QPD MHz, 50 V, 7 W GaN RF Input-Matched Transistor

Transcription

1 Product Overview The Qorvo QPD11 is a W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x mm leadless SMT package that saves real estate of already space-constrained handheld radios. Lead-free and ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram 1 8 Key Features 5 x x 1.09mm Package Frequency: 30 to MHz Output Power (P3dB) 1 : 8. W Linear Gain 1 : 21 db Typical PAE3dB 1 : 0 % Operating Voltage: 50 V CW and Pulse capable Note 1 GHz Load Pull 2 3 Input Matching NW 4 5 Applications Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering info Part No. ECCN Description QPD11EVB01 EAR MHz EVB QPD11S2 EAR99 Pack of 2 QPD11 QPD11SQ EAR99 Pack of 25 QPD11 QPD11SR EAR99 Pack of 0 QPD11 Datasheet Rev. A, March 24, 1 Subject to change without notice - 1 of 25 -

2 Absolute Maximum Ratings 1 Parameter Rating Units Breakdown Voltage,BVDG +145 V Gate Voltage Range, VG -8 to +2 V Drain Current, IDMAX 1.4 A Gate Current Range, IG See page 19. ma Power Dissipation, PDISS W RF Input Power, Pulse, 1.3 GHz, T = 25 C 2 +2 dbm Channel Temperature, TCH 25 C Mounting Temperature (30 Seconds) 3 C Storage Temperature 5 to +150 C 1. Operation of this device outside the parameter ranges given above may cause permanent damage. 2. Pulsed, 0 us PW, % DC Recommended Operating Conditions 1 Parameter Min Typ Max Units Operating Temp. Range C Drain Voltage Range, VD V Drain Bias Current, IDQ ma Drain Current, ID ma Gate Voltage, VG V Channel Temperature (TCH) 250 C Power Dissipation (PD) 2,4 13 W Power Dissipation (PD), CW 2 W 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package base at 85 C 3. To be adjusted to desired IDQ 4. Pulsed, 0 us PW, % DC Measured Load Pull Performance Power Tuned 1 Parameter Typical Values Units Frequency, F GHz Drain Voltage, VD V Drain Bias Current, IDQ ma Output Power at 3dB compression, P3dB dbm Power Added Efficiency at 3dB compression, PAE3dB % Gain at 3dB compression, G3dB db 1. Pulsed, 0 us Pulse Width, % Duty Cycle 2. Characteristic Impedance, Zo = 33.4 Ω. Measured Load Pull Performance Efficiency Tuned 1 Parameter Typical Values Units Frequency, F GHz Drain Voltage, VD V Drain Bias Current, IDQ ma Output Power at 3dB compression, P3dB dbm Power Added Efficiency at 3dB compression, PAE3dB % Gain at 3dB compression, G3dB db 1. Pulsed, 0 us Pulse Width, % Duty Cycle 2. Characteristic Impedance, Zo = 33.4 Ω. Datasheet Rev. A, March 24, 1 Subject to change without notice - 2 of 25 -

3 50 00 MHz EVB 500 MHz Performance 1 Parameter Min Typ Max Units Linear Gain, GLIN 1.8 db Output Power at 3dB compression point, P3dB.2 W Drain Efficiency at 3dB compression point, DEFF3dB 52. % Gain at 3dB compression point, G3dB 14.8 db 1. VD = +50 V, IDQ = ma, Temp = +25 C, CW RF Characterization Mismatch Ruggedness at 00 MHz 1 Symbol Parameter Input Drive Level Typical VSWR Impedance Mismatch Ruggedness 23 dbm :1 1. Test conditions unless otherwise noted: TA = 25 C, VD = 50 V, IDQ = ma, CW Datasheet Rev. A, March 24, 1 Subject to change without notice - 3 of 25 -

4 Measured Load-Pull Smith Charts 1, 2 1. Test Conditions: VD = 50 V, IDQ = ma, 0 us Pulse Width, % Duty Cycle 2. See page 19 for load pull reference planes where the performance was measured. 0.GHz, Load-pull Zs(1fo) = iΩ Max Power is 39.dBm at Z = iΩ Γ = i Max Gain is 18dB at Z = iΩ Γ = i Max PAE is 1.% at Z = iΩ Γ = i Zo = 33.4Ω Power Gain PAE Datasheet Rev. A, March 24, 1 Subject to change without notice - 4 of 25 -

