MAAM Optical Node RF Amplifier MHz Rev. V3. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2
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1 1 Features -8 dbm to +2 dbm Optical Input Range Low Equivalent Input Noise (EIN): 3.2 pa/rthz Single + V Bias 29 db Gain at MHz; 34 db Gain at 1000 MHz 27 db Gain Control Range +24 dbmv/ch Output at 0 MHz Lead-Free 4 mm PQFN-24LD Plastic Package Halogen-Free Green Mold Compound RoHS* Compliant and 260 C Reflow Compatible Description The provides high gain, low noise and low distortion amplification for optical node applications. The is fabricated using M/A-COM Technology Solutions low noise GaAs phemt technology in a lead-free 4 mm 24-lead package. The amplifier requires a minimal number of off-chip components resulting in a highly integrated low cost solution. Ordering Information 1,2 Part Number -TR1000 -TR SMB 1. Reference Application Note M13 for reel size information. 2. All sample boards include loose parts. Sample board is supplied with mounted photodiode. * Restrictions on Hazardous Substances, European Union Directive 2002/9/EC. Package 1000 Piece Reel 3000 Piece Reel Sample Test Board Functional Schematic N/C RF IN A RF IN B N/C 8 9 Pin Configuration I ADJ A 24 I ADJ B V DD 1A TILTA RFBA 17 RF OUT A 14 RF OUT B 13 RFBB Pin No. Pin Name Description 1 N/C No Connection 2 RF IN A RF Input A 3 N/C No Connection 4 N/C No Connection RF IN B RF Input B 6 N/C No Connection 7 I ADJ B Current Adjust 8 V DD 1B + V Bias Voltage 9 TiltB Tilt Connection 10 V AGC AGC Control Voltage: 0V to 3V 11 N/C No Connection 12 InterB Interstage Pin 13 R FB B Feedback Resistor 14 RF OUT B RF Output B 1 I ADJ 2B Current Adjust 16 I ADJ 2A Current Adjust 17 RF OUT A RF Output A 18 R FB A Feedback Resistor 19 InterA Interstage Pin 20 N/C No Connection 21 V DD_AGC + V AGC Bias Voltage 22 TiltA Tilt Connection 23 V DD 1A + V Bias Voltage 24 I ADJ A Current Adjust 2 Paddle RF & DC Ground 3. The exposed pad centered on the package bottom must be connected to RF and DC ground. V DD_AGC N/C 3 16 I ADJ 2A VVA N/C 4 1 I ADJ 2B 7 V DD 1B TILTB V AGC N/C N/C Inter A InterB Europe Tel: / Fax:
2 Electrical Specifications 4 : V DD = + Volts, T A = 2 C, Z 0 = 7 Ω Parameter Test Conditions Units Min. Typ. Max. Trans-Impedance Gain,6 Gain Tilt 7 0 MHz 870 MHZ 1 GHz V AGC = +3 V V AGC = 0 V 4. Performance is specified using JDSU Photodiode EPM-74 or equivalent (EPM70) and output balun # MABA CT Gain = 20*log(Z T /7), where Z T = Transconductance (Ω) 6. Specified at maximum gain (V AGC = +3.0 V) 7. Positive gain slope from 0 MHz to 1 GHz (tilt of best fit straight line from 0 MHz to 1 GHz) 8. Flatness defined as peak-peak deviation from best fit straight line. 9. Optical Input Power Range: -8 dbm to +2 dbm; 79 channels OMI = 3.%; Pout = +24 dbmv/ch at 0 MHz P OUT = +22. dbmv/ch at MHz; +24 dbmv/ch at 0 MHz db db - Gain Flatness 8 V AGC : 0 to 3 V db 0.7 Gain Control Range 0 MHz 870 MHZ 1 GHz AGC Control Voltage Range 0 MHz - 1 GHz V EIN 6 0 MHz - 1 GHz pa/rthz Output Return Loss 0 MHz - 1 GHz db CTB 9 79 channels dbc CSO 9 79 channels dbc Current V DD = + V ma db Absolute Maximum Ratings 10,11,12 Parameter Input Power Operating Voltage AGC Voltage Operating Temperature Junction Temperature 13 Storage Temperature Absolute Maximum +3 dbm Optical +1 volts + volts -40 C to +8 C +10 C -6 C to +10 C 10. Exceeding any one or combination of these limits may cause permanent damage to this device. 11. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 12. Operating at nominal conditions with T J +10 C will ensure MTTF > 1 x 10 6 hours. 13. Junction Temperature (T J ) = T C + Өjc * ((V * I) - (P OUT - P IN )) Typical thermal resistance (Өjc) = 19 C/W. a) For T C = 2 C, T J = 3 V, 29 ma b) For T C = 8 C, T J = 112 V, 29 ma Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Europe Tel: / Fax:
3 Recommended PCB Schematic Including Off-Chip Components 3 Europe Tel: / Fax:
4 Parts List Component Value Case Style L1 - L8 14 Ferrite Bead 0402 L9 - L10 12 nh w/w 0402 L nh 0402 L12 33 nh 0402 L13 - L14 10 nh 0402 C1 - C12 10 nf 0402 C13 - C pf 0402 C1 3.0 pf 0402 C16 - C pf 0402 C18 - C µf 0603 R1 - R4 1 kω 0402 R - R7 680 Ω 0402 R8 200 Ω 0402 R9 - R Ω 0402 R11 - R12 39 Ω 0402 R13 82 Ω 0402 R Ω 0402 R1 - R16 12 Ω 0402 R17 - R18 47 Ω 0402 R19 - R20 62 Ω 0402 R Ω 0402 R22 1 kω 0603 R Ω 0402 T1 1 1:1 Balun SM-118A Application Schematic Bulk Optic Gain Control PCB Land Pattern Balun RF Output 14. Ferrite Bead from Murata, part number BLM1HD182SN 1. M/A-COM Technology Solutions MABA CT1760 1:1 T X Line Balun All dimension are in mm 4 Europe Tel: / Fax:
5 Typical Performance Curves: +2 C, VAGC = 0V to 3V in 0.2 V Steps Vagc=0.0V Vagc=0.2V Vagc=0.4V Vagc=0.6V Vagc=0.8V Vagc=1.0V Vagc=1.2V Vagc=1.4V Vagc=1.6V Vagc=1.8V Vagc=2.0V Vagc=2.2V Vagc=2.4V Vagc=2.6V Vagc=2.8V Vagc=3.0V Receiver Gain vs. Frequency to 1.1 GHz Receiver Gain vs. Frequency to 1.6 GHz Output Return Loss vs. Frequency Europe Tel: / Fax:
6 Typical Performance Curves: VAGC = 0V to 3V in 0.2 V Steps Vagc=0.0V Vagc=0.2V Vagc=0.4V Vagc=0.6V Vagc=0.8V Vagc=1.0V Vagc=1.2V Vagc=1.4V Vagc=1.6V Vagc=1.8V Vagc=2.0V Vagc=2.2V Vagc=2.4V Vagc=2.6V Vagc=2.8V Vagc=3.0V Gain Flatness Deviation From Best Fit +2 C Gain Flatness Deviation From Best Fit -40 C Gain Flatness Deviation From Best Fit +8 C Europe Tel: / Fax:
7 Typical Performance Curves Gain Tilt Deviation from Average Tilt VAGC: 0V to 3V in 0.2 V Steps 2.0 Equivalent Input Max Gain VAGC = 3V C -40 C +8 C C -40 C +8 C Control Voltage (V) 0 Receiver Gain vs. VAGC VAGC = 0V to 3V in 0.2V Steps MHZ 00 MHz 870 MHZ 1000 MHz V (V) AGC 3 Europe Tel: / Fax:
8 Typical Performance Curves: 79 Channels; NTSC Frequency Plan Pout = +22. MHz; MHz CTB vs. Optical Input Power Optical Input Power (dbm) CSO_Lower vs. Optical Input Power Optical Input Power (dbm) CSO_Upper vs. Optical Input Power Optical Input Power (dbm) 4 Europe Tel: / Fax:
9 Lead Free 4 mm 24-lead PQFN Reference Application Note 2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is 100% matte tin over copper. Europe Tel: / Fax:
RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
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Features 36 db Gain 25 db Attenuation Range 2.5 db Noise Figure -62 dbc ACPR @ 67 dbmv Output -1 channel 256 QAM -60 dbc ACPR @ 59 dbmv/channel -4 channel 256 QAM 6 V, 930 ma Differential Input and Output
RF OUT / N/C RF IN / V G
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MACP Temperature Compensated Directional RMS Power Detector 2-6 GHz Rev. V1 Features Integrated Directional Coupler Low Insertion Loss: 0.15 db
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![Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]](/thumbs/87/97046026.jpg "Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]")
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![Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V](/thumbs/90/101370216.jpg "Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V")
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Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]
![Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]](/thumbs/85/92877431.jpg "Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]")
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DATA SHEET SKY67107-306LF: 2.3-2.8 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier Applications LTE cellular infrastructure and ISM band systems Ultra low-noise, high gain and high linearity
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.1211 45 Analog Phase Shifter,
TQP3M9035 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems Product Features 2x2mm 8-lead DFN plastic package Functional Block Diagram 5-4 MHz.66 db
30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
HMC1013LP4E. SDLVAs - SMT. SUCCESSIVE DETECTION LOG VIDEO AMPLIFIER (SDLVA), GHz
v.9 HMCLPE AMPLIFIER (SDLVA),.5-8.5 GHz Typical Applications The HMCLPE is ideal for: EW, ELINT & IFM Receivers DF Radar Systems ECM Systems Broadband Test & Measurement Power Measurement & Control Circuits
50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
ADA GHz CATV Amplifier Data Sheet - Rev 2.6
1 GHz CATV Amplifier FEATURES 15 db Gain Wide Bandwidth: 50 MHz to 1 GHz High Linearity : +15 dbm IIP3 (+8 V supply) Low Distortion Low Noise Figure: 2.0 db Single +4 V to +9 V Supply SOIC-16 and SOT-89
RF2317. Laser Diode Driver Return Channel Amplifier Base Stations. CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks
CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks Laser Diode Driver Return Channel Amplifier Base Stations The is a general purpose, low cost high linearity RF amplifier IC. The device is
WJA V Active-Bias InGaP HBT Gain Block
Applications IF Amplifier VHF/UHF Transmission Wireless Infrastructure CATV / SATV / MoCA General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram 50 Ohm Cascadable Gain Block
HMC599ST89 / 599ST89E. Features. The HMC599ST89(E) is ideal for: = +25 C MHz. Gain Variation Over Temperature MHz 0.
HMCST / STE Typical Applications v2.3 GaAs phemt MMIC LNA, Ohm - 1 MHz Features The HMCST(E) is ideal for: High P1 Output Power: +1 m VHF / UHF Antennas HDTV Receivers CMTS Equipment CATV, Cable Modem
Gain Control Range db
v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control
TQP3M9008 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 5-4 MHz 2 db Gain @ 1.9 GHz +35.5 dbm Output
GHz Packaged HPA. GaAs Monolithic Microwave IC in SMD leadless package. Output power (dbm)
Output power (dbm) G Description GaAs Monolithic Microwave IC in SMD leadless package The is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a
HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias
TAT8858A1H CATV Infrastructure Push-Pull Amplifier
TAT8858AH Applications CATV Line Amplifiers CATV System Amplifiers Distribution Nodes Green Applications SOIC-6 Wide Package Product Features Functional Block Diagram 75 Ω, 50-000 MHz Bandwidth GaAs phemt
RFPD2650 GaAs/GaN Power Doubler Hybrid 45MHz to 1003MHz
GaAs/GaN Power Doubler Hybrid 45MHz to 1003MHz The RFPD2650 is a Hybrid Power Doubler amplifier module. The part employs GaAs phemt die and GaN HEMT die, has extremely high output capability, and is operated
Features. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT
v1. Typical Applications The HMC689LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +32 dbm Low Conversion Loss:
Features. = +25 C, Vdd = +5V, Idd = 400mA [1]
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v.61 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Features Saturated Output Power:.5 dbm @ 21% PAE High Output IP3: 34.5 dbm High Gain:.5
50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over
ACA1240: CATV Infrastructure Amplifier 1.2 GHz CCAP/Edge QAM/CMTS Driver
DATA SHEET ACA1240: CATV Infrastructure Amplifier 1.2 GHz CCAP/Edge QAM/CMTS Driver Applications CATV head-end CCAP/EQAM/CMTS modulators MDU output device Features 35 db gain Meets DRFI specification +5
TQP DC-6 GHz Gain Block
Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE CATV Point to Point General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram DC-6000 MHz 15.4 db Gain @ 1.9 GHz 4 3.6
Features OBSOLETE. = +25 C, 50 Ohm System GHz degrees Insertion Loss 6-15 GHz 8 11 db. Return Loss (Input and Output) 6-15 GHz 7 db
v2.29 6 ANALOG PHASE SHIFTER, 1 Typical Applications The HMC538LP4 / HMC538LP4E is ideal for: Fiber Optics Military Test Equipment Functional Diagram Features Electrical Specifications, T A = +25 C, 5
Monolithic Amplifier TSY-13LNB+ Wideband. 50Ω 0.03 to 1 GHz. The Big Deal
Wideband Monolithic Amplifier 50Ω 0.03 to 1 GHz The Big Deal Very wideband, 30 MHz 1 GHz Low NF over entire frequency band, 1.2 db Low current and low voltage (2.7V and 7.7 ma) Internal bypass switching
HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications
v2.1 Typical Applications The HMC694LP4(E) is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment Features Wide Gain Control Range: 23 db Single Control Voltage
Product Description VG111-F
Gain Ctrl Product Features 1.7 2.7 GHz bandwidth 26.6 db Attenuation Range +39.5 dbm Output IP3 +22 dbm P1dB Constant IP3 & P1dB over attenuation range Single voltage supply Pb-free 6mm 2-pin QFN package
Features db
v1.19 DETECTOR / CONTROLLER, 5-8 MHz Power Detectors - SMT Typical Applications The is ideal for: Cellular Infrastructure WiMAX, WiBro & LTE/G Power Monitoring & Control Circuitry Receiver Signal Strength
HMC639ST89 / 639ST89E
v3.1 HMC63ST / 63STE AMPLIFIER,.2-4. GHz Typical Applications The HMC63ST(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Features
Features. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
400 MHz 4000 MHz Low Noise Amplifier ADL5521
FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 db at 900 MHz Including external input match Gain of 20.0 db at 900 MHz OIP3 of 37.7 dbm at 900 MHz P1dB of 22.0 dbm at 900 MHz Integrated
0.5-20GHz Driver. GaAs Monolithic Microwave IC
Gain, NF / P1dB, Pout WWG A3667A A3688A UMS 667A 688A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide
TQP3M9018 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 6 Pin x mm QFN Package Product Features Functional Block Diagram -4 MHz.5 db Gain at 9 MHz. db Noise Figure
Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature
v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
DC to 1000 MHz IF Gain Block ADL5530
Data Sheet FEATURES Fixed gain of 16. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power supply 3 V or
ACA /870/1000 MHz CATV Push-Pull Line Amplifier Data Sheet - Rev 2.2
750/870/1000 MHz CATV PushPull Line Amplifier Data Sheet Rev 2.2 FEATURES 1 GHz Specified Performance 22 db Gain Very Low Distortion Excellent 75 Ω Input and Output Match Stable with High VSWR Load Conditions