it to 18 GHz, 2-W Amplifier

Transcription

1 it218 to 18 GHz, 2-W Amplifier Description Features Absolute Maximum Ratings Electrical Characteristics (at 2 C) -ohm system V DD = 8 V Quiescent current (I DQ = 1.1 A The it218 is a three-stage, high-power amplifier that operates from to 18 GHz. It provides saturated mid-band output power of 2. W and greater than 1. W at 18 GHz with average small-signal gain of 21 db across its bandwidth. The it218 has only four DC supply buses, simplifying and reducing the cost of assembly. Input and output ports are on-chip AC coupled. The it218 also provides acceptable out-of-band gain and power with good return loss up to 2 GHz. Frequency range: GHz 18 GHz Gain: 18 db at 18 GHz Psat: 32 dbm at 18 GHz Mid-band Psat: >33 dbm DC bias: 8 V at 1.1 A Full chip passivation for high reliability Chip size:.22 mm x 2.67 mm x.1 mm Symbol Parameters/conditions Min. Max. Units V DD Positive supply voltage V DD1 and V DD2 1 V V GG Negative supply voltage V GG1 and V GG2-3 V I DD Positive supply DC current 18 ma I GG Negative supply current 2 ma Pin RF input power 21 dbm Pdiss_DC DC power dissipation (no RF) 13 W Tch Maximum channel temperature 17 C Tm Mounting temperature ( s) 32 C Parameters/conditions Min. Typ. Max. Units Frequency range 18 GHz Small signal gain at 18 GHz db Input return loss 7 1 db Output return loss 7. db Output power (1 db gain compression) 33 dbm Output power (3dB gain compression). 33. dbm IN V GG1 V GG2 V DD1 V DD2 OUT Thermal Characteristics Symbol Parameters/conditions Rth_jb ( o C/W) Tch ( o C) MTTF (hr.) Rth_jb Thermal resistance junction (back side of die). No RF: DC bias V DD = 8 V, I DQ = 1.1 A, P DC = 8.8 W. T base = 7 o C, No RF applied E+6 For pricing, delivery, and ordering information, please contact GigOptix at (6) , 1

2 it218 to 18 GHz, 2-W Amplifier Small Signal Performance (At 2 o C) Measured on connectorized evaluation fixture S21 (db) Small signal gain S11 (db) Input return loss S22 (db) Output return loss S12 (db) Isolation For pricing, delivery, and ordering information, please contact GigOptix at (6) , 2

3 it218 to 18 GHz, 2-W Amplifier Power Performance 38 P 1dB, V DD =8 V, I DD = 1.1 A 38 Psat, (At 2 o C) Measured on connectorized evaluation fixture P1dB dbm P3dB dbm PAE, Pout vs. Pin, PAE % 3 PAE at P1dB 2 PAE at P3dB Freq. GHz Pout dbm Pout_6GHz 1 Pout_12GHz 1 Pout_18GHz Gain db Gain vs. Pin, v Gain_6GHz Gain_12GHz GAin_18GHz PAE % PAE vs. Pin, PAE_6GHz PAE_12GHz PAE_18GHz For pricing, delivery, and ordering information, please contact GigOptix at (6) , 3

4 it218 to 18 GHz, 2-W Amplifier Chip Layout and Bond Pad Locations (Back of chip is RF and DC ground) Dimensions in µm Chip size tolerance: ±2 µm Chip thickness: 1 µm ± 1 µm Pinout and pad dimensions: P1: VGG1, Negative voltage (1 x 18 µm 2 ) P2: VGG2, Negative voltage (1 x 18 µm 2 ) P3: VDD1, Positive voltage (1 x 18 µm 2 ) P4: VDD2, Positive voltage (1 x 18 µm 2 ) P: RF in (7 x 1 µm 2 ) P6: RF out (7 x 1 µm 2 ) Recommended Assembly Diagram For pricing, delivery, and ordering information, please contact GigOptix at (6) , 4

5 it218 to 18 GHz, 2-W Amplifier Recommended Procedure for Biasing and Operation Application Information CAUTION: LOSS OF GATE VOLTAGE (V GG ) WHILE CORRESPONDING DRAIN VOLTAGE (V DD ) IS PRESENT CAN DAMAGE THE AMPLIFIER. The following procedure must be considered to properly test the amplifier. The it218 amplifier is biased with a positive drain supply (V DD ) and a negative gate supply (V GG ). The recommended bias conditions for the it218 is V DD = 8. V, I DD = 1.1 A. To achieve this drain current level, V GG is typically biased between.3 V and.6 V. The gate voltage (V GG ) MUST be applied prior to the drain voltage (V DD ) during power up and removed after the drain voltage is removed during the power down. One voltage V GG should be used to bias V GG1 and V GG2 together. V DD1 and V DD2 must be biased using one bias supply V DD. Having V DD1 and V DD2 at different voltages may damage the MMIC. CAUTION: THIS IS AN ESD SENSITIVE DEVICE Chip carrier material should be selected to have GaAs-compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 32 C for 1 min. Die attachment for power devices should utilize gold/tin (8/2) eutectic alloy solder and should avoid hydrogen environment. Note that the back side of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. They are sensitive to ESD and should be handled with appropriate caution, including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be grounded to prevent static discharges through the device. Recommended wire bonding uses 3-mil-wide,.-mil-thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 12 mils long, corresponding to a typical 2 mil gap between the chip and the substrate material. For pricing, delivery, and ordering information, please contact GigOptix at (6) ,