MAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features.

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1 Features 2 Watt Saturated Output Power Level Variable Drain Voltage (6-V) Operation x mm Lead PQFN Package RoHS Compliant Description The MAAP-67-PKG3 is a 3-stage 2 W power amplifier with on-chip bias networks in a lead MLP package, allowing easy assembly. This product is fully matched to ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. (PIN 1) RF IN (PIN ) YYWW AP67G XXX MACOM RF OUT Each device is % RF tested to ensure performance compliance. The part is fabricated using M/A-COM s GaAs Multifunction Self- Aligned Gate (MSAG) Process. The mm PQFN package has a lead-free lead finish that is RoHS compliant and compatible with a o C reflow temperature. The package also features low lead inductance and an excellent thermal path. The MTTF is >1,, hours at 17 o C. Primary Applications: Point-to-Point Radio SatCom Ordering Information Description Die Tape & Reel () Tape & Reel () Die Sample Board Plastic Pkg Sample Brd Part Number MAAPGM67-DIE MAAP-67-TR MAAP-67-TR MAAP-67-SMB4 MAAP-67-SMB3 Electrical Characteristics: T C = C 1, Z =Ω, V DD =8V, I DQ =6mA 2, P in =dbm, R G =1Ω Parameter Symbol Min Typical Max Units Bandwidth f.1 8. GHz Output Power P OUT dbm 1-dB Compression Point P1dB 33 dbm Small Signal Gain G. db Power Added Efficiency PAE % Input VSWR VSWR 1.7:1 Output VSWR VSWR 2.:1 Gate Supply Current I GG 7 ma Drain Supply Current, under RF Drive I DD 9 1 ma Output Third Order Intercept P OUT = dbm (SCL) Output Third Order Intermod, P OUT = dbm (SCL) TOI 41 dbm IM3 dbc 1 1. T C = Case Temperature 2. Adjust V GG between 2.7 and 1.2V to achieve specified I DQ. North America Tel: / Fax: Europe Tel: / Fax:

2 Maximum Ratings 3 Parameter Symbol Absolute Maximum Units Input Power P IN 17 dbm Drain Supply Voltage V DD +. V Gate Supply Voltage V GG -3. V Quiescent Drain Current (No RF) I DQ 1.2 A Quiescent DC Power Dissipated (No RF) P DISS.2 W Junction Temperature T J 17 C Storage Temperature T STG - to +1 C 3. Operation beyond these limits may result in permanent damage to the part. Exceeding any one or combination of these limits may cause permanent damage to this device. Recommended Operating Conditions 4 Characteristic Symbol Min Typ Max Unit Drain Supply Voltage V DD V Gate Supply Voltage V GG V Input Power P IN.. dbm Thermal Resistance Θ JC.6 C/W Case Temperature T C Note C 4. Operation outside of these ranges may reduce product reliability.. Case Temperature = 17 C Θ JC * V DD * I DQ Power Derating Curve, Quiescent (No RF) Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply V GG = -2.7V, V DD = V. 2. Ramp V DD to desired voltage, typically 8. V. 3. Adjust V GG to set I DQ, 2. V). 4. Set RF input.. Power down sequence in reverse. Turn V GG off last. Peak Power Dissipation, Pdiss (W) Maximum Case Temperature ( C) 2 North America Tel: / Fax: Europe Tel: / Fax:

3 6 6V 8V V 6V 8V V Small Signal Gain P1dB (dbm) Gain (db) VSWR Output VSWR Figure 1. 1dB Compression Point vs. Frequency and Drain Voltage at IDQ = 6mA 4 Input VSWR Figure 2. Small Signal Gain and Input & Output VSWR vs. Frequency and Drain Voltage at IDQ = 6 ma 6V 8V V 4 6V 8V V PAE (%) Figure 3. Saturated Output Power vs. Frequency and Drain Voltage at IDQ = 6mA Figure 4. Saturated Power Added Efficiency vs. Frequency and Drain Voltage at IDQ = 6mA 1. SSG POUT PAE IDS.9 -ºC ºC 9ºC SSG (db), POUT (dbm), & PAE (%) IDS (A) Case Temperature (ºC) 3 Figure. Saturated Output Power vs Frequency and Case Temperature at Vd = 8V and IDQ = 6mA Figure 6. Small Signal Gain & Saturated Output Power, Power Added Efficiency, and Drain Current vs Case Temperature at 7GHz, VD = 8V and IDQ = 6mA North America Tel: / Fax: Europe Tel: / Fax:

4 VD = V VD = 8V VD = 6V Figure 7. Output Power vs. Input Power and Frequency at VD = 6V and IDQ = 6mA Figure 9. Output Power vs. Input Power and Frequency at VD = 8V and IDQ = 6mA Gain (db) Gain (db) Gain (db) Figure 8. Gain vs. Output Power and Frequency at VD = 6V and IDQ = 6mA Figure. Gain vs. Output Power and Frequency at VD = 8V and IDQ = 6mA Figure 11. Output Power vs. Input Power and Frequency at VD = V and IDQ = 6mA Figure. Gain vs. Output Power and Frequency at VD = V and IDQ = 6mA North America Tel: / Fax: Europe Tel: / Fax:

5 VD = V VD = 8V VD = 6V PAE (%) PAE (%) PAE (%) Figure 13. Power Added Efficiency vs. Input Power and Frequency at VD = 6V and IDQ = 6mA Figure. Power Added Efficiency vs. Input Power and Frequency at VD = 8V and IDQ = 6mA Drain Current (A) Drain Current (A) Drain Current (A) Figure 14. Drain Current vs. Input Power and Frequency at VD = 6V and IDQ = 6mA Figure 16. Drain Current vs. Input Power and Frequency at VD = 8V and IDQ = 6mA Figure 17. Power Added Efficiency vs. Input Power and Frequency at VD = V and IDQ = 6mA Figure 18. Darin Current vs. Input Power and Frequency at VD = V and IDQ = 6mA North America Tel: / Fax: Europe Tel: / Fax:

6 VD = V VD = 8V VD = 6V TOI (dbm) TOI (dbm) TOI (dbm) Figure 19. Third Order Intercept vs. Output Power and Frequency at VD = 6V and IDQ = 6mA Figure 21. Third Order Intercept vs. Output Power and Frequency at VD = 8V and IDQ = 6mA IM3 (dbc) IM3 (dbc) IM3 (dbc) Figure. Third Order Intermod vs. Output Power and Frequency at VD = 6V and IDQ = 6mA Figure. Third Order Intermod vs. Output Power and Frequency at VD = 8V and IDQ = 6mA x Figure 23. Third Order Intercept vs. Output Power and Frequency at VD = V and IDQ = 6mA Figure. Third Order Intermod vs. Output Power and Frequency at VD = V and IDQ = 6mA North America Tel: / Fax: Europe Tel: / Fax:

7 GHZ 7 GHZ 8 GHZ 6 GHZ 7 GHZ 8 GHZ 4 TOI (dbm) IM3 (dbc) Case Temperature (ºC) Figure. Third Order Intercept vs. Temperature and Frequency at Single Carrier Output Power Level = 23 dbm, VD = 8V and IDQ = 6mA Case Temperature (ºC) Figure. Third Order Intermod vs. Temperature and Frequency at Single Carrier Output Power Level = 23 dbm, VD = 8V and IDQ = 6mA 7 North America Tel: / Fax: Europe Tel: / Fax:

8 o AP67G o Figure 27. x mm -Lead MLP. pf* pf*.1μf (PIN ) RF ports are internally dc blocked (PIN 1) RF IN YYWW AP67G XXX MACOM RF OUT 1 Ω. RG.1μF pf* pf* * Place pf capacitors as close to the package as possible. Figure. Recommended Bias Configuration. Note: The exposed pad centered on the package bottom must be connected to RF and dc ground for proper electrical and thermal operation. Reference M/A-COM application note S83 for information regarding solder profiles. Reference Figure for our suggested via hole pattern for power devices. *Application Notes can be found by going to and searching for the required Application Note.. 8 North America Tel: / Fax: Europe Tel: / Fax:

9 Figure 29. Demonstration Board PN MAAP-67-SMB3 (available upon request). o 9 Figure. PCB Land Design North America Tel: / Fax: Europe Tel: / Fax: