QPD W, 32V, DC 12 GHz, GaN RF Transistor
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- Maximilian Jefferson
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1 General Description The Qorvo is a W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the makes it suitable for many different applications from DC to 12 GHz. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram Product Features 16 Pin QFN (3 x 3 x 0.85 mm) Frequency: DC to 12 GHz Output Power (P3dB): 11 W 1 Linear : 24.0 db 1 Typical 3dB: 68.8 % 1 Operating Voltage: 32 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package Note 2 GHz (Loadpull) Applications Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering info Part No. ECCN Description S2 EAR99 2 Piece Sample Bag SQ EAR99 25 Piece Sample Bag SR EAR99 0 Piece 7 Reel EVB01 EAR GHz EVB Rev. A - 1 of 23 - Disclaimer: Subject to change without notice
2 Absolute Maximum Ratings 2 Parameter Rating Units Breakdown Voltage,BVDG 0 V Gate Voltage Range, VG V Drain Current, ID 2.4 A Gate Current Range, IG ma Power Dissipation, CW, PDISS 17.5 W RF Input Power at 3.3 GHz, CW, Ω, T = 25 C +29 dbm Channel Temperature, TCH 275 C Mounting Temperature ( Seconds) 3 C Storage Temperature 65 to +1 C 1. At Channel temperature of 0 C. 2. Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions 1 Parameter Min Typ Max Units Operating Temp. Range C Drain Voltage Range, VD V Drain Bias Current, IDQ ma Drain Current, ID 6 ma Gate Voltage, VG V Channel Temperature (TCH) 225 C Power Dissipation, CW (PD) W Power Dissipation, Pulsed (PD) 2, W 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Back plane of package at 85 C 3. Pulse Width = 0 us, Duty Cycle = % 4. To be adjusted to desired IDQ Rev. A - 2 of 23 - Disclaimer: Subject to change without notice
3 Pulsed Characterization Load Pull Performance Power Tuned 1 Parameters Typical Values Unit Frequency, F GHz Linear, GLIN db Output Power at 3dB compression point, P3dB dbm Power-Added-Efficiency at 3dB compression point, 3dB % at 3dB compression point db 1. Test conditions unless otherwise noted: VD = +32 V, IDQ = ma, Temp = +25 C Pulsed Characterization Load Pull Performance Efficiency Tuned 1 Parameters Typical Values Unit Frequency GHz Linear, GLIN db Output Power at 3dB compression point, P3dB dbm Power-Added-Efficiency at 3dB compression point, 3dB % at 3dB compression point, db G3dB 1- Test conditions unless otherwise noted: VD = +32 V, IDQ = ma, Temp = +25 C RF Characterization GHz EVB Performance At 3.3 GHz 1 Parameter Min Typ Max Units Linear, GLIN 16.3 db Output Power at 3dB compression point, P3dB 39.9 dbm Drain Efficiency at 3dB compression point, DEFF3dB 58.7 % at 3dB compression point, G3dB 13.3 db 1. VD = +32 V, IDQ = ma, Temp = +25 C, Pulse Width = 0 us, Duty Cycle = % RF Characterization Mismatch Ruggedness at 3.3 GHz 1,2 Symbol Parameter db Compression Typical VSWR Impedance Mismatch Ruggedness 3 :1 1. Test conditions unless otherwise noted: TA = 25 C, VD = 32 V, IDQ = ma 2. Driving input power is determined at pulsed compression under matched condition at EVB output connector. Rev. A - 3 of 23 - Disclaimer: Subject to change without notice
4 Median Lifetime 1 Note: 1- For pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle. Rev. A - 4 of 23 - Disclaimer: Subject to change without notice
