17-35GHz MPA/Multiplier TGA4040SM
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1 Not Recommended for New Designs Advance Product Information 17-35GHz MPA/Multiplier TriQuint Recommends the TGA43-SM or TGA431-SM be used for New Designs Key Features Product Description The TriQuint TG44SM is a Medium Power Amplifier and Multiplier for a wide band of 17 35GHz applications. The part is designed using TriQuint s.15um power phemt production process. The provides a nominal 22 db small signal gain with 18 dbm output 1 db gain compression. For 2x and 3x Multiplier Function, provides 15 dbm typical of Output 9 dbm Pin. The part is ideally suited for applications such as Point-to-Point Radio, EW, Instrumentation and frequency multipliers. S21 (db) Frequency: GHz 22 db Nominal Mid-band 18 dbm Nominal Output P1dB 2x and 3x Multiplier Function 3 dbc 11 dbm Pout/tone Package Dimensions: 5. x 5. x 1. mm Primary Applications Point-to-point radio EW Instrumentation Frequency Multiplier Amplifier Performance Bias Conditions: Vd = 5 V, Idq = 139 ma S22 S21 S S11 & S22 (db) Evaluation boards are available upon request. Lead-Free & RoHS compliant. P1dB (dbm) Datasheet subject to change without notice TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 1
2 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES Vd Drain Voltage 6 V 2/ Vg Gate Voltage Range -2 TO V Id Drain Current TBD 2/ 3/ Ig Gate Current 7 ma 3/ P IN Input Continuous Wave Power 2 dbm P D Power Dissipation See note 4/ 2/ T CH Operating Channel Temperature 15 C 5/ T M Mounting Temperature (3 Seconds) 26 C T STG Storage Temperature -65 to 15 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P D. 3/ Total current for the entire MMIC. 4/ For a median life time of 1E+6 hrs, Power dissipation is limited to: P D (max) = (15 C T BASE C) / 66.7 ( C/W) Where T BASE is the base plate temperature. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possibl levels. TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 2
3 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 C Nominal) PARAMETER Amplifier 2x Multiplier 3x Multiplier UNITS Frequency Range GHz Drain Voltage, Vd1* V Drain Voltage, Vd* V Total Drain Current* ma Gate Voltage, Vg1* -1.1 V Gate Voltage, Vg* -.65 V Small Signal Gain, S db Input Return Loss, S db Output Return Loss, S db Output 1dB Gain compression, P1dB 139mA dbm 11 dbm Pout/ Tone dbc Output Pin = 9dBm dbm Gain Temperature Coefficient db/ C * See bias plan on page 8 for amplifier and 2x multiplier, page 9 for 3x multiplier TABLE III THERMAL INFORMATION PARAMETER TEST CONDITIONS T CH ( O C) θ JC ( C/W) T M (HRS) θ JC Thermal Resistance (channel to Case) Vd = 5 V Id = 139 ma Pdiss =.69 W E+7 Note: 8mil board will have 5 to 6 degc higher for T CH. TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 3
4 Measured Amplifier Data Bias Conditions: Vd = 5 V, Idq = 14 ma S21 (db) S21 S22 S S11 & S22 (db) P1dB (dbm) TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 4
5 Psat (dbm) Measured Amplifier Data Bias Conditions: Vd = 5 V, Idq = 14 ma PAE (%) Id (A) Pin (dbm) 17 GHz 19 GHz 21 GHz 23 GHz 25 GHz 27 GHz 29 GHz 31 GHz 33 GHz 35 GHz 37 GHz 39 GHz 41 GHz 43 GHz TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 5
6 Measured Amplifier Data Bias Conditions: Vd = 5 V, Idq = 14 ma 18 Noise Figure (db) TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 6
7 Measured 2X Multiplier Data Bias Conditions: Vd = 5 V, Idq = 12mA, Vg1 = -1.1V, Pin = 9dBm Conversion Gain (db) TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 7
8 Measured 3X Multiplier Data Bias Conditions: Vd = 5 V, Vd1 = 1V, Idq = 16mA, Pin = 8dBm Pout (dbm) Conversion Gain (db) TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 8
9 Package Pin out Pin 19 Pin 2 Pin 21 Pin 22 Pin 23 Pin 24 TGA44 Pin 18 Pin 17 Pin 16 Pin 15 Pin 14 Pin 13 Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Top View Pin 12 Pin 11 Pin Pin 9 Pin 8 Pin 7 Bottom View Pin Description Pin Description 1 N/C 13 N/C 2 N/C 14 N/C 3 RF In 15 N/C 4 N/C 16 RF Out 5 N/C 17 N/C 6 N/C 18 N/C 7 N/C 19 N/C 8 N/C 2 N/C 9 Vg1 21 Vd N/C 22 N/C 11 Vg 23 Vd1 12 N/C 24 N/C TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 9
10 Mechanical Drawing Units: Millimeters TriQuint Semiconductor Texas: Phone (972) Fax (972) Web:
11 Characterization Board.1uF.1uF.1uF.1uF There are uf capacitor. TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 11
12 Recommended Power Supply Connection Diagram Amplifier & 2x Multiplier Vd = 5V Amplifier Set Vd = 5.V Vary (Vg + Vg1) to achieve Id = 14mA Vg Vd = 5V 2x Multiplier Set Vd = 5.V Set Vg1 = -1.1V Vary Vg to achieve Id = 12mA Vg1 Vg TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 12
13 Recommended Chip Assembly Diagram 3x Multiplier Vd = 1V Vd = 5V Vg 3x Multiplier Set Vd = 5.V Set Vd1 = 1.V Vary (Vg + Vg1) to achieve(id + Id1) = 16mA TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 13
14 Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 C/sec 3 C/sec Activation Time and Temperature C C Time above Melting Point 6 15 sec 6 15 sec Max Peak Temperature 24 C 26 C Time within 5 C of Peak Temperature 2 sec 2 sec Ramp-down Rate 4 6 C/sec 4 6 C/sec TriQuint Semiconductor Texas: Phone (972) Fax (972) Info-mmw@tqs.com Web: 14
TGA2701-SM 3 Watt C-Band Packaged Power Amplifier Key Features Measured Performance Primary Applications Product Description
3 Watt C-Band Packaged Power Amplifier Key Features Frequency Range: 5.9 8.5 GHz Power: 35 dbm Psat, 34 dbm P1dB Gain: 18 db TOI: 42 dbm PAE: 37% NF: 7.5 db Bias: Vd = 6 V, Id = 1.0 A, Vg = -0.6 V Typical
TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
2 Watt Packaged Amplifier TGA2902-SCC-SG
2 Watt Packaged Amplifier Gain (db) Preliminary Measured Performance Bias Conditions: V D = 7.5V, I D = 65mA 25 2 15 1 5 S21 S11 S22 1 5-5 -1-15 Return Loss (db) Key Features and Performance 34 dbm Midband
TGA2521-SM GHz Linear Driver Amplifier Key Features Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
17-24 GHz Linear Driver Amplifier. S11 and S22 (db) -15
Pout (dbm) or OTOI (dbm) S21 (db) S11 and S22 (db) 17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical
17-24 GHz Linear Driver Amplifier. S11 and S22 (db -15. TriQuint Semiconductor: www. triquint.com (972) Fax (972)
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
TGA2602-SM MHz High IP3 Dual phemt. Key Features and Performance. Measured Performance. Primary Applications. Product Description
800-3000 MHz High IP3 Dual phemt Key Features and Performance 800-3000 MHz Frequency Range
TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
33-47 GHz Wide Band Driver Amplifier TGA4522
33-47 GHz Wide Band Driver Amplifier Key Features Frequency Range: 33-47 GHz 27.5 dbm Nominal Psat @ 38GHz 27 dbm P1dB @ 38 GHz 36 dbm OTOI @ Pin = 19 dbm/tone 18 db Nominal Gain @ 38GHz db Nominal Return
17-43 GHz MPA / Multiplier. S-Parameters (db) P1dB (dbm)
17-43 GHz MPA / Multiplier Key Features Frequency: 17-43 GHz 25 db Nominal Gain @ Mid-band 22 dbm Nominal Output P1dB 2x and 3x Multiplier Function.15 um 3MI phemt Technology Chip Dimensions 1.72 x.76
27-31 GHz 2W Balanced Power Amplifier TGA4513-CP
27-31 GHz 2W Balanced Power Amplifier Key Features 27-31 GHz Bandwidth > 32 dbm Nominal P1dB 33 dbm Nominal Psat 22 db Nominal Gain IMD3 is 32 dbc @ 18 dbm SCL 12 db Nominal Return Loss Bias: 6 V, 84 ma
TGA2601-SM MHz High IP3 Dual phemt. Key Features and Performance. Measured Performance. Primary Applications. Product Description
800-3000 MHz High IP3 Dual phemt Key Features and Performance 800-3000 MHz Frequency Range
14-17 GHz Packaged Doubler with Amplifier. TriQuint Semiconductor: www. triquint.com (972) Fax (972) April 2012 Rev B
14-17 GHz Packaged Doubler with Amplifier Key Features RF Output Frequency Range: 28-34 GHz Input Frequency Range: 14-17 GHz Output Power: 20 dbm Nominal Conversion Gain: 15 db Nominal Input Frequency
TGL4203-SM. DC - 30 GHz Wideband Analog Attenuator. Key Features. Measured Performance
DC - 30 GHz Wideband Analog Attenuator Key Features Frequency Range: DC to 30 GHz 17 db Variable Attenuation Range Insertion Loss: 1.5 db Typical Input P1dB: >20 dbm Typical @ 10 db Attenuation IM3: -40
TGA2509. Wideband 1W HPA with AGC
Product Description The TriQuint TGA2509 is a compact Wideband High Power Amplifier with AGC. The HPA operates from 2-22 GHz and is designed using TriQuint s proven standard 0.25 um gate phemt production
TGA4811. DC - 60 GHz Low Noise Amplifier
TGA11 DC - GHz Low Noise Amplifier Key Features GHz Bandwidth 3. db noise figure > 15 db small signal gain 13 dbm P1dB +/- 7 ps group delay variation Bias:.5V, 5 ma.15 um 3MI mhemt Technology Chip Dimensions:
TGA2806-SM. CATV Linear Amplifier. Key Features. Measured Performance Small Signal Gain (75 Ω) includes balun losses
CATV Linear Amplifier Key Features Frequency Range: 40MHz - 1GHz Gain: 20 db 1.7 db 75 Ω Noise Figure Ultra-Low Distortion: -67dBc ACPR typical Low DC Power Consumption Single Supply Bias:+8V, 380mA 28L
27-31 GHz 2W Balanced Power Amplifier TGA4513
27-31 GHz 2W Balanced Power Amplifier Key Features 27-31 GHz Bandwidth > 32 dbm P1dB 33 dbm Psat 2 db Nominal Gain IMR3 is 37 dbc @ 18 dbm SCL 14 db Nominal Return Loss Bias: 6 V, 84 ma.25 um 3MI MMW phemt
Ka-Band 2W Power Amplifier
Ka-Band 2W Power Amplifier Key Features 30-40 GHz Bandwidth > 33 dbm Nominal Psat @ Pin = 20dBm 18 db Nominal Gain Bias: 6 V, 50 ma Idq (1.9A under RF Drive) 0.15 um 3MI MMW phemt Technology Thermal Spreader
4 Watt Ka-Band HPA Key Features Measured Performance Primary Applications Ka-Band VSAT Product Description
4 Watt Ka-Band HPA Key Features Frequency Range: 28-31 GHz 3 dbm Nominal Psat Gain: 24 db Return Loss: -8 db Bias: Vd = V, Idq = 1. A, Vg = -.75 V Typical Technology: 3MI.15 um Power phemt Chip Dimensions:
Product Data Sheet August 5, 2008
TriQuint Recommends the TGA4516 be used for New Designs 33-36 GHz 2W Power Amplifier Key Features 0.25 um phemt Technology 17 db Nominal Gain 31 dbm Pout @ P1dB, Psat 33dBm @ 6V, 34dBm @7V Bias 6-7V @
TGA2803-SM. CATV TIA / Gain Block. Applications. Product Features. Measured Performance. General Description. Ordering Information
Applications HFC Nodes CATV Line Amplifiers Head End Equipment Product Features Top View Bottom View Frequency Range: 40 MHz 1218 MHz 20 db Flat Gain 800 Transimpedance (1) < 5 pa / Hz Equivalent Input
TGA4830. Wideband Low Noise Amplifier. Key Features and Performance. Measured Performance V + = 5V, I + = 50mA. Primary Applications
Wideband Low Noise Amplifier Measured Performance V + = 5V, I + = 50mA Key Features and Performance DC - 45GHz Frequency Range 13dB Gain @ 20GHz 15dB Return Loss @ 20GHz 11.5dBm Typical P1dB 3.2dB Typical
DC - 20 GHz Discrete power phemt
DC - 20 GHz Discrete power phemt Product Description The TriQuint is a discrete 0.6 mm phemt which operates from DC-20 GHz. The is designed using TriQuint s proven standard 0.3um power phemt production
27-31 GHz 1W Power Amplifier TGA4509-EPU
27-31 GHz 1W Power Amplifier Key Features 22 db Nominal Gain @ 30 GHz 30 dbm Nominal Pout @ P1dB 25% PAE @ P1dB -10 db Nominal Return Loss Built-in Power Detector 0.25-µm mmw phemt 3MI Bias Conditions:
TGA4533-SM K-Band Power Amplifier
Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm L Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: dbm Psat, 31 dbm P1dB Gain: 22 db TOI: 41 dbm at 21 dbm SCL
Gb/s Linear Optical Modulator Driver OC-192 Metro and Long Haul Applications Surface Mount Package
9.9-12.5Gb/s Linear Optical Modulator Driver OC-192 Metro and Long Haul Applications Surface Mount Package Key Features and Performance Up to 10 V PP Linear Output Voltage 20 db Gain Internal DC Blocks
Applications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier
Applications Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 10 12 GHz TOI: 43 dbm Power: 34.5 dbm Psat, 33 dbm P1dB Gain: 24 db Return
TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier
TGA78-CP Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal Gain: > db IM3: -
TGA GHz Low Noise Amplifier with AGC. Key Features
NF (db) Gain, IRL, ORL (db) 2 2 GHz Low Noise Amplifier with AGC Measured Performance Bias conditions: Vd = V, Id = ma, Vg1 =. V, 2 2 2 2 3 3 9 8 7 6 4 3 2 1 Vg2 = +1.3 V Typical 2 4 6 8 12 14 16 18 2
TGA4532 K-Band Power Amplifier
Applications Point-to-Point Radio Communication Product Features Functional Block Diagram Frequency Range: 17.5 20 GHz Power: 32.5 dbm Psat, 31.5 dbm P1dB Gain: 23 db TOI: 43 dbm @ 22 dbm SCL Return Loss:
TGA Watt Ka-Band HPA. Key Features. Measured Performance Bias conditions: Vd = 6 V, Idq = 3200 ma, Vg = -0.7 V Typical
7 Watt Ka-Band HPA Key Features Frequency Range: 29-31 GHz 38.5 dbm Nominal Psat, 38 dbm Nominal P1dB Gain: 21 db Return Losses: -10 db Bias: Vd = 6 V, Idq = 3.2 A, Vg = -0.7 V Typical, Id under RF drive
TGA3504-SM 2-30 GHz GaAs Wideband Gain Block
TGA54-SM Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range:
6-13 GHz Low Noise Amplifier TGA8399B-SCC
6-13 GHz Low Noise Amplifier Key Features and Performance 6-13 GHz Frequency Range 1.5 db Typical Noise Figure Midband 26 db Nominal Gain High Input Power Handling: ~ 20dBm Balanced Input for Low VSWR
TGA2818-SM S-Band 30 W GaN Power Amplifier
S-Band 3 W GaN Power Amplifier Applications Military Radar Civilian Radar Wideband Amplifiers Product Features Functional Block Diagram Frequency Range: 2.8-3.7 GHz Pout: >.5 dbm (Pin=27 dbm) Large Signal
TGA4906-SM 4 Watt Ka-Band Power Amplifier
TGA496-SM Applications Ka-Band Sat-Com VSAT 496 12 M34 QFN x mm 32L Product Features Functional Block Diagram Frequency Range: 28 31 GHz Power: 36 dbm Psat Gain: db Bias: Vd = 6 V, Idq = 1.6 A, Vg = -.7
TGA GHz 2.5 Watt, 25dB Power Amplifier. Key Features and Performance. Preliminary Measured Performance Bias Conditions: Vd=7V Id=640mA
13-17 GHz 2.5 Watt, 25dB Power Amplifier Preliminary Measured Performance Bias Conditions: Vd=7V Id=640mA Key Features and Performance 34 dbm Midband Pout 25 db Nominal Gain 7 db Typical Input Return Loss
12-18 GHz Ku-Band 3-Stage Driver Amplifier TGA2507
12- GHz Ku-Band 3-Stage Driver Amplifier Key Features 12- GHz Bandwidth 28 db Nominal Gain dbm P1dB Bias: 5,6,7 V, 80 ± 10% ma Self Bias 0.5 um 3MI mmw phemt Technology Chip Dimensions: 1.80 x 0.83 x 0.1
6-18 GHz High Power Amplifier TGA9092-SCC
6-18 GHz High Power Amplifier Key Features and Performance Dual Channel Power Amplifier 0.25um phemt Technology 6-18 GHz Frequency Range 2.8 W/Channel Midband Pout 5.6 W Pout Combined 24 db Nominal Gain
TGA3503-SM 2-30 GHz GaAs Wideband Gain Block
Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range: 2 3 GHz
GaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM153040WM-BM-R AM153040WM-FM-R Aug 2010 Rev 0 DESCRIPTION AMCOM s is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET PHEMT MMIC power amplifier.
TGA2622-CP 9 10 GHz 35 W GaN Power Amplifier
9 1 GHz W GaN Power Amplifier Applications Weather and Marine Radar Product Features Frequency Range: 9 1 GHz PSAT:.5 dbm @ PIN = 18 dbm PAE: >% @ PIN = 18 dbm Power Gain: 27.5 db @ PIN = 18 dbm Bias:
MAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features.
Features 2 Watt Saturated Output Power Level Variable Drain Voltage (6-V) Operation x mm Lead PQFN Package RoHS Compliant Description The MAAP-67-PKG3 is a 3-stage 2 W power amplifier with on-chip bias
TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 3.7 GHz PSAT:.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db Bias:
AM153540WM-BM-R AM153540WM-EM-R AM153540WM-FM-R
AM15354WM-BM-R AM15354WM-EM-R AM15354WM-FM-R November 217 DESCRIPTION AMCOM s AM15354WM-BM-R AM15354WM-EM-R and AM15354WM-FM-R are part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs
TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7-3.7 GHz P SAT :.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db
TGA FL 2.5 to 6GHz 40W GaN Power Amplifier
2.5 to 6GHz 4W GaN Power Amplifier Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Frequency Range: 2.5 to 6 GHz P SAT : 46.5 dbm @ PIN = 26dBm, CW PAE:
TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier
2 to, W GaN Power Amplifier Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal
TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Measured Performance. Primary Applications Space Military Broadband Wireless
6 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz > 38 dbm Nominal Psat 55% Maximum PAE 15 db Nominal Power Gain Bias: Vd = 28-40 V, Idq = 125 ma, Vg = -3 V Typical Technology:
TGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
TGA94-HM Product Description Qorvo s TGA94-HM is a packaged power amplifier fabricated on Qorvo s. um GaN on SiC process (QGaN). Operating from 27 to 31 GHz, the TGA94- HM achieves 36.5 dbm saturated output
TGF Watt Discrete Power GaN on SiC HEMT
Applications Marine radar Satellite communications Point to point communications Military communications Broadband amplifiers High efficiency amplifiers Product Features Functional Block Diagram Frequency
TGA2710-SM 8W GHz Power Amplifier
Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9.5-11.5 GHz Saturated Output Power: 39 dbm Small
TGP GHz 180 Phase Shifter. Primary Applications. Product Description. Measured Performance
Amplitude Error (db) S21 (db) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 Measured Performance 0.0 140 30 31 32 33 34 35 36 37 38 39 40 0-1 -2-3 -4-5 State 0-6 State 1-7 -8-9 -10 30 31 32 33 34 35 36 37 38
QPA1003D. 1 8 GHz 10 W GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
Product Description Qorvo s is a wideband high power MMIC amplifier fabricated on Qorvo s production.15um GaN on SiC process (QGaN15). The operates from 1 8 GHz and typically provides W saturated output
TGA4801. DC 35 GHz MPA with AGC. Key Features and Performance. Primary Applications: Description
DC 35 GHz MPA with AGC Key Features and Performance 0.25um phemt Technology DC - 23GHz Linear BW DC - 35GHz Saturated Power BW 14dB Small Signal Gain 10ps Edge Rates (20/80) 7Vpp 43Gb/s NRZ PRBS Amplitude
TGA2704-SM 8W 9-11 GHz Power Amplifier
Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9 - Saturated Output Power: 39 dbm Small Signal
TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Measured Performance. Primary Applications Space Military Broadband Wireless
12 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz > 41 dbm Nominal Psat 55% Maximum PAE 15 db Nominal Power Gain Bias: Vd = 28-40 V, Idq = 250 ma, Vg = -3 V Typical Technology:
Features. = +25 C, Vdd = +5V, Idd = 400mA [1]
![Features. = +25 C, Vdd = +5V, Idd = 400mA [1]](/thumbs/78/77182342.jpg "Features. = +25 C, Vdd = +5V, Idd = 400mA [1]")
v.61 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Features Saturated Output Power:.5 dbm @ 21% PAE High Output IP3: 34.5 dbm High Gain:.5
QPA1003P 1 8 GHz 10 W GaN Power Amplifier
QPA13P 1 8 GHz 1 W GaN Power Amplifier Product Description Qorvo s QPA13P is a wideband high power MMIC amplifier fabricated on Qorvo s production.um GaN on SiC process (QGaN). The QPA13P operates from
GaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM324036WM-BM-R AM324036WM-FM-R Aug 10 Rev 6 DESCRIPTION AMCOM s is part of the GaAs MMIC power amplifier series. It has 29dB gain and 36dBm output power over the 3.2 to 4.0GHz
TGA2214-CP 2 18 GHz 4 W GaN Power Amplifier
Product Description Qorvo s TGA2214-CP is a packaged wideband power amplifier fabricated on Qorvo s QGaN15 0.15 µm GaN on SiC process. Operating from 2 to 18 GHz, the TGA2214- CP generates > 4 W saturated
TGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM
Features. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier
Applications Radar Product Features Frequency Range:.1. GHz Pout: 9 dbm at PIN = 7 dbm PAE: 5 % Pulsed Power Gain: db at PIN = 7 dbm Bias: VD = V, IDQ = ma, VG = - V typical, pulsed (PW = 15 ms, DC = %)
High Power DC - 18GHz SPDT FET Switch
High Power DC - 18GHz SPDT FET Switch Key Features and Performance DC - 18 GHz Frequency Range 29 dbm Input P1dB @ V C = -5V > 30 db Isolation
TGA FL 20W Ku-Band GaN Power Amplifier
TGA279-2-FL Applications Ku-band Communications Product Features Frequency Range: 14.0 1. GHz P SAT : 43 dbm PAE: 27% Small Signal Gain: db Integrated Voltage Detector Bias: V D = 2 V, I DQ = 1.0 A, V
TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Primary Applications Defense & Aerospace Broadband Wireless. Product Description
50 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz 47 dbm Nominal Psat 55% Maximum PAE 8.7 db Nominal Power Gain Bias: Vd = 28-35 V, Idq = 1 A, Vg = -3.6 V Typical Technology:
Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power: dbm @ % PAE
TGA2567-SM 2 20 GHz LNA Amplifier
Product Description Qorvo s is a LNA Gain Block fabricated on Qorvo s proven.um phemt production process. The operates from 2 to 2 GHz and typically provides 19 dbm of 1dB compressed output power with
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
Gb/s Optical Modulator Driver TGA4954-SL
9.9-12.5 Gb/s Optical Modulator Driver Key Features and Performance Product Description The TriQuint is part of a series of surface mount modulator drivers suitable for a variety of driver applications
23-29 GHz High Power Amplifier TGA9070-SCC
23-29 GHz High Power Amplifier TGA9070-SCC Description The TriQuint TGA9070-SCC is a three stage HPA MMIC design using TriQuint s proven 0.25 um Power phemt process to support a variety of millimeter wave
TGA FL 2.5 to 6 GHz 40W GaN Power Amplifier
Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Functional Block Diagram Frequency Range: 2.5 to 6 GHz PSAT: 46.5 dbm @ PIN = 26dBm, CW PAE: 36% Small
TGA2612-SM 6 12 GHz GaN LNA
Product Description Qorvo s is a packaged broadband Low Noise Amplifier fabricated on Qorvo s QGaN 0.um GaN on SiC process. Covering 6, the TGA2612- SM typically provides >23 dm small signal gain, 19 dbm
TGF um Discrete GaAs phemt
Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 20 GHz 29.5 dbm Typical Output Power
QPA GHz GaAs Low Noise Amplifier
General Description Qorvo s QPA9 is a packaged, high-performance, low noise amplifier fabricated on Qorvo s production 9 nm phemt (QPHT9) process. Covering 7 GHz, the QPA9 provides db small signal gain
TGA4548S2. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information GHz 10 W GaN Power Amplifier
17-2 GHz 1 W GaN Power Amplifier Product Overview Qorvo s is a high frequency, high power MMIC amplifier fabricated on Qorvo s production.1um GaN on SiC process (QGaN1). The operates from 17 2 GHz and
TGA2760-SM GHz Power Amplifier
Applications Point-to-Point Radio -Lead 8.0 x.0 x 2 mm Package Product Features Functional Block Diagram Frequency Range: 9.5 12 GHz Power: +42 dbm Psat Gain: 33 db Integrated Power Detector Bias: V D1
GHz Packaged HPA. GaAs Monolithic Microwave IC in SMD leadless package. Output power (dbm)
Output power (dbm) G Description GaAs Monolithic Microwave IC in SMD leadless package The is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a
Features. = +25 C, Vdd = 5V, Vgg1 = Vgg2 = Open
v3.117 HMC441LM1 Typical Applications The HMC441LM1 is a medium PA for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram Vgg1, Vgg2:
Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
![Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]](/thumbs/88/115381636.jpg "Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]")
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The HMC82LP4E is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power:
MMA GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 1 2 3 4 5 32 31 30 29 28 27 26 25 24
GHz Power Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. Pout (dbm)
Pout (dbm) PAE at 1dB comp. ( %) YYWWG A3667A A3688A UMS YWWG A3667A A3688A UMS CHA6552-QJG Description GaAs Monolithic Microwave IC in SMD leadless package The CHA6552-QJG is a three stage monolithic
T1G FS 30W, 28V, DC 6 GHz, GaN RF Power Transistor
Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power
MMA C3 6-22GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vdd=5V P3dB: 19.5 dbm @Vdd=5V Gain: 14 db Vdd =3 to 6 V Ids = 130 ma Input and Output Fully Matched to 50 Ω Applications: Communication systems Microwave
Features. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm
v1.314 Typical Applications Features The is ideal for: Test Instrumentation Microwave Radio & VSAT Telecom Infrastructure Military & Space Fiber optics Functional Diagram P1dB Output Power: +27 dbm Psat
QPD W, 28V, GHz, GaN RF Input-Matched Transistor
Product Overview The Qorvo is a W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance,
OBSOLETE HMC5846LS6 AMPLIFIERS - LINEAR & POWER - SMT. Electrical Specifications, T A. Features. Typical Applications. General Description
v1.414 Typical Applications The HMC846LS6 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram Electrical Specifications, T A = +2 C Vdd = Vdd1,
T2G Q3 10W, 28V DC 6 GHz, GaN RF Power Transistor
Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power
4W CW, MHz Power Transistor
4W CW, 30-2700 Power Transistor FEATURES Frequency: 30-2700 Gain @ 900Mhz: 16.5dB Psat @ 900: 37dBm PAE @ Psat: 47% @ 900 15-28V Operation DESCRIPTION The is a broadband capable 4W GaN on Silicon power
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.414 Typical Applications The HMC5846LS6
8 11 GHz 1 Watt Power Amplifier
Rev. 1.1 December 2 GHz 1 Watt Power Amplifier Features Frequency Range : GHz 3 dbm output P1dB. db Power gain 3% PAE High IP3 Input Return Loss > db Output Return Loss > db Dual bias operation No external
AMGP GHz 4W Power Amplifier Preliminary Data Sheet Feb Package Diagram
AMGP6434 28-31GHz 4W Power Amplifier Preliminary Data Sheet Feb 211 Description The AMGP-6434 MMIC is a 4-Watt power amplifier in a surface mount package designed for use in transmitters that operate at
MMA M GHz, 1W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 37-41 GHz P1dB: +30.5 dbm IM3 Level: -41 dbc @Po=18dBm/tone Gain: 22 db Vdd = 4 to 6 V Idsq = 1000 to 2000 ma Input and Output Fully Matched to 50 Ω Integrated power detector
Data Sheet AMMC KHz 80 GHz TWA. Description. Features. Typical Performance (Vd=5V, Idsq=0.1A) Component Image.
AMMC-525 3KHz 8 GHz TWA Data Sheet Description The AMMC-525 MMIC is a 3KHz to 8GHz ultra broadband traveling wave amplifier. In this operational frequency band, AMMC-525 provides 8dB gain with better than
MMA M GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN
TGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier
Applications Radar Product Features Frequency Range: 3.1 3.6 GHz Pout: 5 dbm (at PIN = 27 dbm) Power Gain: 23 db (at PIN = 27 dbm) PAE: 51 % CW Bias: VD = pulsed (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG
Features. = +25 C, Vdd = 5V, Idd = 85 ma*
Typical Applications The is an ideal gain block or driver amplifi er for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Functional Diagram Features Saturated Power: +23 dbm @ 27% PAE Gain: db
XP1080-QU-EV1. Power Amplifier GHz. Functional Schematic. Features. Description. Pin Configuration 1. Ordering Information. Rev.
2 3 4 5 6 7 8 16 15 14 13 12 11 10 Features Linear On-Chip Power Detector Output Power Adjust 25.0 db Small Signal Gain +27.0 dbm P1dB Compression Point +38.0 dbm OIP3 Lead-Free 7 mm 28-lead SMD Package