RF OUT / N/C RF IN / V G

Size: px
Start display at page:

Download "RF OUT / N/C RF IN / V G"

Transcription

1 MAAM-111 MHz - 2 GHz Rev. V2 Features Functional Schematic 12 db Gain Ω Input / Output Match over Gain Range 3 db Gain Control with to -2 V Control +18 dbm Output Power + V, -. V DC, 7 ma Lead-Free 1. x 1.2 mm 6-lead TDFN Package RoHS* Compliant and 26 C Reflow Compatible RF OUT / V D N/C N/C N/C Description The MAAM-111 is an easy-to-use, broadband, general purpose variable gain amplifier. Its over 3 db gain range is controlled by a single control pin and Ω match is maintained over all settings. RF IN / V G 3 V C The MAAM-111 operates from MHz to 2 GHz and features flat gain control from +1 db to -2 db. At maximum gain setting (V C =Open) it delivers up to +18 dbm power and under db noise figure. Both reduce proportionally as gain is reduced with V C. The input IP3 exceeds + dbm at max/min gain settings. The device is typically biased with a V D = + V, V G = -. V, and a control of V to -2 V. Typical current is 7 ma with V G at -. V The MAAM-111 is ideally suited for use as a power amplifier driver, gain trimming block, or temperature compensation in the receive or transmit mode. Typical applications include Wi-Fi, LTE. Point-to-Point, IMS, EW, and A&D systems. This device is assembled in a leadless 1. X 1.2 mm package that can be handled and placed with standard pick and place assembly equipment. Pin Configuration Pin No. Pin Name Function 1 RF OUT /V D RF Output 2 N/C No Connection 3 RF IN /V G RF Input V C Voltage Control N/C No Connection 6 N/C No Connection 7 Paddle 3 Ground 3. The exposed paddle centered on the package bottom must be connected to RF and DC ground. Ordering Information 1,2 Part Number MAAM-111 MAAM-111-TR1 MAAM-111-1SMB Package bulk quantity 1 piece reel Sample board 1. Reference Application Note M13 for reel size information. 2. All sample boards include loose parts. * Restrictions on Hazardous Substances, European Union Directive 211/6/EU. 1

2 MAAM-111 MHz - 2 GHz Rev. V2 Electrical Specifications (unless otherwise noted): Freq = 1 GHz, T A = +2 C, V D = + V, V G = -. V, V C = Open, Z IN = Z OUT = Ω Parameter Test Conditions Units Min. Typ. Max. Highest Gain Lowest Gain V C = MHz V C = 1 GHz V C = 2 GHz V C = -2 MHz V C = -2 1 GHz V C = -2 2 GHz db 8 db Gain Control V C = to -2 V db 3 Isolation All States db 28 Input Return Loss All States db 1 Output Return Loss All States db 12 Noise Figure At maximum gain db P1dB At maximum 1 GHz dbm + Input IP3 At maximum or minimum gain dbm + Stability Any Load - unconditional Voltage Supply External Choke V Bias Current V D = + V V G = -. V ma Absolute Maximum Ratings,,6 Parameter Absolute Max. Input Power + dbm Operating Voltage +8 Volts Operating Current 11 ma Junction Temperature 7 + C Operating Temperature - C to +8 C Storage Temperature -6 C to + C Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.. Exceeding any one or combination of these limits may cause permanent damage to this device.. MACOM does not recommend sustained operation near these survivability limits. 6. Operating at nominal conditions with T J C will ensure MTTF > 1 x 1 6 hours. 7. Junction Temperature (T J ) = T C + Ө JC * ((V * I) - (P OUT - P IN )) Typical thermal resistance (Ө JC ) = 67 C/W a) For T C = 2 C, T J = 7 V, 7 ma, P OUT = dbm, P IN = 6 dbm b) For T C = 8 C, T J = 17 V, 7 ma, P OUT = dbm, P IN = 6 dbm 2

3 MAAM-111 MHz - 2 GHz Rev. V2 Evaluation Board Application Schematic VG C3 VD C2 RFIN VC C R ,, 6 FB C1 RFOUT Recommended PCB Layout Application Information for DC & pins For proper MAAM-111 operation a DC voltage must be applied at the V G (-.V) and V D (+V) pins in that order. Adjusting V G from -.2 V to -.6 V will change the quiescent current which can effect power and linearity if set below or above 7 ma. The gain of the MAAM-111 is controlled with the V C pin. The gain reduction is almost linear with V C between V to -2 V. Below -2 V internal ESD protection diodes will draw increasing current. The nominal open circuit voltage at the V C pin is +1 V and produces maximum gain and power. Limiting applications and zero crossing adjustment can be done by adjusting the V G and V C pins together. Parts List Component Value Package C1, C.22 µf 21 C2, C3.22 µf 2 FB 8 7 Ω 2 R1 1 KΩ 2 8. MACOM recommends using Murata part BLMGG71. To bias properly, a DC voltage must be applied at the output pin. Typically this is done with a 2 element bias network that consists of a choke and a DC blocking capacitor. We recommend a ferrite bead for the main bias choke and quality capacitor for the DC block. A simple 1 KΩ resistor can be used as a RF choke for the negative V G as applied to the input pin. It is recommended that the total ground (common mode) inductance not exceed.3 nh (3 ph). This is equivalent to placing at least four 8-mil (2-µm) diameter vias under the device, assuming an 8-mil (2-µm) thick RF layer to ground 3

4 MAAM-111 MHz - 2 GHz Rev. V2 Typical Performance Curves over Temperature Gain, V C = V, -2 V Return Loss 1 Input +2 C Input - C Input +8 C Output +2 C Output - C Output +8 C - VC = +2 C VC = - C VC = +8 C VC = C VC = -2 - C VC = C Reverse Isolation Noise Figure C - C +8 C 8 +2 C - C +8 C Output P1dB Input IP C - C +8 C +2 C - C +8 C

5 MAAM-111 MHz - 2 GHz Rev. V2 Typical Performance Curves vs. Control Voltage Gain Noise Figure 3 open V -.2 V -. V -.6 V -.8 V -1. V -1.2 V -1. V -1.6 V -1.8 V -2. V open -.6 V -1. V V -.8 V -1.6 V -.2 V -1. V -1.8 V -. V -1.2 V -2. V Input Return Loss Output Return Loss 1 VC = Open, 3 V VC = Open, V VC = Open, 7 V VC = -2, 3 V VC = -2, V VC = -2, 7 V VC = Open, 3 V VC = Open, V VC = Open, 7 V VC = -2, 3 V VC = -2, V VC = -2, 7 V Output P1dB Input IP VC = Open VC = V VC = -1 V VC = -2 V VC = Open, 3 V VC = Open, V VC = Open, 7 V

6 MAAM-111 MHz - 2 GHz Rev. V2 Typical Performance Curves Saturated Power 2 Saturated 1 GHz 2 VD = V 1 1 VC = Open VC = V VC = -1 V GHz Noise 1 GHz 3 2 VD = V 2-1 VD = V Input 1 GHz GHz 2 1 VD = V , VG = -. V VD = V, VG = -. V, VG = -. V, VG = -. V VD = V, VG = -. V, VG = -. V, VG = -.6 V VD = V, VG = -.6 V, VG = -.6 V

7 MAAM-111 MHz - 2 GHz Rev. V2 Lead-Free 1. x 1.2 mm 6-lead TDFN Reference Application Note S283 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is matte tin over Copper. 7

MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2

MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2 MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The

More information

MACP Temperature Compensated Directional RMS Power Detector GHz Rev. V1 Features Functional Schematic Description Pin Configuration 3

MACP Temperature Compensated Directional RMS Power Detector GHz Rev. V1 Features Functional Schematic Description Pin Configuration 3 Features Integrated Directional Coupler Low Insertion Loss:.5 db @ Min. detectable power: -15 dbm @ Dynamic range: 45 db @ Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm 6-Lead TDFN Halogen-Free

More information

MACP Temperature Compensated Directional RMS Power Detector 2-6 GHz Rev. V1 Features Integrated Directional Coupler Low Insertion Loss: 0.15 db

MACP Temperature Compensated Directional RMS Power Detector 2-6 GHz Rev. V1 Features Integrated Directional Coupler Low Insertion Loss: 0.15 db Features Integrated Directional Coupler Low Insertion Loss: 0.15 db @ 4 GHz Min. detectable power: -15 dbm @ 4 GHz Dynamic range: 45 db @ 4 GHz Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm

More information

MADS T. Schottky Limiter DC - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2.

