QPD1025. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info

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1 QPD1025 Product Overview The Qorvo QPD1025 is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input pre-match within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations. Lead-free and ROHS compliant Evaluation boards are available upon request. 4-lead NI-1230 Package (Earless) Key Features Functional Block Diagram Frequency: 1.0 to 1.1 GHz Output Power (P3dB) 1 : 1660 W Linear Gain 1 : 22.9 db Typical PAE3dB 1 : 78.5% Operating Voltage: 65 V CW and Pulse capable Note 1.0 GHz Load Pull Applications IFF Transponders Avionics Ordering info Part No. ECCN Description QPD1025 EAR GHz Transistor QPD1025S2 EAR99 2 Piece Sample Bag QPD1025EVB1 EAR GHz Evaluation Board Datasheet Rev. B Subject to change without notice - 1 of

2 QPD1025 Absolute Maximum Ratings 1, 2, 3 Parameter Rating Units Breakdown Voltage,BVDG 225 V Gate Voltage Range, VG -7 to +2 V Drain Current, IDMAX 142 A Gate Current Range, IG See pg. 12 ma Power Dissipation, Pulsed, PDISS W RF Input Power, Pulsed, PIN dbm Channel Temperature, TCH 275 C Mounting Temperature (30 Seconds) 320 C Storage Temperature 65 to +150 C 1. Operation of this device outside the parameter ranges given above may cause permanent damage 2. Pulsed, 1000us PW, 20% DC, Package base at 85 C 3. Pulsed, 100us PW, 10% DC, T = 25 C Recommended Operating Conditions 1, 2, 3, 4 Parameter Min Typ Max Units Operating Temp. Range C Drain Voltage Range, VD V Drain Bias Current, IDQ 1.5 A Drain Current, ID 4 28 A Gate Voltage, VG V Channel Temperature (TCH) 250 C Power Dissipation (PD) 2,4 685 W Power Dissipation (PD), CW W 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions 2. Package base at 85 C 3. To be adjusted to desired IDQ 4. Pulsed, 1000us PW, 20% DC Measured Load Pull Performance Power Tuned 1, 2 Parameter Typical Values Units Frequency, F GHz Output Power at 3dB compression, P3dB dbm Power Added Efficiency at 3dB compression, % PAE3dB Gain at 3dB compression, G3dB db 1. Test conditions unless otherwise noted: TA = 25 C, VD = 65 V, IDQ = 750 ma (half device) 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. Measured Load Pull Performance Efficiency Tuned 1, 2 Parameter Typical Values Units Frequency, F GHz Output Power at 3dB compression, P3dB dbm Power Added Efficiency at 3dB compression, % PAE3dB Gain at 3dB compression, G3dB db 1. Test conditions unless otherwise noted: TA = 25 C, VD = 65 V, IDQ = 750 ma (half device) 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. Datasheet Rev. B Subject to change without notice - 2 of

3 QPD1025 RF Characterization GHz EVB Performance at 1.05 GHz 1 Parameter Min Typ Max Units Linear Gain, GLIN 21.2 db Output Power at 3dB compression point, P3dB 1461 W Drain Efficiency at 3dB compression point, DEFF3dB 73.2 % Gain at 3dB compression point, G3dB 18.2 db 1. VD = 65 V, IDQ = 1.5 A (combined), Temp = +25 C, Pulse Width = 100 us, Duty Cycle = 10% RF Characterization Mismatch Ruggedness at 1.0 GHz 1, 2, 3 Symbol Parameter db Compression Typical VSWR Impedance Mismatch Ruggedness 3 10:1 1. Test conditions unless otherwise noted: TA = 25 C, VD = 65 V, IDQ = 1.5 A (combined) 2. Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector 3. Pulse: 100us, 10% Duty cycle Datasheet Rev. B Subject to change without notice - 3 of

4 Measured Load-Pull Smith Charts QPD1025 1, 2, 3 1. Test Conditions: VD = 65 V, IDQ = 750 ma, 100 us Pulse Width, 10% Duty Cycle, Temp = 25 C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 13 for load pull reference planes where the performance was measured GHz, Load-pull Zs(fo) = i Zs(2fo) = i Zs(3fo) = i Zl(2fo) = i Zl(3fo) = NaN 19.9 Max Power is 59.2dBm at Z = i = i Max Gain is 20.3dB at Z = i = i Max PAE is 78.5% at Z = i = i Zo = 3 3dB Compression Referenced to Peak Gain 58.9 Power Gain PAE Datasheet Rev. B Subject to change without notice - 4 of

