TGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
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1 Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM typically supports up to 100W input power (pulsed) handling at control voltages of 0/ 40 V. This switch maintains low insertion loss of 1.1 db or less and greater than 40 db isolation, making it ideal for high power switching applications across both defense and commercial platforms. The TGS2355 SM is offered in a 5 x 5 mm air-cavity QFN package comprised of an aluminum-nitride base with a LCP epoxy-sealed lid. This, along with the minimal DC power consumption, allows for easy system integration. Lead free and RoHS compliant. Evaluation boards available on request. Functional Block Diagram Key Features 32 Pad 5 x 5 mm QFN Package Frequency Range: GHz Insertion Loss: < 1.1 db Power Handling: 50 dbm (Pulsed) Isolation: 40 db typical. Return Loss: > 15 db Control Voltages: 0 V/ 40 V Switching Speed: < 50 ns Reflective Switch Package Dimensions: 5.0 x 5.0 x 1.42 mm Applications J3, RF2 5 3 V C2 28, 29 J1, RFC Commercial and Military Radar Communications Electronic Warfare Test Instruments General Purpose High Power Switching 20 J2, RF1 22 V C1 Ordering Information Top View Part No. TGS2355 SM TGS2355 SM EVB ECCN Description EAR99 EAR GHz 100 Watt GaN Switch TGS2355 SM Evaluation Board Data Sheet Rev. B, July 18, 2017 Subject to change without notice 1 of 11
2 Absolute Maximum Ratings Parameter Control Voltage (VC) Control Current (IC) Power Dissipation RF Input Power (pulsed, 10% Duty Cycle, 20us pulse width) RF Input Power, CW, 50Ω, T = 85 C Rating 50 V 3.5 / +3.5 ma 35 W 50.5 dbm 47 dbm Channel Temperature, TCH 275 C Mounting Temperature (30 sec) 320 C Storage Temperature 55 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Recommended Operating Conditions Parameter Min Typ Max Units Frequency GHz Input Power Handling (Pulsed) 50 dbm Control Voltage 40 V Channel Temp., Tch 225 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Parameter Conditions (1) Min Typ Max Units Operational Frequency Range GHz P0.1dB Pulsed Input Power 50 dbm Control Current (IC) 1.0 ma Insertion Loss On-State, GHz On-State, 4 6 GHz Input Return Loss On-State Common Port Return Loss 15 db Output Return Loss On-State Switched Port Return Loss 15 db Isolation Off-State 40 db Output Return Loss Off-State (Isolated Port RL) 2.0 db Switching Speed (10%, 90%, VC=V) 50 ns Third Order Intermodulation Distortion (FC=4 GHz) -46 dbc Second Harmonic Level (F0=4 GHz) dbc Control Voltage -48 V Insertion Loss Temperature Coefficient 04 db/ C Notes: 1. Test conditions unless otherwise noted: Temp= +25 C. Z 0 = 50 Ω, Vc = 40 V, parts mounted to EVB (page 6) db Data Sheet Rev. B, July 18, 2017 Subject to change without notice 2 of 11
3 Return Loss (db) S22, S33 (db) S21 (db) S21, S31 (db) S21, S31 (db) S21 (db) Performance Plots Small Signal Test conditions unless otherwise noted: CW RF Input, Temp= +25 C, parts mounted to EVB (page 6) Insertion Loss vs. Frequency Temp.= 25 C Insertion Loss vs. Freq. vs. V C2 VC1 = 0V, RF1 Path On RF1 Path (S21) On RF2 Path (S31) On VC2 = V VC2 = V VC2 = V Insertion Loss vs. Freq. vs. Temp. VC1 = 0V, VC2 = V, RF1 Path ON 0 Isolation vs. Frequency Temp.= 25 C C +25 C +85 C RF2 Path (S31) Off RF1 Path (S21) Off Temp. = 25 C Return Loss vs. Frequency RFC (S11) RF1 Path (S22) On RF2 Path (S33) On Temp. = 25 C Return Loss vs. Frequency RF2 Path (S33) Off RF1 Path (S22) Off Data Sheet Rev. B, July 18, 2017 Subject to change without notice 3 of 11
4 Harmonic Level (dbc) Harmonic Level (dbc) Compression (db) Compression (db) Compression (db) Compression (db) Performance Plots Compression and Harmonics Test conditions unless otherwise noted: parts mounted to EVB (page 9), Pulsed Input Power PW=100 us, DC=10%, T=+25 C Compression vs. Pin vs. Freq. V C1 = 0 V, V C2 = V, Temp. = 25 C 0.1 GHz 0.2 GHz 0.3 GHz 0.4 GHz 0.5 GHz 1.0 GHz Input Power (dbm) Compression vs. Pin vs. Freq. V C1 = 0 V, V C2 = V, Temp. = 25 C 2.0 GHz 3.0 GHz 4.0 GHz 5.2 GHz 6.0 GHz Input Power (dbm) Compression vs. Pin vs. Temp. V C1 = 0 V, V C2 = V, Freq. = 3.0 GHz - 40 C +25 C +85 C Input Power (dbm) Compression vs. Pin vs. V C V C1 = 0 V, Freq. = 3.0 GHz, Temp. = 25 C VC2 = V VC2 = V VC2 = V Input Power (dbm) 0 Harmonic vs. Output Power V C1 = V, V C2 = 0 V, F0 = 3 GHz (CW) 0 Harmonic vs. Output Power V C1 = V, V C2 = 0 V, F0 = 4 GHz (CW) 2*F0 C 3*F0 C 2*F0 25 C 3*F0 25 C 2*F0 85 C 3*F0 85 C 2*F0 C 3*F0 C 2*F0 25 C 3*F0 25 C 2*F0 85 C 3*F0 85 C Output Power (dbm) Output Power (dbm) Data Sheet Rev. B, July 18, 2017 Subject to change without notice 4 of 11
5 IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) Performance Plots Linearity Test conditions unless otherwise noted: CW RF Input, Temp= +25 C, parts mounted to EVB (page 6) IM3 vs. Input Power vs. Frequency Temp. = +25 C, V C1 = V, V C2 = 0V, 100 MHz Tone Spacing IM5 vs. Input Power vs. Frequency Temp. = +25 C, V C1 = V, V C2 = 0V, 100 MHz Tone Spacing Fc=4.0 GHz Fc=4.0 GHz IM3 vs. Input Power vs. Temperature V C1 = V, V C2 = 0V, Freq. = 4.0 GHz, 100 MHz Spacing - 40 C +25 C +85 C IM5 vs. Input Power vs. Temperature V C1 = V, V C2 = 0V, Freq. = 4.0 GHz, 100 MHz Spacing - 40 C +25 C +85 C IM3 vs. Input Power vs. V C1 V C2 = 0V, Freq. = 4.0 GHz, Temp. = +25 C, 10 MHz Spacing V V V IM5 vs. Input Power vs. V C1 V C2 = 0V, Freq. = 4.0 GHz, Temp. = +25 C, 10 MHz Spacing V V V Data Sheet Rev. B, July 18, 2017 Subject to change without notice 5 of 11
6 Tch, max Temperature, C Maximum Channel Temperature ( C) Median Lifetime (Hours) Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) 3.27 ºC/W Channel Temperature (TCH) (1) TBASE = 85 C, VC1 = 0 V, VC2 = V, PIN = 50 W, PDISS = 15 W, CW 134 C Median Lifetime (TM) 1.1E10 Hrs Thermal Resistance (θjc) (1) 2.2 ºC/W Channel Temperature (TCH) (1) TBASE = 85 C, VC1 = 0 V, VC2 = V, PIN = 100 W, PDISS = 25 W, Pulsed Power: PW = 100 us, DC = 10 % 140 C Median Lifetime (TM) 5.43E09 Hrs Notes: 1. MMIC attached to 12 mil AlN QFN base using 0.8 mil thick Diemat 6030 epoxy. Thermal resistance is determined from the channel to the back of the package (fixed 85 C temperature). Median Lifetime and Channel Temperature Test Conditions: VD = +40 V; Failure Criteria is 10% reduction in ID_MAX 1E+18 1E+17 1E+16 1E+15 1E+14 1E+13 1E+12 1E+11 1E+10 1E+09 1E+08 