QPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

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1 GHz 5 W GaN SPDT Switch Product Overview Qorvo s is a Single-Pole, Double Throw (SPDT) switch fabricated on Qorvo s QGaN25.25um GaN on SiC production process. Operating from.15 to 2.8 GHz, the typically supports 5 W input power handling at control voltages of / 4 V for both CW and pulsed RF operations. This switch maintains low insertion loss less than.7 db and greater than 3 db isolation, making it ideal for high power switching applications across both defense and commercial platforms. is offered in a 4 x 4 mm plastic overmolded QFN package. Lead-free and RoHS compliant Functional Block Diagram Key Features 4mm x 4mm 24 Lead OVM QFN SPDT Frequency Range:.15 to 2.8 GHz Input Power: 5 W Insertion Loss: <.7 db Isolation: >3 db Typical Switching Speed: 3 ns Control Voltages: V/ 4 V Redundant Control Lines Package Dimensions: 4 x 4 x.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications Commercial and Military Radar Land Mobile Radios Military Communications Radios Electronic Warfare Test Instrumentation General Purpose Ordering Information Part No. ECCN Description EAR GHz 5 W GaN SPDT Switch Data Sheet Rev C. February 13, 218 Subject to change without notice 1 of 16

2 Absolute Maximum Ratings Parameter Control Voltage (VC) Control Current (IC) Power Dissipation RF Input Power, CW, 5 Ω, T = 25 C Rating 5 V 1.5 / +1.5 ma 12 W 6 W Channel Temperature, TCH 275 C Mounting Temperature (3 sec) 26 C Storage Temperature 4 to 15 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Recommended Operating Conditions Parameter Min Typ Max Units VC1 / V VC2 / V Channel Temp., TCH 225 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Data Sheet Rev C. February 13, 218 Subject to change without notice 2 of 16

3 Electrical Specifications Test conditions unless otherwise noted: 25 C, VC1 = V/V, VC2 = V/V, see function table on page 12. Parameter Min Typ Max Units Operational Frequency Range GHz Insertion Loss (On-State) Input Return Loss (On-State) Common Port RL Output Return Loss (On-State) Switched Port RL Isolation (Off-State) Output Return Loss Isolated Port Insertion PIN = 47 dbm (Pulsed RF) PW = 1us; DC = 1% Insertion PIN = 47 dbm (CW) Frequency =.15 GHz.3 Frequency = 1. GHz.45 db Frequency = 2.8 GHz.7 Frequency =.15 GHz 37 Frequency = 1. GHz 26 Frequency = 2.8 GHz 18 Frequency =.15 GHz 34 Frequency = 1. GHz 29 Frequency = 2.8 GHz 18 Frequency =.15 GHz 57 Frequency = 1. GHz 4 Frequency = 2.8 GHz 29 Frequency =.15 GHz 2.1 Frequency = 1. GHz 2.3 Frequency = 2.8 GHz 2.2 Frequency =.15 GHz.3 Frequency = 1. GHz.5 Frequency = 2.8 GHz.7 Frequency =.15 GHz.3 Frequency = 1. GHz.5 Frequency = 2.8 GHz.75 Input Power (P.1dB) 47 dbm Control Voltage -5 V Total Supply Current <3 ma Switching Speed 3 ns Insertion Loss Temperature Coefficient -15 db/ C db db db db db db Data Sheet Rev C. February 13, 218 Subject to change without notice 3 of 16

4 S33 (db) Return Loss (db) S22 (db) S31 (db) S21 (db) S11 (db) Performance Plots Small Signal Notes: RFC = Port1; RF1 = Port 2; RF2 = Port 3 Insertion Loss vs. Freq. vs. Temp. RF1 = ON: V C1 = V, V C2 = V IRL (Common Port) vs. Freq. vs. Temp. -5 RF1 = ON: V C1 = V, V C2 = V ORL (Switched Port) vs. Freq. vs. Temp. -5 RF1 = ON: V C1 = V, V C2 = V Isolation vs. Frequency vs. Temperature RF1 = ON: V C1 = V, V C2 = V ORL (Isolated Port) vs. Freq. vs. Temp. RF1 = ON: V C1 = V, V C2 = V 5 5 Insertion Loss RF1 vs. RF2 vs. Frequency RF1 = ON: V C1 = V, V C2 = V RF2 = ON: V C1 = V, V C2 = V Temp. = 25 C RFC Return Loss RF1 & RF2 Return Loss RF1 / IL RF2 / IL RFC1 RFC2 RF1 RF Data Sheet Rev C. February 13, 218 Subject to change without notice 4 of 16

