplifiers are available in different gain levels such as 12 db, 17 db, and 2 db in which they are categorized by two groups according to the device voltage, 5 V and 8 V, so that a user can select the amplifier for different gain stages to design their system with ease. In addition, AWB3xx group for 5 V and AWB5xx group for 8 V are provided by almost the same external matching circuit and in a SOT89 package. Part Number Description Package Type AWB312 5 ~ 6 V, 12 db gain CATV amplifier SOT89 AWB317 5 V, 17 db gain CATV amplifier SOT89 AWB319 5 V, 2 db gain CATV amplifier SOT89 AWB512 8 V, 12 db gain CATV amplifier SOT89 AWB517 8 V, 17 db gain CATV amplifier SOT89 AWB519 8 V, 2 db gain CATV amplifier SOT89 (End of Datasheet) Copyright ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 19/19 ASB Inc. sales@asb.co.kr February 217
30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC
AWB589 Data Sheet 3 ~ 12 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB589, a medium power amplifier MMIC, has high linearity and high efficiency over a wide
50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over
50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
AWG115 Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG115, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a
50 ~ 1200 MHz Gain Adjustable Trans-impedance Amplifier MMIC
ASA6B Data Sheet 5 ~ MHz Gain Adjustable Trans-impedance Amplifier MMIC. Product Overview. General Description ASA6B, a trans-impedance amplifier (TIA) with voltage controlled attenuator, has a high linearity
Monolithic Amplifier PGA Flat Gain, High Dynamic Range to 1.5 GHz. The Big Deal
Flat Gain, High Dynamic Range Monolithic Amplifier 75Ω 0.05 to 1.5 GHz The Big Deal High IP3 and IP2 Flat Gain / Excellent Return Loss Low Noise Figure SOT-89 PACKAGE Product Overview (RoHS compliant)
SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block
Product Description Sirenza Microdevices SBB-389Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C
MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated
3 OIP3 _ measured with two tones at an output of 9dBm per tone separated by 1 MHz.
Device Features OIP3 = 36.9dBm @ 950 MHz Gain = 17.1 db @ 950 MHz Output P1 = 19.5 dbm @950 MHz CTB = 80.0 dbc @ 300MHz CTO = 64.0 dbc @ 300MHz Patented temperature compensation Lead-free/RoHS-compliant
TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block
50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
30 MHz to 6 GHz RF/IF Gain Block ADL5611
Data Sheet FEATURES Fixed gain of 22.2 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 4. dbm at 9 MHz P1dB
30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
PW118 InGaP HBT IF Amplifier
PW8 Features Applications Functional Diagram - MHz 9 db Gain at 7MHz +.8 dbm PdB + dbm Output IP Single Voltage Supply Lead-free / Green / RoHS- compliant SOT-89 Package Description IF Amplifier VHF/UHF
ECG055B-G InGaP HBT Gain Block
Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless Product Features SOT-89 Package Style Functional Block Diagram
Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]
![Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]](/thumbs/87/97046026.jpg "Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]")
HMC754SGE v.49 Typical Applications The HMC754SGE is ideal for: CATV / Broadband Infrastructure Test & Measurement Equipment Line Amps and Fiber Nodes Customer Premise Equipment Functional Diagram Output
30 MHz to 6 GHz RF/IF Gain Block ADL5610
Data Sheet FEATURES Fixed gain of 18.4 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 38.8 dbm at 9 MHz P1dB
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features OIP3 = 43.0 dbm @ 900 MHz Gain = 20.0 db @ 900 MHz Output P1 db = 24.5 dbm @ 900 MHz 50 Ω Cascadable Lead-free/RoHS-compliant SOT-89 SMT package Product Description BeRex s BT09AG is a
TAT Ω phemt Adjustable Gain RF Amplifier
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block Product Features Gain, return loss and bias externally
30 MHz to 6 GHz RF/IF Gain Block ADL5544
Data Sheet FEATURES Fixed gain of 17.4 db Broadband operation from 3 MHz to 6 GHz Input/output internally matched to Ω Integrated bias control circuit OIP3 of 34.9 dbm at 9 MHz P1dB of 17.6 dbm at 9 MHz
AG303-63PCB. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz + dbm PdB @ 9 MHz +6 dbm OIP @ 9 MHz Single Voltage Supply Internally matched to Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature
v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
QPB7400SR QPB7400PCK. CATV 75Ω Adjustable Low Gain (9 11dB) RF Amplifier. Product Overview. Key Features. Functional Block Diagram.
