QPA1003D. 1 8 GHz 10 W GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

Transcription

1 Product Description Qorvo s is a wideband high power MMIC amplifier fabricated on Qorvo s production.15um GaN on SiC process (QGaN15). The operates from 1 8 GHz and typically provides W saturated output power with power-added efficiency of % and large-signal gain of 25 db. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The is matched to 5Ω with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands. The is % DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant. Evaluation boards are available upon request. Functional Block Diagram Product Features Frequency Range: 1 8 GHz POUT: PIN = 15 dbm PAE: PIN = 15 dbm Large Signal Gain: 25 PIN = 15dBm Small Signal Gain: db Bias: VD = +28 V, IDQ = 65 ma, VG = 2.2 V Typical Chip Dimensions: 3.3 x 3.55 x. mm Process Technology: QGaN15 Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications Electronic Warfare (EW) Radar Communications Test Instrumentation Ordering Information Part No. ECCN Description 3A1.b.2.c 1 8 GHz W GaN Power Amplifier Data Sheet Rev. B July 5, 16-1 of

2 Electrical Specifications Test conditions unless otherwise noted: 25 C, VD = +28 V, IDQ = 65 ma, VG = 2.2 V Typical,. Parameter Min Typ Max Units Operational Frequency Range 1 8 GHz Output PIN = 15 dbm Power Added PIN = 15 dbm Small Signal Gain Input Return Loss Output Return Loss Frequency = 1 GHz 39.4 Frequency = 4 GHz.6 dbm Frequency = 8 GHz Frequency = 1 GHz 46.8 Frequency = 4 GHz.4 Frequency = 8 GHz.4 Frequency = 1 GHz 31.5 Frequency = 4 GHz 32.6 Frequency = 8 GHz 31 Frequency = 1 GHz 13.2 Frequency = 4 GHz 14.7 Frequency = 8 GHz 14.4 Frequency = 1 GHz 16.7 Frequency = 4 GHz 11 Frequency = 8 GHz 21 Small Signal Gain Temperature Coefficient -.4 db/ C Output Power Temperature Coefficient -.12 dbm/ C % db db db Recommended Operating Conditions ConditioConditions Parameter Value / Range Drain Voltage (VD) +28 V Drain Current (IDQ) 65 ma Gate Voltage (VG) 2.2 V (Typ.) Temperature (TBASE) to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Data Sheet Rev. B July 5, 16-2 of

3 P OUT (dbm) PAE (%) Drain Current (ma) Gate Current (ma) P OUT (dbm) PAE (%) Performance Plots Large Signal () P OUT vs. Frequency vs. V D Vd=22V Vd=25V Vd=28V P IN = 15 dbm 6 5 PAE vs. Frequency vs. V D Vd=22V Vd=25V Vd=28V P IN = 15 dbm Drain Current vs. Frequency vs. V D Vd=22V Vd=25V Vd=28V P IN = 15 dbm Gate Current vs. Frequency vs. V D P IN = 15 dbm Vd=22V Vd=25V Vd=28V P OUT vs. Frequency vs. I DQ P IN = 15 dbm Idq=4mA Idq=65mA V D = 28 V 6 5 PAE vs. Frequency vs. I DQ P IN = 15 dbm V D = 28 V Idq=4mA Idq=65mA Data Sheet Rev. B July 5, 16-3 of

4 Drain Current (ma) Gate Current (ma) P OUT (dbm) PAE (%) Drain Current (ma) Gate Current (ma) Performance Plots Large Signal () Drain Current vs. Frequency vs. I DQ V D = 28 V P IN = 15 dbm Idq=4mA Idq=65mA Gate Current vs. Frequency vs. I DQ P IN = 15 dbm V D = 28 V Idq=4mA Idq=65mA P OUT vs. Frequency vs. P IN V D = 28 V, Pin=5dBm Pin=dBm Pin=13dBm Pin=15dBm Pin=16dBm Pin=17dBm 6 5 PAE vs. Frequency vs. P IN V D = 28 V, Pin=5dBm Pin=dBm Pin=13dBm Pin=15dBm Pin=16dBm Pin=17dBm Drain Current vs. Frequency vs. P IN V D = 28 V, Pin=5dBm Pin=dBm Pin=13dBm Pin=15dBm Pin=16dBm Pin=17dBm Gate Current vs. Frequency vs. P IN V D = 28 V, Pin=5dBm Pin=13dBm Pin=16dBm Pin=dBm Pin=15dBm Pin=17dBm Data Sheet Rev. B July 5, 16-4 of