5 S31 (db) S33 (db) S22 (db) S21 (db) S11 (db) Performance Plots Small Signal Insertion Loss vs. Frequency vs V C2 RF1 = ON: V C1 = V, Temp. = 25 C IRL (Common Port) vs. Frequency vs V C2 RF1 = ON: V C1 = V, Temp. = 25 C -1 V -2 V V V V -2 V V V ORL (Switched Port) vs. Frequency vs V C2-5 RF1 = ON: V C1 = V, Temp. = 25 C V -2 V V V Isolation vs. Frequency vs V C2 RF1 = ON: V C1 = V, Temp. = 25 C -1 ORL (Isolated Port) vs. Frequency vs V C2 RF1 = ON: V C1 = V, Temp. = 25 C V -2 V V V -4-1 V -2 V V V Data Sheet Rev C. February 13, 218 Subject to change without notice 5 of 16

6 Gate Current (ma) Gate Current (ma) Gate Current (ma) Performance Plots Compression (Pulsed) RF1: Insertion Loss vs. P IN vs. Temp. V C1 = V, V C2 = V +25C +85C Freq. =.15 GHz Gate Current (I C2 ) vs. P IN vs. Temp Freq. =.15 GHz C +85C.3.2 V C1 = V, V C2 = V.1 RF1: Insertion Loss vs. P IN vs. Temp. V C1 = V, V C2 = V +25C +85C Freq. = 1. GHz Gate Current (I C2 ) vs. P IN vs. Temp V C1 = V, V C2 = V C +85C.2.1 Freq. = 1. GHz RF1: Insertion Loss vs. P IN vs. Temp. V C1 = V, V C2 = V +25C +85C Freq. = 2.8 GHz Gate Current (I C2 ) vs. P IN vs. Temp V C1 = V, V C2 = V C +85C.2.1 Freq. = 2.8 GHz Data Sheet Rev C. February 13, 218 Subject to change without notice 6 of 16

7 Performance Plots Compression (Pulsed) RF1: Insertion Loss vs. P IN vs. Freq. V C1 = V, V C2 = V, Temp. = 25 C.1 GHz.15 GHz.2 GHz.5 GHz 1. GHz 1.5 GHz 2. GHz 2.5 GHz 2.8 GHz RF1: Insertion Loss vs. P IN vs. V C2 V C1 = V, Temp. = 25 C -1V -2V V V -5V Freq. = 1. GHz Insertion Loss: RF1 vs. RF2 vs. P IN RF1 = ON: V C1 = V, V C2 = V RF2 = ON: V C1 = V, V C2 = V Freq. =.15 GHz: RF1 / RF2 Freq. = 1. GHz: RF1 / RF2 Freq. = 2.8 GHz: RF1 / RF2 Temp. = 25 C Data Sheet Rev C. February 13, 218 Subject to change without notice 7 of 16

8 Gate Current (ma) Gate Current (ma) Gate Current (ma) Performance Plots Compression (CW) RF1: Insertion Loss vs. P IN vs. Temp. V C1 = V, V C2 = V, CW Gate Current (I C2 ) vs. P IN vs. Temp. V C1 = V, V C2 = V, CW Freq. =.15 GHz Freq. =.15 GHz.1 RF1: Insertion Loss vs. P IN vs. Temp. V C1 = V, V C2 = V, CW Freq. = 1. GHz Gate Current (I C2 ) vs. P IN vs. Temp V C1 = V, V C2 = V, CW.8 Freq. = 1. GHz RF1: Insertion Loss vs. P IN vs. Temp. V C1 = V, V C2 = V, CW Freq. = 2.8 GHz Gate Current (I C2 ) vs. P IN vs. Temp. V C1 = V, V C2 = V, CW Freq. = 2.8 GHz Data Sheet Rev C. February 13, 218 Subject to change without notice 8 of 16

9 Performance Plots Compression (CW) RF1: Insertion Loss vs. P IN vs. Freq. V C1 = V, V C2 = V, Temp. = 25 C, CW.15 GHz.2 GHz.5 GHz 1. GHz 1.5 GHz 2. GHz 2.5 GHz 2.8 GHz RF1: InsertionLoss vs. P IN vs. V C2 V C1 = V, Temp. = 25 C, CW V V -5V Freq. =.15 GHz RF1: Insertion Loss vs. P IN vs. V C2 V C1 = V, Temp. = 25 C, CW Freq. = 1. GHz V V -5V RF1: Insertion Loss vs. P IN vs. V C2 V C1 = V, Temp. = 25 C, CW Freq. = 2.8 GHz V V -5V Insertion Loss: RF1 vs. RF2 vs. P IN RF1 = ON: V C1 = V, V C2 = V RF2 = ON: V C1 = V, V C2 = V Freq. =.15 GHz: RF1 / RF2 Freq. = 1. GHz: RF1 / RF2 Freq. = 2.8 GHz: RF1 / RF2 Temp. = 25 C, CW Data Sheet Rev C. February 13, 218 Subject to change without notice 9 of 16