Product Overview The is a low-cost RF amplifier designed for applications from 47 to 1218 MHz. The balance of low noise and distortion provides an ideal solution for a wide range of broadband amplifiers
AG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz +. dbm PdB @ 9 MHz +6 dbm OIP@ 9 MHz Single Voltage Supply Internally matched to Ω Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features OIP3 = 41.0 dbm @ 1900 MHz Gain = 15.5 db @ 1900 MHz Output P1 db = 25.5 dbm @ 1900 MHz 50 Ω Cascadable Lead-free/RoHS-compliant SOT-89 SMT package Product Description BeRex s BT09VG is
Typical Performance 1. IS-95C ACPR dbm WCDMA ACLR dbm
Device Features OIP3 = 45.0 dbm @ 1900 MHz Gain = 15.0 db @ 1900 MHz Output P1 db = 27.5 dbm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protection Circuit Lead-free/RoHS-compliant SOT-89 SMT package
20 MHz to 6 GHz RF/IF Gain Block ADL5542
FEATURES Fixed gain of db Operation up to 6 GHz Input/output internally matched to Ω Integrated bias control circuit Output IP3 46 dbm at MHz 4 dbm at 9 MHz Output 1 db compression:.6 db at 9 MHz Noise
CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E
Dual CATV 5MHz to 1MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-1Z is a high performance GaAs HBT MMIC amplifier.
RF OUT / N/C RF IN / V G
MAAM-111 MHz - 2 GHz Rev. V2 Features Functional Schematic 12 db Gain Ω Input / Output Match over Gain Range 3 db Gain Control with to -2 V Control +18 dbm Output Power + V, -. V DC, 7 ma Lead-Free 1.
ECG002 InGaP HBT Gain Block
Product Features DC 6 GHz 20 db Gain @ 1 GHz +15.5 dbm P1dB @ 1 GHz +29 dbm OIP3 @ 1 GHz 3.8 db Noise Figure Internally matched to 50 Ω Robust 1000V ESD, Class 1C Lead-free/green/RoHS-compliant SOT-86,
DC to 1000 MHz IF Gain Block ADL5530
Data Sheet FEATURES Fixed gain of 16. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power supply 3 V or
Amplifier Configuration
Dual CATV Broadband High Linearity SiGe HBT Amplifier CGA-33Z DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-33Z is a high performance Silicon Germanium
TQP DC 6 GHz Gain Block
Product Description The is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 19 db gain, +31.7 dbm OIP3,
ADA1200 Linear Amplifier PRELIMINARY DATA SHEET - Rev 1.3
Linear Amplifier FEATURES 12 db Gain 50 to 1000 MHz Frequency Range Noise Figure: 2.3 db Single +5 V Supply Small SOT-89 Package RoHS Compliant/Lead-free APPLICATIONS Low Noise Amplifier for CATV Set-Top
Broad Band: 5 to 300 MHz 5 to 300 MHz bandwidth covers primary CATV applications such as DOCSIS 3.1
Flat Gain, High Dynamic Range Monolithic Amplifier 75Ω 5 to 300 MHz The Big Deal High IP3 Flat Gain / Excellent Return Loss Low Noise Figure SOT-89 PACKAGE Product Overview (RoHS compliant) is an advanced
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC476SC7 / 476SC7E v4.814 Typical
20 MHz to 500 MHz IF Gain Block ADL5531
20 MHz to 500 MHz IF Gain Block ADL5531 FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at
QPB3311SR. 15 db Return Path Amplifier MHz. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is an HBT single ended RF amplifier IC operating as return path amplifier capable of supporting DOCSIS 3.1 applications. This IC is designed to provide a low noise, high gain option
Features. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
HMC639ST89 / 639ST89E
Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications,
GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E
9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:
TQP DC-6 GHz Gain Block
Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram
Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324
Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:.
Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
![Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]](/thumbs/88/115381636.jpg "Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]")
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
QPA9801SR MHz 1/4W Balanced Amplifier. General Description. Product Features. Functional Block Diagram Applications. Ordering Information
General Description The is a balanced amplifier module with embedded hybrid couplers to convert to single ended input and output ports. The module has an enable pin to allow for shutting down of the amplifier.
TAT Ω 5V MHz RF Amplifier
TAT74 Datasheet: Rev D 04-17-17-1 of 8 - Disclaimer: Subject to change without notice TAT74 Absolute Maximum Ratings Parameter Rating Storage Temperature - to 1 C Device Voltage (VDD) +10 V Operation of
WJA V Active-Bias InGaP HBT Gain Block
Applications IF Amplifier VHF/UHF Transmission Wireless Infrastructure CATV / SATV / MoCA General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram 50 Ohm Cascadable Gain Block
RF2317. Laser Diode Driver Return Channel Amplifier Base Stations. CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks
CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks Laser Diode Driver Return Channel Amplifier Base Stations The is a general purpose, low cost high linearity RF amplifier IC. The device is
Features. = +25 C, Vcc = 5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Units
v2.717 MMIC AMPLIFIER, 4 - GHz Typical Applications The is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications Functional
2 GHz to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC7950
Data Sheet FEATURES Output power for db compression (PdB): 6 dbm typical Saturated output power (PSAT): 9. dbm typical Gain: db typical Noise figure:. db typical Output third-order intercept (IP3): 6 dbm
SCG002 HIGH LINEARITY BROADBAND AMPLIFIER
SCG2 Features DC to 6 MHz 2 db Gain at 1 MHz 15 dbm Output P1dB at 1 MHz 29 dbm Output IP3 at 1 MHz 3.8 db Noise Figure at 2 MHz Applications Broadband Gain Blocks High Linearity Amplifiers Packages Available
1 GHz 15 db gain wideband amplifier MMIC
SOT89 Rev. 3 25 September 2013 Product data sheet 1. Product profile 1.1 General description The MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV
HMC639ST89 / 639ST89E
v3.1 HMC63ST / 63STE AMPLIFIER,.2-4. GHz Typical Applications The HMC63ST(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Features
20 MHz to 500 MHz IF Gain Block ADL5531
Data Sheet FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at 190 MHz Output 1 db compression:
AH1. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (4) Absolute Maximum Rating
Product Features 25 4 MHz +41 dbm OIP3 3 db Noise Figure.5 db Gain +22 dbm P1dB Lead-free/Green/RoHS-compliant SOT-8 Package Single +5 V Supply MTTF > 1 years Applications Mobile Infrastructure CATV /
Preliminary Datasheet
Device Features This can be operated at Vd of 3.0V N.F = 0.78 db @ 1850MHz at Demo board 31.5 dbm Output IP3 at 0dBm/tone at 1850MHz 15.6 db Gain at 1850MHz 17.7 dbm P1dB at 1850 MHz Lead-free/Green/RoHS
Dual Matched MMIC Amplifier
Surface Mount Dual Matched MMIC Amplifier 50Ω DC to 5.2 GHz The Big Deal Gain, 14.1 db typ. at 2 GHz Dual matched amplifier for push-pull & balanced amplifiers High dynamic range CASE STYLE: JV2579 Product
HMC589ST89 / 589ST89E. Features OBSOLETE. DC GHz GHz GHz. db Gain 22
v.71 HMC59ST9 / 59ST9E Typical Applications The HMC59ST9 / HMC59ST9E is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
SKY LF: 40 MHz to 1 GHz Broadband 75 Ω CATV Low-Noise Amplifier with Bypass Mode
DATA SHEET SKY65450-92LF: 40 MHz to 1 GHz Broadband 75 Ω CATV Low-Noise Amplifier with Bypass Mode Applications Terrestrial and cable set-top box Cable modem Home gateway Personal video recorder (PVR)
