TGA GHz Low Noise Amplifier with AGC. Key Features
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- Harriet Bradford
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1 NF (db) Gain, IRL, ORL (db) 2 2 GHz Low Noise Amplifier with AGC Measured Performance Bias conditions: Vd = V, Id = ma, Vg1 =. V, Vg2 = +1.3 V Typical Gain IRL ORL Key Features Frequency Range: 2 2 GHz Midband NF: 2. db Gain: 17. db >3 db adjustable gain with Vg2 TOI: 29 dbm Typical 22 dbm Nominal Psat, 2 dbm Nominal P1dB ESD Protection circuitry on Vd, Vg1, and Vg2 Bias: Vd = V, Id = ma, Vg1 =. V, Vg2 = +1.3 V, Typical Technology: 3MI. um Power phemt Chip Dimensions: 2.9 x 1.3 x. mm Primary Applications Wideband Gain Block / LNA XKu Point to Point Radio Electronic Warfare Applications Product Description The TriQuint is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 22 GHz and is designed using TriQuint s proven standard. um Power phemt production process. The provides a nominal 2 dbm of output power at 1 db gain compression with a small signal gain of 17. db. Greater than 3 db adjustable gain can be achieved using the Vg2 pin. Typical noise figure is 2. db at 12 GHz. Special circuitry on Vd, Vg1 and Vg2 pins provides ESD protection. The is suitable for a variety of wideband systems such as point to point radios, radar warning receivers and electronic counter measures. The is % DC and RF tested onwafer to ensure performance compliance. The has a protective surface passivation layer providing environmental robustness. LeadFree & RoHS compliant. Evaluation Boards are available upon request. Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com 1
2 Table I Absolute Maximum Ratings 1/ Symbol Parameter Value Notes VdVg Drain to Gate Voltage 9 V Vd Drain Voltage 7 V 2/ Vg1 Gate # 1 Voltage Range 2 to V Vg2 Gate # 2 Voltage Range 2 to +3 V Id Drain Current 144 ma 2/ Ig1 Gate # 1 Current Range 2 to 14 ma Ig2 Gate # 2 Current Range 2 to 14 ma Pin Input Continuous Wave Power 22 dbm 2/ Tchannel Channel Temperature 2 C 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. 3/ ESD protection diodes on Vd, Vg1 and Vg2 will conduct current for voltages approaching turnon voltages. Diode turnon voltage levels will decrease with decreasing temperature. Table II Recommended Operating Conditions Symbol Parameter 1/ Value Vd Drain Voltage V Id Drain Current ma Id_Drive Drain Current under RF Drive 144 ma Vg1 Gate # 1 Voltage. V Vg2 Gate # 2 Voltage 1.3 V 1/ See assembly diagram for bias instructions. TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com 2
3 Table III RF Characterization Table Bias: Vd = V, Id = ma, Vg1 =. V, Vg2 = +1.3 V, typical SYMBOL PARAMETER TEST CONDITIONS MIN NOMINAL MAX UNITS Gain Small Signal Gain f = 2 18 GHz f = 18 2 GHz db IRL Input Return Loss f = 2 4 GHz f = 4 2 GHz db ORL Output Return Loss f = 2 6 GHz f = 6 2 GHz db Psat Saturated Output Power f = 2 18 GHz f = 18 2 GHz 22 2 dbm P1dB Output 1dB Compression f = 2 16 GHz f = 16 2 GHz dbm TOI Output TOI f = 2 12 GHz f = 12 2 GHz 3 26 dbm NF Noise Figure f = 2 4 GHz f = 4 14 GHz f = 14 2 GHz db TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com 3
4 Median Lifetime (Hours) Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Maximum Power Dissipation Tbaseplate = 7 C Pd = 1.1 W Tchannel = 113 C Tm = 9.1 E+7 Hrs Thermal Resistance, θjc Thermal Resistance, θjc Under RF Drive Vd = V Id = ma Pd =. W Vd = V Id = 144 ma Pout = 22 dbm Pd =.62 W θjc = 42.2 C/W Tchannel = 91 C Tm = 2. E+9 Hrs θjc = 42.2 C/W Tchannel = 94 C Tm = 1.3 E+9 Hrs Mounting Temperature 3 Seconds 32 C Storage Temperature 6 to C Median Lifetime vs Channel Temperature 1.E+13 1.E+12 1.E+11 1.E+ 1.E+9 1.E+8 1.E+7 1.E+6 1.E+ FET 1.E Channel Temperature (C) TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com 4
5 IRL and ORL (db) Gain (db) Measured Data Bias conditions: Vd = V, Id = ma, Vg1 =. V, Vg2 = +1.3 V Typical IRL ORL TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com
6 S21 (db) Gain (db) Measured Data Bias conditions: Vd = V, Id = ma, Vg1 =. V, Vg2 = +1.3 V Typical 2 2 2C 7C 4C Gain tuned by adjusting Vg2 Vd = V, Vg1 =. V constant Id = ma, Vg2 = +1.3 V Id = 7 ma, Vg2 =.44 V Id = 43 ma, Vg2 =.6 V Id = 32 ma, Vg2 =.76 V Id = 23 ma, Vd2 =.84 V Id = 16 ma, Vd2 =.9 V Id =.6 ma, Vg2 =.9 V TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com 6
7 Pout (dbm) Pout (dbm), Gain (db) Id (ma) Measured Data Bias conditions: Vd = V, Id = ma, Vg1 =. V, Vg2 = +1.3 V Typical GHz 12 GHz 12 GHz Pin (dbm) Psat P1dB TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com 7
8 OTOI Pin = 14 dbm OTOI 12 GHz Measured Data Bias conditions: Vd = V, Id = ma, Vg1 =. V, Vg2 = +1.3 V Typical Pout/Tone (dbm) VG2 = +2. V VG2 = +2. V VG2 = +1.3 V VG2 =.7 V TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com 8
9 Gain (db) NF (db) Measured Data Bias conditions: Vd = V, Id = ma, Vg1 =. V, Vg2 = +1.3 V Typical Gain NF TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com 9
10 Electrical Schematic Vd pf.1 uf RF In RF Out.1 uf pf pf.1 uf Vg1 Vg2 Bias Procedures Biasup Procedure Vg1 set to 1. V Vd set to + V Vg2 set to +1.3 V Adjust Vg1 more positive until Id is ma. This will be ~ Vg1 =. V Apply RF signal to input Adjust Vg2 to obtain desired gain. Biasdown Procedure Set Vg2 to +1.3 V Turn off RF supply Reduce Vg1 to 1. V. Ensure Id ~ ma Turn Vg2 to V Turn Vd to V Turn Vg1 to V TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com
11 Mechanical Drawing Units: millimeters Thickness:. Die x,y size tolerance: +/. Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad # 1 RF In. x.8 Bond Pad # 4 Vd1.1 x.13 Bond Pad # 2 Vg2. x. Bond Pad # RF Out. x.8 Bond Pad # 3 Vd2 (Not used).13 x.1 Bond Pad # 6 Vg1. x. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com 11
12 Recommended Assembly Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 12 TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484
13 Assembly Notes Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment (i.e. epoxy) can be used in lowpower applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: Use AuSn (8/2) solder and limit exposure to temperatures above 3 C to 34 minutes, maximum. An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use any kind of flux. Coefficient of thermal expansion matching is critical for longterm reliability. Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with.7inch wire. Ordering Information Part ECCN Package Style EAR99 GaAs MMIC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972) Fax (972)99484 Infommw@tqs.com 13
14 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TriQuint:
4 Watt Ka-Band HPA Key Features Measured Performance Primary Applications Ka-Band VSAT Product Description
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Product Data Sheet August 5, 2008
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Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Vdd Description RFOUT The CMD97 is a wideband GaAs MMIC driver amplifier ideally suited
NPA105-D. Preliminary GHz GaN 40W Power Amplifier. Product Description: Key Features:
Product Description: The Nxbeam is a Ku-band high power GaN MMIC fabricated in 0.2um GaN HEMT on SiC. This part is ideally suited for satellite communications, point-to-point radios, and radar applications.
CMD GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wideband performance High gain High linearity HMC98 replacement Small die size RFIN Vdd1 Vdd Vdd3 RFOUT Description The CMD91 is a wideband GaAs MMIC driver amplifier
CMD GHz GaN Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Ultra wideband performance Low noise figure High RF power survivablility Low current consumption Small die size Vdd Vgg2 RFOUT Description RFIN The CMD2 is a wideband
TGA2760-SM GHz Power Amplifier
Applications Point-to-Point Radio -Lead 8.0 x.0 x 2 mm Package Product Features Functional Block Diagram Frequency Range: 9.5 12 GHz Power: +42 dbm Psat Gain: 33 db Integrated Power Detector Bias: V D1
TGA2710-SM 8W GHz Power Amplifier
Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9.5-11.5 GHz Saturated Output Power: 39 dbm Small
3 4 ACG1 ACG2. Vgg2 2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance Positive gain slope High output power Low noise figure Small die size 3 4 ACG ACG Vgg RFOUT & Vdd Description RFIN The CMD9 is wideband GaAs
TGA4548S2. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information GHz 10 W GaN Power Amplifier
17-2 GHz 1 W GaN Power Amplifier Product Overview Qorvo s is a high frequency, high power MMIC amplifier fabricated on Qorvo s production.1um GaN on SiC process (QGaN1). The operates from 17 2 GHz and
TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 3.7 GHz PSAT:.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db Bias:
TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier
TGA78-CP Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal Gain: > db IM3: -
Data Sheet. AMMC GHz 0.2 W Driver Amplifier. Features. Description. Applications
AMMC-6333 18 33 GHz.2 W Driver Amplifier Data Sheet Chip Size: x 13 m (1 x 51 mils) Chip Size Tolerance: ± 1 m (±.4 mils) Chip Thickness: 1 ± 1 m (4 ±.4 mils) Pad Dimensions: 1 x 1 m (4 x 4 ±.4 mils) Description
TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier
Applications Radar Product Features Frequency Range:.1. GHz Pout: 9 dbm at PIN = 7 dbm PAE: 5 % Pulsed Power Gain: db at PIN = 7 dbm Bias: VD = V, IDQ = ma, VG = - V typical, pulsed (PW = 15 ms, DC = %)
GHz GaAs MMIC Power Amplifier
17.0.0 GHz GaAs MMIC August 07 Rev 08Aug07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement.0 Small Signal Gain +.0 m Saturated Output Power 0% OnWafer RF, DC and
0.5-20GHz Driver. GaAs Monolithic Microwave IC
CHA422-98F.-2GHz Driver GaAs Monolithic Microwave IC Description The CHA422-98F is a distributed driver amplifier which operates between. and 2GHz. It is designed for a wide range of applications, such
27-31 GHz 2W Balanced Power Amplifier TGA4513-CP
27-31 GHz 2W Balanced Power Amplifier Key Features 27-31 GHz Bandwidth > 32 dbm Nominal P1dB 33 dbm Nominal Psat 22 db Nominal Gain IMD3 is 32 dbc @ 18 dbm SCL 12 db Nominal Return Loss Bias: 6 V, 84 ma
3 4 ACG1 ACG2. 2 Vgg2 RFIN. Parameter Min Typ Max Units. Frequency Range DC - 24 GHz. Gain 18 db. Noise Figure 2.5 db. Output P1dB 25 dbm
Features Ultra wideband performance Positive gain slope High output power Low noise figure Small die size Description The CMD44 is wideband GaAs MMIC distributed amplifier die which operates from DC to
CMD GHz Distributed Low Noise Amplifier RFIN
- GHz Distributed Low Noise Amplifier Features Wide bandwidth Single positive supply voltage Low noise figure Small die size Description Applications Wideband communication systems Point-to-point radios
Advanced Information: AI GHz Low Noise Amplifier. GaAs Monolithic Microwave IC
: AI1801 GaAs Monolithic Microwave IC UMS has developed a two-stage self-biased wide band monolithic Low Noise Amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package. It operates from
Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma
![Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma](/thumbs/89/98911879.jpg "Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma")
v.1111 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram P1dB Output Power: + dbm Psat Output Power: +
TGA2818-SM S-Band 30 W GaN Power Amplifier
S-Band 3 W GaN Power Amplifier Applications Military Radar Civilian Radar Wideband Amplifiers Product Features Functional Block Diagram Frequency Range: 2.8-3.7 GHz Pout: >.5 dbm (Pin=27 dbm) Large Signal
2-18 GHz Low Noise Amplifier TGA8344-SCC
April 3, 2003 2-18 GHz Low Noise Amplifier Key Features and Performance 2 to 18 GHz Frequency Range Typical 4 db Noise Figure at Midband 16 dbm Typical Output Power at 1 db Gain Compression 19 db Typical
CMD217. Let Performance Drive GHz GaN Power Amplifier
Let Performance Drive Features High Power High linearity Excellent efficiency Small die size Applications Ka-band communications Commercial satellite Military and space Description Functional Block Diagram
RF3932D 60W GaN on SiC Power Amplifier Die
60W GaN on SiC Power Amplifier Die RF3932D Package: Die The RF3932D is a 48V, 60W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure,
CMD GHz Low Noise Amplifier
Features Functional Block Diagram Ultra low noise figure High gain broadband performance Single supply voltage: +3. V @ 5 ma Small die size Vdd Description The CMD7 is a broadband MMIC low noise amplifier
Data Sheet. AMMC GHz Amplifier. Description. Features. Applications
AMMC - 518-2 GHz Amplifier Data Sheet Chip Size: 92 x 92 µm (.2 x.2 mils) Chip Size Tolerance: ± 1µm (±.4 mils) Chip Thickness: 1 ± 1µm (4 ±.4 mils) Pad Dimensions: 8 x 8 µm (.1 x.1 mils or larger) Description
Features. = +25 C, Vdd = +6V, Idd = 375mA [1]
![Features. = +25 C, Vdd = +6V, Idd = 375mA [1]](/thumbs/86/94452749.jpg "Features. = +25 C, Vdd = +6V, Idd = 375mA [1]")
v.119 HMC86 POWER AMPLIFIER, 24 -.5 GHz Typical Applications The HMC86 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Saturated Output
Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]
![Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]](/thumbs/82/85923909.jpg "Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]")
HMC129 v1.412 Typical Applications The HMC129 is ideal for: Features Saturated Output Power: + dbm @ 25% PAE Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional
TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7-3.7 GHz P SAT :.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db
2-22GHz LNA with AGC. GaAs Monolithic Microwave IC
Linear gain, Return Losses (db) WWG A3667A A3688A UMS 67A 88A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) that operates
CMD GHz Low Noise Amplifier. Functional Block Diagram. Features. Description
33- GHz Low Noise Amplifier Features Functional Block Diagram Ultra low noise performance All positive bias Low current consumption Small die size 2 3 Vgg GB RFIN Vdd RFOUT Description The CMD9 is a highly
it to 18 GHz, 2-W Amplifier
it218 to 18 GHz, 2-W Amplifier Description Features Absolute Maximum Ratings Electrical Characteristics (at 2 C) -ohm system V DD = 8 V Quiescent current (I DQ = 1.1 A The it218 is a three-stage, high-power
1-22 GHz Wideband Amplifier
1-22 GHz Wideband Amplifier Features Frequency Range : 1. 22.GHz 12dB Nominal gain Noise Figure: 2.1 @ 8GHz P1 db: 1 dbm at 1GHz. Input Return Loss > 12 db Output Return Loss > 12 db DC decoupled input
2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402
2 GHz to 3 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC842 FEATURES Output power for 1 db compression (P1dB): 21. dbm typical Saturated output power (PSAT): 22 dbm typical Gain: 13. db typical Noise