10 IMD3 (dbc) IMD3 (dbc) IMD3 (dbc) Performance Plots Linearity RF1: IMD3 vs. P IN vs. Frequency V C1 = V, V C2 = V, Tone Spacing = 1 MHz Temp. = 25 C RF1: IMD3 vs. P IN vs. Temp. V C1 = V, V C2 = V, Tone Spacing = 1 MHz Freq. = 2. GHz GHz 1.5 GHz 2. GHz Input Power per Tone (dbm) Input Power per Tone (dbm) RF1: IMD3 vs. P IN vs. V C2 V C1 = V, Tone Spacing = 1 MHz, Temp. = 25 C Freq. = 2. GHz V V -5V Input Power per Tone (dbm) Data Sheet Rev C. February 13, 218 Subject to change without notice 1 of 16

11 Median Lifetime (Hours) Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) 7.69 ºC/W Channel Temperature (TCH) (1) TBASE = 85 C, VC1 = V, VC2 = V, Freq. = 2.8 GHz PIN = 6 W (CW), PDISS (2) = 6.5 W, CW 135 C Median Lifetime (TM) 9.75 x 1^9 Hrs Notes: 1. Measured to the back of the package. 2. This is a total PDISS in the FETs. Median Lifetime and Channel Temperature Test Conditions: VD = +4 V; Failure Criteria = 1% reduction in ID_MAX during DC Life Testing 1E+18 1E+17 1E+16 1E+15 1E+14 1E+13 1E+12 1E+11 1E+1 1E+9 1E+8 1E+7 1E+6 1E+5 1E+4 FET13 QGaN25 Median Lifetime vs. T CH Channel Temperature ( C) Data Sheet Rev C. February 13, 218 Subject to change without notice 11 of 16

12 Application Circuit Notes: 1. This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused RF switched port with a 5 Ohm load. 2. VC1 can be biased from either pin 7 or 24 and the non-biased pin can be left open. 3. VC2 can be biased from either pin 8 or 23 and the non-biased pin can be left open. 4. External components are not required Bias Up Procedure 1. VC1 or VC2 set to V (see Function Table for RF Path) 2. VC2 or VC1 set to V (see Function Table for RF Path) 3. Apply RF signal to RF Input Bias Up Down 1. Turn off RF supply 2. Turn VC2 or VC1 to V 3. Turn VC1 or VC2 to V Function Table RF Path State V C1 V C2 RFC to RF1 ON On-State (Insertion Loss) V 4 V Off-State (Isolation) 4 V V RFC to RF2 ON On-State (Insertion Loss) 4 V V Off-State (Isolation) V 4 V Data Sheet Rev C. February 13, 218 Subject to change without notice 12 of 16

13 Evaluation Board (EVB) Assembly Layout. 5 Notes: 1. This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused RF switched port with a 5 Ohm load. 2. VC1 can be biased from either pin and the non-biased pin can be left open. 3. VC2 can be biased from either pin and the non-biased pin can be left open. 4. External components are not required Data Sheet Rev C. February 13, 218 Subject to change without notice 13 of 16

14 Mechanical Information Units: millimeters Tolerances: unless specified x.xx = ±.25 x.xxx = ±.1 Materials: Base: Cu Alloy Packaged Exposed Metallization is gold plated Marking: : Part number YY: Part Assembly year WW: Part Assembly week MXXX: Batch ID Pin Description Pad No. Symbol Description 1, 5, 6, 11-2, N/C Not connected internally. Recommended to be grounded at EVB level 2, 4, 9, 22 GND Ground. Connected to GND paddle (pin 25); should be grounded on PCB to improve isolation 3 RFC RF common port; matched to 5 Ω; DC coupled 7, 24 VC1 Control voltage #1; External components are not required 8, 23 VC2 Control voltage #2; External components are not required 1 RF1 RF switched port 1; matched to 5 Ω; DC coupled 21 RF2 RF switched port 2; matched to 5 Ω; DC coupled 25 GND Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance. Data Sheet Rev C. February 13, 218 Subject to change without notice 14 of 16

15 Recommended Soldering Profile Data Sheet Rev C. February 13, 218 Subject to change without notice 15 of 16

16 Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 1A ESDA / JEDEC JS ESD Charged Device Model (CDM) TBD ESDA / JEDEC JS MSL Convection Reflow 26 C Level 3 Solderability JEDEC standard IPC/JEDEC J-STD-2 Caution! ESD-Sensitive Device Compatible with the latest version of J-STD-2, Lead-free solder, 26 C RoHS Compliance This part is compliant with 211/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 215/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br42) Free PFOS Free SVHC Free Pb Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: Tel: customer.support@qorvo.com For technical questions and application information: appsupport@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 218 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev C. February 13, 218 Subject to change without notice 16 of 16

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