SBB-1089 SBB-1089Z MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier
Product Description Sirenza Microdevices SBB89 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current
Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX
High Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal High Gain Broadband High Dynamic Range without external Matching Components May be used as a replacement to RFMD SBB5089Z a,b SOT-89
400 MHz 4000 MHz Low Noise Amplifier ADL5521
FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 db at 900 MHz Including external input match Gain of 20.0 db at 900 MHz OIP3 of 37.7 dbm at 900 MHz P1dB of 22.0 dbm at 900 MHz Integrated
Monolithic Amplifier LEE2-6+ Surface Mount. DC to 7 GHz. The Big Deal
Surface Mount Monolithic Amplifier 50Ω DC to 7 GHz The Big Deal Low Noise figure, 2.3 db at 2 GHz Low Current, 16 ma Broadband matched CASE STYLE: MC1630-1 Product Overview (RoHS compliant) is wideband
ADA1200: Linear Amplifier
DATA SHEET ADA1200: Linear Amplifier Applications Low-noise amplifier for CATV set-top boxes CATV drop amplifier Features 12 db gain 50 to 1000 MHz frequency range Noise figure: 2.3 db Single +5 V supply
MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
Features. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
DC to 1000 MHz IF Gain Block ADL5530
DC to MHz IF Gain Block ADL3 FEATURES Fixed gain of 6. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power
HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias
Monolithic Amplifier MNA-6W+ High Directivity. 0.5 to 5.5 GHz
High Directivity Monolithic Amplifier 50Ω 0.5 to 5.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview
Features. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units
v2.917 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multipoint Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram High Output IP3: +28 dbm Single
LOW NOISE AMPLIFIER GaAs MMIC. -4.0dBm
LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG7HB6 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP operated by single low positive
CGB-1089Z. 50MHz to 1000MHz SINGLE ENDED InGaP/GaAs HBT MMIC CATV AMPLIFIER. Features. Product Description. Applications
50Mhz to 1000MHz Single Ended InGaP/GaAs HBT MMIC CATV Amplifier CGB-1089Z 50MHz to 1000MHz SINGLE ENDED InGaP/GaAs HBT MMIC CATV AMPLIFIER Product Description RFMD s CGB-1089Z is a high performance InGaP
Typical Performance 1. Absolute Maximum Ratings
Device Features +5V/215mA at operating bias condition Gain = 16.0 db @ 2400MHz P1dB = 29.5 dbm @ 2400MHz OIP3 = 42.1dBm 16dBm/tone at 2400MHz LTE 20M ACLR = 19.1dBm Output Power at -50dBc @ 2400MHz Lead-free/Green/RoHS-compliant
Monolithic Amplifier MNA-2A+ High Directivity. 0.5 to 2.5 GHz
High Directivity Monolithic Amplifier 50Ω 0.5 to 2.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview
Gain Control Range db
v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control
MAAM Optical Node RF Amplifier MHz Rev. V3. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2
1 Features -8 dbm to +2 dbm Optical Input Range Low Equivalent Input Noise (EIN): 3.2 pa/rthz Single + V Bias 29 db Gain at MHz; 34 db Gain at 1000 MHz 27 db Gain Control Range +24 dbmv/ch Output at 0
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.414 Typical Applications The HMC5846LS6
RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
MAAM CATV 75 Ω Push Pull Amplifier MHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration 3
Features 25 db Gain 12 Volts DC Bias Differential Inputs and Outputs Low Distortion Adjustable Bias Current and Gain Control Lead-Free 5 x 7 mm 40-Lead PQFN Package Halogen-Free Green Mold Compound RoHS*
SBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier
Product Description Sirenza Microdevices SBB-89Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
Features. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm
v1.314 Typical Applications Features The is ideal for: Test Instrumentation Microwave Radio & VSAT Telecom Infrastructure Military & Space Fiber optics Functional Diagram P1dB Output Power: +27 dbm Psat
SKY LF: MHz Low-Noise, Low-Current Amplifier
DATA SHEET SKY67013-396LF: 600-1500 MHz Low-Noise, Low-Current Amplifier Applications ISM band receivers General purpose LNAs Features Low NF: 0.85 db @ 900 MHz Gain: 14 db @ 900 MHz Flexible supply voltage
SGA-6489 SGA-6489Z Pb
Product Description The SGA-689 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring micron emitters provides high F T and excellent thermal perfomance. The heterojunction
Features. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
MMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
ABA GHz Balanced Low Noise Linear Amplifier ADVANCED PRODUCT INFORMATION - Rev 0.0
1.2 GHz Balanced Low Noise Linear Amplifier FEATURES 15 db Gain +5 V or +8 V Nominal Supply Voltage High Linearity Low Noise Figure: 2.7 db (typ.) Characterized at +25 dbmv output power Wide Band operation
HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz
v1.65 Typical Applications The HMC471MSG / HMC471MSGE is a dual RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features NF = 0.95 db @ 900MHz at RF connectors of Demo board Gain = 20.5 db @ 900 MHz OIP3 = 30.0 dbm @ 1900MHz Output P1 db = 17.5 dbm @ 900MHz 5V/27mA, MTTF > 100 Years, MSL 1, Class 0 Lead-free/RoHS-compliant
Features. Specifications
MGA-30489 0.25W Driver Amplifier Data Sheet Description Avago Technologies s MGA-30489 is a 0.25W highly dynamic range Driver Amplifier MMIC, housed in a SOT-89 standard plastic package. The device features
Product Description VG111-F
Gain Ctrl Product Features 1.7 2.7 GHz bandwidth 26.6 db Attenuation Range +39.5 dbm Output IP3 +22 dbm P1dB Constant IP3 & P1dB over attenuation range Single voltage supply Pb-free 6mm 2-pin QFN package
Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX
Ultra Linear Low Noise Monolithic Amplifier 50Ω 0.05 to 4 GHz The Big Deal Ultra High IP3 Broadband High Dynamic Range May be used as a replacement for RFMD SPF-5189Z a,b SOT-89 PACKAGE Product Overview
QPA9120SR. High Gain High Linearity Driver Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a wideband, high gain, and high linearity driver amplifier in a low-cost, RoHS compliant 3x3 mm QFN package. With Qorvo s E-pHEMT process, this amplifier delivers exceptional performance
Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features
Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
![Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V](/thumbs/90/101370216.jpg "Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V")
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
TGA2602-SM MHz High IP3 Dual phemt. Key Features and Performance. Measured Performance. Primary Applications. Product Description
800-3000 MHz High IP3 Dual phemt Key Features and Performance 800-3000 MHz Frequency Range
ADA GHz CATV Amplifier Data Sheet - Rev 2.6
1 GHz CATV Amplifier FEATURES 15 db Gain Wide Bandwidth: 50 MHz to 1 GHz High Linearity : +15 dbm IIP3 (+8 V supply) Low Distortion Low Noise Figure: 2.0 db Single +4 V to +9 V Supply SOIC-16 and SOT-89
Features = +5V. = +25 C, Vdd 1. = Vdd 2
v1.11 HMC51LP3 / 51LP3E POWER AMPLIFIER, 5-1 GHz Typical Applications The HMC51LP3(E) is ideal for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO Driver for HMC Mixers
TQP3M9008 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 5-4 MHz 2 db Gain @ 1.9 GHz +35.5 dbm Output
100 MHz to 4000 MHz RF/IF Digitally Controlled VGA ADL5240
1 MHz to 4 MHz RF/IF Digitally Controlled VGA ADL524 FEATURES Operating frequency from 1 MHz to 4 MHz Digitally controlled VGA with serial and parallel interfaces 6-bit,.5 db digital step attenuator 31.5