5 Measured Load-Pull Smith Charts 1, 2 1. Test Conditions: VD = 50 V, IDQ = ma, 0 us Pulse Width, % Duty Cycle 2. See page 19 for load pull reference planes where the performance was measured. 0.8GHz, Load-pull Zs(1fo) = iΩ Zs(2fo) = iΩ Max Power is 39.4dBm at Z = iΩ Γ = i Max Gain is 19.dB at Z = iΩ Γ = i Max PAE is 4% at Z = iΩ Γ = i Power 1 Zo = 33.4Ω Gain PAE Datasheet Rev. A, March 24, 1 Subject to change without notice - 5 of 25 -

6 Measured Load-Pull Smith Charts 1, 2 1. Test Conditions: VD = 50 V, IDQ = ma, 0 us Pulse Width, % Duty Cycle 2. See page 19 for load pull reference planes where the performance was measured. 1GHz, Load-pull Zs(1fo) = iΩ. Max Power is 39.4dBm at Z = iΩ Γ = i Max Gain is.9db at Z = iΩ Γ = i Max PAE is 0.1% at Z = iΩ Γ = i Power 8 Gain PAE Zo = 33.4Ω Datasheet Rev. A, March 24, 1 Subject to change without notice - of 25 -

7 Measured Load-Pull Smith Charts 1, 2 1. Test Conditions: VD = 50 V, IDQ = ma, 0 us Pulse Width, % Duty Cycle 2. See page 19 for load pull reference planes where the performance was measured. 1.2GHz, Load-pull Zs(1fo) = iΩ Zs(2fo) = iΩ Max Power is 39.1dBm at Z = iΩ Γ = i Max Gain is.1db at Z = iΩ Γ = i Max PAE is 55.4% at Z = iΩ Γ = i Power Gain PAE Zo = 33.4Ω Datasheet Rev. A, March 24, 1 Subject to change without notice - of 25 -

8 Typical Measured Performance Load-Pull Drive-up 1, 2 1. Test Conditions: VD = 50 V, IDQ = ma, 0 us Pulse Width, % Duty Cycle 2. See page 19 for load-pull and source-pull reference planes where the performance was measured. Gain [db] QPD11 Gain and PAE vs. Output Power 0.GHz, Vds = 50V, Idq = ma, Power Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] QPD11 Gain and PAE vs. Output Power 0.GHz, Vds = 50V, Idq = ma, Efficiency Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] QPD11 Gain and PAE vs. Output Power 0.8GHz, Vds = 50V, Idq = ma, Power Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] QPD11 Gain and PAE vs. Output Power 0.8GHz, Vds = 50V, Idq = ma, Efficiency Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Datasheet Rev. A, March 24, 1 Subject to change without notice - 8 of 25 -

9 Typical Measured Performance Load-Pull Drive-up 1, 2 1. C Test Conditions: VD = 50 V, IDQ = ma, 0 us Pulse Width, % Duty Cycle 2. See page 19 for load-pull and source-pull reference planes where the performance was measured. Gain [db] QPD11 Gain and PAE vs. Output Power 1GHz, Vds = 50V, Idq = ma, Power Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] QPD11 Gain and PAE vs. Output Power 1GHz, Vds = 50V, Idq = ma, Efficiency Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] QPD11 Gain and PAE vs. Output Power 1.2GHz, Vds = 50V, Idq = ma, Power Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] QPD11 Gain and PAE vs. Output Power 1.2GHz, Vds = 50V, Idq = ma, Efficiency Tuned Zs = iΩ Zl = iΩ Gain PAE Output Power [dbm] PAE [%] Datasheet Rev. A, March 24, 1 Subject to change without notice - 9 of 25 -

10 Power Driveup Performance Over Temperatures Of MHz EVB 1, 2 1. Test Conditions: VD = 50 V, IDQ = ma, CW 2. The dissipation power is calculated at EVB level. The device dissipation power is lower due to input and output matching network losses. 9 8 P3dB Over Temperatures -40 C - C 0 C 25 C 45 C 5 C 85 C DEFF3dB Over Temperatures -40 C - C 0 C 25 C 45 C 5 C 85 C P3dB [W] DEFF3dB [%] G3dB Over Temperatures -40 C - C 0 C 25 C 45 C 5 C 85 C Pdiss3dB Over Temperatures -40 C - C 0 C 25 C 45 C 5 C 85 C G3dB [db] Pdiss3dB [W] Datasheet Rev. A, March 24, 1 Subject to change without notice - of 25 -

11 Power Driveup Performance At 25 C Of MHz EVB 1, 2 1. Test Conditions: VD = 50 V, IDQ = ma, CW 2. The dissipation power is calculated at EVB level. The device dissipation power is lower due to input and output matching network losses. 12 P3dB At 25 C 0 DEFF3dB At 25 C 11 5 P3dB [W] DEFF3dB [%] G3dB At 25 C Pdiss3dB At 25 C 1 G3dB [db] Pdiss3dB [W] Datasheet Rev. A, March 24, 1 Subject to change without notice - 11 of 25 -

12 Power Driveup Performance At 25 C Over Drain Voltage Of MHz EVB 1, 2 1. Test Conditions: IDQ = ma, CW 2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching network.. P3dB [W] P3dB Over Drain Voltage Vd = 28V Vd = 3 V Vd = 50 V Deff3dB [%] Deff3dB Over Drain Voltage Vd = 28V Vd = 3 V Vd = 50 V G3dB [db] G3dB Over Drain Voltage Vd = 28V Vd = 3 V Vd = 50 V Pdiss3dB [W] Pdiss3dB Over Drain Voltage, Tamb = 25 C Vd = 28V Vd = 3 V Vd = 50 V Datasheet Rev. A, March 24, 1 Subject to change without notice - 12 of 25 -

13 2-Tone Performance At 25 C Of MHz EVB 1 1. Test Conditions: IDQ = ma, CW QPD11 0 IMD3 vs. PEP (450 MHz, 1 MHz Spacing) 0 IMD5 vs. PEP (450 MHz, 1 MHz Spacing) IMD3 [dbc] mA mA mA 50mA -45 5mA PEP [dbm] IMD5 [dbc] mA -0 15mA 30mA -0 50mA 5mA PEP [dbm] IMD [dbc] IMD vs. Tone Spacing (450 MHz, Idq = 30mA, 5W PEP) IMD3 IMD3 -IMD5 IMD Tone Spacing [MHz] Datasheet Rev. A, March 24, 1 Subject to change without notice - 13 of 25 -

14 S-Parameters At -40 C Of MHz EVB 1, 2 1. Test Conditions: VD = 50 V, IDQ = ma 2. K-factor > 1 indicates unconditional stability 40 S21 0 S11 Magnitude [db] Magnitude [db] Magnitude [db] S Magnitude K-Factor Datasheet Rev. A, March 24, 1 Subject to change without notice - 14 of 25 -

15 Thermal and Reliability Information - CW Temperature [ C] CW QPD11 QPD11 Max Channel Temperature vs. Pdiss Surface of QFN Package Fixed at 85C 1E Hours Operating Limit Dissipation Power [W] Parameter Conditions Values Units Thermal Resistance (θjc) 1.9 C/W 85 C Case Peak Channel Temperature (TCH) 22 C.5 W Pdiss, CW Median Lifetime (TM) 1 3.E5 Hrs Thermal Resistance (θjc) 1.0 C/W 85 C Case Peak Channel Temperature (TCH) 229 C 9.0 W Pdiss, CW Median Lifetime (TM) 1 4.1E Hrs Thermal Resistance (θjc) 15.2 C/W 85 C Case Peak Channel Temperature (TCH) 199 C.5 W Pdiss, CW Median Lifetime (TM) 1 4.E Hrs Thermal Resistance (θjc) 14.5 C/W 85 C Case Peak Channel Temperature (TCH) 12 C.0 W Pdiss, CW Median Lifetime (TM) 1 5.E8 Hrs Thermal Resistance (θjc) 14.0 C/W 85 C Case Peak Channel Temperature (TCH) 148 C 4.5 W Pdiss, CW Median Lifetime (TM) 1.E9 Hrs Datasheet Rev. A, March 24, 1 Subject to change without notice - 15 of 25 -

16 Thermal and Reliability Information - Pulsed Temperature [ C] QPD11 QPD11 Max Channel Temperature vs. Pdiss Surface of QFN Package Fixed at 85C Pulsed at % Duty Cycle 1E Hours Operating Limit Dissipation Power [W] Parameter Conditions Values Units Thermal Resistance (θjc) 12.0 C/W 85 C Case Peak Channel Temperature (TCH) 211 C.5 W Pdiss, 0 us PW, % DC Median Lifetime (TM) 1 1.E8 Hrs Thermal Resistance (θjc) 11.4 C/W 85 C Case Peak Channel Temperature (TCH) 180 C 8.3 W Pdiss, 0 us PW, % DC Median Lifetime (TM) 1 2.E9 Hrs Thermal Resistance (θjc) 11.0 C/W 85 C Case Peak Channel Temperature (TCH) 151 C.0 W Pdiss, 0 us PW, % DC Median Lifetime (TM) 1 4.8E Hrs Thermal Resistance (θjc).3 C/W 85 C Case Peak Channel Temperature (TCH) 11 C 3.0 W Pdiss, 0 us PW, % DC Median Lifetime (TM) 1 2.9E12 Hrs Note 1: Median Lifetime under pulsed condition is that under CW condition divided by duty cycle. Datasheet Rev. A, March 24, 1 Subject to change without notice - 1 of 25 -

17 Median Lifetime E+19 Median Lifetime vs. Channel Temperature 1.00E E+1 Median Lifetime, T M (Hours) 1.00E E E E E E E+ 1.00E E E E E Channel Temperature, T CH ( C) 1. Test Conditions: V D = +50 V; Failure Criteria = % reduction in I D_MAX during DC Life Testing. Datasheet Rev. A, March 24, 1 Subject to change without notice - 1 of 25 -

18 Maximum Gate Current Maximum Gate Current [ma] Maximum Gate Current Vs. Channel Temperature Channel Temperature [ C] Datasheet Rev. A, March 24, 1 Subject to change without notice - 18 of 25 -

19 Pin Configuration and Description 1 Note 1: The QPD11 will be marked with the QPD11 designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number Load-pull Reference Planes Pin Symbol Description 1 VG Gate Voltage 2, 3 RF INPUT Gate, RF OUTPUT / VD Drain 4, 5, 8 NC No connection 9 Source Source / Ground / Backside of part Datasheet Rev. A, March 24, 1 Subject to change without notice - 19 of 25 -

20 Mechanical Drawing 1, 2 Note 1. Dimensions are in mm. 2. Dimension tolerance is ± 0.1 mm, unless noted otherwise. Datasheet Rev. A, March 24, 1 Subject to change without notice - of 25 -

21 50 00 MHz Application Circuit - Schematic QPD11 Bias-up Procedure Bias-down Procedure 1. Set V G to -3.5 V. 1. Turn off RF signal. 2. Set I D current limit to 30 ma. 2. Turn off V D 3. Apply 50 V V D. 3. Wait 2 seconds to allow drain capacitor to discharge 4. Slowly adjust V G until I D is set to ma. 4. Turn off V G 5. Set I D current limit to 500 ma (CW operation). Apply RF. Datasheet Rev. A, March 24, 1 Subject to change without notice - 21 of 25 -

22 50 00 MHz Application Circuit - Layout Board material is RO4350B 0.0 thickness with 2oz copper cladding. Overall EVB size is 3.98 x Datasheet Rev. A, March 24, 1 Subject to change without notice - 22 of 25 -

23 50 00 MHz Application Circuit - Bill Of material Description Ref. Des. Manufacturer Part Number CAP, SMT 003nF C2 AVX Corporation 003YC3KAT2A CAP, CER, SMD UF, %, V, 0805, XR CAP MLCC 2400PF TC +/-15% 50V, 0805 C1, C C3 Murata GRM21BR1AKE51L C08BL242X-5UN-X0T CAP CER 4.UF 0V % XR 22 C Murata GRM55ER2A45KA01L CAP, 2.2pF, +/-0.1pF, 250V, Hi-Q, 003 C4 CAP, 3.0pF, +/-0.1pF, 250V, HI-Q, 003 C5 American Technical Ceramics American Technical Ceramics 00S2R2BT250T 00S3R0BT250XT RES OHM 1/W +-5% 003 R1 TTI Inc. CRCW003R0JNEA IND 00nH 003 2% L4 Coilcraft Inc. 003LS-2XGLC IND 900nH 08 5% L1 Coilcraft Inc. 08AF-901XJLC IND,.8nH, 5%, W/W, 003 L5 Coilcraft Inc. 003HC-N8XJLW IND, 12nH, 5%, 003, HC L2, L3 Coilcraft Inc. 003HC-12NXGLW Datasheet Rev. A, March 24, 1 Subject to change without notice - 23 of 25 -

24 Recommended Solder Temperature Profile Datasheet Rev. A, March 24, 1 Subject to change without notice - 24 of 25 -

25 Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 1A, 250V ESDA / JEDEC JS ESD Charged Device Model (CDM) TBD JEDEC JESD22-C1F MSL Moisture Sensitivity Level TBD IPC/JEDEC J-STD-0 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (20 C max. reflow temp.) and tin/lead (245 C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: NiPdAu RoHS Compliance This part is compliant with 11/5/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 15/83/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Pb Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: Tel: info-sales@qorvo.com Fax: For technical questions and application information: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 1 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Datasheet Rev. A, March 24, 1 Subject to change without notice - 25 of 25 -