5 Measured Load-Pull Smith Charts QPD1025 1, 2, 3 1. Test Conditions: VD = 65 V, IDQ = 750 ma, 100 us Pulse Width, 10% Duty Cycle, Temp = 25 C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 13 for load pull reference planes where the performance was measured. 1.1GHz, Load-pull Zs(fo) = i Zs(2fo) = i Zs(3fo) = i Zl(2fo) = i Zl(3fo) = NaN Max Power is 59dBm at Z = i = i Max Gain is 20.4dB at Z = i = i Max PAE is 76.9% at Z = i = i Zo = 3 3dB Compression Referenced to Peak Gain Power Gain PAE Datasheet Rev. B Subject to change without notice - 5 of

6 Gain [db] PAE [%] Gain [db] PAE [%] Gain [db] PAE [%] Gain [db] PAE [%] Typical Measured Performance Load-Pull Drive-up QPD1025 1, 2, 3 1. Test Conditions: VD = 65 V, IDQ = 750 ma, 100 us Pulse Width, 10% Duty Cycle, Temp = 25 C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 13 for load pull reference planes where the performance was measured Gain and PAE vs. Output Power 1.0 GHz - Power Tuned Zs-fo = i Zs-2fo = i Zs-3fo = i Zl-fo = i Zl-2fo = i Zl-3fo = NaN Gain PAE Output Power [dbm] Gain and PAE vs. Output Power 1.0 GHz - Efficiency Tuned Zs-fo = i Zs-2fo = i Zs-3fo = i Zl-fo = i Zl-2fo = i Zl-3fo = NaN Gain PAE Output Power [dbm] Gain and PAE vs. Output Power 1.1 GHz - Power Tuned Zs-fo = i Zs-2fo = i Zs-3fo = i Zl-fo = i Zl-2fo = i Zl-3fo = NaN Gain PAE Output Power [dbm] Gain and PAE vs. Output Power 1.1 GHz - Efficiency Tuned Zs-fo = i Zs-2fo = i Zs-3fo = i Zl-fo = i Zl-2fo = i Zl-3fo = NaN Gain PAE Output Power [dbm] Datasheet Rev. B Subject to change without notice - 6 of

7 QPD1025 Power Driveup Performance over Temperatures of GHz EVB 1 1. Test Conditions: VD = 65 V, IDQ = 1.5 A, 100 us Pulse Width, 10% Duty Cycle. Datasheet Rev. B Subject to change without notice - 7 of

8 QPD1025 Power Driveup Performance at 25 C of GHz EVB 1 1. Test Conditions: VD = 65 V, IDQ = 1.5 A, 100 us Pulse Width, 10% Duty Cycle. Datasheet Rev. B Subject to change without notice - 8 of

9 1, 2, 3 Thermal and Reliability Information CW QPD1025 Parameter Conditions Values Units Thermal Resistance, FEA (θjc) (1) (3) 0.26 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) C Pdiss = W Median Lifetime, FEA (TM) (1) 4.0E10 CW Hrs Peak Channel Temperature, IR (2) 117 (2) C Thermal Resistance, FEA (θjc) (1) (3) 0.29 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) C Pdiss = W Median Lifetime, FEA (TM) (1) 1.0E8 CW Hrs Peak Channel Temperature, IR (2) 154 (2) C Thermal Resistance, FEA (θjc) (1) (3) 0.33 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) C Pdiss = W Median Lifetime, FEA (TM) (1) 4.0E5 CW Hrs Peak Channel Temperature, IR (2) 195 (2) C 1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise noted, all thermal references are FEA. 2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability. 3. Thermal resistance measured to backside of package. Datasheet Rev. B Subject to change without notice - 9 of

10 1, 2, 3 Thermal and Reliability Information Pulsed QPD1025 Parameter Conditions Values Units Thermal Resistance, FEA (θjc) (1) (3) 0.12 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) 151 C Pdiss = 518 W Median Lifetime, FEA (TM) (1) 5.0E10 Pulse: 100 us PW, 10% DC Hrs Peak Channel Temperature, IR (2) 130 (2) C Thermal Resistance, FEA (θjc) (1) (3) 0.13 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) 177 C Pdiss = 691 W Median Lifetime, FEA (TM) (1) 3.0E9 Pulse: 100 us PW, 10% DC Hrs Peak Channel Temperature, IR (2) 147 (2) C Thermal Resistance, FEA (θjc) (1) (3) 0.14 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) 209 C Pdiss = 864 W Median Lifetime, FEA (TM) (1) 1.7E8 Pulse: 100 us PW, 10% DC Hrs Peak Channel Temperature, IR (2) 166 (2) C Thermal Resistance, FEA (θjc) (1) (3) 0.15 C/W 85 C Case Peak Channel Temperature, FEA (TCH) (1) 239 C Pdiss = 1037 W Median Lifetime, FEA (TM) (1) 1.8E7 Pulse: 100 us PW, 10% DC Hrs Peak Channel Temperature, IR (2) 183 (2) C 1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise noted, all thermal references are FEA. 2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability. 3. Thermal resistance measured to backside of package. Datasheet Rev. B Subject to change without notice - 10 of

