TGF Watt Discrete Power GaN on SiC HEMT
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- Griffin Jared Russell
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1 Applications Marine radar Satellite communications Point to point communications Military communications Broadband amplifiers High efficiency amplifiers Product Features Functional Block Diagram Frequency Range: DC - 12 GHz 44.5 dbm Nominal PSAT at 3 GHz 71.6% Maximum at 3 GHz 19.6 db Nominal Power at 3 GHz Bias: VD = 32 V, IDQ = 100 ma Technology: TQGaN on SiC Chip Dimensions: 1.01 x 1.68 x 0.10 mm GND General Description The TriQuint TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 is designed using TriQuint s proven TQGaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2954 typically provides 44.5 dbm of saturated output power with power gain of 19.5 db at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency applications. Lead-free and RoHS compliant. Pad Configuration Pad No. Symbol 1-4 VG / RF IN 5-6 VD / RF OUT Backside Source / Ground Ordering Information Part ECCN Description TGF2954 3A001b.3.b 27 Watt GaN HEMT Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
2 Absolute Maximum Ratings Parameter Drain to Gate Voltage (VDG) Value 100 V Drain Voltage (VD) 40 V Gate Voltage Range (VG) -10 to 0 V Drain Current (ID) 3 A Gate Current (IG) to 8.4 ma CW Power Dissipation 10GHz 34.5 W CW Input Power 10GHz 37 dbm Channel Temperature (TCH) 275 C Mounting Temperature ( Sec.) 3 C Storage Temperature 65 to 0 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage Range (VD) 32 V Drain Quiescent Current (IDQ) 100 ma Drain Current Under RF Drive ( ID) (1) 1.7 A Pinch-off Gate Voltage (VG) 3.5 V (Typ.) Channel Temperature (TCH) 2 C (Max.) (1) 10% pulses at 3GHz, Power Tuned Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
3 RF Characterization Model Optimum Power Tune TGF2954 Simulation conditions unless otherwise noted: T = C, Bond wires not included, Pulse: 100uS PW, 10%. See page 17 for reference planes. Parameter Typical Value Units Frequency (F) GHz Drain Voltage (VD) V Bias Current (IDQ) ma Output P3dB (P3dB) P3dB (3dB) P3dB (G3dB) db Parallel Output Resistance (1) (Rp) Ω mm Parallel Output Capacitance (1) (Cp) pf/mm Load Impedance (ZL) 19.0-j j j j j3.60 Ω Source Impedance (ZS) 2.49+j j j j j0.71 Ω Notes: 1. Large signal equivalent output network (normalized). RF Characterization Model Optimum Efficiency Tune Simulation conditions unless otherwise noted: T = C, Bond wires not included, Pulse: 100uS PW, 10%. See page 17 for reference planes. Parameter Typical Value Units Frequency (F) GHz Drain Voltage (VD) V Bias Current (IDQ) ma Output P3dB (P3dB) P3dB (3dB) P3dB (G3dB) db Parallel Output Resistance (1) (Rp) Ω mm Parallel Output Capacitance (1) (Cp) pf/mm Load Impedance (ZL) 29.7+j j j j j4.87 Ω Source Impedance (ZS) 2.49+j j j j j0.71 Ω Notes: 1. Large signal equivalent output network (normalized). Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
4 Thermal and Reliability Information - Pulsed (1) TGF2954 Parameter Test Conditions Value Units Thermal Resistance, θjc 3.94 ºC/W PD =.2 W, Tbaseplate = 85 C Channel Temperature, TCH 184 C Pulse: 100uS, 5% Median Lifetime, TM 6.84E07 Hrs Thermal Resistance, θjc 4.04 C/W PD =.2 W, Tbaseplate = 85 C Channel Temperature, TCH 187 C Pulse: 100uS, 10% Median Lifetime, TM 5.39E07 Hrs Thermal Resistance, θjc 4.26 ºC/W PD =.2 W, Tbaseplate = 85 C Channel Temperature, TCH 192 C Pulse: 100uS, % Median Lifetime, TM 3.18E07 Hrs Thermal Resistance, θjc 4.93 ºC/W PD =.2 W, Tbaseplate = 85 C Channel Temperature, TCH 9 C Pulse: 100uS, 50% Median Lifetime, TM 6.99E06 Hrs Notes: 1. Assumes eutectic attach using 1mil thick 80/ AuSn mounted to a 10 mil CuMo Carrier Plate. Thermal and Reliability Information - CW (1) Parameter Test Conditions Value Units Thermal Resistance, θjc 5.16 ºC/W PD = W, Tbaseplate = 85 C Channel Temperature, TCH 137 C CW Median Lifetime, TM 1.14E10 Hrs Thermal Resistance, θjc 5.49 C/W PD =.12 W, Tbaseplate = 85 C Channel Temperature, TCH 168 C CW Median Lifetime, TM 3.54E08 Hrs Thermal Resistance, θjc 5.85 ºC/W PD =.16 W, Tbaseplate = 85 C Channel Temperature, TCH 3 C CW Median Lifetime, TM 1.19E07 Hrs Thermal Resistance, θjc 6.27 ºC/W PD =.2 W, Tbaseplate = 85 C Channel Temperature, TCH 243 C CW Median Lifetime, TM 4.43E05 Hrs Notes: 1. Assumes eutectic attach using 1mil thick 80/ AuSn mounted to a 10 mil CuMo Carrier Plate. Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
5 Median LifeTime Median Lifetime, T M (Hours) Median Lifetime vs. Channel Temperature 1E+18 1E+17 1E+16 1E+ 1E+14 1E+13 1E+12 1E+11 1E+10 1E+09 1E+08 1E+07 1E+06 1E+05 1E Channel Temperature, T CH ( C) Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
6 Maximum Channel Temperature - Pulsed TGF Maximum Channel Temperature Carrier Plate Base fixed at 85 o C, Pdiss =.2 W Maximum Channel Temperature ( o C) % Duty Cycle 10% Duty Cycle % Duty Cycle 50% Duty Cycle E E E E E-02 Pulse Width (sec) Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
7 Maximum Channel Temperature - CW TGF Peak Temperature vs. Pdiss (W) for Fixed 85 C on CuMo Carrier Plate 280 Carrier Plate held at 85C Recommended Operating Limit Peak Temperature, C CW Power Dissipation, W Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
8 Model Maximum Performance Bond wires not included. See page 17 for reference planes. 35 Maximum vs. Frequency Vd = 12V, Idq = 100mA Vd = 12V, Idq = 0mA Vd = 32V, Idq = 100mA Vd = 32V, Idq = 0mA [db] Frequency [GHz] Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
9 Model Load Pull Contours Vds = 32V, Idq = 100mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. TGF2954 Zs(fo) = iΩ Zs(2fo) = 19Ω Zs(3fo) = 19Ω Zl(2fo) = Ω Zl(3fo) = Ω 1GHz, Load-pull Max Power is 44.5dBm at Z = iΩ Γ = i Max is 33.6dB at Z = iΩ Γ = i Max is 70.4% at Z = iΩ Γ = i Zo = Ω Power Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
10 Model Load Pull Contours Vds = 32V, Idq = 100mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. TGF2954 Zs(fo) = iΩ Zs(2fo) = 4.5Ω Zs(3fo) = 4.5Ω Zl(2fo) = Ω Zl(3fo) = Ω GHz, Load-pull Max Power is 44.5dBm at Z = iΩ Γ = i Max is 24.5dB at Z = iΩ Γ = i Max is 71.6% at Z = iΩ Γ = i Zo = Ω Power Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
11 Model Load Pull Contours Vds = 32V, Idq = 100mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. TGF2954 Zs(fo) = iΩ Zs(2fo) = 4.5Ω Zs(3fo) = 4.5Ω Zl(2fo) = Ω Zl(3fo) = Ω GHz, Load-pull Max Power is 44.5dBm at Z = iΩ Γ = i Max is 16.3dB at Z = iΩ Γ = i Max is 65.5% at Z = iΩ Γ = i Zo = Ω Power 2 Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
12 Model Load Pull Contours Vds = 32V, Idq = 100mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. 10GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = 4.5Ω Zs(3fo) = 4.5Ω Zl(2fo) = Ω Zl(3fo) = Ω Max Power is 44.3dBm at Z = iΩ Γ = i Max is 11.5dB at Z = iΩ Γ = i Max is 55.5% at Z = iΩ Γ = i Power Zo = Ω Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
13 Model Load Pull Contours Vds = 32V, Idq = 100mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. TGF2954 Zs(fo) = iΩ Zs(2fo) = 4.5Ω Zs(3fo) = 4.5Ω Zl(2fo) = Ω Zl(3fo) = Ω 0.4 GHz, Load-pull 0.5 Max Power is 44.2dBm at Z = iΩ Γ = i Max is 9.4dB at Z = iΩ Γ = i Max is 48% at Z = iΩ Γ = i Zo = Ω Power 0.8 Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
14 Model Power Tuned Data Bond wires not included. See page 17 for reference planes. [db] TGF2954 and vs. Output Power 1GHz, Vds =32V, Idq =100mA, 100uS, 10%, Power Tuned Zs = 2.49+j18.3Ω Zl = 19.0-j0.41Ω [%] [db] TGF2954 and vs. Output Power 3GHz, Vds =32V, Idq =100mA, 100uS, 10%, Power Tuned Zs = 1.31+j6.14Ω Zl = 17.2+j5.12Ω [%] [db] TGF2954 and vs. Output Power 6GHz, Vds =32V, Idq =100mA, 100uS, 10%, Power Tuned Zs = 1.05+j2.41Ω Zl = 12.8+j7.52Ω [%] [db] TGF2954 and vs. Output Power 10GHz, Vds =32V, Idq =100mA, 100uS, 10%, Power Tuned Zs = 0.96+j0.60Ω Zl = 7.09+j6.65Ω [%] TGF2954 and vs. Output Power GHz, Vds =32V, Idq =100mA, 100uS, 10%, Power Tuned [db] Zs = 0.92-j0.71Ω Zl = 3.98+j3.60Ω [%] Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
15 Model Efficiency Tuned Data Bond wires not included. See page 17 for reference planes. [db] TGF2954 and vs. Output Power 1GHz, Vds =32V, Idq =100mA, 100uS, 10%, Efficiency Tuned Zs = 2.49+j18.3Ω Zl = 29.7+j8.65Ω [%] [db] TGF2954 and vs. Output Power 3GHz, Vds =32V, Idq =100mA, 100uS, 10%, Efficiency Tuned Zs = 1.31+j6.14Ω Zl = 17.8+j16.5Ω [%] [db] TGF2954 and vs. Output Power 6GHz, Vds =32V, Idq =100mA, 100uS, 10%, Efficiency Tuned Zs = 1.05+j2.41Ω Zl = 8.06+j13.3Ω [%] [db] TGF2954 and vs. Output Power 10GHz, Vds =32V, Idq =100mA, 100uS, 10%, Efficiency Tuned Zs = 0.96+j0.60Ω Zl = 5.22+j8.11Ω [%] [db] TGF2954 and vs. Output Power GHz, Vds =32V, Idq =100mA, 100uS, 10%, Efficiency Tuned Zs = 0.92-j0.71Ω Zl = 2.94+j4.87Ω [%] Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
16 Mechanical Drawing Bond Pads Pad No. Description Dimensions 1, 2, 3, 4 Gate 0.1 x 0.1 5, 6 Drain 0.0 x Die Backside Source / Ground x Units: millimeters 2. Thickness: mm 3. Die xy size tolerance: ± mm Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
17 Reference Planes Reference Planes Model A model is available for download from Modelithics (at by approved TriQuint customers. The model is compatible with the industry s most popular design software including Agilent ADS and National Instruments/AWR applications. Once on the Modelithics web page, the user will need to register for a free license before being granted the download. Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
18 Assembly Notes Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment (i.e. epoxy) not recommended. Reflow process assembly notes: Use AuSn (80/) solder and limit exposure to temperatures above 0 C to 3-4 minutes, maximum. An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use any kind of flux. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram. Force, time, and ultrasonics are critical bonding parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with inch wire. Disclaimer GaN/SiC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Bias-up Procedure 1. VG set to -5 V. 2. VD set to 32 V. 3. Adjust VG more positive until quiescent ID is 100 ma. 4. Apply RF signal. Bias-down Procedure 1. Turn off RF signal. 2. Turn off VD and wait 1 second to allow drain capacitor dissipation. 3. Turn off VG. Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
19 Product Compliance Information ESD Sensitivity Ratings ESD Rating: TBD Value: TBD Test: TBD Standard: TBD Caution! ESD-Sensitive Device Solderability Compatible with gold/tin (3 C maximum reflow temperature) soldering processes. RoHs Compliance This part is compliant with EU 02/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (CH12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: Tel: info-sales@triquint.com Fax: For technical questions and application information: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev A of 19 - Disclaimer: Subject to change without notice
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17-2 GHz 1 W GaN Power Amplifier Product Overview Qorvo s is a high frequency, high power MMIC amplifier fabricated on Qorvo s production.1um GaN on SiC process (QGaN1). The operates from 17 2 GHz and
QPD0020S2. 35 W, 48 V, DC 6 GHz, GaN RF Power Transistor. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a 35 W unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and
TGA FL 20W Ku-Band GaN Power Amplifier
TGA279-2-FL Applications Ku-band Communications Product Features Frequency Range: 14.0 1. GHz P SAT : 43 dbm PAE: 27% Small Signal Gain: db Integrated Voltage Detector Bias: V D = 2 V, I DQ = 1.0 A, V
TGP2107-SM 6 to 18 GHz 6-Bit Digital Phase Shifter ( V C )
TGP217-SM Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital
TGA GHz Low Noise Amplifier with AGC. Key Features
NF (db) Gain, IRL, ORL (db) 2 2 GHz Low Noise Amplifier with AGC Measured Performance Bias conditions: Vd = V, Id = ma, Vg1 =. V, 2 2 2 2 3 3 9 8 7 6 4 3 2 1 Vg2 = +1.3 V Typical 2 4 6 8 12 14 16 18 2
TGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
TGA94-HM Product Description Qorvo s TGA94-HM is a packaged power amplifier fabricated on Qorvo s. um GaN on SiC process (QGaN). Operating from 27 to 31 GHz, the TGA94- HM achieves 36.5 dbm saturated output
TGA2704-SM 8W 9-11 GHz Power Amplifier
Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9 - Saturated Output Power: 39 dbm Small Signal
TGA2214-CP 2 18 GHz 4 W GaN Power Amplifier
Product Description Qorvo s TGA2214-CP is a packaged wideband power amplifier fabricated on Qorvo s QGaN15 0.15 µm GaN on SiC process. Operating from 2 to 18 GHz, the TGA2214- CP generates > 4 W saturated
DC - 20 GHz Discrete power phemt
DC - 20 GHz Discrete power phemt Product Description The TriQuint is a discrete 0.6 mm phemt which operates from DC-20 GHz. The is designed using TriQuint s proven standard 0.3um power phemt production
QPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
.15 2.8 GHz 5 W GaN SPDT Switch Product Overview Qorvo s is a Single-Pole, Double Throw (SPDT) switch fabricated on Qorvo s QGaN25.25um GaN on SiC production process. Operating from.15 to 2.8 GHz, the
TGA FL 2.5 to 6 GHz 40W GaN Power Amplifier
Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Functional Block Diagram Frequency Range: 2.5 to 6 GHz PSAT: 46.5 dbm @ PIN = 26dBm, CW PAE: 36% Small
Applications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier
Applications Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 10 12 GHz TOI: 43 dbm Power: 34.5 dbm Psat, 33 dbm P1dB Gain: 24 db Return
TGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
TGA4533-SM K-Band Power Amplifier
Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm L Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: dbm Psat, 31 dbm P1dB Gain: 22 db TOI: 41 dbm at 21 dbm SCL
Product Data Sheet August 5, 2008
TriQuint Recommends the TGA4516 be used for New Designs 33-36 GHz 2W Power Amplifier Key Features 0.25 um phemt Technology 17 db Nominal Gain 31 dbm Pout @ P1dB, Psat 33dBm @ 6V, 34dBm @7V Bias 6-7V @
TGP GHz 180 Phase Shifter. Primary Applications. Product Description. Measured Performance
Amplitude Error (db) S21 (db) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 Measured Performance 0.0 140 30 31 32 33 34 35 36 37 38 39 40 0-1 -2-3 -4-5 State 0-6 State 1-7 -8-9 -10 30 31 32 33 34 35 36 37 38
TGA FL 2.5 to 6GHz 40W GaN Power Amplifier
2.5 to 6GHz 4W GaN Power Amplifier Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Frequency Range: 2.5 to 6 GHz P SAT : 46.5 dbm @ PIN = 26dBm, CW PAE:
QPD1025L. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info
Product Overview The Qorvo is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input prematch within the package results in ease of external board match and saves board space.
TGL2226-SM GHz 6-Bit Attenuator
Applications Commercial and Military Radar Electronic Warfare Satellite Communications Point to Point Radio General Purpose Product Features Functional Block Diagram Frequency Range:.1-15 GHz 6-Bit Digital
TGF2977-SM DC 12 GHz, 32 V, 5 W GaN RF Transistor
Product Overview The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to GHz and 32 V supply. The device is in an industry standard overmolded package and is ideally suited
QPM GHz Limiter/Low-Noise Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
QPM1 Product Description The Qorvo QPM1 is an integrated limiter/lna providing robust, high performance over the 2 2GHz frequency range. The QPM1 delivers 17 db small signal gain with gain control and
QPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
0.15 2.8 GHz High Power GaN SP3T Switch Product Overview Qorvo s is a Single-Pole, Triple Throw (SP3T) switch fabricated on Qorvo s QGaN25 5um GaN on SiC production process. Operating from 0.15 to 2.8
QPD1025. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info
QPD1025 Product Overview The Qorvo QPD1025 is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input pre-match within the package results in ease of external board match and
QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
TGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM
TGA Watt Ka-Band HPA. Key Features. Measured Performance Bias conditions: Vd = 6 V, Idq = 3200 ma, Vg = -0.7 V Typical
7 Watt Ka-Band HPA Key Features Frequency Range: 29-31 GHz 38.5 dbm Nominal Psat, 38 dbm Nominal P1dB Gain: 21 db Return Losses: -10 db Bias: Vd = 6 V, Idq = 3.2 A, Vg = -0.7 V Typical, Id under RF drive
QPA1003P 1 8 GHz 10 W GaN Power Amplifier
QPA13P 1 8 GHz 1 W GaN Power Amplifier Product Description Qorvo s QPA13P is a wideband high power MMIC amplifier fabricated on Qorvo s production.um GaN on SiC process (QGaN). The QPA13P operates from
TGA2612-SM 6 12 GHz GaN LNA
Product Description Qorvo s is a packaged broadband Low Noise Amplifier fabricated on Qorvo s QGaN 0.um GaN on SiC process. Covering 6, the TGA2612- SM typically provides >23 dm small signal gain, 19 dbm
QPA GHz GaAs Low Noise Amplifier
General Description Qorvo s QPA9 is a packaged, high-performance, low noise amplifier fabricated on Qorvo s production 9 nm phemt (QPHT9) process. Covering 7 GHz, the QPA9 provides db small signal gain
TGA GHz 2.5 Watt, 25dB Power Amplifier. Key Features and Performance. Preliminary Measured Performance Bias Conditions: Vd=7V Id=640mA
13-17 GHz 2.5 Watt, 25dB Power Amplifier Preliminary Measured Performance Bias Conditions: Vd=7V Id=640mA Key Features and Performance 34 dbm Midband Pout 25 db Nominal Gain 7 db Typical Input Return Loss
TGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM
QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information. Part No.
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
12-18 GHz Ku-Band 3-Stage Driver Amplifier TGA2507
12- GHz Ku-Band 3-Stage Driver Amplifier Key Features 12- GHz Bandwidth 28 db Nominal Gain dbm P1dB Bias: 5,6,7 V, 80 ± 10% ma Self Bias 0.5 um 3MI mmw phemt Technology Chip Dimensions: 1.80 x 0.83 x 0.1
QPD W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz. can deliver PAVG of 36 W at +48 V operation.
QPD0210TR7. 2x15 W, 48 V, GHz, Dual GaN RF Transistor. Product Overview. Applications. Functional Block Diagram. Ordering Information
Product Overview The is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 1.8 to 2.7 GHz. In each path is a single-stage amplifier transistor. can deliver PSAT of 16.6 W at +48
TGM2543-SM 4-20 GHz Limiter/LNA
TGM243-SM Applications Receiver front end building block Product Features QFN 7x7mm 22L Frequency Range: 4-2 GHz Input Power CW Survivability: 4 W Functional Block Diagram Gain: 17 db Noise Figure: 2 db
Ka-Band 2W Power Amplifier
Ka-Band 2W Power Amplifier Key Features 30-40 GHz Bandwidth > 33 dbm Nominal Psat @ Pin = 20dBm 18 db Nominal Gain Bias: 6 V, 50 ma Idq (1.9A under RF Drive) 0.15 um 3MI MMW phemt Technology Thermal Spreader
QPD W, 50V, DC 4 GHz, GaN RF Transistor
General Description The Qorvo is a W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo s proven QGaN25HV process, which features advanced field plate
6-13 GHz Low Noise Amplifier TGA8399B-SCC
6-13 GHz Low Noise Amplifier Key Features and Performance 6-13 GHz Frequency Range 1.5 db Typical Noise Figure Midband 26 db Nominal Gain High Input Power Handling: ~ 20dBm Balanced Input for Low VSWR
TGA3500-SM 2-12 GHz Driver Amplifier
Applications General Purpose QFN 8x8mm 28L Product Features Frequency Range: 2 12 GHz Power: 23 dbm P SAT Gain: 34 db Output TOI: 29 dbm Noise Figure: 3 db Bias: V D = 5 V, I D = 0 ma, V G1 = -0.7 V, V
QPD MHz, 50 V, 7 W GaN RF Input-Matched Transistor
Product Overview The Qorvo QPD11 is a W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance,
T1G Q3 DC 6 GHz 18 W GaN RF Power Transistor
Applications General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features Frequency: DC to 6 GHz
TGL2767-SM-EVB. 2 31GHz Voltage Variable Attenuator. Product Description. Product Features. Applications Block Diagram. Ordering Information
Product Description The TGL2767 SM is a packaged wideband voltagevariable attenuator using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from 2 31 GHz, the TGL2767 SM offers > 2 db of
TGA4811. DC - 60 GHz Low Noise Amplifier
TGA11 DC - GHz Low Noise Amplifier Key Features GHz Bandwidth 3. db noise figure > 15 db small signal gain 13 dbm P1dB +/- 7 ps group delay variation Bias:.5V, 5 ma.15 um 3MI mhemt Technology Chip Dimensions:
TGA2760-SM GHz Power Amplifier
Applications Point-to-Point Radio -Lead 8.0 x.0 x 2 mm Package Product Features Functional Block Diagram Frequency Range: 9.5 12 GHz Power: +42 dbm Psat Gain: 33 db Integrated Power Detector Bias: V D1
TGA2521-SM GHz Linear Driver Amplifier Key Features Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
TGS SM GHz High Power SPDT Reflective Switch
- 18 GHz High Power SPDT Reflective Switch Product Overview Qorvo s is a single-pole, double-throw (SPDT) reflective switch packaged in a 4x4mm ceramic, air-cavity QFN. Fabricated on Qorvo s QGaN25 0.25um
QPA1019S GHz 10W GaN Power Amplifier
QPA119 4.5 7. GHz 1 W GaN Power Amplifier Product Overview Qorvo s QPA119 is a packaged high-power, C-band amplifier fabricated on Qorvo s production.15 um GaN on SiC process (QGaN15). Covering 4.5 7.
QPD1015L 65W, 50V, DC 3.7 GHz, GaN RF Transistor
QPD15L General Description The QPD15L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz with a V supply rail. The device is in an industry standard air cavity
TGA4906-SM 4 Watt Ka-Band Power Amplifier
TGA496-SM Applications Ka-Band Sat-Com VSAT 496 12 M34 QFN x mm 32L Product Features Functional Block Diagram Frequency Range: 28 31 GHz Power: 36 dbm Psat Gain: db Bias: Vd = 6 V, Idq = 1.6 A, Vg = -.7
TGA4830. Wideband Low Noise Amplifier. Key Features and Performance. Measured Performance V + = 5V, I + = 50mA. Primary Applications
Wideband Low Noise Amplifier Measured Performance V + = 5V, I + = 50mA Key Features and Performance DC - 45GHz Frequency Range 13dB Gain @ 20GHz 15dB Return Loss @ 20GHz 11.5dBm Typical P1dB 3.2dB Typical
TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical