50 ~ 1200 MHz Gain Adjustable Trans-impedance Amplifier MMIC

Transcription

1 ASA6B Data Sheet 5 ~ MHz Gain Adjustable Trans-impedance Amplifier MMIC. Product Overview. General Description ASA6B, a trans-impedance amplifier (TIA) with voltage controlled attenuator, has a high linearity and low noise over a wide range of frequency up to MHz, being suitable for use in the FTTH, optical receiver, distribution amplifiers, and drop-in amplifiers of CATV systems. The amplifier is available in a QFN4 plastic encapsulated package and passes through the stringent DC, RF, and reliability tests.. Features Operating Frequency at 5 ~ MHz Optical Input from -7 dbm to + dbm EIN:. pa/rthz Trans-impedance Gain Adjustable from 8 db to 8 Vctrl =. ~ 4. V (adjustable) Gain Flatness: ±. db over Vctrl =. ~ 4. V and 5 ~ MHz Output Power: 86 db NTSC 79 channels Single +5 V, 9 ma. Applications FTTH Optical Receiver Distribution Amplifier Drop-in Amplifier.4 Package Profile & RoHS Compliance QFN4, 4x4 mm, surface mount RoHS-compliant /9 ASB Inc. sales@asb.co.kr August 8

2 . Summary on Product Performances. Typical Performance Supply voltage = +5 V, TA = +5 C, ZO = 75 Parameters Test Conditions Min Typ Max Units Frequency 5 MHz Gain (W/O Atten) 54.5 MHz, Vctrl =. V 8 db Gain Adjustable Range 54.5 MHz, over Vctrl =. ~ 4. V ) 7 7 db Gain Flatness 5 ~ MHz, over Vctrl =. ~ 4. V. db Output Return Loss 5 ~ MHz, over Vctrl =. ~ 4. V -5 db EIN 5 ~ MHz, Vctrl =. V. pa/rthz CN 54.5 MHz, Optical input -5 dbm 48 dbc CSO ) 57 dbc CTB ) 5 dbc XMOD ) 55 dbc Current Consumption Vdevice = +5 V 9 ma ) Vctrl can be adjusted by R, R, and R in the application circuit. ) OMI =.5 %, for Pout = 86 db V, 54.5 MHz of NTSC 79 channels in the optical input range of -7 ~ + dbm.. Product Specification Supply voltage = +5 V, TA = +5 C, ZO = 75 Parameter Min Typ Max Unit Frequency 54.5 MHz Gain db Output Return Loss -5 db Current Consumption 9 ma. Application Block Diagram Attenuation Control Voltage (VCtrl) Matching Circuit TIA Voltage Controlled Attenuator Amp. Matching Circuit : ASA6B Vdevice /9 ASB Inc. sales@asb.co.kr August 8

3 .4 Absolute Maximum Ratings, TA = +5 C Parameters Operation Case Temperature Storage Temperature Device Voltage Junction Temperature Input RF Power (CW, 75 matched)* Maximum Current Max. Ratings -4 to 85 C -4 to 5 C +8 V +5 C +6 dbm 5 ma The operation of this device in excess of any of these limits may cause permanent damage. * Refer to the max. input RF power data at The max. input RF power, in principle, depends upon application frequency, matching circuit, and device voltage..5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 8 C/W.6 Pin Descriptions TIA Voltage Control Attenuator AMP (NOTE) The left schematic is the top view of QFN4 plastic package with a circled pin mark and a dotted lead & metal exposed paddle on its bottom Pin Pin Name Description Pin Pin Name Description NC No connection 4 AMP OUT B AMP output B TIA IN A TIA input A 5 AMP IADJ AMP B current adjust TIA IADJ TIA A current adjust 6 AMP IADJ AMP A current adjust 4 TIA IADJ TIA B current adjust 7 AMP OUT A AMP output A 5 TIA IN B TIA input B 8 NC No connection 6 NC No connection 9 AMP IN A AMP input A 7 TIA OUT B TIA output B VCA OUT A VCA output A 8 VCA IN B VCA input B NC No connection 9 NC No connection NC No connection Vctrl Gain control voltage VCA IN A VCA input A VCA OUT B VCA output B 4 TIA OUT A TIA output A AMP IN B AMP input B 5 Paddle RF & DC Ground NC No connection /9 ASB Inc. sales@asb.co.kr August 8