5 Thermal and Reliability Information - CW Parameter Conditions Values Units Thermal Resistance, FEA (θ JC) (1) (3) 8.9 C/W Channel Temperature, FEA (T CH) (1) 153 C 85 C Case Median Lifetime (T M) (1) 2.0E9 Hrs 7.6 W Pdiss, CW Thermal Resistance, IR (θ JC) (2) (3) 6.1 (2) C/W Channel Temperature, IR (T CH) (2) 131 (2) C Thermal Resistance, FEA (θ JC) (1) (3) 9.3 C/W Channel Temperature, FEA (T CH) (1) 179 C 85 C Case Median Lifetime (T M) (1) 1.0E8 Hrs.1 W Pdiss, CW Thermal Resistance, IR (θ JC) (2) (3) 6.2 (2) C/W Channel Temperature, IR (T CH) (2) 148 (2) C Thermal Resistance, FEA (θ JC) (1) (3) 9.8 C/W Channel Temperature, FEA (T CH) (1) 9 C 85 C Case Median Lifetime (T M) (1) 6.0E6 Hrs 12.6 W Pdiss, CW Thermal Resistance, IR (θ JC) (2) (3) 6.4 (2) C/W Channel Temperature, IR (T CH) (2) 166 (2) C Thermal Resistance, FEA (θ JC) (1) (3).4 C/W Channel Temperature, FEA (T CH) (1) 242 C 85 C Case Median Lifetime (T M) (1) 4.0E5 Hrs 15.1 W Pdiss, CW Thermal Resistance, IR (θ JC) (2) (3) 6.6 (2) C/W Channel Temperature, IR (T CH) (2) 185 (2) C 1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise noted, all thermal references are FEA. 2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability. 3. Thermal resistance measured to backside of package. Rev. A - 5 of 23 - Disclaimer: Subject to change without notice
6 Thermal and Reliability Information - Pulsed Parameter Conditions Values Units Thermal Resistance, FEA (θ JC) (1) (3) 6.9 C/W Channel Temperature, FEA (T CH) (1) 138 C 85 C Case Median Lifetime (T M) (1) 4.0E Hrs 7.6 W Pdiss, Pulsed 0us % DC Thermal Resistance, IR (θ JC) (2) (3) 4.7 (2) C/W Channel Temperature, IR (T CH) (2) 121 (2) C Thermal Resistance, FEA (θ JC) (1) (3) 7.0 C/W Channel Temperature, FEA (T CH) (1) 156 C 85 C Case Median Lifetime (T M) (1) 6.0E9 Hrs.1 W Pdiss, Pulsed 0us % DC Thermal Resistance, IR (θ JC) (2) (3) 4.7 (2) C/W Channel Temperature, IR (T CH) (2) 133 (2) C Thermal Resistance, FEA (θ JC) (1) (3) 7.2 C/W Channel Temperature, FEA (T CH) (1) 176 C 85 C Case Median Lifetime (T M) (1) 8.0E8 Hrs 12.6 W Pdiss, Pulsed 0us % DC Thermal Resistance, IR (θ JC) (2) (3) 4.8 (2) C/W Channel Temperature, IR (T CH) (2) 146 (2) C Thermal Resistance, FEA (θ JC) (1) (3) 7.5 C/W Channel Temperature, FEA (T CH) (1) 198 C 85 C Case Median Lifetime (T M) (1) 9.5E7 Hrs 15.1 W Pdiss, Pulsed 0us % DC Thermal Resistance, IR (θ JC) (2) (3) 4.9 (2) C/W Channel Temperature, IR (T CH) (2) 159 (2) C 1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise noted, all thermal references are FEA. 2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability. 3. Thermal resistance measured to backside of package. Rev. A - 6 of 23 - Disclaimer: Subject to change without notice
7 Load Pull Smith Charts 1, 2 1. Vd = 32 V, IDQ = ma, Pulsed signal with 0 us pulse width and % duty cycle. 2. See page 18 for load pull and source pull reference planes. 2 GHz, Load-pull Zs(1fo) = i Zs(2fo) = i Zl(2fo) = i Max Power is.4dbm at Z = i = i Max is 41.4dB at Z = i = i Max is 68.8% at Z = i = i Zo = 15 3dB Compression Referenced to Peak Power Rev. A - 7 of 23 - Disclaimer: Subject to change without notice
8 Load Pull Smith Charts 1, 2 1. Vd = 32 V, IDQ = ma, Pulsed signal with 0 us pulse width and % duty cycle. 2. See page 18 for load pull and source pull reference planes. 3 GHz, Load-pull 1.8 Zs(1fo) = i Zs(2fo) = i Zl(2fo) = i Max Power is dbm at Z = i = i Max is 33.1dB at Z = i = i Max is 66.1% at Z = i = i Zo = 15 3dB Compression Referenced to Peak Power Rev. A - 8 of 23 - Disclaimer: Subject to change without notice
9 Load Pull Smith Charts 1, 2 1. Vd = 32 V, IDQ = ma, Pulsed signal with 0 us pulse width and % duty cycle. 2. See page 18 for load pull and source pull reference planes. 4 GHz, Load-pull Zs(1fo) = i Zs(2fo) = i Zl(2fo) = i 1.6 Max Power is.3dbm at Z = i = i Max is 19.3dB at Z = i = i Max is 69.4% at Z = i = i Zo = 15 3dB Compression Referenced to Peak Power Rev. A - 9 of 23 - Disclaimer: Subject to change without notice
10 Load Pull Smith Charts 1, 2 1. Vd = 32 V, IDQ = ma, Pulsed signal with 0 us pulse width and % duty cycle. 2. See page 18 for load pull and source pull reference planes. 6 GHz, Load-pull Zs(1fo) = i 14.5 Max Power is.4dbm at Z = i = i Max is 14.5dB at Z = i = i Max is 61.2% at Z = i = i Power Zo = 15 3dB Compression Referenced to Peak Rev. A - of 23 - Disclaimer: Subject to change without notice
11 Load Pull Smith Charts 1, 2 1. Vd = 32 V, IDQ = ma, Pulsed signal with 0 us pulse width and % duty cycle. 2. See page 18 for load pull and source pull reference planes GHz, Load-pull Zs(fo) = i Zs(2fo) = i Zs(3fo) = i Zl(2fo) = NaN Zl(3fo) = NaN Max Power is dbm at Z = i = i Max is.2db at Z = i = i Max is.3% at Z = i = i Zo = 15 3dB Compression Referenced to Peak Power Rev. A - 11 of 23 - Disclaimer: Subject to change without notice
12 Load Pull Smith Charts 1, 2 1. Vd = 32 V, IDQ = ma, Pulsed signal with 0 us pulse width and % duty cycle. 2. See page 18 for load pull and source pull reference planes..0ghz, Load-pull Zs(fo) = i Zs(2fo) = i Zs(3fo) = i Zl(2fo) = NaN Zl(3fo) = NaN Max Power is 39.9dBm at Z = i = i Max is 9.2dB at Z = i = i Max is 46.3% at Z = i = i Zo = 15 3dB Compression Referenced to Peak Power Rev. A - 12 of 23 - Disclaimer: Subject to change without notice
13 [db] [%] [db] [%] [db] [%] [db] [%] [db] [%] [db] [%] Typical Performance Load Pull Drive-up 1. Pulsed signal with 0 us pulse width and % duty cycle, Vd = 32 V, IDQ = ma 2. See page 18 for load pull and source pull reference planes where the performance was measured Zs(1fo) = i Zs(2fo) = i Zl(1fo) = i Zl(2fo) = i and vs. Output Power 2 GHz - Power Tuned Zs(1fo) = i Zs(2fo) = i Zl(1fo) = i Zl(2fo) = i and vs. Output Power 2 GHz - Efficiency Tuned Zs(1fo) = i Zs(2fo) = i Zl(1fo) = i Zl(2fo) = i and vs. Output Power 3 GHz - Power Tuned Zs(1fo) = i Zs(2fo) = i Zl(1fo) = i Zl(2fo) = i and vs. Output Power 3 GHz - Efficiency Tuned Zs(1fo) = i Zs(2fo) = i Zl(1fo) = i Zl(2fo) = i and vs. Output Power 4 GHz - Power Tuned Zs(1fo) = i Zs(2fo) = i Zl(1fo) = i Zl(2fo) = i and vs. Output Power 4 GHz - Efficiency Tuned Rev. A - 13 of 23 - Disclaimer: Subject to change without notice
14 [db] [%] [db] [%] [db] [%] [db] [%] [db] [%] [db] [%] Typical Performance Load Pull Drive-up 1. Pulsed signal with 0 us pulse width and % duty cycle, Vd = 32 V, IDQ = ma 2. See page 18 for load pull and source pull reference planes where the performance was measured Zs(1fo) = i Zl(1fo) = i and vs. Output Power 6 GHz - Power Tuned Zs(1fo) = i Zl(1fo) = i and vs. Output Power 6 GHz - Efficiency Tuned Zs-fo = i Zs-2fo = i Zs-3fo = i Zl-fo = i Zl-2fo = NaN Zl-3fo = NaN and vs. Output Power 9.0 GHz - Power Tuned Zs-fo = i Zs-2fo = i Zs-3fo = i Zl-fo = i Zl-2fo = NaN Zl-3fo = NaN and vs. Output Power.0 GHz - Power Tuned Zs-fo = i Zs-2fo = i Zs-3fo = i Zl-fo = i Zl-2fo = NaN Zl-3fo = NaN and vs. Output Power 9.0 GHz - Efficiency Tuned Zs-fo = i Zs-2fo = i Zs-3fo = i Zl-fo = i Zl-2fo = NaN Zl-3fo = NaN and vs. Output Power.0 GHz - Efficiency Tuned Rev. A - 14 of 23 - Disclaimer: Subject to change without notice
15 Power Driveup Performance Over Temperatures of GHz EVB 1 1- Vd = 32 V, IDQ = ma, Pulse Width = 0 us, Duty Cycle = % Rev. A - 15 of 23 - Disclaimer: Subject to change without notice
16 Power Driveup Performance at 25 C of GHz EVB 1 1- Vd = 32 V, IDQ = ma, Pulse Width = 0 us, Duty Cycle = % Rev. A - 16 of 23 - Disclaimer: Subject to change without notice
17 Two-Tone Performance at 25 C of GHz EVB 1 1- Center Frequency = 3.3 GHz. Tone Seperation = MHz. Rev. A - 17 of 23 - Disclaimer: Subject to change without notice
18 Pin Layout 1 1. The will be marked with the 22 designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MZZZ is the batch ID. Pin Description Pin Symbol Description 2, 3 VG / RF IN Gate voltage / RF Input 9 12 VD / RF OUT Drain voltage / RF Output 1, 4, 5 8, NC Not Connected 17 Back Plane Source to be connected to ground Rev. A - 18 of 23 - Disclaimer: Subject to change without notice
19 Mechanical Drawing 1- All dimensions are in mm, otherwise noted. Tolerance is ±0.0 mm. Bias-up Procedure Bias-down Procedure 1. Set V G to -4 V. 1. Turn off RF signal. 2. Set ID current limit to 0 ma. 2. Turn off VD 3. Apply 32 V VD. 3. Wait 2 seconds to allow drain capacitor to discharge 4. Slowly adjust VG until ID is set to ma. 4. Turn off VG 5. Set ID current limit to 1 A 6. Apply RF. Rev. A - 19 of 23 - Disclaimer: Subject to change without notice
20 PCB Layout GHz EVB 1 1- PCB Material is RO03, 8 mil thick substrate, 1 oz. copper each side. Rev. A - of 23 - Disclaimer: Subject to change without notice
21 Bill Of material GHz EVB Ref Des Value Description Manufacturer Part Number C, C13 0 pf C0G 0V 5% 03 Capacitor TDK C18C0G2E1JT0AA C11, C14 1 nf X7R 0V % 03 Capacitor AVX 031C2KAT2A C6 C8 1.0 pf RF NPO 2VDC ± 0.05 pf Capacitor ATC 0S1R0AT2X C9, C pf RF NPO 2VDC ± 0.1 pf Capacitor ATC 0S9R1BT2X C16 pf RF NPO 2VDC 1% Capacitor ATC 0S0FT2X C pf RF NPO 2VDC ± 0.05 pf Capacitor ATC 0S0R3AT2X C pf RF NPO 2VDC ± 0.05 pf Capacitor ATC 0S0R6AT2X C19 C 0.8 pf RF NPO 2VDC ± 0.05 pf Capacitor ATC 0S0R8AT2X C4 C5 2.2 pf RF NPO 2VDC ± 0.05 pf Capacitor ATC 0S2R2AT2X C3 5.6pF RF NPO 2VDC ± 0.1 pf Capacitor ATC 0S5R6BT2X C1 33 uf V % SVP Capacitor Panasonic EEEFK1K3P C2 uf 16V % Tantalum Capacitor AVX TPSC6KR00 J1 J2 SMA Panel Mount 4-hole Jack Gigalane PSF-S R5 0 Ohm 03 5% Thick Film Resistor ANY R6 R7 5.1 Ohm 03 1% Thick Film Resistor ANY R8 Ohm 03 1% Thick Film Resistor ANY R1 22 Ohm 03 5% Thick Film Resistor ANY R3 5.6 Ohm 03 5% Thick Film Resistor ANY R2, R4 33 Ohm 03 1% Thick Film Resistor ANY Rev. A - 21 of 23 - Disclaimer: Subject to change without notice
22 Recommended Solder Temperature Profile Rev. A - 22 of 23 - Disclaimer: Subject to change without notice
23 Product Compliance Information ESD Sensitivity Ratings Caution! ESD Sensitive Device Solderability Compatible with lead free soldering processes, 2 C maximum reflow temperature. Package lead plating: NiAu ESD Rating ESD Rating: Value: Test: Standard: MSL Rating MSL Rating: Test: Standard: TBD TBD Human Body Model (HBM) JEDEC Standard JESD22-A114 TBD 2 C convection reflow JEDEC Standard IPC/JEDEC J-STD-0 The use of no-clean solder to avoid washing after soldering is recommended. This part is compliant with EU 02/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br2) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: Tel: info-sales@qorvo.com Fax: For technical questions and application information: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Rev. A - 23 of 23 - Disclaimer: Subject to change without notice
