QPD W, 28V, GHz, GaN RF Input-Matched Transistor
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1 Product Overview The Qorvo is a W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram Key Features 5 x 6 x 1.09 mm QFN Frequency: 30 MHz to 1.2 GHz Output Power (P3dB) 1 : 24 W Linear Gain 1 : db Typical PAE3dB 1 : 78.2% Operating Voltage: 28 V Low thermal resistance package CW and Pulse capable 5 x 6 mm package Note 1 GHz Applications Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering info Part No. ECCN Description EAR GHz RF Transistor PCB401 EAR GHz EVB PCB402 EAR GHz EVB Datasheet Rev. A, June 23, Subject to change without notice - 1 of
2 Absolute Maximum Ratings 1 Parameter Rating Units Breakdown Voltage,BVDG +0 V Gate Voltage Range, VG -7 to +1.5 V Drain Current 3 A Gate Current Range, IG See page 4. ma Power Dissipation, CW, PDISS 32.4 W RF Input Power, CW, 1 GHz, T = 25 C +30 dbm Channel Temperature, TCH 275 C Mounting Temperature (30 Seconds) 3 C Storage Temperature 65 to +0 C 1. Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions 1 Parameter Min Typ Max Units Operating Temp. Range C Drain Voltage Range, VD V Drain Bias Current, IDQ 50 ma Drain Current, ID 8 ma Gate Voltage, VG V Channel Temperature (TCH) 5 C Power Dissipation, CW (PD) 2 26 W Power Dissipation, Pulsed (PD) 2, W 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package base at 85 C 3. Pulse Width = 557 us, Duty Cycle = % 4. To be adjusted to desired IDQ Pulsed Characterization Load-Pull Performance Power Tuned 1 Parameters Typical Values Unit Frequency, F GHz Linear Gain, GLIN db Output Power at 3dB compression point, P3dB dbm Power-Added-Efficiency at 3dB compression point, PAE3dB % Gain at 3dB compression point db 1. Test conditions unless otherwise noted: VD = +28 V, IDQ = 50 ma, Temp = +25 C Pulsed Characterization Load-Pull Performance Efficiency Tuned 1 Parameters Typical Values Unit Frequency, F GHz Linear Gain, GLIN db Output Power at 3dB compression point, P3dB dbm Power-Added-Efficiency at 3dB compression point, PAE3dB % Gain at 3dB compression point, db G3dB 1. Test conditions unless otherwise noted: VD = +28 V, IDQ = 50 ma, Temp = +25 C Datasheet Rev. A, June 23, Subject to change without notice - 2 of
3 RF Characterization GHz EVB Performance At 0.2 GHz 1 Parameter Min Typ Max Units Linear Gain, GLIN 21.2 db Output Power at 3dB compression point, P3dB 40.7 dbm Power-Added Efficiency at 3dB compression point, 83.9 % PAE3dB Gain at 3dB compression point, G3dB.2 db 1. VD = +28 V, IDQ = 50 ma, Temp = +25 C, CW RF Characterization GHz EVB Performance At 0.5 GHz 1 Parameter Min Typ Max Units Linear Gain, GLIN.5 db Output Power at 3dB compression point, P3dB 42.6 dbm Power-Added Efficiency at 3dB compression point, 68.5 % PAE3dB Gain at 3dB compression point, G3dB.5 db 1. VD = +28 V, IDQ = 50 ma, Temp = +25 C, CW RF Characterization GHz EVB Performance At 0.9 GHz 1 Parameter Min Typ Max Units Linear Gain, GLIN.3 db Output Power at 3dB compression point, P3dB 43.3 dbm Power-Added Efficiency at 3dB compression point, 73.8 % PAE3dB Gain at 3dB compression point, G3dB.3 db 1. VD = +28 V, IDQ = 50 ma, Temp = +25 C, CW RF Characterization Mismatch Ruggedness at 1 GHz 1 Symbol Parameter db Compression Typical VSWR Impedance Mismatch Ruggedness 1 :1 1. Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 50 ma, CW Driving input power is determined at CW compression under matched condition at EVB output connector. Datasheet Rev. A, June 23, Subject to change without notice - 3 of
4 RF Maximum Characterization Gate Current GHz EVB Performance At 0.4 GHz 1 Parameter Min Typ Max Units Linear Gain, GLIN I Gmax vs. T CH db Output Power 35 at 3dB compression point, P3dB 42.5 dbm Drain Efficiency at 3dB compression point, DEFF3dB 78.8 % Gain at 3dB compression point, G3dB db VD = +28 V, IDQ = 50 ma, Temp = +25 C, CW 25 I Gmax [ma] T CH [ C] Datasheet Rev. A, June 23, Subject to change without notice - 4 of
5 Median Lifetime 1 Median Lifetime, T M (Hours) 1.00E+ 1.00E+ 1.00E+ 1.00E+ 1.00E+ 1.00E+ 1.00E+ 1.00E E+ 1.00E E E E E E+04 Median Lifetime vs. Channel Temperature Channel Temperature, T CH ( C) 1. For pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle. Datasheet Rev. A, June 23, Subject to change without notice - 5 of
6 Thermal and Reliability Information Pulsed Maximum Channel Temperature [ o C] % Duty Cycle % Duty Cycle % Duty Cycle 50% Duty Cycle Maximum Channel Temperature QFN base fixed at 85 o C, Pdiss = 28.8W E E E E E-02 Pulse Width [Sec] Parameter Conditions Values Units Thermal Resistance (θjc) 3.09 C/W 85 C back side temperature Maximum Channel Temperature (TCH) 4 C 28.8 W Pdiss, 0 us PW, 5% DC Median Lifetime I 3.7E9 Hrs Thermal Resistance (θjc) 3. C/W 85 C back side temperature Maximum Channel Temperature (TCH) 7 C 28.8 W Pdiss, 0 us PW, % DC Median Lifetime I 1.4E9 Hrs Thermal Resistance (θjc) 3.40 C/W 85 C back side temperature Maximum Channel Temperature (TCH) 3 C 28.8 W Pdiss, 0 us PW, % DC Median Lifetime I 3.9E8 Hrs Thermal Resistance (θjc) 4. C/W 85 C back side temperature Maximum Channel Temperature (TCH) 3 C 28.8 W Pdiss, 0 us PW, 50% DC Median Lifetime I 2.4E7 Hrs Datasheet Rev. A, June 23, Subject to change without notice - 6 of
7 Thermal and Reliability Information CW Temperature [ C] Max Channel Temperature vs. CW Power Surface of QFN Package Fixed at 85 C Maximum Channel Temperature 1E6 Hours Operating Limit CW Power Dissipation [W] Parameter Conditions Values Units Thermal Resistance (θjc) 4.44 C/W 85 C back side temperature Maximum Channel Temperature (TCH) 1 C 7.2 W Pdiss, CW Median Lifetime I 1.4E11 Hrs Thermal Resistance (θjc) 4.72 C/W 85 C back side temperature Maximum Channel Temperature (TCH) 3 C.4 W Pdiss, CW Median Lifetime I 1.8E9 Hrs Thermal Resistance (θjc) 5.05 C/W 85 C back side temperature Maximum Channel Temperature (TCH) 4 C 21.6 W Pdiss, CW Median Lifetime I 2.7E7 Hrs Thermal Resistance (θjc) 5.56 C/W 85 C back side temperature Maximum Channel Temperature (TCH) 245 C 28.8 W Pdiss, CW Median Lifetime I 3.8E5 Hrs Thermal Resistance (θjc) 6.06 C/W 85 C back side temperature Maximum Channel Temperature (TCH) 303 C 36 W Pdiss, CW Median Lifetime I 7.0E3 Hrs Datasheet Rev. A, June 23, Subject to change without notice - 7 of