11 Median Lifetime, T M (Hours) QPD1025 Median Lifetime 1, E E E E E E E E E E E E E E E+05 Median Lifetime vs. Channel Temperature Channel Temperature, T CH ( C) 1. Test Conditions: VD = +50 V; Failure Criteria = 10 % reduction in ID_MAX during DC Life Testing. 2. For pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle. Datasheet Rev. B Subject to change without notice - 11 of

12 QPD1025 Maximum Gate Current Datasheet Rev. B Subject to change without notice - 12 of

13 QPD1025 Pin Configuration and Description 1 Note: 1- The QPD1025 will be marked with the QPD1025 designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number, and the ZZZ is an auto-generated serial number. Pin Symbol Description 1, 2 RF IN / VG Gate 3, 4 RF OUT / VD Drain 5 Source Source / Ground / Backside of part Datasheet Rev. B Subject to change without notice - 13 of

14 QPD1025 Mechanical Drawing 1 Note: 1- All dimensions are in inches. Dimension tolerance is ± in, unless noted otherwise. Datasheet Rev. B Subject to change without notice - 14 of

15 GHz Application Circuit - Schematic QPD1025 Bias-up Procedure Bias-down Procedure 1. Set V G to -5 V. 1. Turn off RF signal. 2. Set I D current limit to 4 A. 2. Turn off V D 3. Apply 65 V V D. 3. Wait 2 seconds to allow drain capacitor to discharge. 4. Slowly adjust V G until I D is set to 1.5 A. 4. Turn off V G 5. Apply RF. Datasheet Rev. B Subject to change without notice - 15 of

16 GHz Application Circuit Layout 1, 2 1. PCB material is RO4350B thick, 2 oz. copper each side. 2. The two gates could be tied together or (optionally) adjusted independently. QPD GHz Application Circuit Bill of Material Reference Design Value Qty Manufacturer Part Number C15,C16,C17,C pf 4 American Technical Ceramics 600F8R2BT250T C1 10 pf 1 American Technical Ceramics 600S100FT250XT C2,C3,C4 6.8 PF 3 American Technical Ceramics 600S6R8BT250T C9,C uf 2 Murata Electronics GRM31CR71H475KA12L C19,C20,C21,C pf 4 American Technical Ceramics 600F7R5BT250XT C26,C27 10 uf 2 TDK Singapore (Pte) Ltd C5750X7S2A106M230KB C5,C6,C7,C8 9.1 pf 4 American Technical Ceramics 600S9R1BT250XT C28,C uf 2 Vishay Americas Inc MAL E3 C11,C12,C13,C pf 4 American Technical Ceramics 600F6R8BT250XT C23,C pf 2 American Technical Ceramics 800B3R0BT500XT R1 100 Ohm 1 Panasonic Industrial Devices ERJ-3EKF1000 R2,R3 10 Ohm 2 Vishay Dale Sales Electronics CRCW060310R0FKEA L1,L2 110 nh 2 Coilcraft, Inc. 0805CS-111XJBC Connectors N-Type 2 Huber+Suhner, Inc Datasheet Rev. B Subject to change without notice - 16 of

17 Recommended Solder Temperature Profile QPD1025 Datasheet Rev. B Subject to change without notice - 17 of

18 QPD1025 Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 1C JEDEC JS-001 ESD Charged Device Model (CDM) Class C3 JEDEC JS-002 MSL Moisture Sensitivity Level Solderability MSL3 JESD J-STD-020 (260 C Convection reflow) Caution! ESD-Sensitive Device Compatible with both lead-free (260 C max. reflow temp.) and tin/lead (245 C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: NiAu RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Pb Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: Tel: info-sales@qorvo.com Fax: For technical questions and application information: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2017 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Datasheet Rev. B Subject to change without notice - 18 of

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