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Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7-3.7 GHz P SAT :.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db
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TGA54-SM Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range:
More informationTGF Watt Discrete Power GaN on SiC HEMT
Applications Marine radar Satellite communications Point to point communications Military communications Broadband amplifiers High efficiency amplifiers Product Features Functional Block Diagram Frequency
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QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically
More informationQPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.
Product Description The is a discrete GaN on SiC HEMT which operates from 3.4 3.8 GHz. The device is a single stage matched power amplifier transistor. The can be used in Doherty architecture for the final
More informationQPA GHz 50 Watt GaN Amplifier
QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically
More informationTGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
More informationQPD W, 48 V GHz GaN RF Power Transistor
Applications W-CDMA / LTE Macrocell Base Station, Band 1 and Band 3 Active Antenna General Purpose Applications 2 Lead NI400 Package Product Features Functional Block Diagram Operating Frequency Range:
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QPM1 Product Description The Qorvo QPM1 is an integrated limiter/lna providing robust, high performance over the 2 2GHz frequency range. The QPM1 delivers 17 db small signal gain with gain control and
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TGA78-CP Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal Gain: > db IM3: -
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Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
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Applications Radar Product Features Frequency Range:.1. GHz Pout: 9 dbm at PIN = 7 dbm PAE: 5 % Pulsed Power Gain: db at PIN = 7 dbm Bias: VD = V, IDQ = ma, VG = - V typical, pulsed (PW = 15 ms, DC = %)
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Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Functional Block Diagram Frequency Range: 2.5 to 6 GHz PSAT: 46.5 dbm @ PIN = 26dBm, CW PAE: 36% Small
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Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9.5-11.5 GHz Saturated Output Power: 39 dbm Small
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Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
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More informationTGA2704-SM 8W 9-11 GHz Power Amplifier
Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9 - Saturated Output Power: 39 dbm Small Signal
More informationApplications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier
Applications Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 10 12 GHz TOI: 43 dbm Power: 34.5 dbm Psat, 33 dbm P1dB Gain: 24 db Return
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More informationTGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM
More informationQPD W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz. can deliver PAVG of 36 W at +48 V operation.
More informationTGA2760-SM GHz Power Amplifier
Applications Point-to-Point Radio -Lead 8.0 x.0 x 2 mm Package Product Features Functional Block Diagram Frequency Range: 9.5 12 GHz Power: +42 dbm Psat Gain: 33 db Integrated Power Detector Bias: V D1
More informationTGL2767-SM-EVB. 2 31GHz Voltage Variable Attenuator. Product Description. Product Features. Applications Block Diagram. Ordering Information
Product Description The TGL2767 SM is a packaged wideband voltagevariable attenuator using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from 2 31 GHz, the TGL2767 SM offers > 2 db of
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Product Description Qorvo s is a wideband high power MMIC amplifier fabricated on Qorvo s production.15um GaN on SiC process (QGaN15). The operates from 1 8 GHz and typically provides W saturated output
More informationTGS SM GHz High Power SPDT Reflective Switch
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Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM
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Product Description The QPA2705 is an integrated 2-stage Power Amplifier Module designed for Metro Cell Base Station applications with 5 W RMS at the device output. The module is 50 Ω input and output
More informationTGP2105-SM 6-18 GHz 6-Bit Digital Phase Shifter (+Vc)
Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital Phase Shifter
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TGP217-SM Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital
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Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
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Applications Commercial and Military Radar Electronic Warfare Satellite Communications Point to Point Radio General Purpose Product Features Functional Block Diagram Frequency Range:.1-15 GHz 6-Bit Digital
More informationTGL2226-SM GHz 6-Bit Digital Attenuator
Product Description Qorvo s TGL2226 SM is a wideband, 6 bit digital attenuator fabricated using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from.1 15 GHz, the TGL2226 SM offers a low
More informationQPA W, 28 V, GHz GaN PA Module
Product Description The QPA3503 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications with 3 W RMS at the device output covering frequency range from 3.4 to 3.6 GHz. The
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Applications General Purpose QFN 8x8mm 28L Product Features Frequency Range: 2 12 GHz Power: 23 dbm P SAT Gain: 34 db Output TOI: 29 dbm Noise Figure: 3 db Bias: V D = 5 V, I D = 0 ma, V G1 = -0.7 V, V
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Product Description The Qorvo is a packaged 6-bit digital phase shifter fabricated on Qorvo s high performance.15 um GaAs phemt process. It operates over 2.5-4 GHz while providing 36 of phase coverage
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Product Description The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture
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Applications Commercial and Military Radar Electronic Warfare Satellite Communications Point to Point Radio Instrumentation General Purpose Product Features Functional Block Diagram Frequency Range: 2
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Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram
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TGA279-2-FL Applications Ku-band Communications Product Features Frequency Range: 14.0 1. GHz P SAT : 43 dbm PAE: 27% Small Signal Gain: db Integrated Voltage Detector Bias: V D = 2 V, I DQ = 1.0 A, V
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General Description The is a high-linearity, ultra-low noise gain block amplifier with a bypass mode functionality integrated in the product. At. GHz, the amplifier typically provides db gain, +. dbm OIP,
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Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless Product Features SOT-89 Package Style Functional Block Diagram
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