8 1, 2, 3 Load-Pull Smith Charts 1. VD = 28 V, IDQ = 50 ma, 0 us PW, % DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page for load-pull and source-pull reference planes. 50-Ω load-pull TRL fixtures are built with -mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 0.6 GHz, Load Pull Zs(fo) = iΩ Zs(2fo) = iΩ Zs(3fo) = NaNΩ Zl(2fo) = iΩ Zl(3fo) = NaNΩ Max Power is 43.7dBm at Z = iΩ Γ = i Perfect input match at Zs = iΩ Max Gain is.5db at Z = iΩ Γ = i Perfect input match at Zs = iΩ Max PAE is 72.4% at Z = iΩ Γ = i Perfect input match at Zs = iΩ Zo = 50Ω Power Gain PAE Datasheet Rev. A, June 23, Subject to change without notice - 8 of
9 1, 2, 3 Load-Pull Smith Charts 1. VD = 28 V, IDQ = 50 ma, 0 us PW, % DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page for load-pull and source-pull reference planes. 50-Ω load-pull TRL fixtures are built with -mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 0.8 GHz, Load Pull Zs(fo) = iΩ Zs(2fo) = iΩ Zs(3fo) = NaNΩ Zl(2fo) = iΩ Zl(3fo) = NaNΩ 0.4 Max Power is 43.8dBm at Z = iΩ Γ = i Perfect input match at Zs = iΩ Max Gain is.3db at Z = iΩ Γ = i Perfect input match at Zs = iΩ Max PAE is 74.6% at Z = iΩ Γ = i Perfect input match at Zs = iΩ Zo = 50Ω Power Gain PAE Datasheet Rev. A, June 23, Subject to change without notice - 9 of
10 1, 2, 3 Load-Pull Smith Charts 1. VD = 28 V, IDQ = 50 ma, 0 us PW, % DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page for load-pull and source-pull reference planes. 50-Ω load-pull TRL fixtures are built with -mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 1 GHz, Load Pull Zs(fo) = iΩ Zs(2fo) = iΩ Zs(3fo) = NaNΩ Zl(2fo) = iΩ Zl(3fo) = NaNΩ 0.4 Max Power is 43.8dBm at Z = iΩ Γ = i Perfect input match at Zs = iΩ Max Gain is.8db at Z = iΩ Γ = i Perfect input match at Zs = iΩ Max PAE is 78.2% at Z = iΩ Γ = i Perfect input match at Zs = iΩ Zo = 50Ω Power Gain PAE Datasheet Rev. A, June 23, Subject to change without notice - of
11 1, 2, 3 Load-Pull Smith Charts 1. VD = 28 V, IDQ = 50 ma, 0 us PW, % DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page for load-pull and source-pull reference planes. 50-Ω load-pull TRL fixtures are built with -mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 1.2 GHz, Load Pull Zs(fo) = iΩ Zs(2fo) = iΩ Zs(3fo) = NaNΩ Zl(2fo) = iΩ Zl(3fo) = NaNΩ 0.4 Max Power is 43.8dBm at Z = iΩ Γ = i Perfect input match at Zs = iΩ Max Gain is.7db at Z = iΩ Γ = i Perfect input match at Zs = iΩ Max PAE is 71.1% at Z = iΩ Γ = i Perfect input match at Zs = iΩ Zo = 50Ω Power Gain PAE Datasheet Rev. A, June 23, Subject to change without notice - 11 of
12 Typical Performance Load-Pull Drive-up 1, us PW, % DC pulsed signal, VD = 28 V, IDQ = 50 ma 2. See page for load-pull and source-pull reference planes where the performance was measured. Gain [db] Gain and PAE vs. Output Power 0.6 GHz, Power Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] Gain and PAE vs. Output Power 0.6 GHz, Efficiency Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] Gain and PAE vs. Output Power 0.8 GHz, Power Tuned Zs = iΩ Zl =.67+6.iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] Gain and PAE vs. Output Power 0.8 GHz, Efficiency Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Datasheet Rev. A, June 23, Subject to change without notice - of