4 . Application: 5 ~ MHz. Application Circuit & Evaluation Board * Note: C8 must be placed to Pin(Vctrl) as close as possible. PCB Gerber and DXF File can be downloaded. PCB Information Material FR4 Thickness (mm).8 Size (mm) 4 x 8 EB No. EB-QFN4-4X4-B8 4/9 ASB Inc. sales@asb.co.kr August 8

5 Bill of Material, V ctrl =. ~ 4. V ) (adjustable) Symbol Value Size Description Manufacturer ASA6B - MMIC Amplifier ASB C, C, C5, C, C F Decoupling capacitor Murata C9 F 68 Decoupling capacitor Murata C8 F 5 Decoupling capacitor Murata C, C, C, C4 F 68 DC blocking capacitor Murata C4, C6, C8, C9, C6, C8, C, C F 5 DC blocking capacitor Murata C, C, C4, C F 5 Feedback capacitor Murata C5, C7. pf 5 Matching capacitor Murata C7, C9.75 pf 5 Matching capacitor Murata C5 pf 68 Matching capacitor Murata C6.5 pf 68 Matching capacitor Murata C7.5 pf 68 Matching capacitor Murata R, R8 68 Jumper resistor Samsung R, R4 8 5 Current adjust resistor Samsung R, R9 5 Matching resistor Samsung R6, R 5 Matching resistor Samsung R4, R 5 Matching resistor Samsung R5, R6 5 Current adjust resistor Samsung R8, R9 k 5 Detecting resistor Samsung R, R5, R7, R. k 5 Feedback resistor Samsung R7, R Matching resistor Samsung R Matching resistor Samsung R ). k 5 Vctrl adjust resistor Samsung R ), R7 k 5 Vctrl adjust resistor Samsung R ) 75 5 Vctrl adjust resistor Samsung R4 7.8 k 5 Vctrl adjust resistor Samsung R ), R5 ). k 5 Vctrl adjust resistor Murata R6 5 Vctrl adjust resistor Samsung L5, L.7 nh 5 Matching inductor Murata L8 7 nh 68 Matching inductor Murata L, L8 5.6 nh 5 Matching inductor Murata L, L9 9 nh 5 Feedback inductor Murata L4, L 5 nh 5 Feedback inductor Murata L, L 68 nh 68 RF choke inductor Samsung L7, L4 H 6 RF choke inductor Murata L6, L 47 nh 5 Matching inductor Murata L6 nh 68 Matching inductor Murata L5, L7 4.7 nh 68 Matching inductor Murata L9 ), L ), L ), L ) Ferrite Bead 5 RF choke inductor Murata T 4) : SM-64 Transformer balun MACOM ) Vctrl adjusting resistors. ex) For Vctrl =. ~. V, R = 9 R = 4. k and R =.9 k ) NCP5XWERC ) BLM5HD8SN 4) MABACT4 * Note: The same PCB layout as that of the gerber file uploaded and the BOM listed above are highly recommended for designing customer s own circuit board. 5/9 ASB Inc. sales@asb.co.kr August 8

6 . Plots of Performances, V ctrl =. ~ 4. V Gain (db) Vctrl =.65 V Vctrl =.9 V Vctrl =.6 V Vctrl =.8 V Vctrl =.7 V Vctrl =.5 V Vctrl =.4 V Vctrl =.5 V Vctrl =.56 V Vctrl =.6 V Vctrl =.68 V Vctrl =.75 V Vctrl =.8 V Vctrl =.87 V Vctrl =.9 V Vctrl = 4. V Vctrl = 4.6 V Vctrl = 4. V Vctrl = 4. V Gain flatness deviation (db) - - Vctrl =.65 V Vctrl =.9 V Vctrl =.6 V Vctrl =.8 V Vctrl =.7 V Vctrl =.5 V Vctrl =.4 V Vctrl =.5 V Vctrl =.56 V Vctrl =.6 V Vctrl =.68 V Vctrl =.75 V Vctrl =.8 V Vctrl =.87 V Vctrl =.9 V Vctrl = 4. V Vctrl = 4.6 V Vctrl = 4. V Vctrl = 4. V ` S (db) - - ` Vctrl =.65 V Vctrl =.9 V Vctrl =.6 V Vctrl =.8 V Vctrl =.7 V Vctrl =.5 V Vctrl =.4 V Vctrl =.5 V Vctrl =.56 V Vctrl =.6 V Vctrl =.68 V Vctrl =.75 V Vctrl =.8 V CSO (dbc) MHz.5 MHz.5 MHz 54.5 MHz - Vctrl =.87 V Vctrl =.9 V Vctrl = 4. V Vctrl = 4.6 V Vctrl = 4. V Vctrl = 4. V Popt IN (dbm) MHz.5 MHz.5 MHz 54.5 MHz MHz.5 MHz.5 MHz 54.5 MHz CTB (dbc) XMOD (dbc) Popt IN (dbm) Popt IN (dbm) 6/9 ASB Inc. sales@asb.co.kr August 8

7 . Plots of Performances with Temperature Gain Flatness -4 C Gain Flatness 85 C Vctrl =.5 V Vctrl =.7 V Gain flatness deviation (db) - - Vctrl = 4. V Vctrl =.4 V Vctrl =.4 V Vctrl =.4 V Vctrl =.49 V Vctrl =.55 V Vctrl =.6 V Vctrl =.66 V Vctrl =.7 V Vctrl =.76 V Vctrl =.8 V Vctrl =.84 V Vctrl =.89 V Vctrl =.9 V Vctrl =.97 V Vctrl = 4. V Vctrl = 4.7 V Vctrl = 4. V Vctrl = 4.7 V Gain flatness deviation (db) - - Vctrl = 4.5 V Vctrl =.5 V Vctrl =.7 V Vctrl =.84 V Vctrl =.95 V Vctrl =.5 V Vctrl =.4 V Vctrl =. V Vctrl =. V Vctrl =.8 V Vctrl =.45 V Vctrl =.5 V Vctrl =.6 V Vctrl =.69 V Vctrl =.77 V Vctrl =.86 V Vctrl =.95 V Vctrl = 4.4 V Vctrl = 4.4 V Vctrl = 4. V Vctrl = 4.5 V Attenuation (db) C 5 C MHz EIN (pa/rthz) C 5 C 85 C Vctrl (V) Current (ma) 5 5 Gain (db) MHz Temperature ( C) Temperature ( C) 7/9 ASB Inc. sales@asb.co.kr August 8

8 4. Package Outline (QFN4, 4.x4.x.85 mm ) Part No. Lot No. ASA6B Pxxxx Symbols Dimensions (In mm) MIN NOM MAX A A.. A ---.REF --- b.8..8 D D ---.6BSC --- E E ---.6BSC --- e ---.5BSC --- L ccc M Burr Surface Mount Recommendation (In mm) NOTE. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations.. Recommended is that the ground via holes be placed on the bottom of the exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 8/9 ASB Inc. sales@asb.co.kr August 8

9 6. ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class B Voltage Level: 75 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL at 6 C reflow 7. Recommended Soldering Reflow Profile 6 C ~4 sec C Ramp-up ( C/sec) Ramp-down (6 C/sec) 5 C 6~8 sec (End of Datasheet) Copyright 4-8 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 9/9 ASB Inc. sales@asb.co.kr August 8