5 P OUT (dbm) PAE (%) Drain Current (ma) Gate Current (ma) P OUT (dbm) PAE (%) Performance Plots Large Signal () P OUT vs. Frequency vs. Temp P IN = 15 dbm V D = 28 V, 6 5 PAE vs. Frequency vs. Temp V D = 28 V, P IN = 15 dbm C 25 C 85 C - C 25 C 85 C Drain Current vs. Frequency vs. Temp P IN = 15 dbm - C 25 C 85 C V D = 28 V, Gate Current vs. Frequency vs. Temp P IN = 15 dbm V D = 28 V, - C 25 C 85 C P OUT vs. P IN vs. Freq GHz 2GHz 4GHz 6GHz 8GHz 22 V D = 28 V, PAE vs. P IN vs. Freq V D = 28 V, GHz 2GHz 4GHz 6GHz 8GHz Data Sheet Rev. B July 5, 16-5 of

6 Drain Current (ma) Gate Current (ma) P OUT (dbm) PAE (%) Drain Current (ma) Gate Current (ma) Performance Plots Large Signal () Drain Current vs. P IN vs. Freq V D = 28 V, 1GHz 2GHz 4GHz 6GHz 8GHz Gate Current vs. P IN vs. Freq V D = 28 V, 1GHz 2GHz 4GHz 6GHz 8GHz P OUT vs. P IN vs. Freq GHz 2GHz 4GHz 6GHz 8GHz 22 V D = 28 V, I DQ = 4 ma PAE vs. P IN vs. Freq V D = 28 V, I DQ = 4 ma GHz 2GHz 4GHz 6GHz 8GHz Drain Current vs. P IN vs. Freq V D = 28 V, I DQ = 4 ma 1GHz 2GHz 4GHz 6GHz 8GHz Gate Current vs. P IN vs. Freq V D = 28 V, I DQ = 4 ma 1GHz 2GHz 4GHz 6GHz 8GHz Data Sheet Rev. B July 5, 16-6 of

7 P OUT (dbm) PAE (%) Drain Current (ma) Gate Current (ma) P OUT (dbm) PAE (%) Performance Plots Large Signal () P OUT vs. P IN vs. V D Freq. = 4 GHz V 25V 28V PAE vs. P IN vs. V D Freq. = 4 GHz 22V 25V 28V Drain Current vs. P IN vs. V D Freq. = 4 GHz V 25V 28V Gate Current vs. P IN vs. V D 22 Freq. = 4 GHz V 25V 28V P OUT vs. P IN vs. I DQ Freq. = 4 GHz mA 65mA 22 V D = 28 V PAE vs. P IN vs. I DQ Freq. = 4 GHz 4mA 65mA 5 V D = 28 V Data Sheet Rev. B July 5, 16-7 of

8 Drain Current (ma) Gate Current (ma) P OUT (dbm) PAE (%) Drain Current (ma) Gate Current (ma) Performance Plots Large Signal () 16 Drain Current vs. P IN vs. I DQ Freq. = 4 GHz 8 6 4mA 65mA V D = 28 V Gate Current vs. P IN vs. I DQ 22 Freq. = 4 GHz V D = 28 V 4 2 4mA 65mA P OUT vs. P IN vs. Temperature Freq. = 1 GHz C 25 C 85 C 22 V D = 28 V, PAE vs. P IN vs. Temperature Freq. = 1 GHz - C 25 C 85 C V D = 28 V, Drain Current vs. P IN vs. Temp Freq. = 1 GHz C 25 C 85 C V D = 28 V, Gate Current vs. P IN vs. Temp 18 Freq. = 1 GHz V D = 28 V, C 25 C 85 C Data Sheet Rev. B July 5, 16-8 of

9 P OUT (dbm) PAE (%) Drain Current (ma) Gate Current (ma) P OUT (dbm) PAE (%) Performance Plots Large Signal () P OUT vs. P IN vs. Temperature Freq. = 4 GHz C 25 C 85 C 22 V D = 28 V, PAE vs. P IN vs. Temperature Freq. = 4 GHz - C 25 C 85 C 5 V D = 28 V, Drain Current vs. P IN vs. Temp Freq. = 4 GHz - C 25 C 85 C V D = 28 V, Gate Current vs. P IN vs. Temp Freq. = 4 GHz V D = 28 V, - C 25 C 85 C P OUT vs. Frequency vs. V D Temp. = +85 C P IN = 15dBm Vd=22V Vd=25V Vd=28V PAE vs. Frequency vs. V D Temp. = +85 C P IN = 15dBm Vd=22V Vd=25V Vd=28V Data Sheet Rev. B July 5, 16-9 of

10 IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) Performance Plots Linearity - IM3 vs. Output Power vs. V D, 1 GHz, MHz Tone Spacing Vd=22V Vd=25V Vd=28V IM5 vs. Output Power vs. V D, 1 GHz, MHz Tone Spacing Vd=22V Vd=25V Vd=28V IM3 vs. Output Power vs. V D, 5 GHz, MHz Tone Spacing Vd=22V Vd=25V Vd=28V IM5 vs. Output Power vs. V D, 5 GHz, MHz Tone Spacing Vd=22V Vd=25V Vd=28V IM3 vs. Output Power vs. I DQ V D = 28 V, 1 GHz, MHz Tone Spacing Idq=4mA Idq=65mA IM5 vs. Output Power vs. I DQ V D = 28 V, 1 GHz, MHz Tone Spacing Idq=4mA Idq=65mA Data Sheet Rev. B July 5, 16 - of

11 IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) Performance Plots Linearity - IM3 vs. Output Power vs. I DQ V D = 28 V, 5 GHz, MHz Tone Spacing Idq=4mA Idq=65mA IM5 vs. Output Power vs. I DQ V D = 28 V, 5 GHz, MHz Tone Spacing Idq=4mA Idq=65mA IM3 vs. Output Power vs. Frequency V D = 28 V,, MHz Tone Spacing GHz 2GHz 5GHz 8GHz IM5 vs. Output Power vs. Frequency V D = 28 V,, MHz Tone Spacing GHz 2GHz 5GHz 8GHz IM3 vs. Output Power vs. Temp V D = 28 V,, 5. GHz, MHz Tone Spacing - C +25 C +85 C IM5 vs. Output Power vs. Temp V D = 28 V,, 5. GHz, MHz Tone Spacing - C +25 C +85 C Data Sheet Rev. B July 5, of

12 2 ND Harmonic (dbc) 3 RD Harmonic (dbc) 2 ND Harmonic (dbc) 3 RD Harmonic (dbc) 2 ND Harmonic (dbc) 3 RD Harmonic (dbc) Performance Plots Linearity 2 ND Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 1 GHz 3 RD Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 1 GHz V 25V 28V Output f (dbm) - 22V 25V 28V Output f (dbm) 2 ND Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 5 GHz 3 RD Harmonic vs. Output Power vs. V D Temp. = 25 C Freq. = 5 GHz V 25V 28V Output f (dbm) - 22V 25V 28V Output f (dbm) 2 ND Harmonic vs. Output Power vs. Freq Temp. = 25 C V D = 28 V, 3 RD Harmonic vs. Output Power vs. Freq Temp. = 25 C V D = 28 V, GHz 2GHz 5GHz 8GHz Output f (dbm) - 1GHz 2GHz 5GHz 8GHz Output f (dbm) Data Sheet Rev. B July 5, of

13 2 ND Harmonic (dbc) 3 RD Harmonic (dbc) 2 ND Harmonic (dbc) 3 RD Harmonic (dbc) Performance Plots Linearity 2 ND Harmonic vs. Output Power vs. Temp Freq. = 1 GHz V D = 28 V, 3 RD Harmonic vs. Output Power vs. Temp Freq. = 1 GHz V D = 28 V, C +25C +85C Output f (dbm) - -C +25C +85C Output f (dbm) 2 ND Harmonic vs. Output Power vs. Temp Freq. = 5 GHz V D = 28 V, 3 RD Harmonic vs. Output Power vs. Temp Freq. = 5 GHz V D = 28 V, C +25C +85C Output f (dbm) - -C +25C +85C Output f (dbm) Data Sheet Rev. B July 5, of

14 S11 (db) S22 (db) S21 (db) S21 (db) S21 (db) Performance Plots Small Signal Gain vs. Frequency vs. V D Gain vs. Frequency vs. I DQ V D = 28 V V 25V 28V 26 4 ma 65 ma Gain vs. Frequency vs. Temperature V D = 28 V, C +25C +85C -5 Input Return Loss vs. Freq. vs. Temp V D = 28 V, -5 Output Return Loss vs. Freq. vs. Temp V D = 28 V, C +25C +85C C +25C +85C Data Sheet Rev. B July 5, of

