MADR V to 250V Driver for High Power PIN Diode Switches Rev. V1. Functional Schematic. Features. Description. Pin Configuration 1
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- Lilian Thornton
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1 Features 20 V to 250 V Back Bias in Off State 200 ma Series Diode Bias Current at +25 C 50 ma Shunt Diode Bias Current at +25 C Propagation Delay less than 8 µs Low Quiescent Current Consumption 3 V or 5 V CMOS Logic Control 7 mm QFN-16LD Package Tape and Reel Packaging Available RoHS* Compliant and 260 C Reflow Compatible Functional Schematic Description The switch driver is designed to work with M/A-COM Technology Solutions high power and high voltage PIN diodes. This driver consists of two independently controlled drivers which are able to provide 200 ma series / 50 ma shunt current to a series/shunt, series/shunt SPDT PIN diode switch. The back bias voltage is configurable from 20 V to 250 V. High voltage level shifters are integrated so that it can be easily controlled by 3 V or 5 V CMOS logic. While consuming low quiescent current, this driver has a typical delay of less than 8 µs when driving 220 pf capacitor load. If needed, the switching speed can be improved by consuming more quiescent power. This driver is packaged in a lead free 7 mm PQFN- 16LD package and is available in tape and reel packaging for high volume applications. Ordering Information Part Number TR -001SMB Package Bulk Packaging 1000 piece Reel Sample Board with Driver & MA4P T Diodes Pin Configuration 1 Pin No. Pin Name Description 1 SH1 Shunt1 2 C1 Control Logic 1 3 I BIAS Bias Voltage 4 SER1 Series1 5 N/C 2 No Connection 6 GND Ground 7 GND Ground 8 N/C 2 No Connection 9 SH2 Shunt2 10 V CC Control Voltage 11 C2 Control Logic 2 12 SER2 Series2 13 GND Ground 14 N/C 2 No Connection 15 N/C 2 No Connection 16 V DD Drain Voltage 17 Paddle Ground 1. The paddle of the QFN package should be tied to ground. 2. N/C pins (except Pin 15) can be grounded. The clearance from high voltage pins should be at least 0.8 mm. Pin 15 must be left open. 1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
2 Recommended Operating Conditions Parameter Test Conditions Unit Min. Typ. Max. V CC Nominal V CC = 3.3 V Nominal V CC = 5.0 V V DD V Logic 0 Control1, Control2 Logic 1 V V V CC V CC V CC V CC Series1/Series2 Sinking Current 4-40 C +25 C +85 C ma Shunt1/Shunt2 Sinking Current 4-40 C +25 C +85 C ma I BIAS 5,6 +25 C μa Operating Temperature C Unused Controls should be either grounded or connected to V CC. They should never be left open. 4. Refer to Application Circuit: Driving SPDT Switch with MA4P T Pin Diodes for configuration of diode bias currents. 5. This sinking bias current is necessary for normal driver operation. The easiest way is to connect a 0402 resistor R BIAS between Pin V CC and Pin I BIAS. Then I BIAS can be calculated by: I BIAS = (V CC -0.6)/(500+R BIAS ) 6. Refer to graph Typ. Ton Driving 220 pf Caps vs. IBIAS on page 3 and the chart Typ. IDD vs. IBIAS at 25 C on page 4 for the tradeoff between switching speed and power consumption. Absolute Maximum Ratings 7,8 Truth Table 9 2 Parameter Absolute Maximum V CC -0.5 V to +7 V V DD -0.5 V to 275 V C1, C2 (Logic) -0.5 V to 7 V Series1/Series2 Sinking Current -40 C +25 C +85 C Shunt1/Shunt2 Sinking Current -40 C +25 C +85 C Series/Shunt Outputs Sourcing Current I BIAS ESD HBM Rating Operating Temperature Storage Temperature 550 ma 450 ma 350 ma 150 ma 150 ma 100 ma 25 ma 500 μa >1kV -40 to +125 C -55 to +150 C 7. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 8. Exceeding any one or combination of these limits may cause permanent damage to this device. C1 0 1 C2 Series1 Shunt1 Series2 Shunt2 0 Low High Low High 0 1 Low High High Low 1 0 High Low Low High 1 High Low High Low 9. The actual voltage levels for Low and High are dependent on the current load to the driver. They can be estimated from the driver on resistance. Powering On/Off Sequence: V DD should be turned on after V CC, and the rise time of V DD should be slower than 2.5 µs. When powering off, V DD should be turned off before V CC.
3 Electrical Specifications: T A = +25 C, V CC = 3.3 V, V DD = 250 V, I BIAS = 6 μa 10 Parameter Test Conditions Unit Min. Typ. Max. Quiescent Supply Currents V CC (3.3 V) 11 V DD (250 V) μa Control Input Leakage Current μa 1 Series Pull-down FET On Resistance 200 ma Load Ω Shunt Pull-down FET On Resistance 50 ma Load Ω Switching Speed Driving 220pF Caps: Series 12 T ON T OFF Tr Tf 50% CTL to 95% Voltage 50% CTL to 5% Voltage 10% - 90% 90% - 10% μs Switching Speed Driving 220pF Caps: Shunt 12 T ON T OFF Tr Tf 50% CTL to 95% Voltage 50% CTL to 5% Voltage 10% - 90% 90% - 10% μs The parameters were measured with 500 kω R BIAS connecting between pin V CC and pin I BIAS. 11. I BIAS is included in the quiescent V CC current due to the bias configuration. 12. Switching parameters were measured driving 220 pf capacitors with no current load. Controls C1 and C2 were tied together. It will be faster when C2 is inverted from C1, which is case driving a SPDT switch. 3
4 Performance Driving M/A-COM MA4P T PIN Diode SPDT Switch The switch is a series/shunt, series/shunt SPDT switch using four M/A-COM MA4P T PIN diodes. Schematic is on next page. Switching parameters were measured with 500 MHz 20W CW RF signal. 4
5 Application Circuit: Driving SPDT Switch with MA4P T PIN Diodes 14 N/C GND GND N/C TP2 PADDLE VDD N/C N/C GND 14. This is the schematic of MADR SMB. The frequency range for this application circuit is 200 MHz to 500 MHz. The bias current for the series diodes is 200 ma. The bias current for the shunt diodes is 50 ma. The recommended inductors are Coil Craft 0603LS-181XJLB for both current and frequency considerations. For different frequency applications, both capacitors and inductors should be adjusted accordingly. 5
6 Recommended PCB Parts List Footprint Part Value Size C µf, 500 V 0805 C6 - C pf, 500 V 0805 C13 - C µf, 16 V 0402 L1 - L8 180 nh 0603 R1 1.5 Ω, 1 W 2512 R2 15 Ω, 0.5 W 1206 R3 499 KΩ, 1/16 W 0402 D1 - D4 MA4P
7 Lead Free 7mm PQFN-16LD ALL DIMENSIONS SHOWN AS in[mm] This is not a JEDEC standard package. Please refer to Application Note for footprint and lead-free solder reflow recommendations. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Silicon Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 7
8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: MACOM: -TR1000
MADR PIN Diode Driver for Series / Series High Power Switch Rev. 5. Pin Configuration. Features. Description
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Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Description The CMD197C4 is a wideband GaAs MMIC driver amplifier housed in a leadless
Digital Step Attenuator
5W DC-24 MHz 31.5 db,.5 db Step 6 Bit, Parallel Control Interface, Single Positive Supply Voltage, +3V Product Features Single positive supply voltage, +3V Immune to latch up Excellent accuracy,.1 db Typ
OBSOLETE. 9 khz. Operation Frequency 9 khz. db 6000 MHz. db Return Loss RF1, RF2 and RFC
Product Description The PE455 RF Switch is designed to support the requirements of the test equipment and ATE market. This broadband general purpose switch maintains excellent RF performance and linearity
HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias
CMD158P GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.
Features Functional Block Diagram Broadband performance High output power Low current consumption Single supply voltage: +5.0 V @ 95 ma Pb-free RoHs compliant 3x3 QFN package Description The CMD8P3 is
SMP1302 Series: Switch and Attenuator Plastic Packaged PIN Diodes
DATA SHEET SMP1302 Series: Switch and Attenuator Plastic Packaged PIN Diodes Applications TV distribution and cellular base stations High volume switch and attenuators Features Designed for base station
SLG59M1470V. 9.8 mω Nanopower Mobile 6.0 A Load Switch with Discharge. 9-pin FC-TDFN (Top View) General Description. Pin Configuration.
9.8 mω Nanopower Mobile 6.0 A Load witch with Discharge General Description The is a 9.8 mω 6.0 A single-channel load switch that is able to switch 0.95 to 3.3 V power rails. The product is packaged in
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.613 Typical Applications The HMC545A
SKY LF: GaAs SP2T Switch for Ultra Wideband (UWB) 3 8 GHz
DATA SHEET SKY1398-36LF: GaAs SPT Switch for Ultra Wideband (UWB) 3 8 GHz Features Positive voltage control (/1.8 V to /3.3 V) High isolation 5 for BG1, 5 for BG3 Low loss.7 typical for BG1,.9 for BG3
TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block
FSTD Bit Bus Switch with Level Shifting
FSTD16861 20-Bit Bus Switch with Level Shifting General Description The Fairchild Switch FSTD16861 provides 20-bits of highspeed CMOS TTL-compatible bus switching. The low On Resistance of the switch allows
SKY LF: GaAs Digital Attenuator 5-Bit, 1 db LSB 400 MHz 4 GHz
data sheet SKY12329-35LF: GaAs Digital Attenuator 5-Bit, 1 db LSB 4 MHz 4 GHz Applications l Transceiver transmit automatic level control or receive automatic gain control in WiMAX, GSM, CDMA, WCDMA, WLAN,
OBSOLETE. Output Power for 1 db Compression dbm Output Third Order Intercept Point (Two-Tone Output Power= 12 dbm Each Tone)
Designer s Kit Available v.211t Typical Applications The is ideal for: Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors IF & RF Applications Functional Diagram
LTV-M701 Small Outline, 5 Lead Low Input Current, High Gain Optocoulplers
LTV-M701 Small Outline, 5 Lead Low Input Current, High Gain Optocoulplers Description These high gain series couplers use a light emitter diode and an integrated high gain photo detector to provide extremely
SKY LF: GHz 50 W High Power Silicon PIN Diode SPDT Switch
DATA SHEET SKY12207-306LF: 0.9-4.0 GHz 50 W High Power Silicon PIN Diode SPDT Switch Applications Transmit/receive switching and failsafe switching in TD- SCDMA, WiMAX, and LTE base stations Transmit/receive
TQP3M9035 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems Product Features 2x2mm 8-lead DFN plastic package Functional Block Diagram 5-4 MHz.66 db
Digital Step Attenuator
Surface Mount Digital Step Attenuator 50Ω 0 to 31.5, 0.5 Step DC to 4.0 GHz DAT-31R5A+ Series The Big Deal Wideband, operates up to 4 GHz Immune to latchup High IP3, 52 m CASE STYLE: DG983-2 Product Overview
HMC241AQS16 / 241AQS16E
v00.1213 Typical Applications Features The HMC241AQS16 & HMC241AQS16E are ideal for: Base Stations & Portable Wireless CATV / DBS Wireless Local Loop Test Equipment Functional Diagram RoHS Compliant Product
AA104-73/-73LF: 300 khz-2.5 GHz One-Bit Digital Attenuator
DATA SHEET AA104-73/-73LF: 300 khz-2.5 GHz One-Bit Digital Attenuator (32 ) Applications Sixth-bit value for Skyworks AA260-85 and AA101-80 digital attenuators IF and RF components for cable, GSM, PCS,
HMC349LP4C / 349LP4CE
Typical Applications The HMC349LP4C / HMC349LP4CE is ideal for: Basestation Infrastructure MMDS & 3.5 GHz WLL CATV/CMTS Test Instrumentation Functional Diagram Features High Isolation: 67 @ 1 GHz 62 @
CMD157P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.
Features Functional Block Diagram Ultra low noise figure High gain broadband performance Single supply voltage: +3. V @ 52 ma Pb-free RoHs compliant 3x3 QFN package Description The CMD7P3 is a broadband
MAGX L00 MAGX L0S
Features GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260 C Reflow Compatible +50 V Typical Operation