13 Typical Performance Load-Pull Drive-up 1, us PW, % DC pulsed signal, VD = 28 V, IDQ = 50 ma 2. See page for load-pull and source-pull reference planes where the performance was measured. Gain [db] 21 Gain and PAE vs. Output Power 1 GHz, Power Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] 21 Gain and PAE vs. Output Power 1 GHz, Efficiency Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] 11 Gain and PAE vs. Output Power 1.2 GHz, Power Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] 11 Gain and PAE vs. Output Power 1.2 GHz, Efficiency Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Datasheet Rev. A, June 23, Subject to change without notice - of
14 Power Drive-up Performance Over Temperatures Of GHz EVB 1 1. VD = 28 V, IDQ = 50 ma, CW P3dB [W] C - C 0 C 25 C 45 C 65 C 85 C P3dB Over Temperatures Frequency [GHz] G3dB [W] G3dB Over Temperatures -40 C - C 0 C 25 C 45 C 65 C 85 C Frequency [GHz] PAE3dB [%] PAE3dB Over Temperatures -40 C - C 0 C 25 C 45 C 65 C 85 C Frequency [GHz] Pdiss3dB [W] Dissipation 3dB Compression Over Temperatures -40 C - C 0 C 25 C 45 C 65 C 85 C CW limit Frequency [GHz] Datasheet Rev. A, June 23, Subject to change without notice - of
15 Power Drive-up Performance At 25 C Of GHz EVB 1 1. VD = 28 V, IDQ = 50 ma, CW P3dB [W] P3dB at 25 C Frequency [GHz] G3dB [db] G3dB at 25 C Frequency [GHz] 0 PAE3dB at 25 C Dissipation 3dB compression at 25 C PAE3dB [%] Pdiss3dB [W] Frequency [GHz] Frequency [GHz] Datasheet Rev. A, June 23, Subject to change without notice - of
16 Two-Tone Performance At 25 C Of GHz EVB Lower IM3, 50 ma Lower IM3, 2 ma Lower IM3, 2 ma Upper IM3, 88 ma Upper IM3, 6 ma IMD3 vs. Output PEP vs I DQ, V D = 28 V, F center = 450 MHz, Tone Spacing = 1 MHz Lower IM3, 88 ma Lower IM3, 6 ma Upper IM3, 50 ma Upper IM3, 2 ma Upper IM3, 2 ma -25 IMD3 [dbc] PEP [dbm] Lower IM5, 50 ma Lower IM5, 2 ma Lower IM5, 2 ma Upper IM5, 88 ma Upper IM5, 6 ma IMD5 vs. Output PEP vs I DQ, V D = 28 V, F center = 450 MHz, Tone Spacing = 1 MHz Lower IM5, 88 ma Lower IM5, 6 ma Upper IM5, 50 ma Upper IM5, 2 ma Upper IM5, 2 ma -30 IMD5 [dbc] PEP [dbm] Datasheet Rev. A, June 23, Subject to change without notice - of
17 Two-Tone Performance At 25 C Of GHz EVB - IMD vs. Tone Spacing, V D = 28 V, I DQ = 2 ma, F center = 450 MHz, PEP = 40.8 dbm Lower IM3 Upper IM3 - Lower IM5 Upper IM5 - IMD [dbc] Tone Spacing [MHz] Datasheet Rev. A, June 23, Subject to change without notice - of
18 Power Drive-up Performance At 25 C Of GHz EVB 1 1. VD = 28 V, IDQ = 50 ma, CW P3dB [W] P3dB vs. Frequency at 25 C Frequency [GHz] G3dB [db] G3dB vs. Frequency at 25 C Frequency [GHz] 0 PAE3dB vs. Frequency at 25 C Dissipation 3dB compression vs. Frequency at 25 C PAE3dB [%] Frequency [GHz] Pdiss3dB [W] Frequency [GHz] Datasheet Rev. A, June 23, Subject to change without notice - of
19 Pin Configuration and Description 1 1. The will be marked with the 00 designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number. Pin Description Pin Symbol Description 2, 3 RF IN Gate voltage / RF Input 6, 7 VD / RF OUT Drain voltage / RF Output 1 VGQ Gate bias supply 4, 5, 8 N/C Not connected 9 Source Source to be connected to ground Datasheet Rev. A, June 23, Subject to change without notice - of