15 P DISS (W) θ JC (C/W) Median Lifetime, T M (Hours) Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) 181 C/W TBASE = 85 C, VD = +28 V () Channel Temperature (TCH) (Quiescent) 5.28 C At IDQ = 65 ma, PDISS = 18.2 W Median Lifetime (TM) 3.5E+8 Hrs Thermal Resistance (θjc) (1) TBASE = 85 C, VD = +25 V () 6.5 C/W Channel Temperature (TCH) (Under RF drive) At Freq = 5.5 GHz, PIN = 15 dbm: IDQ = 65 ma, ID_Drive = 1.2 A 218 C Median Lifetime (TM) POUT = 39 dbm, PDISS = 22 W 1.3E+7 Hrs Thermal Resistance (θjc) (1) TBASE = 85 C, VD = +28 V () 6.31 C/W Channel Temperature (TCH) (Under RF drive) At Freq = 5.5 GHz, PIN = 15 dbm: IDQ = 65 ma, ID_Drive = 1.2 A 6 C Median Lifetime (TM) POUT = 39 dbm, PDISS = 25.5 W 1.5E+6 Hrs Notes: 1. Thermal resistance measured to back of carrier plate. MMIC mounted to mil CuMo (75/25) carrier using 1.5 mil AuSn. Median Lifetime Test Conditions: VD = +28 V; Failure Criteria = % reduction in IDQ_MAX 1E+15 1E+14 1E+13 1E+12 1E+11 1E+ 1E+9 1E+8 1E+7 1E+6 1E+5 FET16 (QGaN15) Median Lifetime vs. T CH 1E Channel Temperature, T CH ( C) P DISS vs. Frequency vs. V D Temp. = +85 C P IN = 15dBm Vd=22V Vd=25V Vd=28V Thermal Resistance vs. P DISS T BASE = +85 C V D = 28 V, P DISS (W) Data Sheet Rev. B July 5, of

16 Applications Information and Pad Layout VG = -2.2 V Typical VD = 28V, IDQ = 65 ma R1 5.1 Ohm R2 5.1 Ohm C5 // pf C6 // pf R4 5.1 Ohm R3 5.1 Ohm C1 uf C2.1 uf 2 3 C4.1 uf C3 uf J1 RF In 1 4 J2 RF Out Bias Up Procedure 1. Set ID limit to 1.3 A, IG limit to 6 ma 2. Apply 5 V to VG 3. Apply +28 V to VD; ensure IDQ is approx. ma 4. Adjust VG until IDQ = 65 ma (VG ~ 2.2 V Typ.). 5. Turn on RF supply Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to 5 V; ensure IDQ is approx. ma 3. Set VD to V 4. Turn off VD supply 5. Turn off VG supply Data Sheet Rev. B July 5, of

17 Evaluation Board (EVB) Layout Assembly Bill of Materials Reference Des. Value Description Manuf. Part Number C1, C3 μf Cap, 15, 5 V, %, X7R Various C2, C4.1 μf Cap, 2, 5 V, %, X5R Various C5, C6 pf / pf Cap, x, 5V, Single Layer Various R1, R2, R3, R4 5.1 Ohm Res, 2, 5 V, 5 % Various Data Sheet Rev. B July 5, of

18 Mechanical Information Units: millimeters Thickness:. Die x,y size tolerance: ±.5 Ground is backside of die Bond Pad Description Pad No. Symbol Pad Size (mm) Description 1 RF In.97 x.7 RF Input; matched to 5 Ω, DC blocked 2 VG.5 x.112 Gate voltage, bias network is required; see Application Circuit on page 16 as an example. 3 VD.312 x.96 Drain voltage, bias network is required; see Application Circuit on page 16 as an example. 4 RF Out.97 x.7 RF Output; matched to 5 Ω, DC blocked Data Sheet Rev. B July 5, of

19 Assembly Notes Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment (i.e. epoxy) can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: Use AuSn (8/) solder and limit exposure to temperatures above C to 3 4 minutes, maximum. An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use any kind of flux. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonic are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with.7-inch wire. Data Sheet Rev. B July 5, of

20 Maximum Gate Current (ma) Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current Forward Gate Current (IG) Power Dissipation (PDISS), 85 C, Input Power,, 5 Ω, (PIN), VD = +28 V, IDQ = 65 ma, 85 C, Value / Range V -8 to V ma See IG_MAX plot W 18 dbm Input Power,, VSWR 3:1, (PIN) VD = +28 V, IDQ = 65 ma, 85 C 18 dbm Channel Temperature (TCH) 275 C Mounting Temperature ( Seconds) 26 C Storage Temperature -55 to 15 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied I G_MAX vs. T CH vs. Stage Total Ig_max Stage1 Stage Channel Temperature ( C) Data Sheet Rev. B July 5, 16 - of

21 Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) TBD ESDA / JEDEC JS-1-12 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (26 C max. reflow temp.) and tin/lead (5 C max. reflow temp.) soldering processes. Solder profiles available upon request. RoHS Compliance This product is compliant with the 11/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 15/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br2) Free PFOS Free Pb SVHC Free Qorvo Green Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: Web: customer.support@qorvo.com For technical questions and application information: Important Notice sjcapplications.engineering@qorvo.com The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 16 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. B July 5, of

22 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Qorvo: