TGA3504-SM 2-30 GHz GaAs Wideband Gain Block

Transcription

1 TGA54-SM Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range: 2 GHz Small Signal Gain: 11.5 db mid-band Return Loss: > db NF:.4 db typical P1dB: 8 dbm, PSAT = dbm at PIN = 5 dbm OTOI: 17 dbm at Pout/tone = 5 dbm Bias: V + = 5 V (VD = V), IDQ = 5 ma, VG = -1.5 V Typical, VCTRL = V Package Dimensions: 5 x 5 x 1.5 mm Functional Block Diagram General Description TriQuint s TGA54-SM is a packaged wideband gain block with adjustable gain control giving the user extra flexibility to fine tune system performance. Operating from 2 to GHz, the TGA54-SM provides 8 dbm P1dB and 11 db of small signal gain with return losses of greater than db. The TGA54-SM is fabricated on TriQuint s TQPHT. um GaAs phemt process and is offered in a robust 5x5 mm air-cavity QFN. With integrated DC blocking caps and fully matched to 5ohms, the TGA5-SM is easily integrated in both commercial and military system architectures. Lead-free and RoHS compliant Evaluation Boards are available upon request. Pad Configuration Pad No. 1-4, -1, -21, 2-27, 2, 1-2 Gnd Symbol 5 RFIN 14 VG1 22 RFOUT 28 V + VCTRL Gnd Ordering Information Part ECCN Description TGA54-SM EAR 2 GHz GaAs Wideband Gain Block Preliminary Datasheet: Rev of 11 - Disclaimer: Subject to change without notice

2 TGA54-SM Absolute Maximum Ratings Parameter Value (1) Bias Voltage (V + ) 1 V Drain Voltage (VD) V Gate Voltage Range (VG1) -5 to V Control Voltage Range (VCTRL) -1 to. V (2) Drain Current (ID) 72 ma Gate Current (IG) -1 to 1 ma Control Current (ICTRL) -.5 to 1 ma Power Dissipation, (PDISS) 1. W Input Power, CW, 5 Ω, (PIN) 1 dbm Channel temperature (TCH) 2 C Mounting Temperature ( Seconds) 2 C Storage Temperature -55 to C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2. Assure VD VCTRL 8 V. Compute VD = V + - IDQ*4 Recommended Operating Conditions Parameter Value (1) Supply Voltage (V + ) 5 V Drain Voltage (VD) Drain Current (IDQ) Gate Voltage (VG1) Control Voltage (VCTRL) V 5 ma -1.5 V Typical V Temperature (TBASE) -4 to Notes: 1. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed overall operating conditions Electrical Specifications Test conditions unless otherwise noted: 25 C, V + = 5 V, IDQ = 5 ma, VG1 = -1.5 V Typical, VCTRL = V, CW Parameter Min Typical Max Units Operational Frequency Range 2 GHz Small Signal Gain >1 db Input Return Loss > db Output Return Loss > db Noise Figure.4 db Output Power at 1 db Gain Compression 1 dbm Output TOI at Pout/tone = 5 dbm 17 dbm Preliminary Datasheet: Rev of 11 - Disclaimer: Subject to change without notice

3 Median Lifetime, T M (Hours) TGA54-SM Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) Tbase =, V+ = 5 V 48 ºC/W Channel Temperature (TCH) (No RF drive) VD = V, VCTRL = V, IDQ = 5 ma, 5 C Median Lifetime (TM) PDISS =.21 W 1.2 x 1^ Hrs Thermal Resistance (θjc) (1) Tbase =, V+ = 5 V (CW) VD = V, VCTRL = V, IDQ = 5 ma, 42 ºC/W Channel Temperature (TCH) (Under RF drive) ID_Drive = 58 ma 2 C Median Lifetime (TM) PIN = 5 dbm, POUT = 11 dbm, Freq = 1 GHz, PDISS =.1 W 1.8 x 1^ Hrs Notes: 1. Thermal resistance measured at back of the package. Test Conditions: VD = V; Failure Criteria is 1% reduction in ID_MAX Median Lifetime vs. Channel Temperature 1E+ 1E+14 1E+1 1E+ 1E+11 1E+1 1E+ 1E+8 1E+7 1E+ 1E+5 1E+4 FET5 1E Channel Temperature, T CH ( C) Preliminary Datasheet: Rev of 11 - Disclaimer: Subject to change without notice

4 S11 (db) S22 (db) S21 (db) S21 (db) Noise Figure (db) S21 (db) TGA54-SM Typical Performance: Small Signal Conditions unless otherwise specified: V + = 5 V, I DQ = 5 ma, V G1 = -1.5 V Typical, VCTRL = V, CW Noise Figure vs. Frequency vs. V CTRL 2.2 V V -4 C Gain vs. Frequency vs. Temperature V + = 7 V Gain vs. Frequency vs. Control Voltage Gain vs. Frequency vs. Drain Voltage 2.2 V 2 V 1.5 V 1 V.5 V V 7 V 5 V Input Return Loss vs. Frequency vs. Temp. Output Return Loss vs. Frequency vs. Temp C C Preliminary Datasheet: Rev of 11 - Disclaimer: Subject to change without notice

5 P1dB (dbm) Drain Current (ma) P OUT (dbm) Gain (db) TGA54-SM Typical Performance: Large Signal Conditions unless otherwise specified: V + = 5 V, I DQ = 5 ma, V G1 = -1.5 V Typical, VCTRL = V, CW Output Power vs. Input Power vs. Frequency Gain vs. Input Power vs. Frequency - GHz 1GHz 2 GHz Temp = P IN (dbm) GHz 1GHz 2 GHz Temp = P IN (dbm) P1dB vs. Frequency Temp = Drain Current vs. Input Power vs. Frequency GHz 1GHz 2 GHz P IN (dbm) Preliminary Datasheet: Rev of 11 - Disclaimer: Subject to change without notice

6 IM5 (dbc) IM5 (dbc) IM (dbc) IM (dbc) OTOI (dbm) OTOI (dbm) TGA54-SM Typical Performance: Linearity Conditions unless otherwise specified: V + = 5 V, I DQ = 5 ma, V G1 = -1.5 V Typical, VCTRL = V, CW OTOI vs. Frequency vs. Temperature Pout/tone = 5 dbm, 1 MHz tone spacing OTOI vs. Output Power vs. Frequency Temp = GHz 1GHz 2 GHz -4 C Output Power/Tone (dbm) IM vs. Frequency vs. Temperature -4 C Pout/tone = 5 dbm, 1 MHz tone spacing IM vs. Output Power vs. Frequency GHz 1GHz 2 GHz Temp = Output Power/Tone (dbm) IM5 vs. Frequency vs. Temperature -4 C Pout/tone = 5 dbm, 1 MHz tone spacing IM5 vs. Output Power vs. Frequency GHz -27 1GHz GHz Temp = Output Power/Tone (dbm) Preliminary Datasheet: Rev of 11 - Disclaimer: Subject to change without notice

7 TGA54-SM Application Information V CTRL R 1 C 7 C C 2 R 2 C 8 V + RF OUT RF IN V G1 C R C Bias-up Procedure 1. Set ID limit to 72 ma, IG limit to 1 ma 2. Apply -2 V to VG1 for pinch off. Apply desired value to VCTRL 4. Apply +5 V to V+, resulting in VD = V 5. Adjust VG1 more positive until IDQ = 5 ma (VG ~ -1.5 V Typical). Apply Gain Control signal (VCTRL) 7. Apply RF signal Bias-down Procedure 1. Turn off RF signal 2. Reduce VG1 to -2 V. Ensure IDQ ~ ma. Set V + to V 4. Turn off VCTRL supply 5. Turn off VD supply. Turn off VG1 supply Pin Description Pin No. Symbol Description 1-4, -1, -21, 2-27, 2, 1-2 Gnd Recommend grounding on PCB 5 RFIN Input; matched to 5 Ω; DC blocked 14 VG1 Gate voltage; bias network is required; see recommended Application Information above. 22 RFOUT Output; matched to 5 Ω; DC blocked 28 V+ VCTRL Drain voltage; bias network is required; see recommended Application Information above. Gain control voltage; bias network is required; see recommended Application Information above. Preliminary Datasheet: Rev of 11 - Disclaimer: Subject to change without notice

8 TGA54-SM Evaluation Board V + GND V CTRL GND C7 C8 R1 R2 C1 C2 C C4 C5 C R C V G1 GND Bill of Material Reference Des. Value Description Manuf. Part Number C1, C2, C 1 μf Cap, 42, 5 V, 1%, X7R Various C, C4, C5 Ohms Res, 42, 5% (Required for above EVB design) Various C7, C8, C 2.2 μf Res,, 5 V, 1%, X7R Various R1, R2, R Ohms Res, 42, 5 V, 5% Various Preliminary Datasheet: Rev of 11 - Disclaimer: Subject to change without notice

9 TGA54-SM Mechanical Information Units: inches Tolerances: unless specified x.xx = ±.1 x.xxx = ±.5 Materials: Base: Aluminum Nitride All metalized features are Au plated Part is mold encapsulated Marking: 54: Part number YY: Part Assembly year WW: Part Assembly week MXXX: Batch ID Preliminary Datasheet: Rev of 11 - Disclaimer: Subject to change without notice

10 Recommended Soldering Temperature Profile TGA54-SM Preliminary Datasheet: Rev of 11 - Disclaimer: Subject to change without notice

11 TGA54-SM ESD Sensitivity Ratings Caution! ESD-Sensitive Device Solderability Compatible with the latest version of J-STD-2 Leadfree solder, 2 C. ESD Rating: TBD Value: TBD Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 RoHS Compliance This part is compliant with EU 22/5/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). MSL Rating This product also has the following attributes: Lead Free Level TBD at TBD C convection reflow Halogen Free (Chlorine, Bromine) The part is rated Moisture Sensitivity Level TBD at TBD C Antimony Free per JEDEC standard IPC/JEDEC J-STD-2. TBBP-A (CHBr42) Free PFOS Free SVHC Free ECCN US Department of Commerce: EAR Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: Tel: info-sales@triquint.com Fax: For technical questions and application information: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Datasheet: Rev of 11 - Disclaimer: Subject to change without notice