20 Package Marking and Dimensions 1 1. All dimensions are in mm. Otherwise noted, the tolerance is ±0.1 mm. Datasheet Rev. A, June 23, Subject to change without notice - of
21 Schematic GHz EVB Bias-up Procedure Bias-down Procedure 1. Set V G to -4 V. 1. Turn off RF signal. 2. Set I D current limit to 60 ma. 2. Turn off V D 3. Apply 28 V V D. 3. Wait 2 seconds to allow drain capacitor to discharge 4. Slowly adjust V G until I D is set to 50 ma. 4. Turn off V G 5. Set I D current limit to 2 A 6. Apply RF. Datasheet Rev. A, June 23, Subject to change without notice - 21 of
22 Schematic GHz EVB Bias-up Procedure Bias-down Procedure 2. Set V G to -4 V. 3. Turn off RF signal. 4. Set I D current limit to 60 ma. 4. Turn off V D 5. Apply 28 V V D. 5. Wait 2 seconds to allow drain capacitor to discharge 6. Slowly adjust V G until I D is set to 50 ma. 7. Turn off V G 8. Set I D current limit to 2 A 9. Apply RF. Datasheet Rev. A, June 23, Subject to change without notice - of
23 GHz Reference Design 1. PCB Material: RO4350B, mil thickness, 1 oz copper cladding Bill Of material GHz EVB Ref Des Value Qty Manufacturer Part Number R1 Ω 1 Vishay CRCW0603R0JNEA C2 nf 1 AVX 0603YC3KAT2A C3 uf 1 Murata GRM21BR71A6KE51L C4 7.5 pf 1 ATC 600S7R5BT250XT C1, C pf 2 Dielectric Labs C08BL242X-5UN-X0T C5 3.3 pf 1 ATC 600S3R3BT250XT C7 4.7 uf 1 Murata GRM55ER72A475KA01L L1 900 nh 1 Coilcraft 08AF-901XJLC L2 3.9 nh 1 Coilcraft 0603HC-3N9XGLW L3 7.5 nh 1 Coilcraft 0603HC-7N5XGLW L4 00 nh 1 Coilcraft 0603LS-2XGLC Datasheet Rev. A, June 23, Subject to change without notice - 23 of
24 0. 1. GHz Reference Design 1. PCB Material: RO4350B, mil thickness, 1 oz copper cladding Bill Of material GHz EVB Ref Des Value Qty Manufacturer Part Number C2 nf 1 AVX 0603YC3KAT2A C3 uf 1 Murata GRM21BR71A6KE51L C4 3.3 pf 1 ATC 600S3R3AT250XT C1, C pf 2 Dielectric Labs C08BL242X-5UN-X0T C5 4.7 uf 1 Murata GRM55ER72A475KA01L L2 3.9 nh 1 Coilcraft 0603HC-3N9XGLW L3 900 nh 1 Coilcraft 08AF-901XJLC L1 00 nh 1 Coilcraft 0603LS-2XGLC Datasheet Rev. A, June 23, Subject to change without notice - 24 of
25 Recommended Solder Temperature Profile Datasheet Rev. A, June 23, Subject to change without notice - 25 of
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Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
TGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
TGA94-HM Product Description Qorvo s TGA94-HM is a packaged power amplifier fabricated on Qorvo s. um GaN on SiC process (QGaN). Operating from 27 to 31 GHz, the TGA94- HM achieves 36.5 dbm saturated output
QPM GHz Limiter/Low-Noise Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
QPM1 Product Description The Qorvo QPM1 is an integrated limiter/lna providing robust, high performance over the 2 2GHz frequency range. The QPM1 delivers 17 db small signal gain with gain control and
TGA2214-CP 2 18 GHz 4 W GaN Power Amplifier
Product Description Qorvo s TGA2214-CP is a packaged wideband power amplifier fabricated on Qorvo s QGaN15 0.15 µm GaN on SiC process. Operating from 2 to 18 GHz, the TGA2214- CP generates > 4 W saturated
TGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
TGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier
Applications Radar Product Features Frequency Range: 3.1 3.6 GHz Pout: 5 dbm (at PIN = 27 dbm) Power Gain: 23 db (at PIN = 27 dbm) PAE: 51 % CW Bias: VD = pulsed (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG
TGA2567-SM 2 20 GHz LNA Amplifier
Product Description Qorvo s is a LNA Gain Block fabricated on Qorvo s proven.um phemt production process. The operates from 2 to 2 GHz and typically provides 19 dbm of 1dB compressed output power with
TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier
2 to, W GaN Power Amplifier Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal
QPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
0.15 2.8 GHz High Power GaN SP3T Switch Product Overview Qorvo s is a Single-Pole, Triple Throw (SP3T) switch fabricated on Qorvo s QGaN25 5um GaN on SiC production process. Operating from 0.15 to 2.8
TGA3503-SM 2-30 GHz GaAs Wideband Gain Block
Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range: 2 3 GHz
TGA2622-CP 9 10 GHz 35 W GaN Power Amplifier
9 1 GHz W GaN Power Amplifier Applications Weather and Marine Radar Product Features Frequency Range: 9 1 GHz PSAT:.5 dbm @ PIN = 18 dbm PAE: >% @ PIN = 18 dbm Power Gain: 27.5 db @ PIN = 18 dbm Bias:
QPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
.15 2.8 GHz 5 W GaN SPDT Switch Product Overview Qorvo s is a Single-Pole, Double Throw (SPDT) switch fabricated on Qorvo s QGaN25.25um GaN on SiC production process. Operating from.15 to 2.8 GHz, the
TGA2701-SM 3 Watt C-Band Packaged Power Amplifier Key Features Measured Performance Primary Applications Product Description
3 Watt C-Band Packaged Power Amplifier Key Features Frequency Range: 5.9 8.5 GHz Power: 35 dbm Psat, 34 dbm P1dB Gain: 18 db TOI: 42 dbm PAE: 37% NF: 7.5 db Bias: Vd = 6 V, Id = 1.0 A, Vg = -0.6 V Typical
TGA3504-SM 2-30 GHz GaAs Wideband Gain Block
TGA54-SM Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range:
QPA1019S GHz 10W GaN Power Amplifier
QPA119 4.5 7. GHz 1 W GaN Power Amplifier Product Overview Qorvo s QPA119 is a packaged high-power, C-band amplifier fabricated on Qorvo s production.15 um GaN on SiC process (QGaN15). Covering 4.5 7.
TGA2612-SM 6 12 GHz GaN LNA
Product Description Qorvo s is a packaged broadband Low Noise Amplifier fabricated on Qorvo s QGaN 0.um GaN on SiC process. Covering 6, the TGA2612- SM typically provides >23 dm small signal gain, 19 dbm
QPA1003D. 1 8 GHz 10 W GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
Product Description Qorvo s is a wideband high power MMIC amplifier fabricated on Qorvo s production.15um GaN on SiC process (QGaN15). The operates from 1 8 GHz and typically provides W saturated output
TGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
TGA2625-CP GHz 20 W GaN Power Amplifier
Product Description Qorvo s is a packaged high-power X-Band amplifier fabricated on Qorvo s QGaN25 0.25 um GaN on SiC process. Operating from 10 to 11 GHz, the TGA2625- CP achieves 42.5 dbm saturated output
TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier
Applications Radar Product Features Frequency Range:.1. GHz Pout: 9 dbm at PIN = 7 dbm PAE: 5 % Pulsed Power Gain: db at PIN = 7 dbm Bias: VD = V, IDQ = ma, VG = - V typical, pulsed (PW = 15 ms, DC = %)
QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information. Part No.
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
TGA2710-SM 8W GHz Power Amplifier
Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9.5-11.5 GHz Saturated Output Power: 39 dbm Small
QPD W, DC to 3.6 GHz 48 V GaN RF Power Transistor
Product Description The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture
TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier
TGA78-CP Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal Gain: > db IM3: -
MMA M GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN
TGA2704-SM 8W 9-11 GHz Power Amplifier
Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9 - Saturated Output Power: 39 dbm Small Signal
TGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM
17-35GHz MPA/Multiplier TGA4040SM
Not Recommended for New Designs Advance Product Information 17-35GHz MPA/Multiplier TriQuint Recommends the TGA43-SM or TGA431-SM be used for New Designs Key Features Product Description The TriQuint TG44SM
TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
RF3826TR13. 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz. Features. Applications. Ordering Information RF3826
9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose
TGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM
TGM2543-SM 4-20 GHz Limiter/LNA
TGM243-SM Applications Receiver front end building block Product Features QFN 7x7mm 22L Frequency Range: 4-2 GHz Input Power CW Survivability: 4 W Functional Block Diagram Gain: 17 db Noise Figure: 2 db
QPD W, 48 V GHz GaN RF Power Transistor
Applications W-CDMA / LTE Macrocell Base Station, Band 1 and Band 3 Active Antenna General Purpose Applications 2 Lead NI400 Package Product Features Functional Block Diagram Operating Frequency Range:
QPA GHz Variable Gain Driver Amplifier
QPA8 Product Description Qorvo's QPA8 is an S-band two stage variable gain driver amplifier in a 5x5 mm QFN. The QPA8 operates from 2.7 to 3.8 GHz and provides 31dBm of P1dB output power with 26 db of
TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7-3.7 GHz P SAT :.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db
QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.
Product Description The is a discrete GaN on SiC HEMT which operates from 3.4 3.8 GHz. The device is a single stage matched power amplifier transistor. The can be used in Doherty architecture for the final
TGA2521-SM GHz Linear Driver Amplifier Key Features Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
RFHA1004TR7. 25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz. Features. Applications. Ordering Information. Package: Air-Cavity Cu
25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz The is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, military communication radios and general
MMA GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 1 2 3 4 5 32 31 30 29 28 27 26 25 24
MMA M GHz, 1W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 37-41 GHz P1dB: +30.5 dbm IM3 Level: -41 dbc @Po=18dBm/tone Gain: 22 db Vdd = 4 to 6 V Idsq = 1000 to 2000 ma Input and Output Fully Matched to 50 Ω Integrated power detector
TGA FL 2.5 to 6 GHz 40W GaN Power Amplifier
Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Functional Block Diagram Frequency Range: 2.5 to 6 GHz PSAT: 46.5 dbm @ PIN = 26dBm, CW PAE: 36% Small
Features: Applications: Description: Absolute Maximum Ratings: (Ta= 25 C)* 28-31GHz 2.5W MMIC Power Amplifier Preliminary Data Sheet
Features: Frequency Range: 28-31 GHz P3dB: +34 dbm IM3 Level: -35 dbc @Po=26dBm/tone Gain: 20 db Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω Integrated Output Power Detector
QPD W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz. can deliver PAVG of 36 W at +48 V operation.