MADS T. Schottky Limiter DC - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2. Features 3 Terminal LPF Broadband Shunt Structure Low Slope Resistance, 7 Ω +3 dbm Peak and CW Power Handling.6 db Shunt Insertion Loss +2 dbm Flat Leakage Power Lead-Free 1. x 1.2 mm 6-lead TDFN Package

More information

MADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3

MADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3 Features 3 Terminal LPF Broadband Shunt Structure Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 db Shunt Insertion Loss < +15 dbm Flat Leakage Power Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package

More information

RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1

RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1 Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead

More information

GND N/C GND RF IN N/C N/C N/C GND

GND N/C GND RF IN N/C N/C N/C GND MAAP-11246 Features High Gain: 23 db P1dB: dbm P SAT : 33 dbm IM3 Level: -22 dbc @ P OUT 27 dbm/tone Power Added Efficiency: 24% at P SAT Lead-Free 5 mm AQFN 32-lead Package RoHS* Compliant Description

More information

MAAM Driver Amplifier GHz Rev. V3. Functional Schematic. Features. Description. Pin Configuration 3,4. Ordering Information 1,2

MAAM Driver Amplifier GHz Rev. V3. Functional Schematic. Features. Description. Pin Configuration 3,4. Ordering Information 1,2 MAAM-11139 7. - 33. GHz Rev. V3 Features 3 Stage for 8/ GHz Bands 1 db Gain dbm Output Third Order Intercept (OIP3) dbm Output P1dB Variable Gain with Adjustable Bias Lead-Free mm Lead PQFN Package RoHS*

More information

MAAM Differential CATV Variable Gain Amplifier MHz Rev. V1. Functional Schematic. Features. Pin Configuration 3,4.

MAAM Differential CATV Variable Gain Amplifier MHz Rev. V1. Functional Schematic. Features. Pin Configuration 3,4. Features 36 db Gain 25 db Attenuation Range 2.5 db Noise Figure -62 dbc ACPR @ 67 dbmv Output -1 channel 256 QAM -60 dbc ACPR @ 59 dbmv/channel -4 channel 256 QAM 6 V, 930 ma Differential Input and Output

More information

MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C

MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated

More information

MAAM Optical Node RF Amplifier MHz Rev. V3. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2

MAAM Optical Node RF Amplifier MHz Rev. V3. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2 1 Features -8 dbm to +2 dbm Optical Input Range Low Equivalent Input Noise (EIN): 3.2 pa/rthz Single + V Bias 29 db Gain at MHz; 34 db Gain at 1000 MHz 27 db Gain Control Range +24 dbmv/ch Output at 0

More information

MAAM CATV 75 Ω Push Pull Amplifier MHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration 3

MAAM CATV 75 Ω Push Pull Amplifier MHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration 3 Features 25 db Gain 12 Volts DC Bias Differential Inputs and Outputs Low Distortion Adjustable Bias Current and Gain Control Lead-Free 5 x 7 mm 40-Lead PQFN Package Halogen-Free Green Mold Compound RoHS*

More information

MAAL Low Noise Amplifier GHz Rev. V2. Functional Block Diagram. Features. Description. Pin Configuration. Ordering Information 1,2

MAAL Low Noise Amplifier GHz Rev. V2. Functional Block Diagram. Features. Description. Pin Configuration. Ordering Information 1,2 MAAL. - 1.6 GHz Rev. V2 Features Low Noise Figure Excellent Input Return Loss Single Voltage Bias 3 V Integrated Active Bias Circuit Current Adjustable 2-8 ma with an External Resistor High Linearity,

More information

Parameter Test Conditions Units Min. Typ. Max. RFC to T X RFC to R X. P IN = +23 dbm, AC 80 MHz / 256 QAM

Parameter Test Conditions Units Min. Typ. Max. RFC to T X RFC to R X. P IN = +23 dbm, AC 80 MHz / 256 QAM Features 2.11a,n,ac Applications.9 db T X Insertion Loss 19 db R X Isolation 12 db R X Gain 2.2 db Noise Figure 1 ma Current - db EVM @ 23 dbm Input (2.11ac MHz / 256 QAM) Lead Free 2 mm 12-lead STQFN

More information

MAAL DIESMB. Low Noise Amplifier DC - 28 GHz. Features. Functional Schematic 1. Description. Pin Configuration 2. Ordering Information. Rev.

MAAL DIESMB. Low Noise Amplifier DC - 28 GHz. Features. Functional Schematic 1. Description. Pin Configuration 2. Ordering Information. Rev. MAAL-11141-DIE Features Ultra Wideband Performance Noise Figure: 1.4 db @ 8 GHz High Gain: 17 db @ 8 GHz Output IP3: 28 dbm @ 8 GHz Bias Voltage: V DD = - V Bias Current: I DSQ = 6 - ma Ω Matched Input

More information

MASW SPDT High Isolation Terminated Switch GHz Rev. V4. Features. Functional Block Diagram. Description. Pin Configuration 3

MASW SPDT High Isolation Terminated Switch GHz Rev. V4. Features. Functional Block Diagram. Description. Pin Configuration 3 Features Positive Voltage Control High Isolation: 62 db @ 1 GHz 65 db @ 2 GHz Low Insertion Loss: 0.65 db @ 1 GHz 0.70 db @ 2 GHz 50 Ω Internal Terminations Fast Settling for Low Gate Lag requirements

More information

XP1080-QU-EV1. Power Amplifier GHz. Functional Schematic. Features. Description. Pin Configuration 1. Ordering Information. Rev.

XP1080-QU-EV1. Power Amplifier GHz. Functional Schematic. Features. Description. Pin Configuration 1. Ordering Information. Rev. 2 3 4 5 6 7 8 16 15 14 13 12 11 10 Features Linear On-Chip Power Detector Output Power Adjust 25.0 db Small Signal Gain +27.0 dbm P1dB Compression Point +38.0 dbm OIP3 Lead-Free 7 mm 28-lead SMD Package

More information

MAAP Preliminary Information. Power Amplifier GHz. Preliminary - Rev. V2P. Features. Functional Schematic.

MAAP Preliminary Information. Power Amplifier GHz. Preliminary - Rev. V2P. Features. Functional Schematic. MAAP-11199 8-1 GHz Features Saturated Output Power: 24 dbm Gain: 12 db Input Return Loss: >1 db Output Return Loss: >1 db Reverse Isolation: >3 db Dimension: 18 x 2 µm 2 RoHS* Compliant Bare Die Functional

More information

MAOC Preliminary Information. Broadband Voltage Controlled Oscillator 6-12 GHz Preliminary - Rev. V3P. Features. Block Diagram.

MAOC Preliminary Information. Broadband Voltage Controlled Oscillator 6-12 GHz Preliminary - Rev. V3P. Features. Block Diagram. Features Octave Tuning Bandwidth Phase Noise: -95 dbc/hz @ 100 khz V TUNE Range: 0-23 V Low Current Consumption: 58 ma Excellent Temperature Stability +5 V Bias Supply Lead-Free 4 mm 24-Lead Package RoHS*

More information

MAAP STD Power Amplifier, 2 W GHz Rev. V2 Features Functional Schematic Description Pin Configuration2 Ordering Information1

MAAP STD Power Amplifier, 2 W GHz Rev. V2 Features Functional Schematic Description Pin Configuration2 Ordering Information1 Features 24 db Small Signal Gain 41 dbm Third Order Intercept Point (OIP3) >2 W Output P1dB 35 dbm Saturated Output Power Integrated Power Detector Bias 1330 ma @ 6 V Lead-Free 7 mm Cavity Package RoHS*

More information

MA4P T. Quad PIN Diode π Attenuator MHz. M/A-COM Products Rev. V2. Features. Functional Schematic. Description.

MA4P T. Quad PIN Diode π Attenuator MHz. M/A-COM Products Rev. V2. Features. Functional Schematic. Description. 1-4 MHz Features 4 PIN diodes in a SOT-2 Plastic Package Externally Selectable Bias and RF Matching Network 1 4, MHz Useable Frequency Band + 43 IP3 @ ( Ω) 1. db Loss @ ( Ω) 3 db Attenuation @ ( Ω) Lead-Free

More information

30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC

30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC AWB589 Data Sheet 3 ~ 12 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB589, a medium power amplifier MMIC, has high linearity and high efficiency over a wide

More information

MADR V to 250V Driver for High Power PIN Diode Switches Rev. V1. Functional Schematic. Features. Description. Pin Configuration 1

MADR V to 250V Driver for High Power PIN Diode Switches Rev. V1. Functional Schematic. Features. Description. Pin Configuration 1 Features 20 V to 250 V Back Bias in Off State 200 ma Series Diode Bias Current at +25 C 50 ma Shunt Diode Bias Current at +25 C Propagation Delay less than 8 µs Low Quiescent Current Consumption 3 V or

More information

NLB-310. Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz

NLB-310. Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz NLB-310 The NLB-310 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification

More information

XR1015-QH-EV1. Receiver GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2,3. Ordering Information 1

XR1015-QH-EV1. Receiver GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2,3. Ordering Information 1 1 11 1 3 1 19 XR115-QH 1-1 GHz Rev. V1 Features Integrated LNA, Mixer and LO Buffer Amplifier.5 db Noise Figure 1. db Conversion Gain Lead-Free mm lead QFN Package 1% RF, DC and NF Testing RoHS* Compliant

More information

TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information

TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block

More information

50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC

50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over

More information

NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V6P. Features. Functional Schematic.

NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V6P. Features. Functional Schematic. Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable from V Power Operation 16 db Gain @ 2.5 GHz 56% Drain Efficiency @ 2.5 GHz 100% RF Tested Lead-Free 3 x

More information

MAPS Digital Phase Shifter 4-Bit, GHz. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information 1

MAPS Digital Phase Shifter 4-Bit, GHz. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information 1 MAPS-1146 4-Bit, 8. - 12. GHz Features 4 Bit 36 Coverage with LSB = 22.5 Integrated CMOS Driver Serial or Parallel Control Low DC Power Consumption Minimal Attenuation Variation over Phase Shift Range

More information

MAOM Optical Modulator Driver Gbps Rev. V1 Features 3V to 8V Output Drive Level Single-Ended Input/Output High Gain 32 db Low Power Di

MAOM Optical Modulator Driver Gbps Rev. V1 Features 3V to 8V Output Drive Level Single-Ended Input/Output High Gain 32 db Low Power Di Features 3V to 8V Output Drive Level Single-Ended Input/Output High Gain 32 db Low Power Dissipation (0.95 W @ 6 Vo) Low Additive Jitter (typically 1.0 ps rms) 25 psec Edge Rates (20/80%) Lead-Free 11.4x8.9x1.4

More information

GHz Power Amplifier. GaAs Monolithic Microwave IC in SMD leadless package

GHz Power Amplifier. GaAs Monolithic Microwave IC in SMD leadless package GaAs Monolithic Microwave IC in SMD leadless package Description The is a four stage monolithic GaAs high power amplifier producing 1 Watt output power. It is highly linear, with possible gain control

More information

NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V4P. Features. Functional Schematic.

NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V4P. Features. Functional Schematic. Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable From 48 V Operation 16 db Gain @ 2.5 GHz 56 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Lead-Free 3x6 mm

More information

TQP DC-6 GHz Gain Block

TQP DC-6 GHz Gain Block Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE CATV Point to Point General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram DC-6000 MHz 15.4 db Gain @ 1.9 GHz 4 3.6

More information

TQP DC-6 GHz Gain Block

TQP DC-6 GHz Gain Block Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram

More information

MAGX PPR. Preliminary Information. 15 W GaN-Si Transistor in Surface Mount Plastic Package DC GHz. Preliminary - Rev. V2P.

MAGX PPR. Preliminary Information. 15 W GaN-Si Transistor in Surface Mount Plastic Package DC GHz. Preliminary - Rev. V2P. Features GaN on Si Depletion Mode Transistor Technology Unmatched, Common-Source Configuration Ideal for CW and Pulsed Applications Operation up to 50 V, Class AB Lead-Free 3 x 6 mm -lead DFN Package Halogen-Free

More information

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX High Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal High Gain Broadband High Dynamic Range without external Matching Components May be used as a replacement to RFMD SBB5089Z a,b SOT-89

More information

30 MHz to 6 GHz RF/IF Gain Block ADL5611

30 MHz to 6 GHz RF/IF Gain Block ADL5611 Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3

More information

GHz Packaged HPA. GaAs Monolithic Microwave IC in SMD leadless package. Output power (dbm)

GHz Packaged HPA. GaAs Monolithic Microwave IC in SMD leadless package. Output power (dbm) Output power (dbm) G Description GaAs Monolithic Microwave IC in SMD leadless package The is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a

More information

HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram

HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram v2.14 Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar Test Equipment Functional Diagram Features Wide Gain Control Range: 1 db Single

More information

TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information

TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information Applications Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features Cascadable Gain Block DC 6000 MHz 19.1 db Gain @ 1.9 GHz 4.7 db Noise Figure @ 1.9 GHz

More information

MAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features.

MAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features. Features 2 Watt Saturated Output Power Level Variable Drain Voltage (6-V) Operation x mm Lead PQFN Package RoHS Compliant Description The MAAP-67-PKG3 is a 3-stage 2 W power amplifier with on-chip bias

More information

Product Description VG111-F

Product Description VG111-F Gain Ctrl Product Features 1.7 2.7 GHz bandwidth 26.6 db Attenuation Range +39.5 dbm Output IP3 +22 dbm P1dB Constant IP3 & P1dB over attenuation range Single voltage supply Pb-free 6mm 2-pin QFN package

More information

50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC

50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC AWG115 Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG115, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a

More information

AH323-G. 2W High Linearity 5V 2-Stage Amplifier. Applications. Product Features. Functional Block Diagram. General Description.

AH323-G. 2W High Linearity 5V 2-Stage Amplifier. Applications. Product Features. Functional Block Diagram. General Description. Applications Base stations / Repeaters High Power Amplifiers 2G / 3G / 4G Wireless Infrastructure Femtocells LTE / WCDMA / CDMA 20 Pin 5x5 mm QFN Package Product Features Functional Block Diagram 700-2700

More information

TGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

TGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added

More information

Gain Control Range db

Gain Control Range db v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control

More information

0.5-20GHz Driver. GaAs Monolithic Microwave IC

0.5-20GHz Driver. GaAs Monolithic Microwave IC Gain, NF / P1dB, Pout WWG A3667A A3688A UMS 667A 688A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide

More information

Data Sheet AMMC KHz 80 GHz TWA. Description. Features. Typical Performance (Vd=5V, Idsq=0.1A) Component Image.

Data Sheet AMMC KHz 80 GHz TWA. Description. Features. Typical Performance (Vd=5V, Idsq=0.1A) Component Image. AMMC-525 3KHz 8 GHz TWA Data Sheet Description The AMMC-525 MMIC is a 3KHz to 8GHz ultra broadband traveling wave amplifier. In this operational frequency band, AMMC-525 provides 8dB gain with better than

More information

TQP3M9008 High Linearity LNA Gain Block

TQP3M9008 High Linearity LNA Gain Block Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 5-4 MHz 2 db Gain @ 1.9 GHz +35.5 dbm Output

More information

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.

More information

AG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)

AG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1) AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz +. dbm PdB @ 9 MHz +6 dbm OIP@ 9 MHz Single Voltage Supply Internally matched to Ω Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications

More information

AG303-63PCB. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (1)

AG303-63PCB. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (1) AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz + dbm PdB @ 9 MHz +6 dbm OIP @ 9 MHz Single Voltage Supply Internally matched to Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications

More information

TQP DC 6 GHz Gain Block

TQP DC 6 GHz Gain Block Product Description The is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 19 db gain, +31.7 dbm OIP3,

More information

TQP3M9008 High Linearity LNA Gain Block

TQP3M9008 High Linearity LNA Gain Block General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 2.6 db gain, +36 dbm OIP3, and 1.3 db Noise

More information

Parameter Min. Typ. Max. Units Frequency Range GHz

Parameter Min. Typ. Max. Units Frequency Range GHz v.312 27-31. GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar & VSAT Test Equipment Functional Diagram Features Wide Gain Control

More information

Features. = +25 C, Vdd = +10 V, Idd = 350 ma

Features. = +25 C, Vdd = +10 V, Idd = 350 ma HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High

More information

Applications Ordering Information

Applications Ordering Information Applications Repeaters Mobile Infrastructure Defense/Aerospace LTE / WCDMA / EDGE / CDMA General Purpose Wireless IF amplifier, RF driver amplifier Product Features 5-4 MHz Flat gain (14.7 ±.3 db) from.5

More information

TGA2521-SM GHz Linear Driver Amplifier Key Features Measured Performance

TGA2521-SM GHz Linear Driver Amplifier Key Features Measured Performance 17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical

More information

Monolithic Amplifier PGA Flat Gain, High Dynamic Range to 1.5 GHz. The Big Deal

Monolithic Amplifier PGA Flat Gain, High Dynamic Range to 1.5 GHz. The Big Deal Flat Gain, High Dynamic Range Monolithic Amplifier 75Ω 0.05 to 1.5 GHz The Big Deal High IP3 and IP2 Flat Gain / Excellent Return Loss Low Noise Figure SOT-89 PACKAGE Product Overview (RoHS compliant)

More information

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2] Typical Applications This is ideal for: Features Low Noise Figure: 1.8 db Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram High Gain: 19 db High

More information

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX Ultra Linear Low Noise Monolithic Amplifier 50Ω 0.05 to 4 GHz The Big Deal Ultra High IP3 Broadband High Dynamic Range May be used as a replacement for RFMD SPF-5189Z a,b SOT-89 PACKAGE Product Overview

More information

TGA2760-SM GHz Power Amplifier

TGA2760-SM GHz Power Amplifier Applications Point-to-Point Radio -Lead 8.0 x.0 x 2 mm Package Product Features Functional Block Diagram Frequency Range: 9.5 12 GHz Power: +42 dbm Psat Gain: 33 db Integrated Power Detector Bias: V D1

More information

MAAP Power Amplifier, 15 W GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information

MAAP Power Amplifier, 15 W GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information Features 15 W Power Amplifier 42 dbm Saturated Pulsed Output Power 17 db Large Signal Gain P SAT >40% Power Added Efficiency Dual Sided Bias Architecture On Chip Bias Circuit 100% On-Wafer DC, RF and Output

More information

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX in a single amplifier.

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX in a single amplifier. Flat Gain, Ultra-Wideband Monolithic Amplifier 50Ω 0.01 to 12 GHz The Big Deal Ultra broadband performance Excellent Gain Flatness through 8 GHz Broadband without external matching components CASE STYLE:

More information

MADR PIN Diode Driver for Series / Series High Power Switch Rev. 5. Pin Configuration. Features. Description

MADR PIN Diode Driver for Series / Series High Power Switch Rev. 5. Pin Configuration. Features. Description MADR-8888- Rev. Features High Drive Current Capability (± ) 7 Back Bias in Off State Switching Speed Approximately. Low Current Coumption Land Grid Array Package for SMT Applicatio Tape and Reel Packaging

More information

WJA V Active-Bias InGaP HBT Gain Block

WJA V Active-Bias InGaP HBT Gain Block Applications IF Amplifier VHF/UHF Transmission Wireless Infrastructure CATV / SATV / MoCA General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram 50 Ohm Cascadable Gain Block

More information

TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance

TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance 17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical

More information

QPA9801SR MHz 1/4W Balanced Amplifier. General Description. Product Features. Functional Block Diagram Applications. Ordering Information

QPA9801SR MHz 1/4W Balanced Amplifier. General Description. Product Features. Functional Block Diagram Applications. Ordering Information General Description The is a balanced amplifier module with embedded hybrid couplers to convert to single ended input and output ports. The module has an enable pin to allow for shutting down of the amplifier.

More information

DC-2.8 GHz InGaP HBT 0.5W Medium Power Amplifier

DC-2.8 GHz InGaP HBT 0.5W Medium Power Amplifier .W Medium Power Amplifier October 28 - Rev 6-Oct-8 CGB81-SC Features 18 m Linear Power @ 214 MHz 1. Gain @ 214 MHz 12 Gain @ 27 MHz 27 m P1 @ 214 MHz Low Performance Variation Over Temperature Low Cost:

More information

GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E

GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E 9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:

More information

TQP3M9035 High Linearity LNA Gain Block

TQP3M9035 High Linearity LNA Gain Block Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems Product Features 2x2mm 8-lead DFN plastic package Functional Block Diagram 5-4 MHz.66 db

More information

SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block

SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block Product Description Sirenza Microdevices SBB-389Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable

More information

SGB-6433(Z) Vbias RFOUT

SGB-6433(Z) Vbias RFOUT SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description RFMD s SGB-6433 is a high performance SiGe HBT MMIC amplifier

More information

2-4GHz Driver. GaAs Monolithic Microwave IC in SMD leadless package

2-4GHz Driver. GaAs Monolithic Microwave IC in SMD leadless package RoHS COMPLIANT GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4105-QDG is a monolithic twostage driver amplifier delivering 24dBm output power @ 1dB gain compression in the range

More information

HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description

HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description v.112 HMC14LP3CE AMPLIFIER, 24-43. GHz Typical Applications This HMC14LP3BE is ideal for: Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems Functional

More information

MMA C3 6-22GHz, 0.1W Gain Block Data Sheet

MMA C3 6-22GHz, 0.1W Gain Block Data Sheet Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vdd=5V P3dB: 19.5 dbm @Vdd=5V Gain: 14 db Vdd =3 to 6 V Ids = 130 ma Input and Output Fully Matched to 50 Ω Applications: Communication systems Microwave

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.1211 45 Analog Phase Shifter,

More information

QPA9120SR. High Gain High Linearity Driver Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPA9120SR. High Gain High Linearity Driver Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information Product Overview The is a wideband, high gain, and high linearity driver amplifier in a low-cost, RoHS compliant 3x3 mm QFN package. With Qorvo s E-pHEMT process, this amplifier delivers exceptional performance

More information

SCG002 HIGH LINEARITY BROADBAND AMPLIFIER

SCG002 HIGH LINEARITY BROADBAND AMPLIFIER SCG2 Features DC to 6 MHz 2 db Gain at 1 MHz 15 dbm Output P1dB at 1 MHz 29 dbm Output IP3 at 1 MHz 3.8 db Noise Figure at 2 MHz Applications Broadband Gain Blocks High Linearity Amplifiers Packages Available

More information

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier DATA SHEET SKY67107-306LF: 2.3-2.8 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier Applications LTE cellular infrastructure and ISM band systems Ultra low-noise, high gain and high linearity

More information

Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V

Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features

More information

FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS. T AMB = +25 C ( Unless otherwise specified )

FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS. T AMB = +25 C ( Unless otherwise specified ) Monolithic PIN SP5T Diode Switch FEATURES Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 db Insertion Loss 30 db Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction DESCRIPTION The

More information

TAT Ω phemt Adjustable Gain RF Amplifier

TAT Ω phemt Adjustable Gain RF Amplifier Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block Product Features Gain, return loss and bias externally

More information

SGA-6489 SGA-6489Z Pb

SGA-6489 SGA-6489Z Pb Product Description The SGA-689 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring micron emitters provides high F T and excellent thermal perfomance. The heterojunction

More information

Cascadable Broadband InGaP MMIC Amplifier

Cascadable Broadband InGaP MMIC Amplifier Cascadable Broadband InGaP MMIC Amplifier DC-14 GHz Description AKA-1310MT Akoustis AKA-1310MT cascadable broadband InGaP HBT MMIC amplifier is a low-cost high-performance solution for your general-purpose

More information

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX Flat Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal Ultra Flat Gain Broadband High Dynamic Range without external Matching Components May be used as a replacement to RFMD SBB4089Z a,b

More information

HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications

HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications v2.1 Typical Applications The HMC694LP4(E) is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment Features Wide Gain Control Range: 23 db Single Control Voltage

More information

GHz Power Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. Pout (dbm)

GHz Power Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. Pout (dbm) Pout (dbm) PAE at 1dB comp. ( %) YYWWG A3667A A3688A UMS YWWG A3667A A3688A UMS CHA6552-QJG Description GaAs Monolithic Microwave IC in SMD leadless package The CHA6552-QJG is a three stage monolithic

More information

50 MHz to 4.0 GHz RF/IF Gain Block ADL5602

50 MHz to 4.0 GHz RF/IF Gain Block ADL5602 Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0

More information

TGA2806-SM. CATV Linear Amplifier. Key Features. Measured Performance Small Signal Gain (75 Ω) includes balun losses

TGA2806-SM. CATV Linear Amplifier. Key Features. Measured Performance Small Signal Gain (75 Ω) includes balun losses CATV Linear Amplifier Key Features Frequency Range: 40MHz - 1GHz Gain: 20 db 1.7 db 75 Ω Noise Figure Ultra-Low Distortion: -67dBc ACPR typical Low DC Power Consumption Single Supply Bias:+8V, 380mA 28L

More information

Monolithic Amplifier PHA-202+ Ultra High Dynamic Range to 2.7 GHz. The Big Deal

Monolithic Amplifier PHA-202+ Ultra High Dynamic Range to 2.7 GHz. The Big Deal Ultra High Dynamic Range Monolithic Amplifier 50Ω 0.03 to 2.7 GHz The Big Deal Ultra High IP3, +46.1 dbm Broadband High Dynamic Range without external Matching Components Medium power, 1W Excellent return

More information

16-32GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD package

16-32GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD package Linear Gain Description GaAs Monolithic Microwave IC in SMD package The is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard phemt process:

More information

Features. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz

Features. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Typical Applications The HMC62LP / HMC62LPE Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C 3 I Test Instrumentation Fiber Optics Functional Diagram Features

More information

400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324

400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:.

More information

ECG002 InGaP HBT Gain Block

ECG002 InGaP HBT Gain Block Product Features DC 6 GHz 20 db Gain @ 1 GHz +15.5 dbm P1dB @ 1 GHz +29 dbm OIP3 @ 1 GHz 3.8 db Noise Figure Internally matched to 50 Ω Robust 1000V ESD, Class 1C Lead-free/green/RoHS-compliant SOT-86,

More information

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX Ultra Linear Low Noise Monolithic Amplifier 50Ω The Big Deal 0.05 to 4 GHz Ultra High IP3 Broadband High Dynamic Range without external Matching Components May be used as a replacement for RFMD SPF-5189Z

More information

20 MHz to 6 GHz RF/IF Gain Block ADL5542

20 MHz to 6 GHz RF/IF Gain Block ADL5542 FEATURES Fixed gain of db Operation up to 6 GHz Input/output internally matched to Ω Integrated bias control circuit Output IP3 46 dbm at MHz 4 dbm at 9 MHz Output 1 db compression:.6 db at 9 MHz Noise

More information

CMD158C GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.0 V, T A = 25 o C, F = 11 GHz

CMD158C GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.0 V, T A = 25 o C, F = 11 GHz Features Functional Block Diagram Broadband performance High output power Low current consumption Single supply voltage: +5.0 V @ 95 ma Pb-free RoHs compliant 4x4 QFN package Description The CMD158C4 is

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC32LC Typical Applications

More information