1E+07 1E+06 1E+05 1E+04 FET13 QGaN25 Median Lifetime vs. T CH Channel Temperature ( C) Peak Temperature vs. CW Power 12-mil AlN, 6030HK Die Attach; Pkg base = 85 C Tch,max for 12-mil AlN Pkg Base Recommended Limit for Tch,max RF Input Power, Watts Maximum Channel Temperature 12" AlN with 6030HK, Tbase=85 C, Pin=100 W 10% duty cycle 100 us pulse 5% Duty Cycle 10% Duty Cycle 20% Duty Cycle 50% Duty Cycle E E E E E E E+00 Pulse Width (sec) Data Sheet Rev. B, July 18, 2017 Subject to change without notice 6 of 11
7 Evaluation Board (EVB) and Application Circuit J3, RF2 5 3 V C2 28, 29 J1, RFC 20 J2, RF1 22 Top View V C1 Notes: 1. See Evaluation Board PCB Information for material and stack up. 2. DC blocking capacitors are required on all RF ports. 3. This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused RF switched port with a 50 Ohm load. 4. Tabs (as shown) on RF transmission lines are required to achieve best electrical performance. Function Table RF Path State V C1 V C2 RFC to RF1 (50 Ω load to RF2) On-State (Insertion Loss) 0 V 40 V Off-State (Isolation) 40 V 0 V RFC to RF2 (50 Ω load to RF1) On-State (Insertion Loss) 40 V 0 V Off-State (Isolation) 0 V 40 V Data Sheet Rev. B, July 18, 2017 Subject to change without notice 7 of 11
8 Pad Configuration and Description Pad No. Label Description Bottom View 28, 29 RFC RF common port; matched to 50 Ω; DC coupled 22 VC1 Control voltage 1 3 VC2 Control voltage 2 5 RF2 RF switched port 2; matched to 50 Ω; DC coupled 20 RF1 RF switched port 1; matched to 50 Ω; DC coupled 1-2, 4, 6-19, 21, 23-27, GND Connected to ground paddle (33); must be grounded to PCB to improve isolation. 33 GND Backside paddle. Multiple vias should be employed to minimize inductance and thermal resistance. Evaluation Board PCB Information PC Board Layout PCB Material Stack-up 1.0 oz. Cu Top Layer Finished Board Thickness Rogers RO6202 (20 ) 1.0 oz. Cu Bottom Layer Data Sheet Rev. B, July 18, 2017 Subject to change without notice 8 of 11
9 18X Package Marking and Dimensions Marking: Part Number 2355 Date Code YYWW Lot Code MXXX 5.00 (.305).50 TYP. 32X YYWW MXXX SQ (.100) 5 Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Contact plating: W-Ni-Au Data Sheet Rev. B, July 18, 2017 Subject to change without notice 9 of 11
10 Recommended Soldering Profile Data Sheet Rev. B, July 18, 2017 Subject to change without notice 10 of 11
11 Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 1A ESDA / JEDEC JESD22-A114 ESD Charged Device Model (CDM) Class C3 JEDEC JESD22-C101 MSL Moisture Sensitivity Level Level 3 IPC/JEDEC J-STD-020 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (260 C max. reflow temp.) and tin/lead (245 C max. reflow temp.) soldering processes. Contact plating: W-Ni-Au RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Pb Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: Tel: customer.support@qorvo.com For technical questions and application information: appsupport@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2016 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. B, July 18, 2017 Subject to change without notice 11 of 11
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