MGA HP GHz 12W High Efficiency GaN Power Amplifier Data Sheet
Features: 13 db Gain 41 dbm and LSG 10 db CW OIP3 54 dbm at 34 dbm per tone PAE 46% at 42 dbm Matched Input and Output for Easy Cascade Surface Mount Package with RoHS Compliance Thermal Resistance is
TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
17-24 GHz Linear Driver Amplifier. S11 and S22 (db) -15
Pout (dbm) or OTOI (dbm) S21 (db) S11 and S22 (db) 17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical
QPA W, 28 V, GHz GaN PA Module
Product Description The QPA2705 is an integrated 2-stage Power Amplifier Module designed for Metro Cell Base Station applications with 5 W RMS at the device output. The module is 50 Ω input and output
TGA4548S2. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information GHz 10 W GaN Power Amplifier
17-2 GHz 1 W GaN Power Amplifier Product Overview Qorvo s is a high frequency, high power MMIC amplifier fabricated on Qorvo s production.1um GaN on SiC process (QGaN1). The operates from 17 2 GHz and
17-24 GHz Linear Driver Amplifier. S11 and S22 (db -15. TriQuint Semiconductor: www. triquint.com (972) Fax (972)
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
TGL2767-SM-EVB. 2 31GHz Voltage Variable Attenuator. Product Description. Product Features. Applications Block Diagram. Ordering Information
Product Description The TGL2767 SM is a packaged wideband voltagevariable attenuator using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from 2 31 GHz, the TGL2767 SM offers > 2 db of
14-17 GHz Packaged Doubler with Amplifier. TriQuint Semiconductor: www. triquint.com (972) Fax (972) April 2012 Rev B
14-17 GHz Packaged Doubler with Amplifier Key Features RF Output Frequency Range: 28-34 GHz Input Frequency Range: 14-17 GHz Output Power: 20 dbm Nominal Conversion Gain: 15 db Nominal Input Frequency
MMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
TGA4533-SM K-Band Power Amplifier
Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm L Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: dbm Psat, 31 dbm P1dB Gain: 22 db TOI: 41 dbm at 21 dbm SCL
NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V4P. Features. Functional Schematic.
Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable From 48 V Operation 16 db Gain @ 2.5 GHz 56 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Lead-Free 3x6 mm
TGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V6P. Features. Functional Schematic.
Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable from V Power Operation 16 db Gain @ 2.5 GHz 56% Drain Efficiency @ 2.5 GHz 100% RF Tested Lead-Free 3 x
MMA R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012
Features: Frequency Range: 30KHz 40 GHz P1dB: +22 dbm Vout: 7V p-p @50Ω Gain: 13.5 db Vdd =7 V Ids = 200 ma Input and Output Fully Matched to 50 Ω In 4x4mm QFN package Applications: Fiber optics communication
QPA W, 28 V, GHz GaN PA Module
Product Description The QPA3503 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications with 3 W RMS at the device output covering frequency range from 3.4 to 3.6 GHz. The
MMA M GHz, 2W Power Amplifier Data Sheet
Features: Frequency Range: 12.5 15.5 GHz P1dB: 32 dbm IM3 Level -44dBc @Po=dBm/tone Gain: 23.5 db Vdd =4 to 6 V Ids = 10 to 2500 ma Input and Output Fully Matched to 50 Ω Integrated RF power detector Surface
MMA R GHz 4W MMIC Power Amplifier Data Sheet Old package not recommended for new designs
Old package not recommended for new designs Features: Frequency Range: 28-31 GHz P1dB: +36 dbm IM3 Level: -35 dbc @Po=26dBm/tone Gain: 22 db Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched
TGL2226-SM GHz 6-Bit Digital Attenuator
Product Description Qorvo s TGL2226 SM is a wideband, 6 bit digital attenuator fabricated using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from.1 15 GHz, the TGL2226 SM offers a low
CMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver amplifier housed in a leadless
TGA2601-SM MHz High IP3 Dual phemt. Key Features and Performance. Measured Performance. Primary Applications. Product Description
800-3000 MHz High IP3 Dual phemt Key Features and Performance 800-3000 MHz Frequency Range
MMA GHz, 1W MMIC Power Amplifier Data Sheet March, 2012
Features: Frequency Range: 37 40 GHz P1dB: +30.5 dbm IM3 Level: -40 dbc @Po=18dBm/tone Gain: 22 db Vdd = 5V Idsq = 1000 to 2000 ma Input and Output Fully Matched to 50 Ω Integrated power detector Applications: