GND N/C GND RF IN N/C N/C N/C GND
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1 MAAP Features High Gain: 23 db P1dB: dbm P SAT : 33 dbm IM3 Level: -22 P OUT 27 dbm/tone Power Added Efficiency: 24% at P SAT Lead-Free 5 mm AQFN 32-lead Package RoHS* Compliant Description The MAAP is a 2 Watt, 4-stage power amplifier assembled in a lead-free 5 mm 32-lead AQFN plastic package. This power amplifier operates from 27.5 to 31.5 GHz and provides 23 db of linear gain, 2 W saturated output power and 24% efficiency while biased at 6 V. The MAAP can be used as a power amplifier stage or as a driver stage in higher power applications. This device is ideally suited for VSAT and 28 GHz PTP applications. This product is fabricated using a GaAs phemt process which features full passivation for enhanced reliability. Functional Schematic RF IN VD1 VG VG Pin Configuration 3 VD2 Pin No. Function Pin No. Function VD3 VD3 VD VD4 1 Ground 2 Ground RF OUT Ordering Information 1,2 Part Number MAAP TR5 MAAP SMB Package 5 Piece Reel Sample Board 2 No Connection 21 RF Output 3 Ground 22 Ground 4 RF Input 23 No Connection 5-7 No Connection 24, 25 Ground 8, 9 Ground 26 Drain Voltage 4 1 Gate Voltage 27, 28 Drain Voltage 3 11 Gate Voltage 29 Drain Voltage No Connection No Connection 1. Reference Application Note M513 for reel size information. 2. All sample boards include 3 loose parts. 15 Drain Voltage 4 31 Drain Voltage 1 16, 17 Ground 32 Ground 18, 19 No Connection Paddle 4 Ground *Restrictions on Hazardous Substances, European Union Directive 211/65/EU. 3. MACOM recommends connecting all No Connection () pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. 1
2 MAAP Electrical Specifications: Freq. = GHz, T A =, V D = 6 V, Z = 5 Ω Parameter Test Conditions Units Min. Typ. Max. Gain P IN = dbm db P OUT P IN = 15 dbm dbm IM3 Level P OUT = 27 dbm / tone dbc -22 Power Added Efficiency P SAT (P IN = 15 dbm) % 24 Input Return Loss P IN = -2 dbm db 1 Output Return Loss P IN = -2 dbm db 14 Quiescent Current I DQ (see bias conditions, page 4 ) ma 9 Current P SAT (P IN = 15 dbm) ma 145 Maximum Operating Ratings Absolute Maximum Ratings 7,8 Parameter Rating Parameter Absolute Maximum Input Power 15 dbm Input Power 2 dbm Junction Temperature 5,6 +16 C Drain Voltage + Operating Temperature -4 C to Gate Voltage -3 to V 5. Operating at nominal conditions with junction temperature +16 C will ensure MTTF > 1 x 1 6 hours. 6. Junction Temperature (T J ) = T C + Ө JC * ((V * I) - (P out - P IN )) Typical thermal resistance (Ө JC ) = 8 C/W. a) For T C =, T J = V, 1.45 A, P OUT = 33. dbm, P IN = 15 dbm b) For T C =, T J = V, 1.34 A, P OUT = 32.4 dbm, P IN = 15 dbm Handling Procedures Please observe the following precautions to avoid damage: Junction Temperature 9 Storage Temperature +175 C -65 C to +125 C 7. Exceeding any one or combination of these limits may cause permanent damage to this device. 8. MACOM does not recommend sustained operation near these survivability limits. 9. Junction temperature directly effects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime. Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices. 2
3 MAAP Sample Board Layout C11 Vd1 Vd2 C12 C7 L1 L2 C3 L3 R1 C1 C2 R2 R3 C4 R4 C8 RF IN RF OUT MAAP C5 C6 R6 C1 R5 Vg C9 Vd2 C13 Application Schematic Vd1 Vd2 Parts List Part Value Case Style C11 C7 L1 L2 L3 C8 C12 C1 - C6.1 µf 42 Note: Vd2 must be biased from both sides. R1 C1 R2 C2 R3 C3 R4 C4 C7 - C1 1 µf 63 C11 - C13 1 µf 85 Vd1 Vd2 Vd3 Vd4 R1 - R6 1 Ω 42 RF IN RF O L1 - L MHz 63 Vg Vd4 1. L1 - L3 (chip ferrite bead) supplied from Murata, part number BLM18HE61SN1D. R5 C5 R6 C6 Sample Board Material Specifications C9 C1 C13 Top Layer: 1/2 oz Copper Cladding,.17 mm thickness Dielectric Layer: Rogers RO43C.23 mm thickness Bottom Layer: 1/2 oz Copper Cladding,.17 mm thickness Finished overall thickness:.238 mm Vg Vd2 3
4 MAAP Recommended PCB Layout Detail: RF input and output pre-matching circuit patterns are designed to compensate packaging effects. Transmission line dimensions apply to a PCB with.23 mm thick Rogers RO43C laminate dielectric. Performance curves shown in this data sheet were measured with these circuit patterns Plated Through Hole D= All units are in microns Underneath of the package must be Copper filled plated through holes. D =.2 mm and Space =.43 mm Total Via-holes = 8 x 8 Biasing Conditions Recommended biasing conditions are V D = 6 V, I DQ = 9 ma (controlled with V G ). The drain bias voltage range is 3 to 6 V, and the quiescent drain current biasing range is 6 to 12 ma. V G pins 1 and 11 are connected internally; choose either pin for layout convenience. Muting can be accomplished by setting the V G to the pinched off voltage (V G = -2 V). V D bias must be applied to V D 1, V D 2, V D 3, and V D 4 pins. V D 3 pins 27 and 28 are connected internally: choose either pin for layout convenience. Two V D 4 pins 15 and 26 (not connected internally) are required for current symmetry. Operating the MAAP Turn-on 1. Apply V G (-1.5 V). 2. Apply V D (6. V typical). 3. Set I DQ by adjusting V G more positive (typically -.9 to -1. V for I DQ = 9 ma). 4. Apply RF IN signal. Turn-off 1. Remove RF IN signal. 2. Decrease V G to -1.5 V. 3. Decrease V D to V.
5 S22 (db) S22 (db) S11 (db) S11 (db) Gain (db) Gain (db) MAAP Typical Performance Curves Gain vs. Frequency over Temperature Gain vs. Frequency over Bias Voltage C 1 6. V Input Return Loss vs. Frequency over Temperature Input Return Loss vs. Frequency over Bias Voltage -4 C 6. V Output Return Loss vs. Frequency over Temperature - Output Return Loss vs. Frequency over Bias Voltage -4 C 6. V
6 OIP3 (dbm) IM3 (dbc) P1dB (dbm) MAAP Typical Performance Curves over Temperature P1dB Output Power vs. Frequency 36 P SAT Output Power vs. Frequency C PSAT (dbm) C 26 OIP3 vs. Frequency (P OUT = 27 dbm/tone) IM3 vs. Frequency (P OUT = 27 dbm/tone) C C
7 OIP3 (dbm) IM3 (dbc) P1dB (dbm) MAAP Typical Performance Curves over Bias Voltage P1dB Output Power vs. Frequency 36 P SAT Output Power vs. Frequency V PSAT (dbm) V 26 OIP3 vs. Frequency (P OUT = 27 dbm/tone) IM3 vs. Frequency (P OUT = 27 dbm/tone) V V
8 PAE (%) IM3 (dbc) OIP3 (dbm) MAAP Typical Performance Curves over Frequency P OUT vs. P IN OIP3 vs. P OUT (dbm/tone) GHz 28. GHz 28.5 GHz 29. GHz 29.5 GHz. GHz.5 GHz 31. GHz 31.5 GHz POUT (dbm) GHz 28. GHz 28.5 GHz 29. GHz 29.5 GHz. GHz.5 GHz 31. GHz 31.5 GHz Input Power (dbm) PAE vs. P IN Output Power / Tone (dbm) IM3 Level vs. P OUT (dbm/tone) GHz 28. GHz 28.5 GHz 29. GHz 29.5 GHz. GHz.5 GHz 31. GHz 31.5 GHz GHz 28. GHz 28.5 GHz 29. GHz 29.5 GHz. GHz.5 GHz 31. GHz 31.5 GHz Input Power (dbm) Output Power / Tone (dbm) I DS vs. P IN 25 IDS (ma) GHz 28. GHz 28.5 GHz 29. GHz 29.5 GHz. GHz.5 GHz 31. GHz 31.5 GHz Input Power (dbm)
9 MAAP Lead-Free 5 mm AQFN 32-Lead All Dimensions shown as inches [mm] Reference Application Note S283 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 3 requirements. Plating is NiPdAu. 9
10 MAAP M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 1
MAAM Driver Amplifier GHz Rev. V3. Functional Schematic. Features. Description. Pin Configuration 3,4. Ordering Information 1,2
MAAM-11139 7. - 33. GHz Rev. V3 Features 3 Stage for 8/ GHz Bands 1 db Gain dbm Output Third Order Intercept (OIP3) dbm Output P1dB Variable Gain with Adjustable Bias Lead-Free mm Lead PQFN Package RoHS*
MAAP STD Power Amplifier, 2 W GHz Rev. V2 Features Functional Schematic Description Pin Configuration2 Ordering Information1
Features 24 db Small Signal Gain 41 dbm Third Order Intercept Point (OIP3) >2 W Output P1dB 35 dbm Saturated Output Power Integrated Power Detector Bias 1330 ma @ 6 V Lead-Free 7 mm Cavity Package RoHS*
MAAP Preliminary Information. Power Amplifier GHz. Preliminary - Rev. V2P. Features. Functional Schematic.
MAAP-11199 8-1 GHz Features Saturated Output Power: 24 dbm Gain: 12 db Input Return Loss: >1 db Output Return Loss: >1 db Reverse Isolation: >3 db Dimension: 18 x 2 µm 2 RoHS* Compliant Bare Die Functional
MAAL DIESMB. Low Noise Amplifier DC - 28 GHz. Features. Functional Schematic 1. Description. Pin Configuration 2. Ordering Information. Rev.
MAAL-11141-DIE Features Ultra Wideband Performance Noise Figure: 1.4 db @ 8 GHz High Gain: 17 db @ 8 GHz Output IP3: 28 dbm @ 8 GHz Bias Voltage: V DD = - V Bias Current: I DSQ = 6 - ma Ω Matched Input
MASW SPDT High Isolation Terminated Switch GHz Rev. V4. Features. Functional Block Diagram. Description. Pin Configuration 3
Features Positive Voltage Control High Isolation: 62 db @ 1 GHz 65 db @ 2 GHz Low Insertion Loss: 0.65 db @ 1 GHz 0.70 db @ 2 GHz 50 Ω Internal Terminations Fast Settling for Low Gate Lag requirements
MAAM Differential CATV Variable Gain Amplifier MHz Rev. V1. Functional Schematic. Features. Pin Configuration 3,4.
Features 36 db Gain 25 db Attenuation Range 2.5 db Noise Figure -62 dbc ACPR @ 67 dbmv Output -1 channel 256 QAM -60 dbc ACPR @ 59 dbmv/channel -4 channel 256 QAM 6 V, 930 ma Differential Input and Output
Parameter Test Conditions Units Min. Typ. Max. RFC to T X RFC to R X. P IN = +23 dbm, AC 80 MHz / 256 QAM
Features 2.11a,n,ac Applications.9 db T X Insertion Loss 19 db R X Isolation 12 db R X Gain 2.2 db Noise Figure 1 ma Current - db EVM @ 23 dbm Input (2.11ac MHz / 256 QAM) Lead Free 2 mm 12-lead STQFN
MAAL Low Noise Amplifier GHz Rev. V2. Functional Block Diagram. Features. Description. Pin Configuration. Ordering Information 1,2
MAAL. - 1.6 GHz Rev. V2 Features Low Noise Figure Excellent Input Return Loss Single Voltage Bias 3 V Integrated Active Bias Circuit Current Adjustable 2-8 ma with an External Resistor High Linearity,
NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V6P. Features. Functional Schematic.
Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable from V Power Operation 16 db Gain @ 2.5 GHz 56% Drain Efficiency @ 2.5 GHz 100% RF Tested Lead-Free 3 x
MAAM CATV 75 Ω Push Pull Amplifier MHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration 3
Features 25 db Gain 12 Volts DC Bias Differential Inputs and Outputs Low Distortion Adjustable Bias Current and Gain Control Lead-Free 5 x 7 mm 40-Lead PQFN Package Halogen-Free Green Mold Compound RoHS*
XP1080-QU-EV1. Power Amplifier GHz. Functional Schematic. Features. Description. Pin Configuration 1. Ordering Information. Rev.
2 3 4 5 6 7 8 16 15 14 13 12 11 10 Features Linear On-Chip Power Detector Output Power Adjust 25.0 db Small Signal Gain +27.0 dbm P1dB Compression Point +38.0 dbm OIP3 Lead-Free 7 mm 28-lead SMD Package
NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V4P. Features. Functional Schematic.
Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable From 48 V Operation 16 db Gain @ 2.5 GHz 56 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Lead-Free 3x6 mm
MAOC Preliminary Information. Broadband Voltage Controlled Oscillator 6-12 GHz Preliminary - Rev. V3P. Features. Block Diagram.
Features Octave Tuning Bandwidth Phase Noise: -95 dbc/hz @ 100 khz V TUNE Range: 0-23 V Low Current Consumption: 58 ma Excellent Temperature Stability +5 V Bias Supply Lead-Free 4 mm 24-Lead Package RoHS*
XR1015-QH-EV1. Receiver GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2,3. Ordering Information 1
1 11 1 3 1 19 XR115-QH 1-1 GHz Rev. V1 Features Integrated LNA, Mixer and LO Buffer Amplifier.5 db Noise Figure 1. db Conversion Gain Lead-Free mm lead QFN Package 1% RF, DC and NF Testing RoHS* Compliant
MAGX PPR. Preliminary Information. 15 W GaN-Si Transistor in Surface Mount Plastic Package DC GHz. Preliminary - Rev. V2P.
Features GaN on Si Depletion Mode Transistor Technology Unmatched, Common-Source Configuration Ideal for CW and Pulsed Applications Operation up to 50 V, Class AB Lead-Free 3 x 6 mm -lead DFN Package Halogen-Free
RF OUT / N/C RF IN / V G
MAAM-111 MHz - 2 GHz Rev. V2 Features Functional Schematic 12 db Gain Ω Input / Output Match over Gain Range 3 db Gain Control with to -2 V Control +18 dbm Output Power + V, -. V DC, 7 ma Lead-Free 1.
MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
-20 V to -50 V Driver for AlGaAs PIN Diode Switches Rev. V2 C2 1 GND
Features - V to - V Back Bias ma Sinking / Sourcing Current Propagation Delay
MACP Temperature Compensated Directional RMS Power Detector 2-6 GHz Rev. V1 Features Integrated Directional Coupler Low Insertion Loss: 0.15 db
Features Integrated Directional Coupler Low Insertion Loss: 0.15 db @ 4 GHz Min. detectable power: -15 dbm @ 4 GHz Dynamic range: 45 db @ 4 GHz Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm
MACP Temperature Compensated Directional RMS Power Detector GHz Rev. V1 Features Functional Schematic Description Pin Configuration 3
Features Integrated Directional Coupler Low Insertion Loss:.5 db @ Min. detectable power: -15 dbm @ Dynamic range: 45 db @ Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm 6-Lead TDFN Halogen-Free
RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier
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MAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features.
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TGA4533-SM K-Band Power Amplifier
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SMP LF: Surface Mount PIN Diode
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MADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3
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SMP1321 Series: Low Capacitance, Plastic Packaged PIN Diodes
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SKY Preliminary Data Sheet
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MAAM Optical Node RF Amplifier MHz Rev. V3. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2
1 Features -8 dbm to +2 dbm Optical Input Range Low Equivalent Input Noise (EIN): 3.2 pa/rthz Single + V Bias 29 db Gain at MHz; 34 db Gain at 1000 MHz 27 db Gain Control Range +24 dbmv/ch Output at 0
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Features 3 Terminal LPF Broadband Shunt Structure Low Slope Resistance, 7 Ω +3 dbm Peak and CW Power Handling.6 db Shunt Insertion Loss +2 dbm Flat Leakage Power Lead-Free 1. x 1.2 mm 6-lead TDFN Package
Features. = +25 C, Vdd = +10 V, Idd = 350 ma
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DATA SHEET SKY1646-381LF: 2.2 to 2.8 GHz Two-Way, Degrees Power Divider Applications TD-LTE systems Satellite communications 2.4 GHz ISM band PORT1 Features Low insertion loss:.3 db @ 2.5 GHz High isolation:
SKY LF: 20 MHz to 6.0 GHz GaAs SPDT Switch
DATA SHEET SKY13351-378LF: 2 MHz to 6. GHz GaAs SPDT Switch Applications WLAN 82.11 a/b/g/n networks WLAN repeaters INPUT ISM band radios Low power transmit receive systems OUTPUT1 OUTPUT2 Features Positive
MA4E2054 Series. Surface Mount Low Barrier Schottky Diode. Features. Description and Applications. Rev. V9 SOT-23 (287) SOT-143 (1068)
Features Low I R (
TGA2612-SM 6 12 GHz GaN LNA
Product Description Qorvo s is a packaged broadband Low Noise Amplifier fabricated on Qorvo s QGaN 0.um GaN on SiC process. Covering 6, the TGA2612- SM typically provides >23 dm small signal gain, 19 dbm
SKY : 3400 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier
DATA SHEET SKY66313-11: 3400 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier Applications FDD and TDD 4G LTE and 5G systems Supports 3GPP Bands N78, B22, and B42 Driver amplifier
SKY LF: 10 MHz GHz Six-Bit Digital Attenuator with Driver (0.5 db LSB, 31.5 db Range)
DATA SHEET SKY12353-470LF: 10 MHz - 1.0 GHz Six-Bit Digital Attenuator with Driver (0.5 db LSB, 31.5 db Range) Applications Cellular base stations Wireless data transceivers Broadband systems Features
SKY LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated
DATA SHEET SKY13348-374LF:.5 to 6. GHz SPDT Switch, 5 Ω Terminated Applications WiMAX 82.16 WLAN 82.11 a/b/g/n J1 J2 Features 5 Ω terminated RF outputs from.5 to 6. GHz Low insertion loss:.6 @ 2.5 GHz
TGA2567-SM 2 20 GHz LNA Amplifier
Product Description Qorvo s is a LNA Gain Block fabricated on Qorvo s proven.um phemt production process. The operates from 2 to 2 GHz and typically provides 19 dbm of 1dB compressed output power with
SMV LF and SMV LF: Surface Mount, 0402 Hyperabrupt Tuning Varactor Diodes
DATA SHEET SMV1247-040LF and SMV1249-040LF: Surface Mount, 0402 Hyperabrupt Tuning Varactor Diodes Applications Wide bandwidth VCOs Wide voltage range, tuned phase shifters and filters Features High capacitance
SKY LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated
DATA SHEET SKY13348-374LF:.5 to 6. GHz SPDT Switch, 5 Ω Terminated Applications WiMAX 82.16 WLAN 82.11 a/b/g/n J1 J2 Features 5 Ω terminated RF outputs from.5 to 6. GHz Low insertion loss:.6 @ 2.5 GHz
MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C
MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated
QPM GHz Limiter/Low-Noise Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
QPM1 Product Description The Qorvo QPM1 is an integrated limiter/lna providing robust, high performance over the 2 2GHz frequency range. The QPM1 delivers 17 db small signal gain with gain control and
SMS : 0201 Surface Mount Low Barrier Silicon Schottky Diode Anti-Parallel Pair
PRELIMINARY DATA SHEET SMS7621-092: 0201 Surface Mount Low Barrier Silicon Schottky Diode Anti-Parallel Pair Applications Sub-harmonic mixer circuits Frequency multiplication Features Low barrier height
RFX8053: CMOS 5 GHz WLAN ac RFeIC with PA, LNA, and SPDT
DATA SHEET RFX8053: CMOS 5 GHz WLAN 802.11ac RFeIC with PA, LNA, and SPDT Applications 802.11a/n/ac WiFi devices Smartphones Tablets/MIDs Gaming Consumer electronics Notebooks/netbooks/ultrabooks Mobile/portable
SKY65401: GHz Balanced Low Noise Amplifier Module
PRELIMINARY DATA SHEET SKY65401: 0.7-1.0 GHz Balanced Low Noise Amplifier Module Applications GSM (U.S. cellular and EGSM900) CDMA (U.S. cellular) WCDMA (bands V, VI, and VIII) RF IN VDD1 Features 0.7
SKY : 2.4 GHz Transmit/Receive Front-End Module with Integrated LNA
DATA SHEET SKY65336-11: 2.4 GHz Transmit/Receive Front-End Module with Integrated LNA Applications 2.4 GHz ISM band radios ZigBee FEMs IEEE 802.15.4 applications Features Transmit output power > +20 dbm
TGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
SKY : 5 GHz Low-Noise Amplifier
DATA SHEET SKY6544-31: 5 GHz Low-Noise Amplifier Applications V_ENABLE VCC 82.11a/n/ac radios 5 GHz ISM radios Smartphones Bias Notebooks, netbooks, and tablets Access points, routers, and gateways RF_IN
SKY : 2.4 GHz Transmit/Receive Front-End Module
DATA SHEET SKY65337-11: 2.4 GHz Transmit/Receive Front-End Module Applications 2.4 GHz ISM band radios ZigBee FEMs IEEE 802.15.4 applications Features Transmit output power > +20 dbm Bidirectional path
SKY LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated
DATA SHEET SKY13370-374LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated Applications WiMAX 802.16 Dual-band WLANs (802.11 a/b/g/n) LTE/4G systems Features RF1 50 Ω 50 Ω RF2 50 Ω matched RF ports in all
SKY LF: GHz SP3T Switch, 50 Ω Terminated
DATA SHEET SKY13408-465LF: 1.0 6.0 GHz SP3T Switch, 50 Ω Terminated Applications WiMAX 802.16 Dual-band WLANs (802.11 a/b/g/n) LTE/4G systems WLAN 802.11a/c 5 GHz video distribution Features 50 Ω matched
PIN Diode Chips Supplied on Film Frame
DATA SHEET PIN Diode Chips Supplied on Film Frame Applications Switches Attenuators Features Preferred device for module applications PIN diodes supplied are 00% tested, saw cut, and mounted on film frame
SKY LF: GHz GaAs SPDT Switch
DATA SHEET SKY13321-36LF:.1-3. GHz GaAs SPDT Switch Applications Higher power applications with excellent linearity performance RFC WiMAX systems J2 J1 Features Positive voltage control ( to 1.8 V) High
SKY : 5 GHz Low-Noise Amplifier
DATA SHEET SKY6544-31: 5 GHz Low-Noise Amplifier Applications _ENABLE CC 82.11a/n/ac radios 5 GHz ISM radios Smartphones Bias Notebooks, netbooks, and tablets Access points, routers, and gateways RF_IN
SKY : 2.4 GHz Transmit/Receive Front-End Module with Integrated Low-Noise Amplifier
DATA SHEET SKY65344-21: 2.4 GHz Transmit/Receive Front-End Module with Integrated Low-Noise Amplifier Applications 2.4 GHz ISM band radios ZigBee FEMs IEEE 802.15.4 applications Features Transmit output
SKY LF: 20 MHz-5 GHz, 7 W SPDT Switch
DATA SHEET SKY13299-321LF: 2 MHz-5 GHz, 7 W SPDT Switch Applications RFC WiMAX and WLAN systems Features VCTL1 J1 VCTL2 J2 Positive voltage operation: /3 to /5 V Low insertion loss:.5 typical @ 3.5 GHz
SKY : MHz High Linearity 2 W Power Amplifier
DATA SHEET SKY65126-21: 800-900 MHz High Linearity 2 W Power Amplifier Applications WCDMA/CDMA/TDMA/GSM/LTE Repeaters WLL and ISM band transmitters Mobile radios Femto cell base stations Features High
TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block
TGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
AS183-92/AS183-92LF: 300 khz-2.5 GHz phemt GaAs SPDT Switch
DATA SHEET AS183-92/AS183-92LF: 300 khz-2.5 GHz phemt GaAs SPDT Switch Applications General purpose medium-power switches in telecommunication applications Transmit/receive switches in 802.11 b/g WLAN
SKY LF: 400 to 3800 MHz Linear Power Amplifier
DATA SHEET SKY652-70LF: 400 to 3800 MHz Linear Power Amplifier Applications UHF television TETRA radios PCS, DCS, 2.5G, 3G, 4G handsets and infrastructure systems ISM band transmitters WCS fixed wireless
SKYA21012: 20 MHz to 6.0 GHz GaAs SPDT Switch
DATA SHEET SKYA2112: 2 MHz to 6. GHz GaAs SPDT Switch Automotive Applications Infotainment Automated toll systems Garage door opener 82.11 b/g/n WLAN, Bluetooth systems Wireless control systems Outdoor
AS LF: PHEMT GaAs IC 1 W Low-Loss 0.1 to 6 GHz SPDT Switch
DATA SHEET AS225-313LF: PHEMT GaAs IC 1 W Low-Loss 0.1 to 6 GHz SPDT Switch Applications INPUT WLAN 802.11a/b/g Features OUTPUT1 OUTPUT2 Positive low voltage control (0/3 V) Low insertion loss (0.6, 0.1
SMP1322 Series: Low Resistance, Plastic Packaged PIN Diodes
DATA SHEET SMP1322 Series: Low Resistance, Plastic Packaged PIN Diodes Applications High-performance wireless switch applications Features Resistance: 0.8 Ω typical @ 1 ma Packages rated MSL1, 260 C per